JPH0245910A - Inspection of reticle - Google Patents
Inspection of reticleInfo
- Publication number
- JPH0245910A JPH0245910A JP63196954A JP19695488A JPH0245910A JP H0245910 A JPH0245910 A JP H0245910A JP 63196954 A JP63196954 A JP 63196954A JP 19695488 A JP19695488 A JP 19695488A JP H0245910 A JPH0245910 A JP H0245910A
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- pattern
- film
- quartz glass
- glass plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007689 inspection Methods 0.000 title claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 15
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 239000006096 absorbing agent Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 12
- 238000000576 coating method Methods 0.000 abstract description 3
- 230000002745 absorbent Effects 0.000 abstract 2
- 239000002250 absorbent Substances 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の製造工程で用いられるレティク
ルの検査方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for inspecting a reticle used in the manufacturing process of semiconductor devices.
従来、この種の検査方法には、レティクル自体にレーザ
ー光をあて、その反射光を検出して異物を検査するもの
、及び第３図に示すように、レティクルのパターンを石
英ガラス板に転写し、間接的に検査するものがある。Conventionally, this type of inspection method involves shining a laser beam onto the reticle itself and detecting the reflected light to inspect for foreign objects, and as shown in Figure 3, the reticle pattern is transferred onto a quartz glass plate. , there are things that are inspected indirectly.
すなわち第３図（ａ）に示すように、石英ガラス板１上
にアルミニウム膜またはクロム膜１１とフォトレジスト
膜１２を形成する。次に第３図（ｂ）に示すように、対
象とするレティクル３をマスクとしてフォトレジスト膜
１２をパターニングする。That is, as shown in FIG. 3(a), an aluminum film or chromium film 11 and a photoresist film 12 are formed on a quartz glass plate 1. Next, as shown in FIG. 3(b), the photoresist film 12 is patterned using the target reticle 3 as a mask.
次に第３図（ｃ）に示すように、パターニングされたフ
ォトレジスト膜をマスクとしてクロム膜１１をエツチン
グし、レティクルのパターン４を転写する。そしてこの
パターン４が転写されたクロム膜１１Ａを有する石英ガ
ラス板１を透過方式のマスク検査方法を用いて検査を行
う。Next, as shown in FIG. 3(c), the chromium film 11 is etched using the patterned photoresist film as a mask, and the pattern 4 of the reticle is transferred. Then, the quartz glass plate 1 having the chromium film 11A onto which this pattern 4 has been transferred is inspected using a transmission mask inspection method.
上述した従来のレティクル検査方法のうち、レーザー光
を用いるものは異物の検出サイズに限界がある事や、半
導体ウェーハへの焼き付はパターンとの相違等があるた
め、半導体ウェーハに焼き付けたパターンにより近い、
第３図て説明した間接的な検査方法が主に用いられてい
た。しかしながらアルミニウム膜やクロム膜１１をエツ
チングしなくてはならない為、そのプロセス及び装置を
必要とする事や、焼き付けて異物有無の確認がとれるま
での時間が１〜２時間必要となるなどの欠点がある。Among the conventional reticle inspection methods mentioned above, those that use laser light have a limit in the detection size of foreign objects, and the pattern printed on the semiconductor wafer differs from the pattern. close,
The indirect inspection method explained in Figure 3 was mainly used. However, since the aluminum film and chromium film 11 must be etched, it requires a process and equipment, and it takes 1 to 2 hours to confirm the presence of foreign matter after baking. be.
またクロム膜１］のエツチングを行う為、レジスト上で
作られた０、５〜１．０μｍ程度の微少の欠陥は、サイ
ドエツチング等によって消えてしまい、このような微少
欠陥の検出は不可能であるといった欠点がある。Furthermore, since the chromium film 1] is etched, minute defects of about 0.5 to 1.0 μm created on the resist disappear by side etching, etc., making it impossible to detect such minute defects. There are some drawbacks.
本発明のレティクルの検査方法は、石英ガラス板上に吸
光剤入りのレジスト膜またはＣＥＬ膜を形成する工程と
、レティクルをマスクとして露光し前記レジスト膜また
はＣＥ Ｌ 膜にレティクルのパターンを転写する工程
と、転写されたパターンを有する前記石英ガラス板を透
過方式のマスク検査装置を用いて検査する工程とを含ん
で構成されれる。The reticle inspection method of the present invention includes a step of forming a resist film containing a light absorber or a CEL film on a quartz glass plate, and a step of exposing the reticle as a mask to transfer the pattern of the reticle onto the resist film or CEL film. and a step of inspecting the quartz glass plate having the transferred pattern using a transmission type mask inspection device.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（ａ）、（ｂ）は本発明の第１の実施例を説明す
るための石英ガラス板及びレティクルの断面図である。FIGS. 1(a) and 1(b) are cross-sectional views of a quartz glass plate and a reticle for explaining a first embodiment of the present invention.
まず、第１図（ａ）に示すように、石英ガラス板１の表
面に５００ｎｍ以上の波長を有する光を９０％以上吸収
する吸光剤入りのフォトレジスト膜２を塗布法により形
成する。First, as shown in FIG. 1(a), a photoresist film 2 containing a light absorbing agent that absorbs 90% or more of light having a wavelength of 500 nm or more is formed on the surface of a quartz glass plate 1 by a coating method.
次に第１図（ｂ）に示すように、検査すべきレティクル
３をマスクとし露光・パターニングを行ない、レティク
ル３のパターン４を転写する。この時の露光波長は４３
６ｎｍを使用した。Next, as shown in FIG. 1(b), exposure and patterning are performed using the reticle 3 to be inspected as a mask, and the pattern 4 of the reticle 3 is transferred. The exposure wavelength at this time is 43
6 nm was used.
次にこのように処理した石英ガラス板１を、５００ｎｍ
以下の波長をフィルターを用いて除去した光源を有する
透過方式マスク検査装置にセットし、パターン欠陥の検
査を行う。Next, the quartz glass plate 1 treated in this way was
Pattern defects are inspected using a transmission mask inspection device equipped with a light source that removes the following wavelengths using a filter.
水弟１の実施例では露光波長をＧ線（４３６ｎｍ）に限
って説明したが、露光波長とレジストの吸光波長が異っ
ている事で検査が可能である事から、■線やＨ線等を使
用した場合も実施可能である。In the example of Mizui 1, we explained that the exposure wavelength was limited to the G line (436 nm), but since the exposure wavelength and the absorption wavelength of the resist are different, inspection is possible. It is also possible to implement the method using .
第２図＜ａ）、（ｂ）は、本発明の第２の実施例を説明
するための石英ガラス板及びレティクルの断面図である
。FIGS. 2A and 2B are cross-sectional views of a quartz glass plate and a reticle for explaining a second embodiment of the present invention.
まず第２図（ａ）に示すように、石英ガラス板１上に、
露光波長で光反応を起すＣＥ Ｌ （Ｃｏｎｔｒａｓｔ
ｅｎｈａｎｃｅｄ ＬｉｔｈｏＩ！ｒａｐｈＶ）膜５を
塗布法により形成する。First, as shown in FIG. 2(a), on a quartz glass plate 1,
CE L (Contrast
enhanced LithoI! raphV) film 5 is formed by a coating method.
次に、第２図（ｂ）に示すように、レティクル３を用い
て露光し、パターン４をＣＥＬ膜５に転写する。ＣＥＬ
膜は露光された部分は透明なＣＥＬ膜５Ａとなる。Next, as shown in FIG. 2(b), the pattern 4 is transferred onto the CEL film 5 by exposure using the reticle 3. CEL
The exposed portion of the film becomes a transparent CEL film 5A.
次で、露光波長域と同じ波長域に限定された光源を有す
る透過式マスク検査装置にこの石英ガラス板をセットし
て検査を行う。Next, this quartz glass plate is set in a transmission type mask inspection device having a light source limited to the same wavelength range as the exposure wavelength range, and an inspection is performed.
この第２の実施例では、フォトレジスト膜のかわりにＣ
ＥＬ膜を用いる事により、フォトレジストの持つ解像特
性以上のより小さい欠陥や異物の検査が可能である。In this second embodiment, instead of the photoresist film, C.
By using an EL film, it is possible to inspect smaller defects and foreign substances that have better resolution than photoresist.
このように本実施例によれば、レティクルのパターンを
フォトレジスト膜やＣＥＬ膜に直接転写し検査を行うこ
とができるため、従来必要としていたアルミニウムやク
ロム膜のエツチング工程が不要となるばかりでなく、よ
り小さな欠陥や異物の検査を行うことができる。In this way, according to this embodiment, the reticle pattern can be directly transferred to the photoresist film or CEL film for inspection, which not only eliminates the need for the etching process for aluminum and chromium films that was previously required. , it is possible to inspect for smaller defects and foreign objects.
以上説明したように本発明は、石英ガラス板上に形成し
た吸光剤入りのレジスト膜またはＣＥＬ膜にレティクル
のパターンを転写し、この転写されたパターンを有する
石英ガラス板を透過方式のマスク検査装置を用いて検査
することにより、実際のフォトグラフィ工程により近い
状態でレティクルの微少の異物や欠陥を迅速に検査でき
る。As explained above, the present invention transfers a reticle pattern to a resist film containing a light absorbing agent or a CEL film formed on a quartz glass plate, and then uses a transmission-type mask inspection apparatus to transfer a reticle pattern to a quartz glass plate having the transferred pattern. By using this method, it is possible to quickly inspect the reticle for minute foreign objects and defects in conditions that are closer to those in the actual photography process.
【図面の簡単な説明】
第１図（ａ）、（ｂ）及び第２図（ａ）、（ｂ）は本発
明の第１及び第２の実施例を説明するための石英ガラス
板及びレティクルの断面図、第３図（ａ）〜（Ｃ）は従
来のレティクルの検査方法の一例を説明するための石英
ガラス板及びレティクの断面図である。
１・・・石英ガラス板、２・・・吸光剤入りフォトレジ
スト膜、３・・・レティクル、４・・・パターン、５・
・・ＣＥ Ｌ膜、１１・・・クロム膜、１２・・・フォ
トレジスト膜。[Brief Description of the Drawings] Figures 1 (a), (b) and 2 (a), (b) are quartz glass plates and reticles for explaining the first and second embodiments of the present invention. 3A to 3C are cross-sectional views of a quartz glass plate and a reticle for explaining an example of a conventional reticle inspection method. DESCRIPTION OF SYMBOLS 1... Quartz glass plate, 2... Photoresist film containing a light absorbing agent, 3... Reticle, 4... Pattern, 5...
...CE L film, 11...Chromium film, 12...Photoresist film.
Claims (1)
膜を形成する工程と、レティクルをマスクとして露光し
前記レジスト膜またはＣＥＬ膜にレティクルのパターン
を転写する工程と、転写されたパターンを有する前記石
英ガラス板を透過方式のマスク検査装置を用いて検査す
る工程とを含むことを特徴とするレティクルの検査方法
。Resist film with light absorber or CEL on quartz glass plate
a step of forming a film, a step of exposing the reticle as a mask and transferring the pattern of the reticle to the resist film or CEL film, and inspecting the quartz glass plate having the transferred pattern using a transmission type mask inspection device. A method for inspecting a reticle, comprising the steps of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63196954A JPH0245910A (en) | 1988-08-05 | 1988-08-05 | Inspection of reticle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63196954A JPH0245910A (en) | 1988-08-05 | 1988-08-05 | Inspection of reticle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0245910A true JPH0245910A (en) | 1990-02-15 |
Family
ID=16366420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63196954A Pending JPH0245910A (en) | 1988-08-05 | 1988-08-05 | Inspection of reticle |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0245910A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103115928A (en) * | 2013-02-05 | 2013-05-22 | 深圳市华星光电技术有限公司 | Device, machine and method for checking foreign substances on surfaces of glass |
-
1988
- 1988-08-05 JP JP63196954A patent/JPH0245910A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103115928A (en) * | 2013-02-05 | 2013-05-22 | 深圳市华星光电技术有限公司 | Device, machine and method for checking foreign substances on surfaces of glass |
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