JPH0244091A - Recovery device of inert gas for single crystal producing furnace - Google Patents
Recovery device of inert gas for single crystal producing furnaceInfo
- Publication number
- JPH0244091A JPH0244091A JP19326888A JP19326888A JPH0244091A JP H0244091 A JPH0244091 A JP H0244091A JP 19326888 A JP19326888 A JP 19326888A JP 19326888 A JP19326888 A JP 19326888A JP H0244091 A JPH0244091 A JP H0244091A
- Authority
- JP
- Japan
- Prior art keywords
- inert gas
- single crystal
- vacuum pump
- furnace
- producing furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011261 inert gas Substances 0.000 title claims abstract description 36
- 239000013078 crystal Substances 0.000 title claims abstract description 24
- 238000011084 recovery Methods 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 238000000746 purification Methods 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 14
- 238000001816 cooling Methods 0.000 abstract description 6
- 230000008439 repair process Effects 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 2
- 238000005299 abrasion Methods 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000007789 gas Substances 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はシリコンなどの単結晶製造炉に用いられる不活
性ガスの回収装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an inert gas recovery device used in a furnace for producing single crystals such as silicon.
シリコンなどの単結晶製造炉では、炉内雰囲気ガスとし
てアルゴンなどの不活性ガスが使用されている。過去に
おいては、雰囲気ガスとして使用された後の不活性ガス
は大気中に放出されていたが、このような不活性ガスは
高価であるため、回収して循環使用するようになってき
ている。In furnaces for producing single crystals such as silicon, an inert gas such as argon is used as the furnace atmosphere gas. In the past, inert gas was released into the atmosphere after being used as an atmospheric gas, but since such inert gas is expensive, it has come to be recovered and recycled for use.
従来、このための不活性ガス回収装置としては、例えば
製造炉、油回転式の真空ポンプ（ロータリーポンプ）、
フィルター、精製装置により不活性ガスの循環系を形成
したものが考えられていた。Conventionally, inert gas recovery devices for this purpose include, for example, manufacturing furnaces, oil rotary vacuum pumps (rotary pumps),
An inert gas circulation system formed by a filter and purification device was considered.
しかし、この不活性ガス回収装置では、ロータリーポン
プから発生するオイルミストが分解して生成するｃｏ、
ｃｏ２などのガスが単結晶に及ぼす悪影響、及び製造炉
内で溶融シリコンと石英ガラスるつぼとの反応により生
成したＳｉＯ微粉がロータリーポンプに及ぼす悪影響が
問題となる。However, in this inert gas recovery device, the oil mist generated from the rotary pump decomposes and generates CO2,
Problems include the negative effects that gases such as CO2 have on the single crystal, and the negative effects that SiO fine powder produced by the reaction between molten silicon and the quartz glass crucible in the manufacturing furnace has on the rotary pump.
そこで、特開昭６１−９７１８７号には、上述した問題
が生じない不活性ガス回収装置が提案されている。Therefore, Japanese Patent Laid-Open No. 61-97187 proposes an inert gas recovery device that does not cause the above-mentioned problems.
この不活性ガス回収装置は、第３図に示すように、製造
炉１、水封式真空ポンプ２、精製装置３を順次接続して
不活性ガスの循環系を形成したものである。このように
水封式真空ポンプ２を用いれば、オイルミストが発生す
ることがな（、また封水によって不活性ガス中のＳｉＯ
を除去することができるので、単結晶の品質への悪影響
及びポンプへの悪影響と同時に解消することができる。As shown in FIG. 3, this inert gas recovery device has a production furnace 1, a water ring vacuum pump 2, and a purification device 3 connected in sequence to form an inert gas circulation system. By using the water ring type vacuum pump 2 in this way, oil mist will not be generated (and the water seal will prevent SiO2 in the inert gas from being generated).
can be removed, so that the adverse effects on the quality of the single crystal and the pump can be eliminated at the same time.
ところで、第３図に示す装置で、水封式真空ポンプ２に
よる真空度をロータリーポンプと同等まで上げようとす
る場合、製造炉１と水封式真空ポンプ２との間にメカニ
カルブースタを設けることが考えられる。By the way, in the apparatus shown in FIG. 3, when trying to raise the degree of vacuum by the water ring vacuum pump 2 to the same level as the rotary pump, a mechanical booster must be installed between the manufacturing furnace 1 and the water ring vacuum pump 2. is possible.
しかしながら、上記のようにメカニカルブースタを設け
た場合、使用後の不活性ガス中に含まれるＳｉＯ微粉が
メカニカルブースタ内に堆積し、シール部が磨耗されて
高真空度が保てなくなったり、シール部が破損するとい
う問題があった。However, when a mechanical booster is installed as described above, fine SiO powder contained in the inert gas after use accumulates inside the mechanical booster, causing the sealing part to wear out and making it impossible to maintain a high degree of vacuum. There was a problem with it being damaged.
このように高真空度が得られないと、製造炉内の不活性
ガスを正常に排気することができなくなり、製造される
単結晶の品質に悪影響を及ぼすことになる。このため、
メカニカルブースタの修理交換を頻繁に行わなければな
らないという問題があった。If such a high degree of vacuum cannot be obtained, the inert gas in the production furnace cannot be normally exhausted, which will have a negative effect on the quality of the single crystal produced. For this reason,
There was a problem in that the mechanical booster had to be repaired and replaced frequently.
なお、不活性ガス中のＳｉＯ微粉を捕集する手段として
フィルターを使用することが考えられる。Note that it is possible to use a filter as a means for collecting SiO fine powder in the inert gas.
しかし、この場合にはフィルターの目詰まりによって真
空度が低下するため、フィルターを頻繁に交換しなけれ
ばならず、根本的な解決策とはならない。However, in this case, the degree of vacuum decreases due to filter clogging, requiring frequent replacement of the filter, which is not a fundamental solution.
本発明は上記問題点を解消するためになされたものであ
り、製造炉内の単結晶の品質を悪化させることのない液
封式真空ポンプを用い、ロータリーポンプと同等の真空
度が得られ、かつ修理交換の頻度が少ない不活性ガス回
収装置を提供することを目的とする。The present invention was made to solve the above problems, and uses a liquid-ring vacuum pump that does not deteriorate the quality of the single crystal in the production furnace, and achieves the same degree of vacuum as a rotary pump. Another object of the present invention is to provide an inert gas recovery device that requires less frequent repair and replacement.
本発明の単結晶製造炉用不活性ガス回収装置は、単結晶
製造炉に液封式真空ポンプ及び精製装置を接続し、製造
炉内に流される不活性ガスの循環系を形成した単結晶製
造炉用不活性ガス回収装置において、上記製造炉と液封
式真空ポンプとの間に、コールドトラップ及びメカニカ
ルブースタを順次設けたことを特徴とするものである。The inert gas recovery device for a single crystal manufacturing furnace of the present invention connects a liquid ring vacuum pump and a purification device to a single crystal manufacturing furnace to form a circulation system for inert gas flowing into the manufacturing furnace. The inert gas recovery device for a furnace is characterized in that a cold trap and a mechanical booster are successively provided between the manufacturing furnace and the liquid ring vacuum pump.
このような不活性ガス回収装置によれば、コールドトラ
ップにより不活性ガス中のＳｉＯ微粉を捕集できるので
、液封式真空ポンプの前にメカニカルブースタを設けて
も、メカニカルブースタ内にＳｉＯ微粉が堆積すること
がなく、メカニカルブースタの修理交換の頻度は少なく
なる。そして、製造炉内の単結晶の品質を悪化させるこ
となく、ロータリーポンプと同等の真空度が得られる。According to such an inert gas recovery device, SiO fine powder in the inert gas can be collected by a cold trap, so even if a mechanical booster is installed in front of a liquid ring vacuum pump, SiO fine powder will not be present in the mechanical booster. There is no build-up and mechanical booster repairs and replacements are less frequent. In addition, a degree of vacuum equivalent to that of a rotary pump can be obtained without deteriorating the quality of the single crystal in the production furnace.
以下、本発明の実施例を第１図及び第２図を参照して説
明する。Embodiments of the present invention will be described below with reference to FIGS. 1 and 2.
第１図は本発明の不活性ガス回収装置の系統図である。FIG. 1 is a system diagram of the inert gas recovery apparatus of the present invention.
第１図において、単結晶製造炉１には、コールドトラッ
プ４、メカニカルブースタ５、水封式真空ポンプ２、精
製装置３が順次接続され、単結晶製造炉１内に流される
不活性ガス（アルゴンガス）の循環系が形成されている
。In FIG. 1, a cold trap 4, a mechanical booster 5, a water ring vacuum pump 2, and a purification device 3 are sequentially connected to a single crystal manufacturing furnace 1, and an inert gas (argon gas) is flowed into the single crystal manufacturing furnace 1. gas) circulation system is formed.
上記コールドトラップ４は第２図に示すような構造を有
している。第２図において、ケーシング１１には不活性
ガス吸入口１２及び不活性ガス排出口１３が設けられ、
ケーシング１１内部には冷却フィンチューブＩ４が設け
られてその内部に冷却水が流される。The cold trap 4 has a structure as shown in FIG. In FIG. 2, the casing 11 is provided with an inert gas inlet 12 and an inert gas outlet 13,
A cooling fin tube I4 is provided inside the casing 11, into which cooling water flows.
このコールドトラップ４では、吸入口１２から入った使
用済アルゴンガス中のＳｉＯ微粉は冷却フィンチューブ
１４の外表面に付着してアルゴンガス中から除去される
。このように冷却フィンチューブ１４外表面に付着した
ＳｉＯは冷却フィンチューブ１４を交換することにより
簡単に処理できる。In this cold trap 4, SiO fine powder in the spent argon gas entering from the suction port 12 adheres to the outer surface of the cooling fin tube 14 and is removed from the argon gas. In this way, SiO attached to the outer surface of the cooling fin tube 14 can be easily disposed of by replacing the cooling fin tube 14.
また、ＳｉＯ微粉か除去されたアルゴンガスは排出口１
３から排出され、メカニカルブースタ５へ吸引された後
、水封式真空ポンプ２へ吸引される。In addition, the argon gas from which the SiO fine powder was removed is discharged from the exhaust port 1.
3 and is sucked into the mechanical booster 5, and then into the water ring vacuum pump 2.
この際、上記コールドトラップ４で除去されなかったわ
ずかなＳｉＯ微粉は水封式真空ポンプ２て水と接触する
ことにより除去される。At this time, a small amount of SiO fine powder not removed by the cold trap 4 is removed by contacting with water using the water ring vacuum pump 2.
更に、精製装置３ではアルゴンガス中に含まれる０２、
Ｎ２などを触媒などによって所定値以下まで除去し、単
結晶製造炉１へ高純度のアルゴンガスを循環させる。な
お、精製装置はこのようなものに限らず、一般の精製装
置を用いることも可能である。Furthermore, in the purification device 3, 02, which is contained in the argon gas,
N2 and the like are removed to below a predetermined value using a catalyst or the like, and high purity argon gas is circulated to the single crystal production furnace 1. Note that the purification apparatus is not limited to this type of apparatus, and it is also possible to use a general purification apparatus.
本発明の不活性ガス回収装置によれば、コールドトラッ
プにより不活性ガス中のＳｉＯ微粉を捕集できるので、
液封式真空ポンプの前にメカニカルブースタを設けても
、メカニカルブースタ内にＳｉＯ微粉が堆積することが
なく、シール部の磨耗、破損を防止できる。したがって
、メカニカルブースタの修理交換の頻度は少なくなる。According to the inert gas recovery device of the present invention, the SiO fine powder in the inert gas can be collected by the cold trap.
Even if a mechanical booster is provided in front of a liquid ring vacuum pump, SiO fine powder does not accumulate in the mechanical booster, and wear and damage to the seal portion can be prevented. Therefore, the frequency of repair and replacement of the mechanical booster is reduced.
そして、製造炉内の単結晶の品質を悪化させることなく
、ロータリーポンプと同等の真空度が得られる。また、
コールドトラップによりＳｉＯ微粉を捕集するため、フ
ィルターを用いる場合のように目詰まりによる真空度の
低下の問題もない。In addition, a degree of vacuum equivalent to that of a rotary pump can be obtained without deteriorating the quality of the single crystal in the production furnace. Also,
Since the SiO fine powder is collected by a cold trap, there is no problem of a decrease in the degree of vacuum due to clogging, unlike when using a filter.
第１図は本発明の実施例における単結晶製造炉用不活性
ガス回収装置の系統図、第２図は同装置に用いられるコ
ールドトラップを一部破断して示す正面図、第３図は従
来の単結晶製造炉用不活性ガス回収装置の系統図である
。
１・・・単結晶製造炉、２・・・水封式真空ポンプ、３
・・・精製装置、４・・・コールドトラップ、５・・・
メカニカルブースタ、１１・・・ケーシング、１２・・
・不活性ガス吸入口、１３・・・不活性ガス排出口、１
４・・・冷却フィンチューブ。
出願人代理人 弁理士 鈴江武彦Fig. 1 is a system diagram of an inert gas recovery device for a single crystal production furnace according to an embodiment of the present invention, Fig. 2 is a partially cutaway front view of a cold trap used in the same device, and Fig. 3 is a conventional FIG. 2 is a system diagram of an inert gas recovery device for a single crystal manufacturing furnace. 1...Single crystal production furnace, 2...Water ring vacuum pump, 3
... Purification equipment, 4... Cold trap, 5...
Mechanical booster, 11...Casing, 12...
・Inert gas inlet, 13...Inert gas outlet, 1
4... Cooling fin tube. Applicant's agent Patent attorney Takehiko Suzue
Claims (1)
、製造炉内に流される不活性ガスの循環系を形成した単
結晶製造炉用不活性ガス回収装置において、上記製造炉
と液封式真空ポンプとの間に、コールドトラップ及びメ
カニカルブースタを順次設けたことを特徴とする単結晶
製造炉用不活性ガス回収装置。In an inert gas recovery device for a single crystal manufacturing furnace, which connects a liquid ring vacuum pump and a purification device to a single crystal manufacturing furnace to form a circulation system for inert gas flowing into the manufacturing furnace, the above manufacturing furnace and a liquid ring An inert gas recovery device for a single crystal production furnace, characterized in that a cold trap and a mechanical booster are successively installed between a vacuum pump and a vacuum pump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19326888A JPH0244091A (en) | 1988-08-02 | 1988-08-02 | Recovery device of inert gas for single crystal producing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19326888A JPH0244091A (en) | 1988-08-02 | 1988-08-02 | Recovery device of inert gas for single crystal producing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0244091A true JPH0244091A (en) | 1990-02-14 |
Family
ID=16305114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19326888A Pending JPH0244091A (en) | 1988-08-02 | 1988-08-02 | Recovery device of inert gas for single crystal producing furnace |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0244091A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013011582A1 (en) * | 2011-07-20 | 2013-01-24 | Ｆｔｂ研究所株式会社 | Vacuum pipe trap system for silicon single crystal growth device and pipe cleaning method using the system |
| US10280980B2 (en) | 2012-09-24 | 2019-05-07 | Ntn Corporation | Cooling structure for bearing device |
| CN117888197A (en) * | 2023-12-29 | 2024-04-16 | 连城凯克斯科技有限公司 | A single crystal furnace body pressure control device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6197187A (en) * | 1984-10-17 | 1986-05-15 | Toshiba Ceramics Co Ltd | Device for recovering inert gas for pulling device of single crystal |
| JPS62207794A (en) * | 1986-03-06 | 1987-09-12 | Toshiba Mach Co Ltd | Buffer tank for silicon single crystal pulling machine |
-
1988
- 1988-08-02 JP JP19326888A patent/JPH0244091A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6197187A (en) * | 1984-10-17 | 1986-05-15 | Toshiba Ceramics Co Ltd | Device for recovering inert gas for pulling device of single crystal |
| JPS62207794A (en) * | 1986-03-06 | 1987-09-12 | Toshiba Mach Co Ltd | Buffer tank for silicon single crystal pulling machine |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013011582A1 (en) * | 2011-07-20 | 2013-01-24 | Ｆｔｂ研究所株式会社 | Vacuum pipe trap system for silicon single crystal growth device and pipe cleaning method using the system |
| US10280980B2 (en) | 2012-09-24 | 2019-05-07 | Ntn Corporation | Cooling structure for bearing device |
| CN117888197A (en) * | 2023-12-29 | 2024-04-16 | 连城凯克斯科技有限公司 | A single crystal furnace body pressure control device |
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