JPH0243760A - integrated circuit - Google Patents
integrated circuitInfo
- Publication number
- JPH0243760A JPH0243760A JP19484688A JP19484688A JPH0243760A JP H0243760 A JPH0243760 A JP H0243760A JP 19484688 A JP19484688 A JP 19484688A JP 19484688 A JP19484688 A JP 19484688A JP H0243760 A JPH0243760 A JP H0243760A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- circuit
- diodes
- temperature
- temperature monitoring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Temperature (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、モノリシック集積回路あるいはハイブリッ
ド集積回路等の集積回路の構成に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of an integrated circuit such as a monolithic integrated circuit or a hybrid integrated circuit.
従来この種の集積回路、例えばハイブリッド集積回路は
、それぞれ所望の機能に対応した主要回路のみで構成さ
れていた。また、モノリシック集積回路は、主要回路と
、この主要回路から離れた周辺部に配置された、プロセ
スの良否をチエツクするための素子とで構成されていた
。Conventionally, this type of integrated circuit, such as a hybrid integrated circuit, has been comprised only of main circuits corresponding to desired functions. Furthermore, monolithic integrated circuits are composed of a main circuit and elements for checking the quality of the process, which are placed in a peripheral area away from the main circuit.
上記のような従来構成では、集積回路の温度のモニター
は、温度計を用いるかサーモピュアーを使用して行なわ
なければならず、したがって、集積回路をパッケージも
しくはモールドした後では集積回路上の温度を正確にモ
ニターすることはできなかった。In conventional configurations such as those described above, monitoring of the temperature of the integrated circuit must be done using a thermometer or using a thermopure, and therefore the temperature on the integrated circuit must be monitored after the integrated circuit has been packaged or molded. It was not possible to monitor accurately.
この発明は、1又は2以上のダイオードのみからなる温
度モニター用回路を加えたものである。This invention adds a temperature monitoring circuit consisting only of one or more diodes.
ダイオードの印加電圧と電流との間には、温度をパラメ
ータとする一定の関係式が成り立ち、印加電圧が一定で
も温度が変化すれば流れる電流は変化する。A certain relational expression with temperature as a parameter holds between the voltage applied to the diode and the current, and even if the applied voltage is constant, the flowing current changes if the temperature changes.
したがって、温度モニター用回路を構成するダイオード
に適当な電圧を印加して電流の変化をモニターすること
により、基板上、当該回路を配置した部分の温度がモニ
ターされる。Therefore, by applying an appropriate voltage to the diode constituting the temperature monitoring circuit and monitoring the change in current, the temperature of the portion of the substrate where the circuit is arranged can be monitored.
以下、添付図面を参照して、この発明の一実施例を説明
する。Hereinafter, one embodiment of the present invention will be described with reference to the accompanying drawings.
図は、この発明の一実施例を示すモノリシック集積回路
のブロック図である。同図において、チップ1の上に、
第1ないし第4の回路11〜14が形成されている。こ
れらの各回路は、この集積回路の用途に応じた特定の機
能をもち、それぞれチップ周辺部のワイヤリング用パッ
ド21〜28に電気的に接続されている。The figure is a block diagram of a monolithic integrated circuit showing one embodiment of the present invention. In the same figure, on top of chip 1,
First to fourth circuits 11 to 14 are formed. Each of these circuits has a specific function depending on the use of this integrated circuit, and is electrically connected to wiring pads 21 to 28 on the periphery of the chip.
このうち、回路14は、他の3つの回路11〜13に比
較して消費電力が著しく大きく、したがってその部分で
の温度上昇が、この集積回路が正常に動作するか否かに
大きくかかわってくる。Of these, circuit 14 consumes significantly more power than the other three circuits 11 to 13, and therefore the temperature rise in that part has a large impact on whether or not this integrated circuit operates normally. .
本実施例では、消費電力の大きい回路14の近傍に、3
個のダイオード31〜33を配置しである。これらのダ
イオードは、相互に直列に接続され、温度モニター用回
路30を構成し、チップ周辺部に配置されたワイヤリン
グ用バッド29に電気的に接続されている。In this embodiment, there are three
diodes 31 to 33 are arranged. These diodes are connected in series to form a temperature monitoring circuit 30, and are electrically connected to a wiring pad 29 arranged around the chip.
ここで、ダイオードの印加電圧Vと電流lとの関係は、
次式で与えられる。Here, the relationship between the applied voltage V and current l of the diode is:
It is given by the following formula.
証
l−
1−1(el)
ここで■ :飽和電流、k:ボルツマン定数、g:電子
1個の電荷量、T:絶対温度。Evidence 1-1-1 (el) where ■: saturation current, k: Boltzmann's constant, g: charge amount of one electron, T: absolute temperature.
したがって、印加電圧■が一定でも、温度Tによって流
れる電流■が変わる。そこで、これらのダイオード31
〜33からなる温度モニター用回路30に一定電圧を供
給し、電流をモニターすることによりその部分の温度が
モニターできる。Therefore, even if the applied voltage (2) is constant, the flowing current (2) changes depending on the temperature T. Therefore, these diodes 31
By supplying a constant voltage to the temperature monitoring circuit 30 consisting of the circuits 33 to 33 and monitoring the current, the temperature of that portion can be monitored.
温度モニター用回路30を構成するダイオードは、本実
施例では集積回路の製造プロセス中において、チップ上
に作り込むが、ハイブリッド集積回路においては、基板
上に実装することで、同様に集積回路内に組み込むこと
ができる。In this embodiment, the diodes constituting the temperature monitoring circuit 30 are built on the chip during the integrated circuit manufacturing process, but in the hybrid integrated circuit, they are mounted on the substrate, so that they can be similarly integrated into the integrated circuit. can be incorporated.
また、ダイオードは1個でもよいが、本実施例では複数
のダイオードを直列に接続して用いている。こうするこ
とにより検出する電流が大きくなり、ノイズの影響を受
けにくくなって、より正確なモニターが可能となる。Further, although one diode may be used, in this embodiment, a plurality of diodes are connected in series. This increases the detected current, making it less susceptible to noise and enabling more accurate monitoring.
温度モニター用回路30を配置する場所については、集
積回路を構成する基板上のどこでも可能であるが、本実
施例のように消費電力の最も大きい回路もしくは素子の
近傍に配置することにより、集積回路上、最も温度の高
い部分のモニターが可能となる。要するに、温度が問題
となる部分に配置すればよく、それは1箇所には限らな
い。Although the temperature monitoring circuit 30 can be placed anywhere on the substrate constituting the integrated circuit, it is possible to place the temperature monitoring circuit 30 near the circuit or element that consumes the most power as in this embodiment. On the top, it is possible to monitor the area with the highest temperature. In short, it is only necessary to place it in a part where temperature is a problem, and it is not limited to one place.
以上のようにこの発明は、集積回路中にダイオードから
なる温度モニター用回路を組み込んでいるため、集積回
路の温度を直接モニターでき、特にパッケージもしくは
モールドする集積回路の温度モニターに効果的である。As described above, the present invention incorporates a temperature monitoring circuit consisting of a diode in an integrated circuit, so that the temperature of the integrated circuit can be directly monitored, and is particularly effective for monitoring the temperature of an integrated circuit to be packaged or molded.
ある。be.
1・・・チップ、11〜14・・・回路、30・・・温
度モニター用回路、31〜33・・・ダイオード。1... Chip, 11-14... Circuit, 30... Temperature monitoring circuit, 31-33... Diode.
特許出願人 住友電気工業株式会社
代理人弁理士 長谷用 芳 樹間
塩 1) 辰 也Patent applicant: Sumitomo Electric Industries, Ltd. Representative patent attorney Yoshiki Hase
Salt 1) Tatsuya
Claims (1)
共通基板上に搭載した集積回路において、上記共通基板
上に、1又は2以上のダイオードのみからなる温度モニ
ター用回路を少なくとも1個搭載したことを特徴とする
集積回路。In an integrated circuit in which one or more circuits consisting of passive elements and active elements are mounted on a common substrate, at least one temperature monitoring circuit consisting only of one or more diodes is mounted on the common substrate. An integrated circuit featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19484688A JPH0243760A (en) | 1988-08-04 | 1988-08-04 | integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19484688A JPH0243760A (en) | 1988-08-04 | 1988-08-04 | integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0243760A true JPH0243760A (en) | 1990-02-14 |
Family
ID=16331251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19484688A Pending JPH0243760A (en) | 1988-08-04 | 1988-08-04 | integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0243760A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04264747A (en) * | 1991-02-20 | 1992-09-21 | Nec Corp | Semiconductor integrated circuit testing device |
| JPH11201830A (en) * | 1997-11-17 | 1999-07-30 | Fuji Electric Co Ltd | Driver IC with built-in temperature detection function |
-
1988
- 1988-08-04 JP JP19484688A patent/JPH0243760A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04264747A (en) * | 1991-02-20 | 1992-09-21 | Nec Corp | Semiconductor integrated circuit testing device |
| JPH11201830A (en) * | 1997-11-17 | 1999-07-30 | Fuji Electric Co Ltd | Driver IC with built-in temperature detection function |
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