JPH0242770B2 - - Google Patents
Info
- Publication number
- JPH0242770B2 JPH0242770B2 JP61081622A JP8162286A JPH0242770B2 JP H0242770 B2 JPH0242770 B2 JP H0242770B2 JP 61081622 A JP61081622 A JP 61081622A JP 8162286 A JP8162286 A JP 8162286A JP H0242770 B2 JPH0242770 B2 JP H0242770B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity
- compound
- dimensional
- cation
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/62—Whiskers or needles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Conductive Materials (AREA)
- Primary Cells (AREA)
- Compounds Of Iron (AREA)
- Manufacturing & Machinery (AREA)
Description
産業上の利用分野
本発明は新規な陽イオン伝導体に関するもので
ある。
陽イオン伝導体は固体電解として電気自動車
用、夜間余剰電力用等に使用できる固体電池やイ
オンセンサーの材料として重要なものである。
従来技術
従来、最も有望視されてきた陽イオン伝導体に
はβ−アルミナがあるが、このβ−アルミナは陽
イオン移動が面内を移動する二次元的なものであ
り、その伝導率が低いためさらに伝導率の高い材
料を開発する要求があつた。
発明の目的
本発明は従来のβ−アルミナからなる陽イオン
伝導体の欠点を解消すべくなされたもので、その
目的は陽イオンの移導が二次元的でなく、一次元
的に伝達し、その陽イオンの移動方位を揃えら
れ、これにより伝導率の高い陽イオン伝導体を提
供するにある。
発明の構成
本発明者らはさきに一般式MxTi16-xGa16+xO56
(ただし、MはK、Rb、またはCs、x=0.1〜2.0
を表わす)で示される新規化合物を提供した。こ
の新規化合物の陽イオン伝導性について更に研究
を重ねた結果、陽イオンを一次元的に伝導し、そ
の陽イオン伝導率が極めて優れていることを究明
し得た。この知見に基いて本発明を完成した。
本発明の陽イオン伝導体は、一般式MxTi16-x
Ga16+xO56(ただし、MはK、Rb、KもしくはRb
のLiまたはNaとの固溶体あるいはCs、x=0.1〜
2.0を表わす)で示される正方晶系の一次元トン
ネル構造を有する化合物からなるものである。
本発明の陽イオン伝導体のトンネル構造は、約
6.5Åの大口径を有し、イオン伝導路の構造的障
壁となるボトルネツクが無く、さらにイオン伝導
路の間隔が適当で相互作用を及ぼすことがないな
ど、イオン伝導機構に関して極めて有効な構造的
特徴を有している。
K、Rb、KもしくはRbのLiまたはNaとの固
溶体、Csは伝導イオンとして作用し、これらは
いずれも優れたイオン伝導性を有し、特にK、
Rb、またはK、RbのLiまたはNaとの固溶体が
優れている。また、該化合物においてTiの一部
を(0〜50%)をMn4+、Gaの一部(0〜50%)
をAl3+、Fe3+またはCr3+で置換させてもさしつ
かえない。
前記一般式におけるxの値は0.1〜2.0の範囲内
であることが必要であるが、好ましい値は0.6〜
1.2である。前記xの値が0.1以下では正方晶系の
一次元トンネル構造を有する化合物になし得ず、
2を超えると伝導性が低下する。
本発明の化合物からなる陽イオン伝導体の形状
は、結晶質であれば、粒状、粉末状、繊維状、砲
弾状、塊状であつてもよい。しかし、伝導機構の
特異性からトンネル構造軸に対して垂直な面、換
言すれば結晶C軸に垂直な面が発達した結晶であ
ることが最も好ましい。
また、一個の単結晶で利用できれば最も好まし
いが、合成法によつては、結晶C軸に平行した針
状結晶繊維状結晶が得られるので、このような場
合には、方位を揃えて束ねることにより、結晶C
軸に垂直な大きな面を作ればよい。
本発明の陽イオン伝導体の結晶の製造法は、焼
成法、溶融性、水熱法、フラツクス法のいずれの
方法でもよいが、モリブデン酸塩やタングステン
酸塩をフラツクスとして用いるフラツクス法であ
ることが好ましい。それは溶融液の塩基性度の制
御が容易なため製造が簡単で、且つ比較的大型単
結晶が製造し易く、また製造に際し高圧力を必要
としないため危険がなく、比較的低温で製造でき
フラツクス蒸発による公害の心配がないこと、ま
た、種々の固溶体の作成も容易で、NaやLiイオ
ン等のイオン半径が小さく、伝導性に富むイオン
種をKやRbイオンと同溶させて、特性の異なる
イオン伝導体も容易に製造し得られるからであ
る。
発明の効果
本発明の陽イオン伝導体はK、Rb、Csなどの
アルカリ金属を伝導イオン種とするため、これを
固体電池とした場合、従来の燃料電池のような活
性でかつ危険なガスを用いる必要がなく、また、
特異な大口径トンネルを有するため、イオンの伝
導方位を一次元的に揃えることによりその伝導率
を高い周波数において、室温におけるβ−アルミ
ナの値よりも100〜1000倍にも高め得られる優れ
た効果を奏し得られる。
実施例 1
(1) 単結晶の製造
99.9%の純度を持つ酸化カリウム、酸化チタ
ン、酸化ガリウムの粉末をモル割合で、(K2O)
0.7(TiO2)1.0(Ga2O3)0.5になるように混合し
た。この混合物と、フラツクス原料として酸化
カリウムと酸化モリブデン粉末を、(K2O)1.0
(MoO3)1.5のモル割合で混合した混合物とを、
20:80のモル%の割合で混合した。
得られた混合物130gを白金るつぼに充填し、
炭化硅素発熱前電気炉で1300℃で約10時間加熱
し溶融した。その後1000℃付近まで4℃/hの
速度で徐冷した後、電気炉より取り出し、室温
まで放冷し、沸騰水でフラツクスを溶解し、結
晶を分離した。
得られた結晶はC軸方向で伸長した淡灰色を
呈する針状であつた。この針状結晶の平均大き
さは、直径0.1mm、長さ5mmであつた。化学分
析の結果は、K1.0Ti15.0Ga17.0O56であつた。
なお、K2CO3に代えてRb3CO3を使用すれば
Rb1.0Ti15.0Ga17.0O56、Cs2CO3を使用すれば
Cs1.0Ti15.0Ga17.0C56の同様な針状結晶が得られ
る。
(2) イオン伝導率の測定
本発明化合物の一次元イオン伝導体の伝導機
構は、従来のβ−アルミナの伝動機構と異なる
理論で説明される。即ち、一次元トンネル内に
存在するKイオンがランダムな電位障害で囲ま
れた領域内を移動することによつて説明され
る。
それによると、伝導率を複素伝導率σで表わ
した場合、次式で表わされ、その測定値解析の
ための電気的等価回路は第1図のように示され
る。
σ=iωεfwε0+iωεpε0・C(iω)〓/iωεpε0
+C(iω)〓
第1図において、
εp=トンネル内のイオンの分極
ε0=真空の誘導率
εfw=トンネル構造枠組に関係した比誘電率
ω=角周波数
i=虚数
C=一次元伝導の伝導度関数の定数
(iω)〓=一次元伝導の伝導関数の周波数依存項
を示す。
電極として金の蒸着膜を利用し、Kイオンを
ブロツクする条件のもとで交流測定で伝導率を
求めることができる。
前記(1)で得た結晶、即ち、結晶C軸方向に成
長した長さ5mm、直径0.1mmの試料について、
広帯域インピーダンス測定装置及びマイクロ波
定在波法を用いて102Hz〜325GHzまでの交流複
素伝導率の実数部と虚数部とを算出した。その
測定結果は次の通りであつた。
INDUSTRIAL APPLICATION FIELD The present invention relates to a novel cation conductor. Cation conductors are important as solid electrolyte materials for solid batteries and ion sensors that can be used for electric vehicles, surplus electricity at night, etc. Conventional technology Until now, the most promising cation conductor is β-alumina, but this β-alumina is a two-dimensional material in which cations move in a plane, and its conductivity is low. Therefore, there was a demand to develop materials with even higher conductivity. Purpose of the Invention The present invention was made to eliminate the drawbacks of conventional cation conductors made of β-alumina, and its purpose is to transport cations not two-dimensionally but one-dimensionally. The purpose is to provide a cation conductor with high conductivity by aligning the movement directions of the cations. Structure of the Invention The present inventors first prepared the general formula M x Ti 16-x Ga 16+x O 56
(However, M is K, Rb, or Cs, x = 0.1 to 2.0
We have provided a novel compound represented by As a result of further research into the cation conductivity of this new compound, we were able to find that it conducts cations in a one-dimensional manner and has extremely high cation conductivity. The present invention was completed based on this knowledge. The cation conductor of the present invention has the general formula M x Ti 16-x
Ga 16+x O 56 (M is K, Rb, K or Rb
solid solution with Li or Na or Cs, x = 0.1 ~
2.0), which has a tetragonal one-dimensional tunnel structure. The tunnel structure of the cation conductor of the present invention is approximately
It has a large diameter of 6.5 Å, there is no bottleneck that acts as a structural barrier to the ion conduction path, and the ion conduction path has appropriate spacing and no interaction, which is an extremely effective structural feature for the ion conduction mechanism. have. K, Rb, a solid solution of K or Rb with Li or Na, and Cs act as conductive ions, all of which have excellent ionic conductivity, especially K,
Rb, K, and a solid solution of Rb with Li or Na are excellent. In addition, in this compound, a part of Ti (0 to 50%) is replaced by Mn 4+ and a part of Ga (0 to 50%)
may be replaced with Al 3+ , Fe 3+ or Cr 3+ . The value of x in the above general formula needs to be within the range of 0.1 to 2.0, but the preferable value is 0.6 to 2.0.
It is 1.2. When the value of x is less than 0.1, it is impossible to form a compound having a tetragonal one-dimensional tunnel structure,
When it exceeds 2, conductivity decreases. The shape of the cation conductor made of the compound of the present invention may be granular, powdery, fibrous, bullet-like, or lump-like as long as it is crystalline. However, due to the specificity of the conduction mechanism, it is most preferable to use a crystal that has developed a plane perpendicular to the tunnel structure axis, in other words, a plane perpendicular to the crystal C axis. In addition, it is most preferable if it can be used as a single single crystal, but depending on the synthesis method, needle-shaped fibrous crystals that are parallel to the crystal C axis can be obtained, so in such a case, it is necessary to bundle them with the same orientation. Accordingly, crystal C
Just make a large surface perpendicular to the axis. The method for producing the cation conductor crystal of the present invention may be any of the sintering method, melting method, hydrothermal method, and flux method, but it must be a flux method using molybdate or tungstate as a flux. is preferred. It is easy to manufacture because the basicity of the melt can be easily controlled, relatively large single crystals are easy to manufacture, and since high pressure is not required during manufacturing, there is no danger, and it can be manufactured at relatively low temperatures. There is no need to worry about pollution caused by evaporation, and it is easy to create various solid solutions.By dissolving ionic species with small ionic radius and high conductivity, such as Na and Li ions, with K and Rb ions, it is possible to create solid solutions with properties. This is because different ion conductors can be easily manufactured and obtained. Effects of the Invention Since the cation conductor of the present invention uses alkali metals such as K, Rb, and Cs as conductive ion species, when it is used as a solid battery, it cannot handle active and dangerous gases like conventional fuel cells. There is no need to use it, and
Because it has a unique large-diameter tunnel, it has the excellent effect of increasing its conductivity at high frequencies by 100 to 1000 times the value of β-alumina at room temperature by aligning the ion conduction direction one-dimensionally. can be played. Example 1 (1) Production of single crystal Potassium oxide, titanium oxide, and gallium oxide powders with a purity of 99.9% were mixed in molar proportions (K 2 O).
They were mixed to have a ratio of 0.7 (TiO 2 ) 1.0 (Ga 2 O 3 ) 0.5 . This mixture and potassium oxide and molybdenum oxide powder as flux raw materials (K 2 O) 1.0
(MoO 3 ) with a mixture at a molar ratio of 1.5 ,
They were mixed at a mol% ratio of 20:80. Fill 130g of the obtained mixture into a platinum crucible,
It was heated and melted at 1300℃ for about 10 hours in a silicon carbide exothermic electric furnace. Thereafter, it was slowly cooled to around 1000°C at a rate of 4°C/h, taken out from the electric furnace, allowed to cool to room temperature, the flux was dissolved with boiling water, and the crystals were separated. The obtained crystals were needle-shaped and elongated in the C-axis direction and were pale gray in color. The average size of the needle-like crystals was 0.1 mm in diameter and 5 mm in length. The results of chemical analysis were K 1.0 Ti 15.0 Ga 17.0 O 56 . In addition, if Rb 3 CO 3 is used instead of K 2 CO 3 ,
If you use Rb 1.0 Ti 15.0 Ga 17.0 O 56 , Cs 2 CO 3
Similar needle-like crystals of Cs 1.0 Ti 15.0 Ga 17.0 C 56 are obtained. (2) Measurement of ionic conductivity The conduction mechanism of the one-dimensional ionic conductor of the compound of the present invention is explained by a different theory from the conventional transmission mechanism of β-alumina. That is, this is explained by the fact that K ions existing in a one-dimensional tunnel move within a region surrounded by random potential disturbances. According to this, when the conductivity is expressed by the complex conductivity σ, it is expressed by the following equation, and the electrical equivalent circuit for analyzing the measured value is shown in FIG. σ=iωε fw ε 0 +iωε p ε 0・C(iω)〓/iωε p ε 0
+C(iω)〓 In Fig. 1, ε p = polarization of ions in the tunnel ε 0 = inductivity of vacuum ε fw = dielectric constant ω related to the tunnel structural framework = angular frequency i = imaginary number C = one-dimensional conduction The constant of the conductivity function (iω) = indicates the frequency-dependent term of the conductivity function of one-dimensional conduction. Conductivity can be determined by alternating current measurement using a deposited gold film as an electrode and under conditions that block K ions. Regarding the crystal obtained in (1) above, that is, the sample with a length of 5 mm and a diameter of 0.1 mm grown in the crystal C-axis direction,
The real part and imaginary part of AC complex conductivity from 10 2 Hz to 325 GHz were calculated using a broadband impedance measuring device and a microwave standing wave method. The measurement results were as follows.
【表】【table】
【表】
以上の結果から次のような特徴を有することが
わかる。
本発明化合物のイオン伝導率は、周波数に著し
く依存し、高周波数域で極めて高イオン伝導率を
示し、これに匹敵するイオン伝導体は従来全くな
い。
また、温度依存性が著しく小さく活性エネルギ
ーは0.048eVで極めて小さく、これに匹敵するイ
オン伝導体は従来全くない。
なお、Kイオンに代え、Rbイオン、Csイオン
を使用した場合、また、KもしくはRbのLiまた
はNaとの固溶体を使用した場合も同様なイオン
伝導率を有していた。
また、Tiの1部をMnで、Gaの1部をAl、Fe、
またはCrで置換しても同様なイオン伝導率が得
られた。[Table] From the above results, it can be seen that it has the following characteristics. The ionic conductivity of the compound of the present invention is significantly dependent on frequency, exhibiting an extremely high ionic conductivity in a high frequency range, and no ionic conductor comparable to this has hitherto existed. In addition, the temperature dependence is extremely small, and the activation energy is extremely small at 0.048 eV, and there is no comparable ionic conductor to date. Note that similar ionic conductivity was obtained when Rb ions or Cs ions were used instead of K ions, or when a solid solution of K or Rb with Li or Na was used. Also, one part of Ti is Mn, one part of Ga is Al, Fe,
Alternatively, similar ionic conductivity was obtained when replacing with Cr.
第1図は本発明の一次元陽イオン伝導体の測定
結果の解析に使用できる電気的等価回路を示す。
εp:トンネル内のイオンの分極、ε0:真空の誘
電率、εfw:トンネル構造枠組に関係した比誘電
率、ω:角周波数、i:虚数、C:一次元伝導の
伝導度関数の定数、(iω)〓:一次元伝導の伝導関
係の周波数依存項。
FIG. 1 shows an electrical equivalent circuit that can be used to analyze the measurement results of the one-dimensional cation conductor of the present invention. ε p : polarization of ions in the tunnel, ε 0 : permittivity of vacuum, ε fw : relative permittivity related to the tunnel structural framework, ω : angular frequency, i : imaginary number, C : conductivity function of one-dimensional conduction. Constant, (iω)〓: Frequency-dependent term of the conduction relationship for one-dimensional conduction.
Claims (1)
Rb、KもしくはRbのLiまたはNaとの固溶体あ
るいはCs、x=0.1〜2.0を表わす)で示される正
方晶系の一次元トンネル構造を有する化合物から
なる陽イオン伝導体。 2 一般式MxTi16-xGa16+xO56(ただし、MはK、
Rb、KもしくはRbのLiまたはNaとの固溶体あ
るいはCs、x=0.1〜2.0を表わす)で示される正
方晶系の一次元トンネル構造を有する化合物で、
Tiの一部をMnで置換した化合物からなる陽イオ
ン伝導体。 3 一般式MxTi16-xGa16+xO56(ただし、MはK、
Rb、KもしくはRbのLiまたはNaとの固溶体あ
るいはCs、x=0.1〜2.0を表わす)で示される正
方晶系の一次元トンネル構造を有する化合物で、
Gaの1部をAl、FeまたはCrで置換した化合物か
らなる陽イオン伝導体。[Claims] 1. General formula M x Ti 16-x Ga 16+x O 56 (where M is K,
A cation conductor consisting of a compound having a tetragonal one-dimensional tunnel structure represented by Rb, K or a solid solution of Rb with Li or Na, or Cs (representing x=0.1 to 2.0). 2 General formula M x Ti 16-x Ga 16+x O 56 (M is K,
A compound having a tetragonal one-dimensional tunnel structure represented by Rb, K or a solid solution of Rb with Li or Na, or Cs, x = 0.1 to 2.0),
A cation conductor made of a compound in which a portion of Ti is replaced with Mn. 3 General formula M x Ti 16-x Ga 16+x O 56 (M is K,
A compound having a tetragonal one-dimensional tunnel structure represented by Rb, K or a solid solution of Rb with Li or Na, or Cs, x = 0.1 to 2.0),
A cation conductor made of a compound in which a portion of Ga is replaced with Al, Fe, or Cr.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61081622A JPS62241821A (en) | 1986-04-09 | 1986-04-09 | Cationic conductor |
| US07/013,433 US4818735A (en) | 1986-02-14 | 1987-02-11 | Tetragonal system tunnel-structured compound AX(GA8MYGA(8+X)-YTI16-X0 56), and cation conductor and heat insulating material composed thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61081622A JPS62241821A (en) | 1986-04-09 | 1986-04-09 | Cationic conductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62241821A JPS62241821A (en) | 1987-10-22 |
| JPH0242770B2 true JPH0242770B2 (en) | 1990-09-26 |
Family
ID=13751428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61081622A Granted JPS62241821A (en) | 1986-02-14 | 1986-04-09 | Cationic conductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62241821A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02277823A (en) * | 1989-04-19 | 1990-11-14 | Natl Inst For Res In Inorg Mater | Production of fiber or filmy product of compound with tetragonal tunnel structure represented by axga16+xti16-xo56 |
-
1986
- 1986-04-09 JP JP61081622A patent/JPS62241821A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62241821A (en) | 1987-10-22 |
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