JPH0246466A - Production of semiconductor device - Google Patents

Abstract

PURPOSE:To make it possible to sufficiently remove a residual resist by treating a photoresist with hydrofluoric acid after removing the photoresist used for a mask by an org. peeling method. CONSTITUTION:A photoresist film 2 is selectively formed on a semiconductor wafer 1, and then a treatment for forming a semiconductor element, such as etching, etc., is performed on the film 2. Next, the wafer 1 is etched with the hydrofluoric acid to remove the residual resist from the wafer 1 after removing an unwanted film 2 from the wafer by the org. peeling method. And, alternatively, the unwanted film 2 is peeled from the wafer by the org. peeling method, and then, the wafer is rinsed with an aqueous solution of hydrogen peroxide, followed by being treated the wafer with the hydrofluoric acid.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device including a photoresist removal step.

[Conventional technology]

Conventionally, photoresists are often used in the manufacture of semiconductor devices. One of the methods for removing the photoresist after using it as a mask is an organic stripping method.

In the organic stripping method, the semiconductor wafer on which photoresist is formed is first immersed in an organic stripper to remove the photoresist, then cleaned with a strip rinse agent, then cleaned with methyl ethyl ketone or isopropyl alcohol, and finally soaked in pure water. A process of washing with water is adopted.

[Problem to be solved by the invention]

However, the above-mentioned conventional organic stripping method has the disadvantage that photoresist re-adhesion and peeling residue occur due to repeated processing of semiconductor wafers. In recent years, the degree of integration of semiconductor devices has increased more and more, and semiconductor elements have become smaller. In addition, semiconductor devices such as two-dimensional CCDs that are extremely sensitive to contamination have appeared, and there is a problem in that the above-mentioned photoresist re-deposition or remaining peeling results in a serious decrease in yield.

[Means to solve the problem]

The method for manufacturing a semiconductor device of the present invention includes the steps of forming a photoresist pattern on a semiconductor wafer and performing a process for forming a semiconductor element, removing the photoresist by an organic peeling method after the completion of the process, and The method includes a step of etching the semiconductor wafer with a hydrofluoric acid solution to remove residual photoresist.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

FIGS. 1(a) to 1(c) are side views of a semiconductor wafer shown in the order of steps for explaining one embodiment of the present invention.

As shown in FIG. 1(a), semiconductor elements having various functions are formed on a semiconductor wafer 1 in a semiconductor manufacturing process (not shown). In order to form these semiconductor elements, a photoresist film 2 is selectively formed using a known photolithography technique.

Next, as shown in FIG. 1(b), processing is performed using various etching techniques for producing semiconductor elements. Next, in order to remove the photoresist film that is no longer needed, it is removed by a normal organic stripping method.

However, with this organic stripping method alone, the photoresist may not be completely removed or may be redeposited, leaving a photoresist residue 3.

Next, as shown in FIG. 1(c), the semiconductor wafer is etched in hydrofluoric acid for about 5 seconds. This completely removes photoresist residue.

Incidentally, after removing the photoresist using an organic peeling method, cleaning with hydrogen peroxide solution and then etching with hydrofluoric acid further enhances the photoresist removal effect.

〔Effect of the invention〕

As described above, according to the present invention, it is possible to completely remove photoresist, and semiconductor devices can be manufactured with high yield.

[Brief explanation of the drawing]

FIGS. 1(a) to 1(c) are side views of a semiconductor wafer shown in the order of steps for explaining one embodiment of the present invention. 1... Semiconductor wafer, 2... Photoresist film, 3
...Photoresist residue.

Claims (1)

[Claims] A step of forming a photoresist pattern on a semiconductor wafer and performing a process for forming a semiconductor element, a step of removing the photoresist by an organic peeling method after the completion of the process, and etching the semiconductor wafer with a hydrofluoric acid solution. A method of manufacturing a semiconductor device, comprising the step of: removing residual photoresist using a photoresist.