JPH0254237U - - Google Patents
Info
- Publication number
- JPH0254237U JPH0254237U JP13416588U JP13416588U JPH0254237U JP H0254237 U JPH0254237 U JP H0254237U JP 13416588 U JP13416588 U JP 13416588U JP 13416588 U JP13416588 U JP 13416588U JP H0254237 U JPH0254237 U JP H0254237U
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- semiconductor wafer
- field oxide
- wafer
- flatten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Description
第１図イ，ロは本考案の半導体ウエーハの製造
例を説明する工程断面図、第２図は本考案の一実
施例の半導体装置の断面図、第３図はＭＯＳＦＥ
Ｔの概念図、第４図は従来のＭＯＳＦＥＴの一具
体例を示す側断面図、第５図イ，ロ，ハは従来の
半導体ウエーハのロコス形成を例示する断面図で
ある。
１０……フイールド酸化膜、２０……半導体ウ
エーハ。
1A and 1B are process cross-sectional views explaining an example of manufacturing a semiconductor wafer according to the present invention, FIG. 2 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention, and FIG. 3 is a MOSFE
4 is a side sectional view showing a specific example of a conventional MOSFET, and FIGS. 5A, 5B, and 5C are sectional views illustrating conventional LOCOS formation on a semiconductor wafer. 10... Field oxide film, 20... Semiconductor wafer.
Claims (1)
を具えた半導体ウエーハにおいて、 上記フイールド酸化膜を表面研磨してウエーハ
表面を平坦化したことを特徴とする半導体ウエー
ハ。 (2) 上記半導体ウエーハを用いて製造された半
導体装置。[Claims for Utility Model Registration] (1) A semiconductor wafer comprising a field oxide film for insulation isolation of a LOCOS structure, characterized in that the field oxide film is surface-polished to flatten the wafer surface. (2) A semiconductor device manufactured using the above semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13416588U JPH0254237U (en) | 1988-10-13 | 1988-10-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13416588U JPH0254237U (en) | 1988-10-13 | 1988-10-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0254237U true JPH0254237U (en) | 1990-04-19 |
Family
ID=31392674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13416588U Pending JPH0254237U (en) | 1988-10-13 | 1988-10-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0254237U (en) |
-
1988
- 1988-10-13 JP JP13416588U patent/JPH0254237U/ja active Pending