JPH0247089B2 - - Google Patents
Info
- Publication number
- JPH0247089B2 JPH0247089B2 JP59167313A JP16731384A JPH0247089B2 JP H0247089 B2 JPH0247089 B2 JP H0247089B2 JP 59167313 A JP59167313 A JP 59167313A JP 16731384 A JP16731384 A JP 16731384A JP H0247089 B2 JPH0247089 B2 JP H0247089B2
- Authority
- JP
- Japan
- Prior art keywords
- porcelain
- mol
- varistor
- strontium titanate
- strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 claims description 9
- 229910052573 porcelain Inorganic materials 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 7
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 125000005402 stannate group Chemical group 0.000 claims description 2
- 229940071182 stannate Drugs 0.000 claims 1
- 230000003068 static effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Description
(産業上の利用分野)
この発明は電圧非直線抵抗体用磁器組成物に関
し、特に抗析強度の大きいチタン酸ストロンチウ
ム系の電圧非直線抵抗体用磁器組成物に関する。
(従来技術)
チタン酸ストロンチウム系半導体磁器の結晶粒
界を高抵抗化することによつて電圧非直線抵抗体
(以下「バリスタ」と称する)が得られることが、
知られている。この種のバリスタの応用として
は、マイクロモータの火花吸収用のリングバリス
タがある。このリングバリスタは、通常、樹脂デ
イツプなどで外装せずそのままで装着されるた
め、抗析強度の大きなものが必要とされる。特に
マイクロモータなどに使用されるバリスタは小型
であるため、抗析強度の大きいことが重要な特性
として要求される。
(発明が解決しようとする問題点)
従来のチタン酸ストロンチウム系半導体磁器か
らなるバリスタは抗析強度が小さく、したがつて
肉厚を1mm前後にしなければならず、そのために
小型化が望まれるマイクロモータ用のバリスタと
して適当なものではなかつた。
それゆえに、この発明の主たる目的は、良好な
バリスタ特性を有しかつ抗析強度の大きなバリス
タ用磁器組成物を提供することである。
(問題点を解決するための手段)
この発明は、チタン酸ストロンチウム、または
チタン酸ストロンチウムを主体としてその他のチ
タン酸塩、ジルコン酸塩およびすず酸塩を含む、
主成分が98.80〜99.88モル%、Er2O3および
Ho2O3のうち少なくとも1種とTa2O5および
Nb2O5のうち少なくとも1種との合計が0.1〜1.0
モル%、MnO2が0.02〜0.2モル%からなり、磁器
の結晶粒が半導体で、かつその結晶粒界が高抵抗
化されている、電圧非直線抵抗体用磁器組成物で
ある。
(発明の効果)
この発明によれば、非直線係数(α)が7.5以
上でかつ抗析強度が2.5Kg以上の、優れたバリス
タ用磁器組成物が得られる。
この発明の上述の目的、その他の目的、特徴お
よび利点は、図面を参照して行なう以下の実施例
の詳細な説明から一層明らかとなろう。
(実施例)
主成分であるSrTiO3,CaTiO3,BaZrO3およ
びBaSnO3の各粉末と、半導体化剤であるEr2O3,
Ho2O3,Ta2O5およびNb2O5の各粉末とを、第1
表に示す組成比の磁器が得られるように、秤量
し、バインダを3〜10重量%加えてポリポツトで
約10時間湿式粉砕した。脱水した後、サラン篩50
メツシユで整粒し、外径13.5mm、内径8mmおよび
肉厚1.2mmのリング状に成形した。次いで、1100
℃で1時間予備焼成を行ない、引き続き窒素97
%、水素3%の還元雰囲気中において、1380℃で
2時間焼成した。焼成された磁器の外径は11mm、
内径は6.6mm、肉厚は1mmであつた。
さらに、リング状の磁器の片面に3個の銀電極
をギヤツプ1.5mmの間隔をおいて形成し、他面に
は全面に銀電極を形成し試料を作成した。このよ
うにして得られたバリスタは磁器の結晶粒が半導
体で、磁器の結晶粒界が高抵化されている。
得られた試料は定電流電源に接続し、1mAお
よび10mAのときの電圧値をそれぞれ測定した。
そのときの電圧値をそれぞれE1およびE10として
求めた。そして、しきい値電圧(Vth)は、E10
より求め、非直線係数(α)は次式により求め
た。
α=1/(logE10/E1)
また、抗析高度は、プツシユプルゲージを用
い、図面に示すように、試料Aの下面を支柱Bお
よびCで支持し、試料Aの上面から支柱Bおよび
Cのほぼ中間において刃先Dによつて、図面の矢
印方向に静荷重(W)を加え、試料Aが破壊する
ときの静荷重によつて表される。
測定結果については第1表に示した。なお、抗
析強度については試料が破壊する寸前の値を示し
ている。第1表中※印を付した試料はこの発明の
範囲外であり、それ以外は全てこの発明の範囲内
の試料である。
(Industrial Application Field) The present invention relates to a ceramic composition for a voltage non-linear resistor, and particularly to a strontium titanate-based ceramic composition for a voltage non-linear resistor having high anti-deposition strength. (Prior Art) It is known that a voltage nonlinear resistor (hereinafter referred to as "varistor") can be obtained by increasing the resistance of the grain boundaries of strontium titanate-based semiconductor ceramics.
Are known. An application of this type of varistor is a ring varistor for absorbing sparks in micro motors. This ring varistor is usually mounted as is without being covered with a resin dip or the like, so it is required to have high anti-destructive strength. In particular, varistors used in micro motors and the like are small, so high anti-destructive strength is required as an important characteristic. (Problems to be Solved by the Invention) Conventional varistors made of strontium titanate-based semiconductor ceramics have low anti-destructive strength, and therefore the wall thickness must be approximately 1 mm. It was not suitable as a varistor for a motor. Therefore, the main object of the present invention is to provide a porcelain composition for a varistor that has good varistor properties and a high anti-destructive strength. (Means for Solving the Problems) The present invention provides strontium titanate or strontium titanate containing other titanates, zirconates, and stannates.
The main components are 98.80-99.88 mol%, Er2O3 and
At least one of Ho 2 O 3 and Ta 2 O 5 and
The total of at least one of Nb 2 O 5 is 0.1 to 1.0
This is a ceramic composition for a voltage nonlinear resistor, in which MnO2 is 0.02 to 0.2 mol%, the crystal grains of the ceramic are semiconductor, and the crystal grain boundaries are made highly resistive. (Effects of the Invention) According to the present invention, an excellent porcelain composition for a varistor having a nonlinear coefficient (α) of 7.5 or more and a resistive strength of 2.5 Kg or more can be obtained. The above objects, other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings. (Example) Each powder of SrTiO 3 , CaTiO 3 , BaZrO 3 and BaSnO 3 which is the main component, and Er 2 O 3 which is a semiconducting agent,
Each powder of Ho 2 O 3 , Ta 2 O 5 and Nb 2 O 5 was
The mixture was weighed, 3 to 10% by weight of binder was added, and wet pulverized in a polypot for about 10 hours so as to obtain porcelain having the composition ratio shown in the table. After dehydrating, saran sieve 50
The particles were sized using a mesh and formed into a ring shape with an outer diameter of 13.5 mm, an inner diameter of 8 mm, and a wall thickness of 1.2 mm. Then 1100
Pre-calcined for 1 hour at ℃, followed by nitrogen 97
% and 3% hydrogen at 1380° C. for 2 hours. The outer diameter of fired porcelain is 11mm.
The inner diameter was 6.6 mm and the wall thickness was 1 mm. Furthermore, three silver electrodes were formed on one side of the ring-shaped porcelain with a gap of 1.5 mm, and a silver electrode was formed on the entire surface of the other side to prepare a sample. In the varistor obtained in this way, the crystal grains of the porcelain are semiconductors, and the crystal grain boundaries of the porcelain have a high resistance. The obtained sample was connected to a constant current power supply, and the voltage values at 1 mA and 10 mA were measured.
The voltage values at that time were determined as E1 and E10, respectively. And the threshold voltage (Vth) is E10
The nonlinear coefficient (α) was determined using the following formula. α=1/(logE10/E1) In addition, the anti-deposition height is determined using a push-pull gauge.As shown in the drawing, the lower surface of sample A is supported by supports B and C, and the upper surface of sample A is measured by supports B and C. A static load (W) is applied in the direction of the arrow in the drawing by the cutting edge D approximately in the middle of C, and the static load is expressed as the static load when sample A breaks. The measurement results are shown in Table 1. Note that the anti-destructive strength indicates a value on the verge of the sample breaking. The samples marked with * in Table 1 are outside the scope of this invention, and all other samples are within the scope of this invention.
【表】【table】
【表】
比較例
主成分であるSrTiO3、半導体化剤である
Y2O3,Nb2O5,WO3,La2O3などを第2表に示
す組成の磁器が得られるように秤量し、その後実
施例と同様に処理して試料を得た。
得られた試料について実施例と同様に、しきい
値電圧(Vth)、非直線係数(α)および抗析強
度(Kg)を測定し、その結果を第2表に示した。[Table] Comparative example Main component SrTiO 3 and semiconducting agent
Y 2 O 3 , Nb 2 O 5 , WO 3 , La 2 O 3 and the like were weighed so as to obtain porcelain having the composition shown in Table 2, and then treated in the same manner as in the Examples to obtain samples. The threshold voltage (Vth), nonlinear coefficient (α), and anti-deposition strength (Kg) of the obtained sample were measured in the same manner as in the examples, and the results are shown in Table 2.
【表】
第1表と第2表とを比較して明らかなように、
この発明のように、半導体化剤としてEr2O3,
H2O3のうち少なくとも1種とTa2O5,Nb2O5の
うち少なくとも1種とを含有させることによつ
て、しきい値電圧、非直線係数とも従来のものと
特性上遜色がなく、しかも抗析強度を20〜80%程
度改善することができた。[Table] As is clear from comparing Tables 1 and 2,
As in this invention, Er 2 O 3 ,
By containing at least one type of H 2 O 3 and at least one type of Ta 2 O 5 and Nb 2 O 5 , the threshold voltage and nonlinear coefficient are inferior to conventional ones in terms of characteristics. Moreover, we were able to improve the anti-destructive strength by about 20 to 80%.
図面は抗析強度を測定する方法を説明する概略
図解図である。
The drawing is a schematic diagram illustrating a method of measuring anti-resistance strength.
Claims (1)
トロンチウムを主体としてその他のチタン酸塩、
ジルコン酸塩およびすず酸塩を含む、主成分が
98.80〜99.88モル%、 Er2O3およびHo2O3のうち少なくとも1種と
Ta2O5およびNb2O5のうち少なくとも1種との合
計が0.1〜1.0モル%、 MnO2が0.02〜0.2モル%からなり、 磁器の結晶粒が半導体で、かつその結晶粒界が
高抵抗化されている、電圧非直線抵抗体用磁器組
成物。[Claims] 1. Strontium titanate, or other titanates based on strontium titanate,
The main components include zirconate and stannate.
98.80 to 99.88 mol%, with at least one of Er 2 O 3 and Ho 2 O 3
The total amount of at least one of Ta 2 O 5 and Nb 2 O 5 is 0.1 to 1.0 mol %, MnO 2 is 0.02 to 0.2 mol %, and the crystal grains of the porcelain are semiconductors and the grain boundaries are high. A ceramic composition for a voltage nonlinear resistor that is made into a resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59167313A JPS6144404A (en) | 1984-08-09 | 1984-08-09 | Porcelain composition for voltage nonlinear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59167313A JPS6144404A (en) | 1984-08-09 | 1984-08-09 | Porcelain composition for voltage nonlinear resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6144404A JPS6144404A (en) | 1986-03-04 |
| JPH0247089B2 true JPH0247089B2 (en) | 1990-10-18 |
Family
ID=15847430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59167313A Granted JPS6144404A (en) | 1984-08-09 | 1984-08-09 | Porcelain composition for voltage nonlinear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6144404A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12389580B2 (en) | 2019-09-20 | 2025-08-12 | Fuji Corporation | Storage |
-
1984
- 1984-08-09 JP JP59167313A patent/JPS6144404A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6144404A (en) | 1986-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0141241B2 (en) | ||
| JP3087644B2 (en) | Dielectric porcelain composition | |
| JPS6144404A (en) | Porcelain composition for voltage nonlinear resistor | |
| JP2513394B2 (en) | Porcelain composition | |
| JP3291748B2 (en) | Dielectric ceramic composition for temperature compensation | |
| JPH0717441B2 (en) | Porcelain composition | |
| JPH0815005B2 (en) | Dielectric porcelain composition | |
| JP2630156B2 (en) | Semiconductor porcelain composition and method for producing the same | |
| JPH0457632B2 (en) | ||
| JPH0566332B2 (en) | ||
| JPS63301410A (en) | Insulated grain boundary type semiconductor ceramic composition | |
| EP0208234A1 (en) | High permittivity ceramic composition | |
| JPS6325902A (en) | Porcelain compound for voltage nonlinear resistor | |
| JPH06104590B2 (en) | Porcelain composition | |
| JPH0459265B2 (en) | ||
| JPS6215801A (en) | Ceramic composition for voltage non-linear resistance body | |
| JPH051565B2 (en) | ||
| JPS6031793B2 (en) | dielectric porcelain composition | |
| JPS61271705A (en) | Ceramic composition | |
| JPH03109260A (en) | Grian boundary oxidized voltage-nonlinear resistance composition | |
| JPH0566331B2 (en) | ||
| JPH0566333B2 (en) | ||
| JPH06191935A (en) | Barium titanate-based semiconductor material | |
| JPH0529621B2 (en) | ||
| JPS637448B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |