JPH0246764A - semiconductor equipment - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application J] The present invention relates to the structure and material composition of a non-fusible fixed storage device.

[Conventional technology]

Conventionally, non-fusible fixed storage devices have had a structure as shown in FIG. That is, an insulating film 22 made of SiO2 is formed on the surface of a semiconductor substrate 21 made of Sl, and a first electrode 23 made of a diffusion layer is formed through a window opened in the insulating film 22. A thin insulator 411 made of oxynitride (SiON) is formed on a part of the surface of the electrode 23.
1124, and a second electrode 25 is formed on the surface of the thin insulating film 24. The operation of the anti-fusing fixing device in this example is based on the first electrode 23 and the second electrode 25. A voltage is applied between the first electrode 23 and the second electrode 25, and the thin insulating film 24 is dielectrically broken down to bring the first electrode 23 and the second electrode 25 into a conductive state, resulting in a non-fusing fixed memory operation. It is.

[Problems to be Solved by the Invention] However, according to the above-mentioned conventional technology, as many transistors as possible are formed on a semiconductor substrate to increase the degree of integration, whereas it is difficult to form a non-melting fixed memory device on a semiconductor substrate. Therefore, there was a problem in that it was not suitable for improving the degree of integration of integrated circuits.

It is an object of the present invention to solve the problems of the prior art, to three-dimensionally arrange a non-meltable fixed storage device in a semiconductor integrated circuit device, and to improve the degree of integration of the semiconductor integrated circuit device.

[Means for Solving the Problems] In order to solve the above problems, the present invention relates to a non-melting fixed storage device, in which an insulating film is formed on a semiconductor substrate, and a first insulating film formed on the insulating film is provided. Either the surface or side surface of the electrode, or a portion of the surface and side surface, contains 5iOz, SiO and Si,
N4. The basic method is to form a thin insulating film made of Sin, Al2O5, 5itN4, Aλ20s, etc., and form the second electrode via the thin insulating film.

[Examples] Hereinafter, the present invention will be explained in detail with reference to Examples. Figures 1 and 2
The figure is a sectional view of a main part of a non-melting fixed storage device showing an embodiment of the present invention.

In FIG. 1, S
An insulating film 2 made of i Ot is formed, and a first electrode 3 made of polycrystalline Si, Ar1, W, WSi, etc. is formed on the surface of the insulating film 2, and then CVD5 i O is formed.

After further forming the glabellar insulating film 6 thereon, a part of the interlayer insulating film 11i6 above the first electrode 3 is opened, and CV
By D method or oxidation method, 5iO=, 5iON, 5isN4
, Afi, O, etc., and a second electrode 5 made of polycrystalline Si, A1, W, WSi, etc. is formed on the thin insulating film 4. Sho thin absolute, tlIII
4 is formed up to the side surface of the first electrode 3, and on top of that, the second electrode 3 is formed.
The electrode 5 may be formed extending to a part of the side surface of the first electrode 3, and in this case, the space insulating film 6 may not necessarily be provided.

In FIG. 2, the surface of the semiconductor substrate 1 made of Si has S
An insulating film 12 made of iO□ or the like is formed, and the insulating film 12
A first electrode 3 and a second electrode 5 made of polycrystalline Si, AA, W, WSi, etc. are formed on the surface of the first electrode 3.
and the second electrode 5 between at least the gap of 5iOa, 5
iON.

Thin insulating film 14 made of 5izN4, A1-Os, etc.
is formed by a CVD method or an oxidation method. Note that the thin insulating film 4 may be formed extending over the surfaces and side surfaces of the first electrode 3 and the second electrode 5.

[Effects of the Invention] The present invention has the effect that a non-fuse fixed memory device can be formed with a high degree of integration in a semiconductor integrated circuit device.

1 l, l　2、 l 3, l 4. 15° ・Semiconductor substrate ・Insulating film ・First electrode ・Thin insulation film ・Second electrode ・Interlayer insulation film that's all Applicant: Seiko Epson Corporation Agent: Patent attorney Homare Kamiyanagi (1 other person)

[Brief explanation of the drawing]

FIGS. 1 and 2 are sectional views of essential parts of a non-fusible permanent storage device showing an embodiment of the present invention, and FIG. 3 is a sectional view of essential parts of a conventional non-fusible permanent storage device.

Claims (3)

[Claims] (1) An insulating film is formed on the semiconductor substrate, and SiO_2, SiO_2 and Si_3N_4 are applied to either the surface or side surfaces, or a part of the surface and side surfaces, of the first electrode formed on the insulating film. , SiO_2N, Al_2O_3, Si_3N_4, Al_2O_3, etc., and a second electrode is formed through the thin insulating film. (2) The non-melting fixed memory device according to claim 1, wherein the first electrode or the first electrode and the second electrode are made of polycrystalline Si. (3) Connect the first electrode or the first electrode and the second electrode to A
2. The non-fusible fixed storage device according to claim 1, wherein the non-fusible fixed storage device is 1.