JPH0244257B2 - INGAZNMGO5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO - Google Patents

Description

[Detailed description of the invention]

INDUSTRIAL APPLICATION FIELD The present invention relates to a compound having a hexagonal layered structure represented by InSaZnMgO ₅ , which is a new compound useful as an optical functional material, a semiconductor material, etc., and a method for producing the same. Prior Art A conventional compound having a hexagonal layered structure represented by (Yb ³⁺ Fe ³⁺ O ₃ ) _o Fe ²⁺ O (n represents an integer) was synthesized by the applicant and is a known compound. ing. _{YbFe2O4 , Yb2Fe3O7 , Yb3Fe4O10 , and _}
Lattice constant of Yb ₄ Fe ₅ O ₁₃ as hexagonal system, YbO _1.5
Table 1 shows the number of layers in the unit cell, FeO _1.5 layer, and Fe ₂ O _2.5 layer.

【table】

[Table] These compounds are compounds with a layered structure in which n (n: 1, 2, 3,...) moles of YbFeO ₃ are combined with 1 mole of iron oxide (FeO). be. Purpose of the Invention The present invention is based on the above chemical formula of (YbFeO ₃ ) _o FeO, where n=1/2, In ³⁺ instead of Yb ³⁺ , Ga ³⁺ instead of Fe ³⁺ , and Fe ²⁺ . Instead (Zn ²⁺ +
The object of the present invention is to provide a novel compound that can replace Mg ²⁺ ). Structure of the Invention The compound of the present invention is represented by InGaZnMgO ₅ , and in the ionic crystal model, In ³⁺ (Ga ³⁺ Zn ²⁺ )
Described as Mg ²⁺ O ₅ ^2- , its structure consists of _1.5 layers of InO,
It is formed by laminating a (GaZn)O _2.5 layer and a MgO layer, and one of its characteristics is that it has significant structural anisotropy. Zn ²⁺ forms a (GaZn)O _2.5 layer with Ga ³⁺ ,
Mg ²⁺ forms the MgO layer. The lattice constants as a hexagonal crystal system are as follows. a=3.300±0.001 (Å) c=22.30±0.01 (Å) Planar index (hkl), interplanar spacing (d (Å)) of this compound
(d _p is the measured value, d _c is the calculated value) and the relative reflection intensity I (%) for X-rays are shown in Table 2.

【table】

【table】

[Table] This compound can be used as a photofunctional material, a semiconductor material, a catalyst material, etc. Examples include use as a phosphor and a semiconductor element. This compound can be produced by the following method. Metallic indium or indium oxide or a compound that is decomposed into indium oxide by heating; Metallic gallium or gallium oxide or a compound that is decomposed into gallium oxide by heating;
The ratio of indium, gallium, zinc, and magnesium is 1 in atomic ratio of metallic zinc, zinc oxide, or a compound decomposed to zinc oxide by heating, and metallic magnesium, magnesium oxide, or a compound decomposed to magnesium oxide by heating. Mix it in a ratio of 1:1:1,
The mixture is heated at 600°C or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere such that indium and gallium are not reduced to their trivalent state, and zinc and magnesium are not reduced to their divalent state. It can be manufactured and obtained. Commercially available starting materials for use in the present invention may be used as they are, but in order for the chemical reaction to proceed quickly, the particle size is preferably small, particularly preferably 10 μm or less. Further, when used as an optical functional material or a semiconductor material, a highly pure material is preferable because contamination with impurities is avoided. This raw material is thoroughly mixed as it is or with an alcohol, acetone, or the like. The mixing ratio of these is such that the ratio of In, Ga, Zn, and Mg is 1:1:1:1 in terms of atomic ratio. If this ratio is off, a single phase of the target compound cannot be obtained. This mixture is stored in the air or in an oxidizing atmosphere, or when In and Ga are each in a trivalent ion state,
It is heated at 600° C. or higher in a reducing atmosphere to such an extent that Zn and Mg cannot be reduced from their divalent state. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it may be rapidly cooled to 0°C or rapidly drawn out into the atmosphere.
The powder of the obtained compound was colorless and was found to have a crystalline structure by powder X-ray diffraction. Its crystal structure is a layered structure, with _1.5 layers of InO, (Ga,
It is formed by stacking Zn)O _2.5 layer and MgO layer. Examples In ₂ O ₃ powder with a purity of 99.99% or more, Ga ₂ O ₃ powder with a purity of 99.9% or more, reagent grade ZnO, and reagent grade ZnO
MgO powder was weighed at a molar ratio of 1:1:2:2, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to obtain a fine powder mixture with an average particle size of several μm. This mixture was sealed in a platinum tube, placed in a furnace set at 1300°C, heated for 3 days, and then the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample is a single phase of _InSaZnMgO5 ,
The interplanar spacing d _p (Å) of each reflection was determined by powder X-ray diffraction method.
and the relative reflection intensity was measured. The results were as shown in Table 2 above. The lattice constants as a hexagonal crystal system were a=3.300±0.001 (Å) and c=22.30±0.001 (Å). The interplanar spacing (d _c (Å)) calculated from the above lattice constant and each reflection (hkl) in Table 2 is the actual interplanar spacing (d _p
(Å)) is in excellent agreement. Effects of the Invention The present invention provides novel compounds useful as optical functional materials, semiconductor materials, and catalysts.

Claims (1)

[Claims] 1. A compound having a hexagonal layered structure represented by InGaZnMgO ₅ . 2 Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; Metallic gallium or gallium oxide or a compound that decomposes into gallium oxide when heated; Metallic zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. and magnesium metal, magnesium oxide, or a compound decomposed into magnesium oxide by heating, such that the atomic ratio of indium, gallium, zinc, and magnesium is 1:1:1:1, and the mixture is prepared. is heated at a temperature of 600°C or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere to the extent that indium and gallium are not reduced to a trivalent state, and zinc and magnesium are not reduced to a divalent state. A method for producing a compound having a hexagonal layered structure represented by _InGaZnMgO5 .