JPH025331A - Duopigatron ion source - Google Patents

Duopigatron ion source

Info

Publication number
JPH025331A
JPH025331A JP63155031A JP15503188A JPH025331A JP H025331 A JPH025331 A JP H025331A JP 63155031 A JP63155031 A JP 63155031A JP 15503188 A JP15503188 A JP 15503188A JP H025331 A JPH025331 A JP H025331A
Authority
JP
Japan
Prior art keywords
anode
intermediate electrode
electrode
cathode
orifice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63155031A
Other languages
Japanese (ja)
Other versions
JP2814084B2 (en
Inventor
Kenichi Takagi
憲一 高木
Yoshiaki Agawa
義昭 阿川
Hideo Tsuboi
秀夫 坪井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP63155031A priority Critical patent/JP2814084B2/en
Publication of JPH025331A publication Critical patent/JPH025331A/en
Application granted granted Critical
Publication of JP2814084B2 publication Critical patent/JP2814084B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To generate a large amount of polyvalent ions with a compact device by forming an enlongated hole in an intermediate electrode, and providing a reflecting electrode in front of an anode, and causing the intermediate electrode to be in a float state after discharge is generated. CONSTITUTION:An intermediate electrode 6 is provided between a cathode 3 and an anode 4 in an ion generating room 1, and a reflecting electrode 9, for absorbing magnetic lines of force from a magnet 8, is provided on the opposite side of the intermediate electrode 6 with respect to the anode 4. A thin hole 7 with a diameter (a) and a length (l) is provided in the intermediate electrode 6 coaxially with a orifice 5 provided in the anode 4. After He gas is introduced from an introduction opening 2 and plasma is generated, the intermediate electrode 6 is caused to be in a float state. The plasma generated in the vicinity of anode 4 is blocked by the thin hole 7 so that it does not diffuse towards the cathode 3, and is drawn out by strong magnetic force as a large amount of polyvalent ions. Thus the device can be formed in a compact form.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、主としてHe”+等の多価イオンを得るに適
したデュオビガトロン(DuoPIGatron)イオ
ン源に関する。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention mainly relates to a DuoPIGatron ion source suitable for obtaining multivalent ions such as He''+.

(従来の技術) 従来のイオン源として、例えば第1図示のようなHeそ
の他の放電ガスの導入口aを備えた真空のイオン発生室
す内にフィラメントからなるカソードCを設け、該カソ
ードCに対向してオリフィスdを有するアノードeを設
けると共に該カソードCとアノードeの中間に該オリフ
ィスdと同軸の細孔fを備えた中間電極gを設け、更に
該細孔fの軸線方向の磁界を形成する磁石りを設けるよ
うにしたものが知られている。これに於いて、該中間電
極gは、アノードeよりも低い電位とされ、該アノード
eへ軟鉄の磁路を介して接続し、オリフィスdの軸線方
向の強い磁界を中間電極gとアノードeとの間に作り、
カソードCとアノードeの間で生ずるプラズマを該中間
電極gの電位と該磁界とにより閉じ込め、該アノードe
の外方に設けた引出し電極iによりイオンを引き出す。
(Prior Art) As a conventional ion source, a cathode C made of a filament is provided in a vacuum ion generation chamber equipped with an inlet a for He or other discharge gas as shown in FIG. An anode e having an orifice d facing each other is provided, and an intermediate electrode g having a pore f coaxial with the orifice d is provided between the cathode C and the anode e, and a magnetic field in the axial direction of the pore f is provided. A device is known that is provided with a forming magnet. In this case, the intermediate electrode g is set at a lower potential than the anode e, and is connected to the anode e through a soft iron magnetic path, so that a strong magnetic field in the axial direction of the orifice d is applied between the intermediate electrode g and the anode e. Make between
The plasma generated between the cathode C and the anode e is confined by the potential of the intermediate electrode g and the magnetic field, and the anode e
Ions are extracted by an extraction electrode i provided on the outside of the ion.

(発明が解決しようとする課題) 前記従来のイオン源は比較的小型、コンパクトであるが
、これにより例えば)1e++のようなイオン化ポテン
シャルが54eVと高い多価イオンを多く発生させるこ
とは難しい。多価イオンを多く得るには放電電圧を大き
くしなければならずこれに伴って絶縁部材等が大型化す
るのでイオン源が大型になる不都合がある。
(Problems to be Solved by the Invention) The conventional ion source is relatively small and compact, but this makes it difficult to generate many multiply charged ions, such as 1e++, which have a high ionization potential of 54 eV. In order to obtain a large number of multivalent ions, the discharge voltage must be increased, and as a result, the size of the insulating member and the like increases, resulting in an inconvenience that the ion source becomes large.

本発明は、多価イオンを多量に得られる小型、コンパク
トなイオン源を提供することを目的とするものである。
An object of the present invention is to provide a small and compact ion source that can obtain a large amount of multivalent ions.

(課題を解決するための手段) 本発明では、Heその他の放電ガスが導入される真空の
イオン発生室内にカソードを設け、該カソードに対向し
てオリフィスを有するアノードを設けると共に該アノー
ドとカソードの中間に該オリフィスと同軸の細孔を備え
た中間電極を設け、更に該オリフィスの軸線方向の磁界
を形成する磁石を設けて該イオン発生室に発生するイオ
ンを該オリフィスを介して室外へと引出すようにしたも
のに於いて、該アノードの中間電極と反対側に前記磁石
の磁力線を吸収する反射電極を設け、該中間電極の細孔
を細く長く形成し、該イオン発生室内でプラズマ発生後
に該中間電極をフロート電位とすることにより、前記課
題を解決するようにした。
(Means for Solving the Problems) In the present invention, a cathode is provided in a vacuum ion generation chamber into which He or other discharge gas is introduced, and an anode having an orifice is provided opposite to the cathode. An intermediate electrode having a pore coaxial with the orifice is provided in the middle, and a magnet is further provided to form a magnetic field in the axial direction of the orifice to draw out ions generated in the ion generation chamber to the outside through the orifice. In this structure, a reflective electrode that absorbs the lines of magnetic force of the magnet is provided on the opposite side of the anode to the intermediate electrode, and the pores of the intermediate electrode are formed to be long and thin, so that the ion generation chamber can absorb the ions after plasma is generated. The above problem was solved by setting the intermediate electrode to a float potential.

(作 用) 真空のイオン発生室内に例えばHeガスを導入して1O
−2Torr程度の圧力とし、アノードのオリフィスの
軸線に沿って強い磁界例えば102〜2X 102ガウ
ス程度の磁界を磁石により与え、カソードを基準として
、アノードに70V、5A。
(Function) For example, He gas is introduced into the vacuum ion generation chamber to generate 1O
The pressure is about -2 Torr, and a strong magnetic field, for example, about 102 to 2 x 102 Gauss, is applied by a magnet along the axis of the orifice of the anode, and the anode is applied at 70 V and 5 A with the cathode as a reference.

中間電極1:l:20V、 0.025 A、引出し電
極1:20KVの電圧を与えて放電を行なう。この場合
、該カソードとアノード間の放電電圧は、通常のデュオ
プラズマトロンイオン源よりも多少高い程度であり、こ
れだけでは多量の多価イオンの発生は香られないが、中
間電極の細孔を細く長いものに形成すると共にアノード
の中間電極と反対側に磁石の磁力線を吸収する反射電極
を設けるようにし、更に該カソードとアノード間での放
電が点火したのち該中間電極への通電を断ってフロート
状態とすることによって多量の多価イオンが得られる。
A voltage of 20 V and 0.025 A is applied to the intermediate electrode 1:1, and a voltage of 20 KV is applied to the extraction electrode 1 to perform discharge. In this case, the discharge voltage between the cathode and anode is somewhat higher than that of a normal duoplasmatron ion source, and although this alone does not generate a large amount of multiply charged ions, it does not make the pores of the intermediate electrode narrower. The anode is formed to be long, and a reflective electrode is provided on the opposite side of the anode to the intermediate electrode to absorb the lines of magnetic force of the magnet.Furthermore, after the discharge between the cathode and the anode is ignited, the current to the intermediate electrode is cut off and the electrode floats. A large amount of multivalent ions can be obtained by forming this state.

これを更に説明すると、カソードとアノード間の放電に
よって生ずるプラズマは、その中間に細く長い細孔が介
在するため、該細孔の軸線方向に拡散移動し難く、しか
も中間電極がカソードよりも電位の低いフロート状態に
なるとより一層その拡散移動が防止され、該磁石により
前記軸線方向に発生する磁力線はアノードの前方の反射
電極によって吸収されるのでアノード付近の磁束密度が
高められ、これによって該アノード付近のプラズマ密度
、プラズマ温度が高まり、Ileガスは高いエネルギに
より電離されて多量のtle〜イオンが発生する。該■
e++イオンは前方の引出し電極の電位によりビーム状
に引き出され、例えばラザフオード後方散乱を利用した
表面分析装置に供される。
To explain this further, the plasma generated by the discharge between the cathode and the anode has a thin and long pore between them, so it is difficult to diffuse and move in the axial direction of the pore. When the float becomes low, its diffusion and movement is further prevented, and the lines of magnetic force generated in the axial direction by the magnet are absorbed by the reflective electrode in front of the anode, increasing the magnetic flux density near the anode, thereby increasing the magnetic flux density near the anode. As the plasma density and plasma temperature increase, the He gas is ionized by high energy and a large amount of Tle ions are generated. ■
The e++ ions are extracted in the form of a beam by the potential of the front extraction electrode, and are provided to a surface analysis device that utilizes Rutherford backscattering, for example.

(実施例) 本発明の実施例を第2図につき説明すると、同図に於い
て符号(1)はlleその他の放電ガスが導入口(2)
を介して導入される真空のイオン発生室、(3)は該イ
オン発生室(1)内に設けたフィラメントからなるカソ
ード、(4)は該カソード(3)に対向して設けたアノ
ードを示し、該アノード(4)にはオリフィス(5)が
形成される。(6)は該カソード(3)とアノード(4
)の中間に設けられた中間電極で、該中間電極(6)に
はオリフィス(5)の軸線と同軸に穴径aか細く絞られ
長さlの長い細孔〈7)が形成される。(8)は該オリ
フィス(5)の軸線方向の磁界を発生する磁石、(9)
は該アノード(4)の中間電極(6)と反対側に設けら
れた反射電極、l″IGは引出し電極で、反射電極(9
)及び引出し電極(′lGに前記オリフィス(5)の軸
線と合致したイオン引出口(11)421が夫々形成さ
れる。
(Embodiment) An embodiment of the present invention will be explained with reference to FIG.
(3) is a cathode made of a filament provided in the ion generation chamber (1), and (4) is an anode provided opposite to the cathode (3). , an orifice (5) is formed in the anode (4). (6) is the cathode (3) and anode (4).
), in which a long pore <7) with a diameter a and a length l is formed coaxially with the axis of the orifice (5). (8) is a magnet that generates a magnetic field in the axial direction of the orifice (5); (9)
is a reflective electrode provided on the opposite side of the intermediate electrode (6) of the anode (4), l''IG is an extraction electrode, and
) and an extraction electrode ('lG) are formed with an ion extraction port (11) 421 that coincides with the axis of the orifice (5), respectively.

その作動をIIo”+イオンのビームを発生させる場合
につき説明すると、イオン発生室(1)内を真空に排気
し、その内部へ導入口(2)からHeガスを導入して1
O−2Torrとしたのちカソード(3)を基窄として
、アノード(4)に80〜200 V、  1〜5 A
To explain its operation when generating a beam of IIo''+ ions, the inside of the ion generation chamber (1) is evacuated, and He gas is introduced into the chamber from the introduction port (2).
After setting it to O-2 Torr, the cathode (3) is set as the base, and the anode (4) is set to 80 to 200 V, 1 to 5 A.
.

反射電極(9)に〜Ov1引出し電極0vに25KVの
電圧を′jえ、磁石(8)によりオリフィス(5)の軸
線上で100〜200ガウスとなる磁界を与える。そし
てカソード(3)とアノード(4)の間で放電が点火す
ると中間電極(6)への通電を止めフロート状態とする
。該アノード(4)付近で発生するプラズマは中間電極
(6)の狭い細孔(1)に遮られてカソード(3)の方
向へ拡散することがなく、また中間電極(6)がフロー
ト状態となることによってプラズマはアノード(4)の
方向に押され、更に磁石(8)の磁力線は反射電極(9
)に吸収されるので比較的強い磁界がアノード(4)付
近に生ずる。これによれば該アノード(4)の付近のプ
ラズマ密度とプラズマ温度の高まりが得られ、高いプラ
ズマエネルギによりIleガスの電離を行なえるので多
量のIIe+″イオンをアノード(4)付近に発生させ
得る。発生したIlc″1イオンは引出し電極(′lv
の電位により前方へ引き出され、ラザフォード後方拡散
を利用した表面分析装置等に使用されるが、実施例に於
いては数10μAのHe+″イオン電流が得られ、従来
のデュオ・プラズマトロンイオン源よりも大幅に大量の
Ilc〜イオンが得られた。
A voltage of 25 KV is applied to the reflective electrode (9) to -Ov1 to the extraction electrode 0V, and a magnetic field of 100 to 200 Gauss is applied on the axis of the orifice (5) by the magnet (8). When a discharge is ignited between the cathode (3) and the anode (4), the supply of current to the intermediate electrode (6) is stopped and the intermediate electrode (6) is placed in a floating state. The plasma generated near the anode (4) is blocked by the narrow pores (1) of the intermediate electrode (6) and does not diffuse toward the cathode (3), and the intermediate electrode (6) is in a floating state. As a result, the plasma is pushed in the direction of the anode (4), and the magnetic field lines of the magnet (8) are pushed toward the reflective electrode (9).
), a relatively strong magnetic field is generated near the anode (4). According to this, it is possible to increase the plasma density and plasma temperature near the anode (4), and because the high plasma energy can ionize the He gas, a large amount of IIe+'' ions can be generated near the anode (4). The generated Ilc″1 ions are transferred to the extraction electrode (′lv
The He+'' ion source is drawn forward by a potential of A significantly larger amount of Ilc~ ions was also obtained.

(発明の効果) 以上のように本発明によるときは、中間電極の細孔を細
く長く形成し、アノードの前方に反射電極を設け、放電
発生後に中間電極をフロート状態としたので、アノード
付近のプラズマの密度と温度が高まり、ガスを多価イオ
ンに電離させるに、充分なプラズマエネルギが得られ、
多量の多価イオンを発生出来、その寸法も従来のディオ
プラズマトロンイオン源とさして変りがなく小型、コン
パクトに構成出来て使用上便利である等の効果がある。
(Effects of the Invention) As described above, according to the present invention, the pores of the intermediate electrode are formed long and thin, the reflective electrode is provided in front of the anode, and the intermediate electrode is floated after discharge occurs, so that the pores near the anode are The density and temperature of the plasma increases, and sufficient plasma energy is available to ionize the gas into multiply charged ions.
It can generate a large amount of multiply charged ions, its dimensions are not much different from conventional dioplasmatron ion sources, and it has advantages such as being small and compact, making it convenient to use.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のディオプラズマトロンイオン源の断面図
、第2図は本発明の実施例の断面図を示す。 (1)・・・イオン発生室  (3)・・・カソード(
4)・・・アノード    (5)・・・オリフィス(
6)・・・中間電極 (8)・・・磁 石 冊・・・引出し電極 (7)・・・細 孔 (9)・・・反射電極 許  出 願  人 口本真空技術株式会社
FIG. 1 shows a cross-sectional view of a conventional dioplasmatron ion source, and FIG. 2 shows a cross-sectional view of an embodiment of the present invention. (1)...Ion generation chamber (3)...Cathode (
4)... Anode (5)... Orifice (
6)...Intermediate electrode (8)...Magnet book...Extractor electrode (7)...Small hole (9)...Reflecting electrode Permit Application Published by Keihon Vacuum Technology Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] Heその他の放電ガスが導入される真空のイオン発生室
内にカソードを設け、該カソードに対向してオリフィス
を有するアノードを設けると共に該アノードとカソード
の中間に該オリフィスと同軸の細孔を備えた中間電極を
設け、更に該オリフィスの軸線方向の磁界を形成する磁
石を設けて該イオン発生室に発生するイオンを該オリフ
ィスを介して室外へと引出すようにしたものに於いて、
該アノードの中間電極と反対側に前記磁石の磁力線を吸
収する反射電極を設け、該中間電極の細孔を細く長く形
成し、該イオン発生室内でプラズマ発生後に該中間電極
をフロート電位とすることを特徴とするデュオピガトロ
ンイオン源。
A cathode is provided in a vacuum ion generation chamber into which a discharge gas such as He is introduced, an anode having an orifice is provided opposite to the cathode, and a pore coaxial with the orifice is provided between the anode and the cathode. An electrode is provided, and a magnet is further provided to form a magnetic field in the axial direction of the orifice, so that ions generated in the ion generation chamber are drawn out through the orifice,
A reflective electrode that absorbs the lines of magnetic force of the magnet is provided on the side opposite to the intermediate electrode of the anode, the pores of the intermediate electrode are formed long and thin, and the intermediate electrode is set at a float potential after plasma is generated in the ion generation chamber. Duopigatron ion source featuring:
JP63155031A 1988-06-24 1988-06-24 Duopigatron ion source Expired - Lifetime JP2814084B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63155031A JP2814084B2 (en) 1988-06-24 1988-06-24 Duopigatron ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63155031A JP2814084B2 (en) 1988-06-24 1988-06-24 Duopigatron ion source

Publications (2)

Publication Number Publication Date
JPH025331A true JPH025331A (en) 1990-01-10
JP2814084B2 JP2814084B2 (en) 1998-10-22

Family

ID=15597159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63155031A Expired - Lifetime JP2814084B2 (en) 1988-06-24 1988-06-24 Duopigatron ion source

Country Status (1)

Country Link
JP (1) JP2814084B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013196985A (en) * 2012-03-22 2013-09-30 Sen Corp Ion source device and ion beam generation method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013196985A (en) * 2012-03-22 2013-09-30 Sen Corp Ion source device and ion beam generation method
US9153405B2 (en) 2012-03-22 2015-10-06 Sen Corporation Ion source device and ion beam generating method

Also Published As

Publication number Publication date
JP2814084B2 (en) 1998-10-22

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