JPH0243332B2 - - Google Patents

Info

Publication number
JPH0243332B2
JPH0243332B2 JP57133880A JP13388082A JPH0243332B2 JP H0243332 B2 JPH0243332 B2 JP H0243332B2 JP 57133880 A JP57133880 A JP 57133880A JP 13388082 A JP13388082 A JP 13388082A JP H0243332 B2 JPH0243332 B2 JP H0243332B2
Authority
JP
Japan
Prior art keywords
crystal plane
vapor phase
phase growth
compound semiconductor
group compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57133880A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5925217A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57133880A priority Critical patent/JPS5925217A/ja
Publication of JPS5925217A publication Critical patent/JPS5925217A/ja
Publication of JPH0243332B2 publication Critical patent/JPH0243332B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials

Landscapes

  • Semiconductor Lasers (AREA)
JP57133880A 1982-07-31 1982-07-31 半導体装置の製法 Granted JPS5925217A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57133880A JPS5925217A (ja) 1982-07-31 1982-07-31 半導体装置の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57133880A JPS5925217A (ja) 1982-07-31 1982-07-31 半導体装置の製法

Publications (2)

Publication Number Publication Date
JPS5925217A JPS5925217A (ja) 1984-02-09
JPH0243332B2 true JPH0243332B2 (fr) 1990-09-28

Family

ID=15115236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57133880A Granted JPS5925217A (ja) 1982-07-31 1982-07-31 半導体装置の製法

Country Status (1)

Country Link
JP (1) JPS5925217A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2923753B2 (ja) * 1996-08-21 1999-07-26 工業技術院長 Ｉｉｉ族原子層の形成方法
JP4766071B2 (ja) * 1999-03-17 2011-09-07 三菱化学株式会社 半導体基材及びその製造方法
JP4191089B2 (ja) 2004-05-14 2008-12-03 Ｙｋｋ株式会社 スライドファスナー用下止
JP5440304B2 (ja) * 2010-03-19 2014-03-12 富士通株式会社 光半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS5925217A (ja) 1984-02-09

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