JPH0246726A - Improvement of degree of vacuum of vacuum apparatus - Google Patents
Improvement of degree of vacuum of vacuum apparatusInfo
- Publication number
- JPH0246726A JPH0246726A JP19722788A JP19722788A JPH0246726A JP H0246726 A JPH0246726 A JP H0246726A JP 19722788 A JP19722788 A JP 19722788A JP 19722788 A JP19722788 A JP 19722788A JP H0246726 A JPH0246726 A JP H0246726A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- gas
- degree
- molecules
- baking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は真空技術に用いられる真空装置の真空度改善方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for improving the degree of vacuum in a vacuum device used in vacuum technology.
[従来の技術]
従来、大気解故後の真空装置の真空度を上げるためには
、排気中の真空装置をヒータ等で数時間から数十時間加
熱するベーキング法が用いられている。また、ベーキン
グを行うことができない装置の場合には、真空排気した
まま長時間待つという方法がとられている。[Prior Art] Conventionally, in order to increase the degree of vacuum in a vacuum device after atmospheric decomposition, a baking method has been used in which the vacuum device during evacuation is heated with a heater or the like for several hours to several tens of hours. Furthermore, in the case of equipment that cannot be baked, a method is used in which the equipment is evacuated and waited for a long time.
[発明が解決しようとする課題]
しかしながら従来の方法によれば、ベーキングを行う装
置の場合、例えば真空装置の内壁に吸着しているト12
0等の分子を脱離させ、真空装置の真空度を上昇させる
には、真空装置全体を100°C以上の温度で数時間か
ら数十時間ベーキング覆る必要があった。ベーキング中
、およびベーキング後に装置温度が十分下るまでの間は
真空装置を使用することができないため、従来の方法に
よってベーキングを行った場合には十数時間から数十時
間の間、真空装置の使用が不可能となっていた。[Problems to be Solved by the Invention] However, according to the conventional method, in the case of a device that performs baking, for example, the toner 12 adsorbed on the inner wall of the vacuum device
In order to remove molecules such as 0 and increase the degree of vacuum in the vacuum apparatus, it was necessary to bake the entire vacuum apparatus at a temperature of 100° C. or higher for several hours to several tens of hours. Since vacuum equipment cannot be used during baking or until the equipment temperature has cooled sufficiently after baking, when baking is performed using conventional methods, vacuum equipment may not be used for dozens of hours. had become impossible.
一方、オーリングや光学ガラス窓を有するために高温で
のベーキングができない装置や、複数の真空室を持つ真
空装置の試料導入室などでベーキングを行わない真空装
置の場合には、真空度の改善が難しかった。また、ベー
キングができない装置の場合には真空排気したまま真空
度の上昇を待つが、これによる時間の損失も大きかった
。On the other hand, in the case of vacuum equipment that does not perform baking in the sample introduction chamber of a vacuum equipment that has multiple vacuum chambers, it is necessary to improve the degree of vacuum. was difficult. Furthermore, in the case of an apparatus that cannot be baked, the apparatus must be evacuated and wait for the degree of vacuum to rise, which results in a large loss of time.
本発明は以上述べたような従来の問題点を解決するため
になされたもので、従来よりも短時間で真空度を高める
ことができると共に、到達真空度をより高くすることの
可能な真空装置の真空度改善方法を提供することを目的
とする。The present invention has been made in order to solve the problems of the conventional art as described above, and provides a vacuum device that can increase the degree of vacuum in a shorter time than before, and can also achieve a higher degree of vacuum than before. The purpose of this invention is to provide a method for improving the degree of vacuum.
[課題を解決するための手段]
本発明は、真空装置内に02ガスまたは不活性ガスを供
給しながら排気し、次いでガス供給を止めて真空装置内
を排気することを特徴とする真空装置の真空度改善方法
、および上記工程の後、ざらに真空装置のベーキングを
行うことを特徴とする真空装置の真空度改善方法である
。[Means for Solving the Problems] The present invention provides a vacuum apparatus characterized in that the inside of the vacuum apparatus is evacuated while supplying 02 gas or an inert gas, and then the gas supply is stopped and the inside of the vacuum apparatus is evacuated. The present invention provides a method for improving the degree of vacuum in a vacuum device, and a method for improving the degree of vacuum in a vacuum device, which is characterized in that after the above steps, the vacuum device is roughly baked.
本発明における不活性ガスとしては、例えばN2ガスや
Arガス、Heガス等が挙げられる。Examples of the inert gas in the present invention include N2 gas, Ar gas, and He gas.
[作用]
第1の発明によれば、まず真空排気中の真空装置内に0
2ガスまたは不活性ガスを供給しながら排気する。この
時真空装置内壁に02ガス分子または不活性ガス分子が
衝突し、内壁を大気に曝した際に内壁面に吸着した82
0分子の脱離を促進させる。N20分子と置換して02
分子または不活性ガス分子が吸着・脱離吸着する場合も
ある。[Function] According to the first invention, first, there is no zero in the vacuum device during evacuation.
Exhaust while supplying 2 gas or inert gas. At this time, the 02 gas molecules or inert gas molecules collided with the inner wall of the vacuum device, and when the inner wall was exposed to the atmosphere, the 82 gas molecules adsorbed to the inner wall surface.
Promote the elimination of 0 molecules. 02 by replacing with N20 molecule
In some cases, molecules or inert gas molecules may be adsorbed, desorbed, or adsorbed.
すなわら不活性ガスや02によって真空装置内壁の脱水
を行っていることになる。次にガス供給を止めてtJ1
気すると、真空装置内壁に吸着している不活性ガスや0
2はト120に比べて脱離し易いため真空度は容易に上
昇し、高真空領域であれば本方法を用いない場合よりも
約1桁高い真空度が短時間で得られる。従って、ベーキ
ングを行わなくても、ある程度の高真空は短時間で達成
される。In other words, the inner wall of the vacuum device is dehydrated using inert gas or O2. Next, stop the gas supply and tJ1
If you do this, the inert gas or gas adsorbed on the inner wall of the vacuum device will be removed.
Since 2 is more easily desorbed than 120, the degree of vacuum can be easily increased, and in a high vacuum region, a degree of vacuum that is about one order of magnitude higher than when this method is not used can be obtained in a short time. Therefore, even without baking, a certain level of high vacuum can be achieved in a short time.
また第2の発明によれば、真空装置のベーキングの前に
、真空装置内に02ガスまたは不活性ガスを供給しなが
ら排気する。この時真空装置内壁に02ガス分子または
不活性ガス分子が衝突し、内壁を大気に曝した際に内壁
面に吸着したN20分子の脱離を促進させる。N20分
子と置換して02分子または不活性ガス分子が吸着・脱
離吸着する場合もある。次にガス供給を止めて排気する
と、真空装置内壁に吸着している不活性ガスや02はN
20に比べて脱離し易いため真空度は容易に上昇する。According to the second invention, before baking the vacuum device, the vacuum device is evacuated while being supplied with 02 gas or an inert gas. At this time, 02 gas molecules or inert gas molecules collide with the inner wall of the vacuum apparatus, promoting the desorption of N20 molecules adsorbed on the inner wall surface when the inner wall is exposed to the atmosphere. In some cases, 02 molecules or inert gas molecules are adsorbed/desorbed and adsorbed in place of N20 molecules. Next, when the gas supply is stopped and exhausted, the inert gas and 02 adsorbed on the inner wall of the vacuum device are removed by N.
Since it is easier to desorb than 20, the degree of vacuum can be easily increased.
この状態で真空装置のベーキングを行うと、上記の方法
をとらないでベーキングする場合よりも短時間のベーキ
ングでよりよい真空度を達成することができる。また、
真空装置内壁に吸着しているN20が少なくなっている
ため、ベーキングの温度を下げてもベーキングの効果が
得られる。If the vacuum device is baked in this state, a better degree of vacuum can be achieved in a shorter baking time than when baking is performed without using the above method. Also,
Since less N20 is adsorbed on the inner wall of the vacuum device, the baking effect can be obtained even if the baking temperature is lowered.
[実施例]
以下、本発明の一実施例を図面によって詳細に説明する
。[Example] Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第1図は本発明に係る方法を実施するだめの装置の一例
を示す概略構成図である。第1図において、真空装置の
真空室1には02ガス供給配管2およびN2ガス供給配
管3が配設され、真空室1は排気口4を通して真空排気
される。真空室1には真空装置の他の真空室につながる
ゲートバルブ5.6が設置されている。また真空室1の
側壁外周面に沿ってヒータ7が設けられている。FIG. 1 is a schematic diagram showing an example of an apparatus for carrying out the method according to the present invention. In FIG. 1, a vacuum chamber 1 of a vacuum apparatus is provided with an 02 gas supply pipe 2 and a N2 gas supply pipe 3, and the vacuum chamber 1 is evacuated through an exhaust port 4. The vacuum chamber 1 is equipped with a gate valve 5.6 that connects to other vacuum chambers of the vacuum apparatus. Further, a heater 7 is provided along the outer peripheral surface of the side wall of the vacuum chamber 1 .
次に、以上のように構成された装置を用いたベーキング
方法の第1の実施例について説明する。Next, a first embodiment of a baking method using the apparatus configured as described above will be described.
すなわら第1図に示すように、真空装置の真空排気に際
し、真空排気中の真空室1に02ガス供給配管2から0
2ガスを供給するか、またはN2ガス供給配管3からN
2ガスを供給する。数分間の後、ガスの供給を止め、真
空排気する。02ガスまたはN2ガスの供給により、真
空室1の内壁に02ガス分子8またはN2ガス分子9が
衝突し、内壁を大気に曝した際に内壁面に吸着したN2
0ガス分子10の脱離を促進させると共に、一部02ガ
ス分子8やN2ガス分子9がN20ガスと置換して吸着
する。このため、ガス供給停止後の真空排気によって、
ト12 0よりも脱離し易い02やN2が脱離し、真空
度は短時間で容易に上昇する。In other words, as shown in Fig. 1, when evacuating the vacuum device, the 02 gas supply pipe 2 is connected to the vacuum chamber 1 during evacuation.
2 gas, or from N2 gas supply pipe 3
2. Supply gas. After a few minutes, stop the gas supply and evacuate. Due to the supply of 02 gas or N2 gas, 02 gas molecules 8 or N2 gas molecules 9 collide with the inner wall of the vacuum chamber 1, and when the inner wall is exposed to the atmosphere, N2 adsorbed on the inner wall surface
While promoting the desorption of 0 gas molecules 10, some 02 gas molecules 8 and N2 gas molecules 9 are substituted with N20 gas and adsorbed. For this reason, by vacuum evacuation after stopping the gas supply,
O2 and N2, which are more easily desorbed than G120, are desorbed, and the degree of vacuum is easily increased in a short time.
次に本発明の第2の実施例について説明する。Next, a second embodiment of the present invention will be described.
すなわち第1図に示すように、真空装置のベーキングの
前に、真空排気中の真空室1に02ガス供給配管2から
02ガスを供給するか、またはN2ガス供給配管3から
N2ガスを供給する。数分間の後、ガスの供給を止め、
真空排気する。02ガスまたはN2ガスの供給により、
真空室−1の内壁に02ガス分子8またはN2ガス分子
9が衝突し、内壁を大気に曝した際に内壁面に吸着した
N20ガス分子10の脱離を促進させると共に、一部0
2ガス分子8やN2ガス分子9がN20ガス分子10と
置換して吸着する。このため、ガス供給停止後の真空排
気によって、真空室内壁に吸着している820分子の量
は減少し、また、N20よりも脱離し易い02やN2は
脱離し、真空度は短時間で上昇する。That is, as shown in FIG. 1, before baking the vacuum apparatus, 02 gas is supplied from 02 gas supply pipe 2 to vacuum chamber 1 during evacuation, or N2 gas is supplied from N2 gas supply pipe 3. . After a few minutes, turn off the gas supply and
Evacuate. By supplying 02 gas or N2 gas,
The 02 gas molecules 8 or the N2 gas molecules 9 collide with the inner wall of the vacuum chamber-1, promoting the desorption of the N20 gas molecules 10 adsorbed on the inner wall surface when the inner wall is exposed to the atmosphere, and some
2 gas molecules 8 and N2 gas molecules 9 replace and adsorb N20 gas molecules 10. Therefore, by evacuation after stopping the gas supply, the amount of 820 molecules adsorbed on the walls of the vacuum chamber decreases, and 02 and N2, which are more easily desorbed than N20, are desorbed, and the degree of vacuum increases in a short time. do.
次いで、この状態の真空室1をヒータ7によってベーキ
ングを行う。すでに内壁に吸着している1120分子は
減少し、吸着分子としては02またはN2が多くなって
いるため、低温・短時間のベーキングでも十分なベーキ
ングの効果が得られる。Next, the vacuum chamber 1 in this state is baked by the heater 7. Since the 1120 molecules already adsorbed on the inner wall are reduced and the adsorbed molecules are more 02 or N2, a sufficient baking effect can be obtained even by baking at a low temperature and for a short time.
これにより、所期の真空度の達成をより低温・短時間で
行うことができた。This made it possible to achieve the desired degree of vacuum at a lower temperature and in a shorter time.
第2図は本発明による方法を用いて真空装置の真空室を
真空排気した場合の真空度の時間変化を従来例と比較し
て示したものである。図中、(a)は何も処置を施さず
に排気した場合を示したもの、(b)は従来方法のベー
キングを行った場合を示したちのくこの場合、横軸の時
間はベーキング時間)、(C)は前記第1の実施例によ
って真空排気中に02ガスを流入・排気し、その後真空
排気した場合を示したもの、(d)は前記第2の実施例
を用いて、真空排気中に02ガスを流入・排気し、続い
てベーキングを施した場合をそれぞれ示したもの(この
場合も横軸の時間はベーキング時間)である。なお上記
実験例では02ガス流入時の真空度は10’Torrと
し、ベーキング温度はいずれも150℃とした。FIG. 2 shows the change over time in the degree of vacuum when a vacuum chamber of a vacuum apparatus is evacuated using the method according to the present invention, in comparison with a conventional example. In the figure, (a) shows the case of exhausting without any treatment, and (b) shows the case of baking using the conventional method. (In this case, the time on the horizontal axis is the baking time) , (C) shows the case where 02 gas is introduced and exhausted during evacuation according to the first embodiment, and then the evacuation is performed, and (d) shows the case where the evacuation is performed using the second embodiment. The graphs show the cases in which 02 gas was introduced and exhausted, and then baking was performed (also in this case, the time on the horizontal axis is the baking time). In the above experimental examples, the degree of vacuum when the 02 gas was introduced was 10'Torr, and the baking temperature was 150°C in both cases.
同図かられかるように、何も処置を施さずに排気した場
合の(a)に比べ、本発明の第1の方法を用いた(C)
では、ベーキングを行わないにも拘らず、短時間で真空
度の上昇が達成され、さらに到達真空度も上昇している
。また、従来方法のベーキングを行った場合の(b)に
比べ、本発明の第2の方法を用いた((f)では、真空
度の上昇が短時間で達成されている。なお、(d)の場
合のベーキング温度を120℃とした場合でも同様のデ
ータが得られた。As can be seen from the figure, (C) using the first method of the present invention is better than (A) when exhausting without any treatment.
In this case, even though baking was not performed, the degree of vacuum was increased in a short time, and the degree of vacuum reached was also increased. In addition, compared to (b) when baking is performed using the conventional method, the increase in the degree of vacuum is achieved in a shorter time in (f) using the second method of the present invention. ) Similar data were obtained when the baking temperature was set to 120°C.
第3図は本発明による方法を用いて真空室1を排気した
場合の真空室内残留ガスを質量分析法によって分析した
結果のうち、N20について従来例と比較して示したも
のである。 (a) 、 (b) 。FIG. 3 shows a comparison of N20 with a conventional example among the results of mass spectrometry analysis of the residual gas in the vacuum chamber 1 when the vacuum chamber 1 is evacuated using the method according to the present invention. (a), (b).
(C)および(d)はそれぞれ第2図(a) 、 (b
) 。(C) and (d) are respectively shown in Figure 2 (a) and (b).
).
(C)および(d)に対応する。なお各試料は(a)お
よび(C)については真空排気18時間経過後のものを
示し、(b)についてはベーキング温度150℃、ベー
キング時間18時間経過後のもの、(d)についてはベ
ーキング温度120’C、ベーキング時間8時間経過後
のものを示す。Corresponds to (C) and (d). For each sample, (a) and (C) are after 18 hours of vacuum evacuation, (b) is at a baking temperature of 150°C and after 18 hours of baking time, and (d) is at a baking temperature of 18 hours. The results are shown after 8 hours of baking at 120'C.
同図より、本発明の第1の実施例による場合は、何も処
置を施さずに真空排気した場合よりも残留82 ONが
少なく、また本発明の第2の実施例による場合はベーキ
ング温度が低温でかつベーキング時間が短いにも拘らず
、従来方法のベーキングを行った場合と同等の残留ト1
201となっていることがわかる。From the same figure, in the case of the first embodiment of the present invention, there is less residual 82 ON than in the case of vacuum evacuation without any treatment, and in the case of the second embodiment of the present invention, the baking temperature is lower. Despite the low temperature and short baking time, the residual amount is the same as when baking using conventional methods.
It can be seen that the number is 201.
[発明の効果]
以上詳細に述べたように、本発明によれば真空装置の真
空排気において、より短時間で真空度を高めることがで
き、またベーキングを行わなくても、またはベーキング
温度が低くても到達真空度をより高くすることができる
。従って本発明を、高温でのベーキングができない真空
装置や、より短時間での真空度上昇が必要な真空装置に
対して用いることにより、より高い真空を短時間で形成
することができ、さらにこの技術を真空を必要とする電
子デバイス製造技術に用いれば、作業効率の向上および
デバイス特性の向上に大きく寄与できる効果を有するも
のである。[Effects of the Invention] As described in detail above, according to the present invention, the degree of vacuum can be increased in a shorter time during evacuation of a vacuum device, and the degree of vacuum can be increased in a shorter time, and the baking temperature can be lowered without baking. The ultimate vacuum level can be made even higher. Therefore, by applying the present invention to vacuum equipment that cannot perform high-temperature baking or that needs to increase the degree of vacuum in a shorter time, it is possible to create a higher vacuum in a shorter time. If the technology is used in electronic device manufacturing technology that requires a vacuum, it will have the effect of greatly contributing to improving work efficiency and device characteristics.
第1図は本発明の方法に使用する装置の一例を示ta略
構成図、第2図は真空排気中の真空室内の真空度の時間
変化を従来例による場合と比較して示す図、第3図は真
空排気後の真空室内の残沼ト1201を質量分析によっ
て強度比較した図である。
1・・・真空室FIG. 1 is a schematic configuration diagram showing an example of an apparatus used in the method of the present invention, FIG. Figure 3 is a diagram comparing the intensities of the residue 1201 in the vacuum chamber after evacuation by mass spectrometry. 1...Vacuum chamber
Claims (2)
しながら排気し、次いでガス供給を止めて真空装置内を
排気することを特徴とする真空装置の真空度改善方法。(1) A method for improving the degree of vacuum in a vacuum device, which comprises evacuating the vacuum device while supplying O_2 gas or an inert gas, then stopping the gas supply and evacuating the inside of the vacuum device.
しながら排気し、次いでガス供給を止めて真空装置内を
排気した後、真空装置のベーキングを行うことを特徴と
する真空装置の真空度改善方法。(2) Vacuum degree of the vacuum device characterized by evacuating the vacuum device while supplying O_2 gas or inert gas, then stopping the gas supply and evacuating the inside of the vacuum device, and then baking the vacuum device. How to improve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19722788A JPH0246726A (en) | 1988-08-09 | 1988-08-09 | Improvement of degree of vacuum of vacuum apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19722788A JPH0246726A (en) | 1988-08-09 | 1988-08-09 | Improvement of degree of vacuum of vacuum apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0246726A true JPH0246726A (en) | 1990-02-16 |
Family
ID=16370955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19722788A Pending JPH0246726A (en) | 1988-08-09 | 1988-08-09 | Improvement of degree of vacuum of vacuum apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0246726A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05230624A (en) * | 1992-02-20 | 1993-09-07 | Fujitsu Ltd | Method for preventing generation of dust in internal jig of pvd device and internal jig treating apparatus |
| JP2010084211A (en) * | 2008-10-01 | 2010-04-15 | Ulvac Japan Ltd | Sputtering method |
| JP5433786B2 (en) * | 2010-06-10 | 2014-03-05 | 株式会社アルバック | Sputtering equipment production return method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61196538A (en) * | 1985-02-27 | 1986-08-30 | Hitachi Ltd | Vacuum processing and apparatus thereof |
-
1988
- 1988-08-09 JP JP19722788A patent/JPH0246726A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61196538A (en) * | 1985-02-27 | 1986-08-30 | Hitachi Ltd | Vacuum processing and apparatus thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05230624A (en) * | 1992-02-20 | 1993-09-07 | Fujitsu Ltd | Method for preventing generation of dust in internal jig of pvd device and internal jig treating apparatus |
| JP2010084211A (en) * | 2008-10-01 | 2010-04-15 | Ulvac Japan Ltd | Sputtering method |
| JP5433786B2 (en) * | 2010-06-10 | 2014-03-05 | 株式会社アルバック | Sputtering equipment production return method |
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