JPH0249049B2 - - Google Patents

Info

Publication number
JPH0249049B2
JPH0249049B2 JP59111792A JP11179284A JPH0249049B2 JP H0249049 B2 JPH0249049 B2 JP H0249049B2 JP 59111792 A JP59111792 A JP 59111792A JP 11179284 A JP11179284 A JP 11179284A JP H0249049 B2 JPH0249049 B2 JP H0249049B2
Authority
JP
Japan
Prior art keywords
voltage
power supply
circuit
output
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59111792A
Other languages
Japanese (ja)
Other versions
JPS60254904A (en
Inventor
Takashi Mitsuida
Akira Takei
Kyoshi Tashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59111792A priority Critical patent/JPS60254904A/en
Publication of JPS60254904A publication Critical patent/JPS60254904A/en
Publication of JPH0249049B2 publication Critical patent/JPH0249049B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Description

【発明の詳細な説明】 発明の技術分野 本発明は、MOSトランジスタをソースホロア
で用いたアナログアンプ回路に関する。
DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to an analog amplifier circuit using a MOS transistor as a source follower.

従来技術と問題点 ソースホロア回路は使用増幅素子がnチヤンネ
ルMOSトランジスタであるとそのドレインを電
源に、ソースを負荷抵抗を介してグランドに接続
し、ゲートに入力電圧を加え、ソースと負荷抵抗
との接点より出力電圧を取出す。ソースホロアは
利得は1以下であるがインピーダンス変換によく
用いられる。実用例の1つはCCD(電荷結合装
置)の出力部であり、その概要を第1図に示す。
Conventional technology and problems In the source follower circuit, when the amplifying element used is an n-channel MOS transistor, its drain is connected to the power supply, the source is connected to the ground via a load resistor, the input voltage is applied to the gate, and the source and load resistor are connected. Take out the output voltage from the contact. Although the source follower has a gain of 1 or less, it is often used for impedance conversion. One practical example is the output section of a CCD (charge coupled device), an outline of which is shown in Figure 1.

この図でTr1〜Tr7はnチヤネルMOSトランジ
スタで、Tr4〜Tr7が2段のソースホロアを構成
する。即ちTr4,Tr6のドレインは電VDDに接続さ
れ、ソースが負荷抵抗となるトランジスタTr5
Tr7のドレインに接続され、該Tr5,Tr7のソース
が電源(グランド)VSSに接続される。Tr1,Tr2
は負荷バイアス回路であり、トランジスタTr5
Tr7にこれらを適当な値の負荷抵抗とするための
ゲート電圧を供給する。ソースホロアを2段接続
すると利得は更に下るが、負荷容量などに対応す
べくCCDでは2段ものが用いられることが多い。
ダイオードのマークで示したものDはCCD(電荷
結合装置)の出力部で、トランジスタのソース、
ドレインと同様な拡散領域からなる。出力部Dは
トランジスタTr3を介して電源VDDへ接続される。
このトランジスタTr3Cはデイプリーシヨン型で
常時はカツトオフしており、リセツトクロツク
φRが入るとカツトオン(オン)になつて出力部
Dを電源VDDへ直結し(等価的に)、該出力部を
リセツトする。
In this figure, Tr 1 to Tr 7 are n-channel MOS transistors, and Tr 4 to Tr 7 constitute a two-stage source follower. That is, the drains of Tr 4 and Tr 6 are connected to the voltage V DD , and the sources of the transistors Tr 5 and Tr 6 are connected to the load resistance.
It is connected to the drain of Tr 7 , and the sources of Tr 5 and Tr 7 are connected to the power supply (ground) V SS . Tr 1 , Tr 2
is a load bias circuit, and transistors Tr 5 ,
Supply gate voltage to Tr 7 to set these as load resistances of appropriate values. If the source follower is connected in two stages, the gain will further decrease, but two stages are often used in CCDs to accommodate load capacitance.
D, indicated by the diode mark, is the output part of the CCD (charge-coupled device), which connects the source of the transistor,
It consists of a diffusion region similar to the drain. The output D is connected to the power supply V DD via the transistor Tr 3 .
This transistor Tr 3 C is a depletion type and is normally cut off. When the reset clock φ R is input, it becomes cut-on (on) and directly connects the output section D to the power supply V DD (equivalently), and Reset the output section.

第2図のbがリセツトロツクφRの波形を示し、
同図aが出力電圧Voutの波形を示す。第1図の
トランジスタTr3にリセツトクロツクφRが入ると
Tr3はオンになつてCCDの出力部Dの源VDDへ固
定され、トランジスタTr4,Tr5,TR6,TR7のオ
ン抵抗値に応じて分割され、出力電圧Voutが得
られる。リセツトクロツクφRが切れるとトラン
ジスタTr3のゲート・ソース間容量により出力部
Dの電位は若干下り、つれて出力電圧Voutも若
干下る。この部分QがDC(直流)基準ベルトとな
る。次にCCDの電荷(電子)転送されてきてそ
れが出力部Dに入ると、該出力部の電位は下る。
この部分Dの電位変化は流入電荷により定まり、
従つてQ−Rが信号電圧Vsgになる。信号電圧の
読取りは、部分Rが各々の中間部で該部分の電位
を読取り、基準レベルQとの差を求めることによ
り出力を得る。
b in Fig. 2 shows the waveform of the reset lock φR ,
Figure a shows the waveform of the output voltage Vout. When the reset clock φ R is input to the transistor Tr 3 in Fig. 1,
Tr 3 is turned on and fixed to the source V DD of the output section D of the CCD, and is divided according to the on-resistance values of transistors Tr 4 , Tr 5 , TR 6 , and TR 7 to obtain an output voltage Vout. When the reset clock φR is turned off, the potential of the output portion D drops slightly due to the gate-source capacitance of the transistor Tr3 , and the output voltage Vout also drops slightly. This portion Q becomes the DC (direct current) reference belt. Next, when the charges (electrons) of the CCD are transferred and enter the output section D, the potential of the output section decreases.
The potential change of this portion D is determined by the inflow charge,
Therefore, QR becomes the signal voltage Vsg. To read the signal voltage, the potential of the portion R is read at the middle of each portion, and the difference from the reference level Q is determined to obtain an output.

CCDが携用用テレビカメラなどに使用されて
いると電源は乾電池などとなり、該乾電池から昇
圧した後に給電する場合に電源電圧が変動しやす
い。電源電圧VDDが変動する出力電圧Voutは第2
図cに示すように全体が該電源電圧変動につれて
変動する。これでは部分Q、Rレベルも変動する
から、これをサンプリングして得た出力信号には
電源電圧変動が含まれ、不安定なものになる。
When a CCD is used in a portable television camera or the like, the power source is a dry battery or the like, and the power supply voltage is likely to fluctuate when power is supplied after boosting the voltage from the dry battery. The output voltage Vout where the power supply voltage V DD fluctuates is the second
As shown in Figure c, the whole changes as the power supply voltage fluctuates. In this case, since the partial Q and R levels also fluctuate, the output signal obtained by sampling them includes power supply voltage fluctuations and becomes unstable.

発明の目的 本発明はかゝる点を改善し、電源電圧変動の影
響を受けない安定な出力電圧を発生するようにし
ようとするものである。
OBJECTS OF THE INVENTION The present invention aims to improve these points and generate a stable output voltage that is not affected by power supply voltage fluctuations.

発明の構成 本発明は、ソースホロアに接続したMOSトラ
ンジスタ回路と、該回路の負荷抵抗となるMOS
トランジスタのゲートに、ゲートをドレインへ接
続した一対のMOSトランジスタで電源電圧を分
圧して得たバイアス電圧を加える負荷バイアス回
路を備えるMOSアナログアンプ回路において、
該負荷バイアス回路を構成する一対のMOSトラ
ンジスタの一方をデプリーシヨン型としかつ非飽
和領域で動作させて該負荷バイアス回路に、電源
電圧変動時に、ソースホロアの出力電圧が電源電
圧変動で変動しないように変動する電圧を出力さ
せるようにしてなることを特徴とするが、次に実
施例を参照しながらこれを説明する。
Structure of the Invention The present invention includes a MOS transistor circuit connected to a source follower, and a MOS transistor circuit that serves as a load resistance of the circuit.
In a MOS analog amplifier circuit equipped with a load bias circuit that applies a bias voltage obtained by dividing the power supply voltage to the gate of the transistor with a pair of MOS transistors whose gates are connected to their drains,
One of the pair of MOS transistors constituting the load bias circuit is made to be a depletion type and operated in a non-saturation region, so that the output voltage of the source follower fluctuates when the power supply voltage fluctuates so that the output voltage of the source follower does not fluctuate due to fluctuations in the power supply voltage. The present invention is characterized in that it outputs a voltage of 100%, and this will be explained next with reference to embodiments.

発明の実施例 本発明では第1図の負荷バイアス回路のトラン
ジスタTr2をデイプリーシヨン型にすると共に動
作点を非飽和領域(3極管領域)に選ぶ。従来回
路ではこのトランジスタTr2はエンハンスメント
型であり、動作点は飽和領域にある。負荷バイア
ス回路のトランジスタTr1は本発明回路および従
来回路ともにエンハンスメント型であり、ゲート
をドレインに接続して飽和領域で動作させる。
Embodiments of the Invention In the present invention, the transistor Tr 2 of the load bias circuit shown in FIG. 1 is of a depletion type, and the operating point is selected to be in the non-saturation region (triode region). In the conventional circuit, this transistor Tr 2 is of an enhancement type, and its operating point is in the saturation region. The transistor Tr 1 of the load bias circuit is of an enhancement type in both the circuit of the present invention and the conventional circuit, and the gate is connected to the drain to operate in the saturation region.

トランジスタTr1,Tr2は電源電圧VDDを分圧
し、接続点からその分圧電圧を出力して該分圧電
圧VbをトランジスタTr2,Tr5,Tr7のゲートへ
供給する。従来回路のようにトランジスタTr1
Tr2が共に飽和領域で動作すると該電圧Vbは電
源圧VDDの影響を余り受けず、ほゞ一定である。
そこで電源電圧VDDが例えば上昇すると、ソース
ホロア段の出力電圧Voutも上昇することになる。
これに対して本発明回路ではトランジスタTr2
非飽和3極管領域にあるから、電源電圧VDDが上
昇すると出力端Aの電圧Vbは上昇し、これによ
りトランジスタTr5,Tr7はゲート電圧が上昇し
て導通度を高め、つまり低抵抗となり、出力電圧
Voutは電源電圧VDDの上昇と共に上ることはしな
くなる。電圧VbはVDDの変化によるVoutの変化
を充分抑えるように変化するのが望ましく、これ
はトランジスタTr1,Tr2のW/L(ゲート巾/ゲ
ート長)などのサイズ、およびTr2の動作領域を
適切に選択することで実現できる。トランジスタ
Tr2のデプリーシヨン化は、該トランジスタのチ
ヤネル領域にP(リン)などの不純物を打ち込む
ことにより行なう。
The transistors Tr 1 and Tr 2 divide the power supply voltage V DD , output the divided voltage from the connection point, and supply the divided voltage Vb to the gates of the transistors Tr 2 , Tr 5 , and Tr 7 . As in the conventional circuit, the transistor Tr 1 ,
When both Tr 2 operate in the saturation region, the voltage Vb is not affected much by the power supply voltage V DD and remains substantially constant.
Therefore, when the power supply voltage V DD increases, for example, the output voltage Vout of the source follower stage also increases.
On the other hand, in the circuit of the present invention, since the transistor Tr 2 is in the unsaturated triode region, when the power supply voltage V DD increases, the voltage Vb at the output terminal A increases, and as a result, the gate voltage of the transistors Tr 5 and Tr 7 increases. increases, increasing the conductivity, i.e., lower resistance, and the output voltage
Vout no longer rises as the power supply voltage VDD rises. It is desirable that the voltage Vb changes to sufficiently suppress changes in Vout due to changes in V DD , and this depends on the size of transistors Tr 1 and Tr 2 such as W/L (gate width/gate length), and the operation of Tr 2 . This can be achieved by selecting the area appropriately. transistor
Depletion of Tr 2 is performed by implanting an impurity such as P (phosphorus) into the channel region of the transistor.

発明の効果 以上説明したように本発明ではソースホロアの
負荷抵抗となるMOSトランジスタのゲート電圧
をバイアス電圧回路により、電源電圧変化による
出力電圧変化を打ち消すように調整するので、電
源が乾電池のような電圧変動を生じ易いものであ
る場合にも安定な出力電圧が得られ、またこのた
めの手段は負荷バイアス回路のトランジスタの1
つをデイプリーシヨン型にし非飽和領域で動作さ
せるという簡単なものであるので、回路の複雑化
を招くことはないという利点が得られる。
Effects of the Invention As explained above, in the present invention, the gate voltage of the MOS transistor serving as the load resistance of the source follower is adjusted by the bias voltage circuit so as to cancel out the output voltage change due to the change in the power supply voltage. A stable output voltage can be obtained even when the output voltage is likely to fluctuate.
Since it is simple in that one is of depletion type and operates in a non-saturation region, there is an advantage that the circuit does not become complicated.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例を示す回路図、第2図
は動作説明図の波形図である。 図面で、Tr6,Tr7はソースホロアに接続した
MOSトランジスタ回路、Tr7は負荷抵抗となる
MOSトランジスタ、Tr1,Tr2は電源電圧を分圧
する負荷バイアス回路のトランジスタ、Tr2はそ
の一方のトランジスタである。
FIG. 1 is a circuit diagram showing an embodiment of the present invention, and FIG. 2 is a waveform diagram illustrating the operation. In the drawing, Tr 6 and Tr 7 are connected to the source follower.
MOS transistor circuit, Tr 7 becomes load resistance
The MOS transistors Tr 1 and Tr 2 are transistors of a load bias circuit that divides the power supply voltage, and Tr 2 is one of the transistors.

Claims (1)

【特許請求の範囲】 1 ソースホロアに接続したMOSトランジスタ
回路と、該回路の負荷抵抗となるMOSトランジ
スタのゲートに、ゲートをドレインへ接続した一
対のMOSトランジスタで電源電圧を分圧して得
たバイアス電圧を加える負荷バイアス回路を備え
るMOSアナログアンプ回路において、 該負荷バイアス回路を構成する一対のMOSト
ランジスタの一方をデプリーシヨン型としかつ非
飽和領域で動作させて該負荷バイアス回路に、電
源電圧変動時に、ソースホロアの出力電圧が電源
電圧変動で変動しないように変動する電圧を出力
させるようにしてなることを特徴とするMOSア
ナログアンプ回路。
[Claims] 1. A bias voltage obtained by dividing the power supply voltage between a MOS transistor circuit connected to a source follower, a pair of MOS transistors whose gates are connected to their drains, and a pair of MOS transistors whose gates are connected to their drains. In a MOS analog amplifier circuit equipped with a load bias circuit that adds A MOS analog amplifier circuit configured to output a voltage that fluctuates so that the output voltage of the circuit does not fluctuate due to fluctuations in the power supply voltage.
JP59111792A 1984-05-31 1984-05-31 Mos analog amplifier circuit Granted JPS60254904A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59111792A JPS60254904A (en) 1984-05-31 1984-05-31 Mos analog amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59111792A JPS60254904A (en) 1984-05-31 1984-05-31 Mos analog amplifier circuit

Publications (2)

Publication Number Publication Date
JPS60254904A JPS60254904A (en) 1985-12-16
JPH0249049B2 true JPH0249049B2 (en) 1990-10-29

Family

ID=14570265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59111792A Granted JPS60254904A (en) 1984-05-31 1984-05-31 Mos analog amplifier circuit

Country Status (1)

Country Link
JP (1) JPS60254904A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4571431B2 (en) 2004-04-30 2010-10-27 ルネサスエレクトロニクス株式会社 Signal amplification circuit
JP4575818B2 (en) 2005-03-24 2010-11-04 Okiセミコンダクタ株式会社 Bias circuit for amplifier circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5979301U (en) * 1982-11-22 1984-05-29 アイカ工業株式会社 Decorative plywood

Also Published As

Publication number Publication date
JPS60254904A (en) 1985-12-16

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