JPH0246047Y2 - - Google Patents

Info

Publication number
JPH0246047Y2
JPH0246047Y2 JP108384U JP108384U JPH0246047Y2 JP H0246047 Y2 JPH0246047 Y2 JP H0246047Y2 JP 108384 U JP108384 U JP 108384U JP 108384 U JP108384 U JP 108384U JP H0246047 Y2 JPH0246047 Y2 JP H0246047Y2
Authority
JP
Japan
Prior art keywords
reaction tube
quartz reaction
fan
furnace body
air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP108384U
Other languages
Japanese (ja)
Other versions
JPS60113629U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP108384U priority Critical patent/JPS60113629U/en
Publication of JPS60113629U publication Critical patent/JPS60113629U/en
Application granted granted Critical
Publication of JPH0246047Y2 publication Critical patent/JPH0246047Y2/ja
Granted legal-status Critical Current

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Landscapes

  • Heat-Exchange Devices With Radiators And Conduit Assemblies (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【考案の詳細な説明】 〔考案の属する技術分野の説明〕 本考案は急冷機構付結晶成長装置に関するもの
である。
[Detailed description of the invention] [Description of the technical field to which the invention pertains] The present invention relates to a crystal growth apparatus with a rapid cooling mechanism.

〔従来技術の説明〕[Description of prior art]

化合物半導体の液相エピ成長においては、一般
に、高純度黒鉛製の治具(以下カーボンボートと
いう)が使用されている。カーボンボートは比較
的熱容量が大きく成長終了後も冷却に時間を要
し、この間加熱状態が続くことになる。
In liquid-phase epitaxial growth of compound semiconductors, a jig made of high-purity graphite (hereinafter referred to as a carbon boat) is generally used. Carbon boats have a relatively large heat capacity and require time to cool down even after growth is complete, and the heated state continues during this time.

成長基板を長時間加熱すると、素材そのものの
熱分解あるいはドーピング材の抜け等が発生し、
いわゆる熱劣化を生じデイバイスの特性を損うこ
とになる。
If the growth substrate is heated for a long time, thermal decomposition of the material itself or loss of the doping material may occur.
This causes so-called thermal deterioration, which impairs the characteristics of the device.

この為従来は、炉体と炉芯管との間に冷却用の
空気を流す構造を主として採用していたが、この
方法では、室温まで冷却するのに3〜5時間を要
すものである。
For this reason, in the past, a structure was mainly used in which cooling air was flowed between the furnace body and the furnace core tube, but with this method, it took 3 to 5 hours to cool the furnace to room temperature. .

〔考案の目的の説明〕[Explanation of the purpose of the invention]

本考案はエピ成長終了後、直ちに成長基板を冷
却し熱劣化が生じないようにした装置を提供する
ものである。
The present invention provides an apparatus that cools the growth substrate immediately after epitaxial growth to prevent thermal deterioration.

〔考案の構成〕[Structure of the idea]

本考案は石英反応管と、該石英反応管を囲みこ
れを加熱する炉体とよりなる横型の結晶成長装置
において、石英反応管の軸方向に炉体を移動する
スライド機構部と、石英反応管及び炉体の外周を
囲む筐体と、筐体外から空気を吸い込みこれを石
英反応管に強制的に吹き付ける第1のフアンと、
第1のフアンに対向する位置に設置し、石英反応
管で熱交換された空気を強制的に排気する第2の
フアンと、第2のフアンの近傍に設置し、排気さ
れる空気を冷却するラジエターとを有することを
特徴とする急冷機構付結晶成長装置である。
The present invention is a horizontal crystal growth apparatus consisting of a quartz reaction tube and a furnace body that surrounds and heats the quartz reaction tube. and a casing that surrounds the outer periphery of the furnace body, and a first fan that sucks air from outside the casing and forcibly blows it onto the quartz reaction tube.
A second fan is installed opposite the first fan and forcibly exhausts the air that has been heat exchanged with the quartz reaction tube, and a second fan is installed near the second fan to cool the exhausted air. This is a crystal growth apparatus with a rapid cooling mechanism, characterized by having a radiator.

〔実施例の説明〕[Explanation of Examples]

以下に、本考案の一実施例を図により説明す
る。
An embodiment of the present invention will be described below with reference to the drawings.

第1図、第2図において、石英反応管2を片持
ち式で水平姿勢に保持し、これを筐体1内に収納
し、一方、石英反応管2を加熱する炉体7をスラ
イド機構部8により反応管2の軸方向に移動可能
に設置する。さらに、石英反応管2の一側に筐体
1外から空気を吸い込みこれを石英反応管2に吹
き付ける第1のフアン4を設置するとともに、そ
の他側に反応管2で熱交換された空気を強制的に
排気する第2のフアン5を設置する。第2のフア
ン5の吸込側には筐体外に排気する空気の冷却用
ラジエター6を設置する。
In FIGS. 1 and 2, the quartz reaction tube 2 is held horizontally in a cantilevered manner and is housed in the housing 1, while the furnace body 7 for heating the quartz reaction tube 2 is moved into the slide mechanism. 8 so as to be movable in the axial direction of the reaction tube 2. Furthermore, a first fan 4 is installed on one side of the quartz reaction tube 2 to suck air from outside the casing 1 and blow it onto the quartz reaction tube 2, while forcing air heat exchanged in the reaction tube 2 to the other side. A second fan 5 is installed to exhaust the air. On the suction side of the second fan 5, a radiator 6 for cooling air to be exhausted outside the housing is installed.

ラジエター6は反応管2を冷却した空気が高温
のまま筐体外部へ排気されるのを防止するための
水冷式ラジエターである。3は成長基板を載置し
たカーボンボートであり、該カーボンボート3は
反応管2内に設置される。
The radiator 6 is a water-cooled radiator for preventing the air that has cooled the reaction tube 2 from being exhausted to the outside of the housing while remaining at a high temperature. 3 is a carbon boat on which a growth substrate is placed, and the carbon boat 3 is installed inside the reaction tube 2.

エピタキシヤル成長中は、炉体7をAの使用位
置にセツトして反応管2を囲みこれを加熱し、所
定のシーケンスに従つて成長を行なう。次に成長
終了と同時にスライド機構部8により炉体7をB
の待機位置迄移動させて反応管を露出させる。こ
のとき、両フアン4,5を回すことにより、空気
は、第1のフアン4により筐体1内へ導かれ、反
応管2を冷却した後ラジエター6で熱交換され第
2のフアン5から排気される。
During epitaxial growth, the furnace body 7 is set at the use position A, surrounds the reaction tube 2 and heats it, and the growth is performed according to a predetermined sequence. Next, at the same time as the growth is completed, the furnace body 7 is moved to B by the slide mechanism section 8.
to the standby position to expose the reaction tube. At this time, by rotating both fans 4 and 5, air is guided into the housing 1 by the first fan 4, cools the reaction tube 2, exchanges heat with the radiator 6, and is exhausted from the second fan 5. be done.

〔考案の効果の説明〕 以上説明したように本考案によれば、吸引、排
気の空気量のバランスがとれ、反応管の外周を流
れる流量、流速が大きくとれ、冷却効果の高い装
置が実現でき、したがつて、カーボンボートの温
度を成長終了の約800℃から室温まで60分程度で
降下させることができる。このため、成長基板の
熱劣化を極力押えることができるばかりでなく、
本来成長工程には無益であつたボート取り出しま
での冷却時間が大幅に短縮でき、装置の稼動サイ
クルが多くでき生産性の向上に寄与できるもので
ある。
[Explanation of the effects of the invention] As explained above, according to the invention, the amount of suction and exhaust air can be balanced, the flow rate and flow rate around the outer circumference of the reaction tube can be large, and a device with high cooling effect can be realized. Therefore, the temperature of the carbon boat can be lowered from about 800°C, which is the temperature at which growth is completed, to room temperature in about 60 minutes. Therefore, not only can thermal deterioration of the growth substrate be suppressed as much as possible, but
The cooling time before taking out the boat, which was originally useless in the growth process, can be significantly shortened, and the operating cycle of the equipment can be increased, contributing to improved productivity.

さらに、毎成長サイクルでの成長温度から室温
までの大幅な昇降温がなくなり、炉体へのダメー
ジの減少及び炉温の再現性、安定性を向上できる
効果を有するものである。
Furthermore, there is no need to significantly increase or decrease the temperature from the growth temperature to room temperature in each growth cycle, which has the effect of reducing damage to the furnace body and improving the reproducibility and stability of the furnace temperature.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の主要部を説明する構成図、第
2図は本考案装置の全体構成図である。 1……筐体、2……石英反応管、3……カーボ
ンボート、4……第1のフアン、5……第2のフ
アン、6……水冷式ラジエター、7……炉体、8
……スライド機構部。
FIG. 1 is a block diagram illustrating the main parts of the present invention, and FIG. 2 is an overall block diagram of the apparatus of the present invention. 1... Housing, 2... Quartz reaction tube, 3... Carbon boat, 4... First fan, 5... Second fan, 6... Water-cooled radiator, 7... Furnace body, 8
...Slide mechanism section.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 石英反応管と、該石英反応管を囲みこれを加熱
する炉体とよりなる横型の結晶成長装置におい
て、石英反応管の軸方向に炉体を移動するスライ
ド機構部と、石英反応管及び炉体の外周を囲む筐
体と、筐体外から空気を吸い込みこれを石英反応
管に強制的に吹き付ける第1のフアンと、第1の
フアンに対向する位置に設置し、石英反応管で熱
交換された空気を強制的に排気する第2のフアン
と、第2のフアンの近傍に設置し、排気される空
気を冷却するラジエターとを有することを特徴と
する急冷機構付結晶成長装置。
In a horizontal crystal growth apparatus comprising a quartz reaction tube and a furnace body that surrounds and heats the quartz reaction tube, the slide mechanism section moves the furnace body in the axial direction of the quartz reaction tube, the quartz reaction tube and the furnace body. A casing surrounding the outer periphery of the quartz reaction tube, a first fan that sucks air from outside the casing and forcibly blows it onto the quartz reaction tube; A crystal growth apparatus with a rapid cooling mechanism, comprising: a second fan that forcibly exhausts air; and a radiator that is installed near the second fan and cools the exhausted air.
JP108384U 1984-01-09 1984-01-09 Crystal growth equipment with quenching mechanism Granted JPS60113629U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP108384U JPS60113629U (en) 1984-01-09 1984-01-09 Crystal growth equipment with quenching mechanism

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP108384U JPS60113629U (en) 1984-01-09 1984-01-09 Crystal growth equipment with quenching mechanism

Publications (2)

Publication Number Publication Date
JPS60113629U JPS60113629U (en) 1985-08-01
JPH0246047Y2 true JPH0246047Y2 (en) 1990-12-05

Family

ID=30473500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP108384U Granted JPS60113629U (en) 1984-01-09 1984-01-09 Crystal growth equipment with quenching mechanism

Country Status (1)

Country Link
JP (1) JPS60113629U (en)

Also Published As

Publication number Publication date
JPS60113629U (en) 1985-08-01

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