JPH0248122B2 - - Google Patents
Info
- Publication number
- JPH0248122B2 JPH0248122B2 JP59082491A JP8249184A JPH0248122B2 JP H0248122 B2 JPH0248122 B2 JP H0248122B2 JP 59082491 A JP59082491 A JP 59082491A JP 8249184 A JP8249184 A JP 8249184A JP H0248122 B2 JPH0248122 B2 JP H0248122B2
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- voltage
- porcelain
- component
- rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 claims description 12
- 229910052573 porcelain Inorganic materials 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 2
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Description
〔産業上の利用分野〕
本発明は、電圧非直線指数の大きなバリスタ用
磁器組成物に関する。
〔従来技術〕
電子回路には、異常電圧の吸収やノイズの除去
等の目的でバリスタ素子が用いられている。従来
のバリスタ素子は、SrTiOを主成分とし、この他
多種の酸化物とから成る磁器組成物が使用されて
いる。例えば、直径5.1mm、厚さ0.8mmの上記磁器
の表面に対する一対の銀電極を設けて構成された
バリスタ素子では、バリスタ電圧(0.1mAの電流
を流すのに要する印加電圧をいう以下同じ)が15
〜40V、第2図で示すような波頭長8μs、波尾長
20μsのサージ電流を10秒間隔で5回流した後、常
温に一時間放置した時のバリスタ電圧V1の変化
率(以下単に「バリスタ電圧の変化率」という)
ΔV1が−0.3〜−0.8%電圧非直線指数αが13〜15
といつた特性をしており、静電容量Cは、30000
〜4000PFである。
本件発明者等は、バリスタ電圧の変化率V1を
大幅に変えることなく、従来のものに比べて静電
容量Cの小さなバリスタ素子が得られる磁器組成
物を昭和59年特許願第27675号において開示した。
その内容は、Sr1-xMgxTiO3(但し0.05≦x≦0.5)
を主成分とし、元素周期表のa族(La,Ce,
Pr,Nd,Sm,Eu,Dy,Y),a族(Nb,
Ta)またはa族(W)の酸化物で原子制御材
として作用する成分と、NaFとからなる磁器組
成物である。この磁器を用いて作られた上記と同
形のバリスタ素子では、バリスタ電圧V1が12〜
40V、同電圧の変化率ΔV1が−0.4〜−1.0%、電
圧非直線指数αが11.1〜13.9であり、これらの静
電容量Cは450〜2280PFであつた。しかし、広汎
な用途に対応するためさらに電圧非直線指数αが
得られる磁器組成物の開発が望まれている。
〔発明の目的〕
この発明は、従来のバリスタ磁器組成物では得
られなかつた電圧非直線指数αの大きなバリスタ
がその形状やその他の気特性を変えずに得られる
磁器組成物を提供することを目的とするものであ
る。
〔発明の構成〕
本発明による磁器組成物は、Sr1-xMgxTiO3
(但し、0.05≦x≦0.5)からなる成分(以下、第
一成分という)100モル部と、La2O3,CeO2,
Nd2O3,Y2O3,Pr6O11,Sm2O3,Eu2O3,
Dy2O3,Nb2O5,Ta2O5,WO3の内一種以上の成
分(以下、第二成分という)0.01〜3.00モル部
と、NaF(以下、第三成分という)0.01〜1.25モ
ル部と、Ag2O,CuO,Al2O3,SiO2,MnO2の内
一種以上からなる成分(以下、第四成分という)
0.01〜3.00モル部からなる磁器原料を焼結させた
ものである。
この場合に、上記第三成分は、第一、第二及び
第四成分と共に出発原料として用いずに、いわゆ
る熱拡散の手段によつて磁器中に含有させること
もできる。即ち、この第三成分を除く磁器原料を
成形、焼結させた後、得られた磁器の主面に第三
成分の粉末を載せ、これを800〜1300℃の温度で
処理することにより、同成分を磁器中に含ませる
ことができる。
なお、既に述べた通り、バリスタ素子は、板状
に成形した上記磁器組成物の両面に対向する一対
の電極を設けることにより構成される。
〔実施例〕
次ぎにこの実施例とその比較例と共に説明す
る。
実施例 1
最初に純度97.5%のSrCO3、MgCO3、TiO2を
それぞれ表1の割合で秤量し、これをボールミル
で10時間かけて混合した後、脱
[Industrial Field of Application] The present invention relates to a ceramic composition for varistors having a large voltage nonlinearity index. [Prior Art] Varistor elements are used in electronic circuits for purposes such as absorbing abnormal voltage and removing noise. Conventional varistor elements use ceramic compositions containing SrTiO as a main component and various other oxides. For example, in a varistor element configured by providing a pair of silver electrodes on the surface of the above-mentioned porcelain with a diameter of 5.1 mm and a thickness of 0.8 mm, the varistor voltage (the applied voltage required to flow a current of 0.1 mA, the same applies hereinafter) is 15
~40V, wavefront length 8μs, wavetail length as shown in Figure 2
Rate of change in varistor voltage V 1 when a 20μs surge current is applied five times at 10 second intervals and left at room temperature for one hour (hereinafter simply referred to as "rate of change in varistor voltage")
ΔV 1 is −0.3 to −0.8% Voltage nonlinear index α is 13 to 15
It has the following characteristics, and the capacitance C is 30000
~4000PF. In Patent Application No. 27675 filed in 1982, the inventors of the present invention disclosed a ceramic composition capable of obtaining a varistor element with a smaller capacitance C than that of conventional ones without significantly changing the rate of change V 1 of the varistor voltage. Disclosed.
Its contents are Sr 1-x Mg x TiO 3 (0.05≦x≦0.5)
The main component is group a of the periodic table of elements (La, Ce,
Pr, Nd, Sm, Eu, Dy, Y), group a (Nb,
This is a ceramic composition consisting of NaF and a component that acts as an atomic control material, which is an oxide of Ta) or group a (W). In a varistor element of the same shape as above made using this porcelain, the varistor voltage V 1 is 12~
40V, the rate of change ΔV 1 of the same voltage was −0.4 to −1.0%, the voltage nonlinearity index α was 11.1 to 13.9, and the capacitance C was 450 to 2280PF. However, in order to accommodate a wide range of uses, it is desired to develop a ceramic composition that can obtain a higher voltage nonlinearity index α. [Objective of the Invention] The present invention aims to provide a porcelain composition that allows a varistor with a large voltage nonlinearity index α, which could not be obtained with conventional varistor porcelain compositions, to be obtained without changing its shape or other mechanical properties. This is the purpose. [Structure of the invention] The porcelain composition according to the present invention has Sr 1-x Mg x TiO 3
(However, 0.05≦x≦0.5) (hereinafter referred to as the first component) and 100 mole parts of La 2 O 3 , CeO 2 ,
Nd 2 O 3 , Y 2 O 3 , Pr 6 O 11 , Sm 2 O 3 , Eu 2 O 3 ,
0.01 to 3.00 mole parts of one or more components among Dy 2 O 3 , Nb 2 O 5 , Ta 2 O 5 , and WO 3 (hereinafter referred to as the second component) and 0.01 to 1.25 mole parts of NaF (hereinafter referred to as the third component) A component consisting of a molar part and one or more of Ag 2 O, CuO, Al 2 O 3 , SiO 2 , MnO 2 (hereinafter referred to as the fourth component)
It is made by sintering porcelain raw material consisting of 0.01 to 3.00 mole parts. In this case, the third component may not be used as a starting material together with the first, second and fourth components, but may be incorporated into the porcelain by means of so-called thermal diffusion. That is, after molding and sintering the porcelain raw material excluding this third component, the powder of the third component is placed on the main surface of the obtained porcelain, and this is treated at a temperature of 800 to 1300°C. Components can be incorporated into the porcelain. As already mentioned, the varistor element is constructed by providing a pair of opposing electrodes on both sides of the above-mentioned ceramic composition formed into a plate shape. [Example] Next, this example and its comparative example will be explained. Example 1 First, SrCO 3 , MgCO 3 , and TiO 2 with a purity of 97.5% were each weighed in the proportions shown in Table 1, mixed in a ball mill for 10 hours, and then desorbed.
以上の通り本発明による磁器組成物を用いるこ
とにより、小型化された形状のまゝで、かつバリ
スタ電圧V1やその変化率ΔV1及び静電容量C等
の特性を大幅に変えずに電圧依存非直線指数αの
特に大きなバリスタ素子が得られるようになる。
これによつてより広汎な用途に対応できるように
なる。
As described above, by using the ceramic composition according to the present invention, the voltage can be increased without significantly changing the characteristics such as the varistor voltage V 1 , its rate of change ΔV 1 , and capacitance C while maintaining the compact size. A varistor element with a particularly large dependent nonlinearity index α is obtained.
This allows it to be used in a wider range of applications.
第1図は、本発明の実施例において試料のサー
ジ電流によるバリスタ電圧の変化率を測定する際
に使用した雷サージ許容度試験機を示す回路図、
第2図は、同試験装置において試料に流したサー
ジ電流の波形を示す図表である。
FIG. 1 is a circuit diagram showing a lightning surge tolerance tester used in measuring the rate of change in varistor voltage due to surge current of a sample in an embodiment of the present invention;
FIG. 2 is a chart showing the waveform of a surge current applied to a sample in the same test device.
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
Claims (1)
なる成分100モル部と、La2O3,CeO2,Nd2O3,
Y2O3,Pr6O11,Sm2O3,Eu2O3,Dy2O3,
Nb2O5,Ta2O5,WO3の内一種以上の成分0.01〜
3.00モル部と、NaF0.01〜1.25モル部と、Ag2O,
CuO,Al2O3,SiO2,MnO2の内一種以上の成分
0.01〜3.00モル部からなるものを焼結させてなる
ことを特徴とするバリスタ用磁器組成物。100 mole parts of a component consisting of 1 Sr 1-x Mg x TiO 3 (0.05≦x≦0.5) and La 2 O 3 , CeO 2 , Nd 2 O 3 ,
Y 2 O 3 , Pr 6 O 11 , Sm 2 O 3 , Eu 2 O 3 , Dy 2 O 3 ,
One or more components among Nb 2 O 5 , Ta 2 O 5 , WO 3 0.01~
3.00 mol parts, 0.01 to 1.25 mol parts of NaF, and Ag 2 O,
One or more components among CuO, Al 2 O 3 , SiO 2 , MnO 2
A porcelain composition for a varistor, characterized in that it is made by sintering a composition containing 0.01 to 3.00 mole parts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59082491A JPS60225401A (en) | 1984-04-24 | 1984-04-24 | Porcelain composition for varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59082491A JPS60225401A (en) | 1984-04-24 | 1984-04-24 | Porcelain composition for varistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60225401A JPS60225401A (en) | 1985-11-09 |
| JPH0248122B2 true JPH0248122B2 (en) | 1990-10-24 |
Family
ID=13775962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59082491A Granted JPS60225401A (en) | 1984-04-24 | 1984-04-24 | Porcelain composition for varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60225401A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6348802A (en) * | 1986-08-19 | 1988-03-01 | 松下電器産業株式会社 | Porcelain compound for voltage dependent nonlinear resistor |
-
1984
- 1984-04-24 JP JP59082491A patent/JPS60225401A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60225401A (en) | 1985-11-09 |
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