JPH0246866U - - Google Patents

Info

Publication number
JPH0246866U
JPH0246866U JP12587788U JP12587788U JPH0246866U JP H0246866 U JPH0246866 U JP H0246866U JP 12587788 U JP12587788 U JP 12587788U JP 12587788 U JP12587788 U JP 12587788U JP H0246866 U JPH0246866 U JP H0246866U
Authority
JP
Japan
Prior art keywords
quartz ampoule
growth
substrate
liquid phase
phase epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12587788U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12587788U priority Critical patent/JPH0246866U/ja
Publication of JPH0246866U publication Critical patent/JPH0246866U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図a,bは本考案にかかる石英アンプルの
実施例を示す図、第2図は本考案にかかる石英
アンプルの実施例を示す図、第3図は閉管方式
液相エピタキシヤル成長装置の概要図、第4図は
従来の石英アンプルを示す図、第5図は液相エピ
タキシヤル成長状態を示す図である。 図において、lは石英アンプルの中心軸線、p
は非対称な端面、1は石英アンプル、2は加熱反
応炉、3は被成長基板、4は基板ホルダー、5は
成長用メルト、11は外套管、12は基板固定治
具、22,32は基板固定治具(非対称な端面p
をもつた基板固定治具)、31は対向治具、を示
している。
Figures 1a and b are diagrams showing an embodiment of a quartz ampoule according to the present invention, Figure 2 is a diagram showing an embodiment of a quartz ampoule according to the invention, and Figure 3 is a diagram showing a closed tube type liquid phase epitaxial growth apparatus. A schematic diagram, FIG. 4 is a diagram showing a conventional quartz ampoule, and FIG. 5 is a diagram showing a state of liquid phase epitaxial growth. In the figure, l is the central axis of the quartz ampoule, p
1 is an asymmetric end surface, 1 is a quartz ampoule, 2 is a heating reactor, 3 is a growth substrate, 4 is a substrate holder, 5 is a growth melt, 11 is an outer tube, 12 is a substrate fixing jig, 22 and 32 are substrates Fixing jig (asymmetrical end surface p
(a substrate fixing jig having a board fixing jig), and 31 indicates an opposing jig.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 被成長基板3と成長用メルト5を封入した石英
アンプル1と該石英アンプル内の前記被成長基板
3を保持した基板固定治具12,22との接触端
面の少なくとも一方の端面pが前記石英アンプル
の中心軸線lに対して非対称形をなしていること
を特徴とする液相エピタキシヤル成長装置。
At least one end face p of the contact end faces between the quartz ampoule 1 containing the growth substrate 3 and the growth melt 5 and the substrate fixing jigs 12 and 22 holding the growth substrate 3 inside the quartz ampoule is connected to the quartz ampoule. A liquid phase epitaxial growth apparatus characterized by having an asymmetric shape with respect to a central axis l.
JP12587788U 1988-09-26 1988-09-26 Pending JPH0246866U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12587788U JPH0246866U (en) 1988-09-26 1988-09-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12587788U JPH0246866U (en) 1988-09-26 1988-09-26

Publications (1)

Publication Number Publication Date
JPH0246866U true JPH0246866U (en) 1990-03-30

Family

ID=31376872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12587788U Pending JPH0246866U (en) 1988-09-26 1988-09-26

Country Status (1)

Country Link
JP (1) JPH0246866U (en)

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