JPH0246361U - - Google Patents
Info
- Publication number
- JPH0246361U JPH0246361U JP12480188U JP12480188U JPH0246361U JP H0246361 U JPH0246361 U JP H0246361U JP 12480188 U JP12480188 U JP 12480188U JP 12480188 U JP12480188 U JP 12480188U JP H0246361 U JPH0246361 U JP H0246361U
- Authority
- JP
- Japan
- Prior art keywords
- ions
- semiconductor wafer
- wafer holder
- wafer
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001125 extrusion Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第１図は本考案に係る第１の実施例を示す縦断
正面図、第２図は第２の実施例を示す縦断正面図
である。第３図はイオン注入装置の概略構成図、
第４図はウエイフロータイプのエンドステーシヨ
ンの断面図、第５図はウエーハ押出機構の縦断面
図、第６図は同じく平面図である。
１……半導体ウエーハ、２……真空チヤンバー
、２１，３１……ウエーハホルダ、２１ａ，３１
ａ……細溝、２３，３３……駆動源、２４，３８
……押出棒。
FIG. 1 is a longitudinal sectional front view showing a first embodiment of the present invention, and FIG. 2 is a longitudinal sectional front view showing a second embodiment. Figure 3 is a schematic diagram of the ion implantation device;
FIG. 4 is a sectional view of the wafer flow type end station, FIG. 5 is a longitudinal sectional view of the wafer extrusion mechanism, and FIG. 6 is a plan view. 1... Semiconductor wafer, 2... Vacuum chamber, 21, 31... Wafer holder, 21a, 31
a... Thin groove, 23, 33... Drive source, 24, 38
...Extrusion rod.
Claims (1)
バー内に、半導体ウエーハを受納する上向きの傾
斜状態と、イオンを注入する鉛直状態と、真空チ
ヤンバー外へ排出する下向きの傾斜状態との各段
階で位置決め停止するウエーハホルダを配設した
イオン注入装置において、 上記ウエーハホルダに、半導体ウエーハの受納
排出方向に穿設された細溝に遊嵌し、ウエーハホ
ルダの表面上に突出した押出棒及び前記押出棒を
前後動させる駆動源を具備したことを特徴とする
イオン注入装置。[Claim for Utility Model Registration] In a vacuum chamber for implanting ions into a semiconductor wafer, an upwardly inclined state in which the semiconductor wafer is received, a vertical state in which the ions are implanted, and a downwardly inclined state in which the ions are discharged to the outside of the vacuum chamber. In an ion implantation apparatus equipped with a wafer holder that positions and stops at each stage, the wafer holder is loosely fitted into a narrow groove drilled in the semiconductor wafer receiving and ejecting direction, and protrudes above the surface of the wafer holder. 1. An ion implantation device comprising: an extrusion rod; and a drive source for moving the extrusion rod back and forth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12480188U JPH0246361U (en) | 1988-09-24 | 1988-09-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12480188U JPH0246361U (en) | 1988-09-24 | 1988-09-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0246361U true JPH0246361U (en) | 1990-03-29 |
Family
ID=31374847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12480188U Pending JPH0246361U (en) | 1988-09-24 | 1988-09-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0246361U (en) |
-
1988
- 1988-09-24 JP JP12480188U patent/JPH0246361U/ja active Pending