JPH0254760A - Manufacture of target - Google Patents
Manufacture of targetInfo
- Publication number
- JPH0254760A JPH0254760A JP20607988A JP20607988A JPH0254760A JP H0254760 A JPH0254760 A JP H0254760A JP 20607988 A JP20607988 A JP 20607988A JP 20607988 A JP20607988 A JP 20607988A JP H0254760 A JPH0254760 A JP H0254760A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- target
- alloy
- powders
- mixing container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000843 powder Substances 0.000 claims abstract description 54
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 31
- 239000000956 alloy Substances 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002131 composite material Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000002844 melting Methods 0.000 claims abstract description 18
- 230000008018 melting Effects 0.000 claims abstract description 18
- 238000002156 mixing Methods 0.000 claims abstract description 14
- 239000000919 ceramic Substances 0.000 claims abstract description 12
- 230000005484 gravity Effects 0.000 claims abstract description 11
- 150000002739 metals Chemical class 0.000 claims abstract description 9
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 238000000465 moulding Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 26
- 229910052721 tungsten Inorganic materials 0.000 abstract description 3
- 229910052726 zirconium Inorganic materials 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000004663 powder metallurgy Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000001513 hot isostatic pressing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004453 electron probe microanalysis Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000005551 mechanical alloying Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001017 Alperm Inorganic materials 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- JLQFVGYYVXALAG-CFEVTAHFSA-N yasmin 28 Chemical compound OC1=CC=C2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1.C([C@]12[C@H]3C[C@H]3[C@H]3[C@H]4[C@@H]([C@]5(CCC(=O)C=C5[C@@H]5C[C@@H]54)C)CC[C@@]31C)CC(=O)O2 JLQFVGYYVXALAG-CFEVTAHFSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、比重あるいば溶融温度の差のために均一に混
合しにくい２以上の金属を混合した後、成形、焼結する
合金ターゲットの製造方法と、金属あるいは合金とセラ
ミックスとを混合した後、成形、焼結するターゲットの
製造方法とに関する。Detailed Description of the Invention "Field of Industrial Application" The present invention is an alloy target that is formed and sintered after mixing two or more metals that are difficult to mix uniformly due to differences in specific gravity or melting temperature. The present invention relates to a method for manufacturing a target, and a method for manufacturing a target in which a metal or an alloy and a ceramic are mixed, then molded and sintered.
「従来の技術」
従来知られている一般的な合金ターゲットの製造方法に
は、設計組成の合金を溶融し１組成を均一に混合した後
、所定の形状の容器に注入して凝固せしめる溶解法があ
る。``Prior art'' Conventionally known methods for producing general alloy targets include a melting method in which an alloy with a designed composition is melted, one composition is uniformly mixed, and the mixture is poured into a container of a predetermined shape and solidified. There is.
合金ターゲットを溶解法で製造する場合、その適用の基
本的条件として設計合金組成が溶融温度で均一に混合し
、溶融容器を侵食せず、凝固過程で組成の偏りを生じず
、亀裂を生じることなく所定の形状に凝固出来ることが
必要であり、それらが困難な場合は、粉末冶金法により
ターゲットを製造している。When producing an alloy target by melting, the basic conditions for its application are that the designed alloy composition mixes uniformly at the melting temperature, does not corrode the melting vessel, does not cause compositional imbalance during the solidification process, and does not form cracks. It is necessary that the target can be solidified into a predetermined shape without any problems, and if this is difficult, the target is manufactured using powder metallurgy.
粉末冶金法でターゲットを製造するときは、設計組成の
合金を粉砕し、あるいは設計組成に各組成成分粉末を混
合し、所定の形状に成形して焼結している。When manufacturing a target using a powder metallurgy method, an alloy having a designed composition is pulverized, or powders of each component are mixed into the designed composition, and the mixture is formed into a predetermined shape and sintered.
「発明が解決しようとする課題」
設計組成の金属の比重が異なる場合、例えばＡＩ−ｐｂ
が均一に混合したターゲットを溶解法で製造する場合、
Ａｌ−Ｐｂ系は溶解温度は高くないが、溶解温度でＡＩ
およびｐｂは全く分離して存在し、ＩＭ固湯温度はそれ
ぞれの比重が大きく異なるため、それぞれが全く分離し
て凝固してしまい、望みのターゲット得ることができな
い。"Problem to be solved by the invention" When the specific gravity of the metals in the design composition is different, for example, AI-pb
When manufacturing a target with a uniform mixture of
Although the melting temperature of the Al-Pb system is not high, it is
and pb exist completely separately, and since the specific gravity of each IM solid water temperature is greatly different, each of them completely separates and solidifies, making it impossible to obtain the desired target.
又、Ｆｅ−Ａｌ−９ｉ（例えばセンダスト合金）が均一
に混合したターゲットを溶解法で製造したい場合、均一
混合融液は容易に得られるが、凝固過程で熱応力のため
亀裂を発生し、大型のターゲットを得ることは困難であ
る。In addition, if you want to manufacture a target with a uniform mixture of Fe-Al-9i (e.g. sendust alloy) by the melting method, a uniformly mixed melt can be easily obtained, but cracks will occur due to thermal stress during the solidification process, resulting in large target is difficult to obtain.
さらにＦｅ−ＡＩ（例えばアルパーム合金）が均一に混
合したターゲットを溶解法で製造したい場合、Ｆｅおよ
びＡＩはそれぞれ容易に溶融出来るが、Ｆｅ−Ａｌを同
時に溶融する場合、それぞれの溶融温度が大きく異なる
ため、ＡＩが溶融し、次いでＦｅが溶融するまでにＡＩ
は蒸発滅失し設計組成と異なってしまう。Furthermore, if you want to manufacture a target with a uniform mixture of Fe-AI (e.g. Alperm alloy) by melting, Fe and AI can be easily melted individually, but when Fe-Al is melted at the same time, the melting temperatures of each are significantly different. Therefore, by the time AI melts and then Fe melts, AI
will be evaporated and the composition will differ from the designed composition.
その他Ｗ２Ｚｒ合金ターゲットを溶解法で製造する場合
、この合金の溶融点は３，０００℃で全率に固溶する溶
融体を形成するが、一般に広く使われるアルミするつぼ
を用いた高周波溶解路では溶解することは出来ず、例え
ば水冷銅るつぼ中で溶解するプラズマ溶解炉が必要であ
る。また本合金は、エアハンマーなどによる熱間加工は
困難なので、最初から所定の形状に近い、いわゆるニア
ネットシェープに鋳造し、大気中で加熱して槌打加工す
る。しかし、例えばプラズマ溶解炉により直径が２００
■、厚みがｌｏｖｗのターゲットを製造する場合このサ
イズの水冷銅るつぼ中に鋳造凝固することはきわめて困
難である。When manufacturing other W2Zr alloy targets by the melting method, the melting point of this alloy is 3,000°C, and a completely solid melt is formed. It cannot be melted and requires a plasma melting furnace, for example melting in a water-cooled copper crucible. Furthermore, since it is difficult to hot-work this alloy using an air hammer or the like, it is first cast into a so-called near-net shape, which is close to a predetermined shape, and then heated and hammered in the atmosphere. However, for example, in a plasma melting furnace, the diameter is 200 mm.
(2) When manufacturing a target with a thickness of lovw, it is extremely difficult to cast and solidify it in a water-cooled copper crucible of this size.
一方、＾１−Ｐｂ、 Ｆｅ−Ａ１． Ｗ２ Ｚｒ等の合
金ターゲットを粉末冶金法で製造しようとしても、各合
金の両成分の比重差が大きく、両成分粉末を均一に混合
することが難しい。そして、均一に混合されたとしても
成形過程で重いＰｂ、 ＦｅあるいはＷが下方に沈降し
、焼結後のターゲットにおいて組成比が均一な組成物と
することが困難である。On the other hand, ^1-Pb, Fe-A1. Even if an alloy target such as W2Zr is manufactured by a powder metallurgy method, the difference in specific gravity between the two components of each alloy is large, making it difficult to uniformly mix the powders of both components. Even if they are mixed uniformly, heavy Pb, Fe, or W will settle downward during the molding process, making it difficult to form a composition with a uniform composition ratio in the target after sintering.
また金属あるいは合金粉末とセラミック粉末とを粉末冶
金法で製造すると、両粉末に比重の大きな差があるため
に、均一に混合することができず両成分が均一に混合し
たターゲットを得ることが難しい。Furthermore, when metal or alloy powder and ceramic powder are manufactured using powder metallurgy, there is a large difference in specific gravity between the two powders, making it difficult to mix them uniformly and making it difficult to obtain a target in which both components are mixed uniformly. .
そこで本発明は、合金の各成分粉末、金属あるいは合金
粉末とセラミック粉末とを圧接させて両粉末を強く結合
させた後、成形、焼結することにより、両成分が均一に
混合したターゲットを得ることを目的とする。Therefore, in the present invention, a target in which both components are uniformly mixed is obtained by press-welding each component powder of an alloy, a metal or an alloy powder, and a ceramic powder to strongly bond the two powders, and then molding and sintering the powder. The purpose is to
「課題を解決するための手段」
本発明は、組成金属の比重差あるいは溶融温度差のため
均一に混合しにくい合金のターゲット製造方法において
、少なくとも２種以上の金属粉末とボールとを混合容器
に入れ、混合容器内を不活性ガス雰囲気又は真空にして
混合容器を回転させることにより各金属粉末を局部圧接
させ、得られた複合粉末を成形、焼結することを特徴と
する。``Means for Solving the Problems'' The present invention provides a method for producing targets for alloys that are difficult to mix uniformly due to differences in specific gravity or melting temperature of constituent metals, in which at least two or more metal powders and balls are placed in a mixing container. The method is characterized in that the metal powders are locally pressed into contact with each other by creating an inert gas atmosphere or a vacuum inside the mixing container and rotating the mixing container, and the resulting composite powder is molded and sintered.
他の発明は、金属あるいは合金とセラミ−／クスとの複
合組成よりなるターゲットの製造方法において、両成分
の粉末を前記発明と同様に混合して複合粉末とし、その
後、成形、焼結することを特徴とする。Another invention is a method for manufacturing a target made of a composite composition of metal or alloy and ceramic/glucose, in which powders of both components are mixed to form a composite powder in the same manner as in the above invention, and then molded and sintered. It is characterized by
「作用」
ターゲット成分の粉末とボールとを混合容器に入れて回
転させたとき、両成分の粉末はボールにはさみ込まれて
強く局部圧接された状態となり均一に混合される。よっ
て、その後、成形、焼結する場合に両成分の比重の差が
大きくても、両成分が均一に混合したターゲットを得る
ことができる。"Operation" When the powder of the target component and the ball are placed in a mixing container and rotated, the powder of both components is sandwiched between the balls and brought into strong local pressure contact, so that they are uniformly mixed. Therefore, even if the difference in specific gravity between the two components is large during subsequent molding and sintering, a target in which both components are uniformly mixed can be obtained.
「実施例１」
比重に大きな差のあるＷとＺｒとの合金ターゲットを、
本発明の製造方法により以下の通り製造した。"Example 1" An alloy target of W and Zr with a large difference in specific gravity was
It was manufactured as follows using the manufacturing method of the present invention.
４０メツシユのＷ粉末８０ｗｔ％と２００メツシユのＺ
ｒ粉末２０ｗｔ％とを、超硬合金（例えばＷＣ）製の回
転ボールミルに、超硬合金製のボール（直径約１゜■の
ＷＣ製ボール）とともに入れ、アルゴンガスを封入して
密封した。原料粉末とボールミルとの割合は重量比で４
５：ｌとした。ボールミルを回転速度３００回／分で７
時間回転して（メカニカルアロイング法）、両粉末を強
く局部圧接した複合粉末を得た。40 mesh W powder 80wt% and 200 mesh Z
20 wt % of R powder was placed in a rotary ball mill made of cemented carbide (for example, WC) together with a cemented carbide ball (a WC ball with a diameter of about 1°), and the mill was sealed with argon gas. The ratio of raw material powder to ball mill is 4 by weight.
5:l. 7 with a ball mill at a rotation speed of 300 times/min.
By rotating for a period of time (mechanical alloying method), a composite powder was obtained in which both powders were brought into strong local pressure contact.
この複合粉末を厚み５層層の軟綱で作成した直径３００
ｍｍ、高さ５００層層容器に真空封入した後、１１８０
℃、１０００気圧で５時間熱間静水圧プレスにより成形
し焼結体を得た。This composite powder was made with a soft rope of 5 layers in diameter.
After vacuum sealing in a container with a height of 500 mm and a height of 1180
A sintered body was obtained by hot isostatic pressing at 1000 atm at 100°C for 5 hours.
得られた焼結体を放電加工切断および平行研削、円筒研
削により、直径’２００ｍｍ、厚み７■の円板状ターゲ
ットに加工した。The obtained sintered body was processed into a disk-shaped target with a diameter of 200 mm and a thickness of 7 mm by electrical discharge machining cutting, parallel grinding, and cylindrical grinding.
一方、従来の方法として、上記実施例で用いたと同じＷ
とＺｒ粉末を同じ比率で、■型混合機で３０分間混合し
た。On the other hand, as a conventional method, W
and Zr powder were mixed in the same ratio for 30 minutes using a ■ type mixer.
その後、上記実施例と同じ軟鋼容器、熱間静水圧プレス
条件で成形し、同じ加工法で直径２００ｍ５、圧み７■
の円板状ターゲットを作成した°。Thereafter, a mild steel container was molded under the same hot isostatic pressing conditions as in the above example, and the diameter was 200 m5 and the pressure was 7 cm using the same processing method.
A disc-shaped target was created at °.
上記両ターゲットの密度比を測定して第１表に示した。The density ratios of both targets were measured and shown in Table 1.
また両ターゲットのＺ「の組成分布を直径」二の各位置
でＥＰＭＡにより測定して、結果を第２表に示した。In addition, the composition distribution of Z "diameter" of both targets was measured by EPMA at each position, and the results are shown in Table 2.
第１表かられかるように、本発明のターゲットの方が、
従来例よりも高密度である。また第２表から、組成比の
バラツキは本発明のターゲットが０．２ｗｔ％であるの
に対して、従来例のターゲットは３．７ｗｔ％であり、
本発明の方が組成比が均一であることがわかる。As can be seen from Table 1, the target of the present invention is more
It has a higher density than the conventional example. Furthermore, from Table 2, the variation in composition ratio is 0.2 wt% for the target of the present invention, while it is 3.7 wt% for the target of the conventional example.
It can be seen that the composition ratio of the present invention is more uniform.
なお、上記実施例は２種類の金属の合金の例であったが
、２種以上の金属を含む合金であっても同様の結果が得
られると考えられる。In addition, although the above-mentioned example was an example of an alloy of two types of metals, it is thought that similar results can be obtained even with an alloy containing two or more types of metals.
「実施例２」
金属とセラミックスとの複合ターゲットの製造方法の例
として、薄膜抵抗体を形成するのに用いるＣｒ−Ｓｉ０
２複合ターゲットを、以下の通り本発明の製法により製
造した。"Example 2" As an example of a method for manufacturing a composite target of metal and ceramics, Cr-Si0 used for forming a thin film resistor was
A two-composite target was manufactured by the method of the present invention as follows.
アトマイズ法で作成した１５０ ｇ ｙ＊以下のＣｒ粉
末に、３０ルー以下の５ｉ０２粉末を１８ｗｔ％添加し
た混合粉末を、めのう製の容器とめのう製のボール（直
径約１０■）よりなるボールミル中に入れ、さらにＡｒ
ガスを導入して不活性雰囲気とした。ボールミルを回転
速度５００回／分で５００時間回転て（メカニカルアロ
イング法）、両粉末を強く局部圧接した状態の８２ｗｔ
％Ｃｒ−１８ｗｔ％５ｉ０２複合粉末を作製した。A mixed powder made by adding 18 wt% of 5i02 powder of 30 Roux or less to Cr powder of 150 g y* or less produced by the atomization method was placed in a ball mill consisting of an agate container and an agate ball (about 10 cm in diameter). Add more Ar
Gas was introduced to create an inert atmosphere. A ball mill was rotated at a rotational speed of 500 times/min for 500 hours (mechanical alloying method) to produce an 82w powder with strong local pressure contact between both powders.
%Cr-18wt%5i02 composite powder was produced.
この複合粉末を、鉄製容器（直径３００麿■、高さ５０
■）に充填し、１１５０℃、！０００気圧で５時間熱間
静水圧プレスにより成形し焼結体を得た。This composite powder was poured into an iron container (diameter: 300mm, height: 50mm).
■) filled to 1150℃,! A sintered body was obtained by hot isostatic pressing at 0,000 atmospheres for 5 hours.
得られた焼結体を放′、ヒ切断により幅】２８■、長さ
３８２ｍｍ、厚み１１ｍｍに粗加工し、湿式モ行研削盤
により１！Ｊ １２７＋ｗ曽、長さ３８１１、厚みｌＯ
履腸のターグー２トとして仕にげ加工した。The obtained sintered body was rough-processed to a width of 28 mm, length of 382 mm, and thickness of 11 mm by free-cutting. J 127+w so, length 3811, thickness lO
It was processed as a two-piece targu for the ocella.
一方、比較材として本発明と同じＣｒおよびＳｉ０２粉
末をＶ型混合機で混合し、本発明品と同じ条件で熱間静
水圧プレスし、焼結した後、放電切断、湿式モ行研削に
より幅１２８ｍｍ、長さ３８１ｍｍ、厚みｌ０ｍ５のタ
ーゲットを作成した。On the other hand, as a comparative material, the same Cr and Si02 powders as the present invention were mixed in a V-type mixer, hot isostatically pressed under the same conditions as the present invention, sintered, and then cut into widths by electric discharge cutting and wet mowing. A target with a length of 128 mm, a length of 381 mm, and a thickness of 10 m5 was created.
本発明１と比較例の２つのターゲットをマグネトロン型
高周波スパッタ装置を用いて、 １０（ｌａｍ角のガラ
スノ、（板上にスパッタし、０．１５ ｇ ｍ厚みの薄
膜を形成した。Two targets, Invention 1 and Comparative Example, were sputtered onto a glass plate having an angle of 10 lam using a magnetron-type high-frequency sputtering device to form a thin film of 0.15 gm in thickness.
このスパッタを本発明と比較例についてそれぞれ１００
回行い、それぞれのガラス基板中央のスパッタ膜のＣｒ
組成をＥＰＭＡで分析し、その結果を第３表に示した。This sputtering was applied to 100% of each of the present invention and comparative example.
The Cr of the sputtered film in the center of each glass substrate was
The composition was analyzed by EPMA and the results are shown in Table 3.
の複合物であっても、ボールとともにそれぞれの粉末を
回転容器内で混合し互いに圧接させるので２種もしくは
それ以上の粉末を強く圧接した複合粉末を得ることがで
き、その後、成形、焼結しても組成に偏りが生じること
はなく、組成の均一なターゲットを得ることができる。Even in the case of composites, the powders are mixed together with balls in a rotating container and pressed against each other, making it possible to obtain a composite powder in which two or more powders are strongly pressed together, and then molded and sintered. However, the composition will not be biased, and a target with a uniform composition can be obtained.
第３表から、Ｃｒｗｔ％のバラツキは、本発明が０．４
ｗｔ％であり、比較例が２．２ｗｔ％であり、本発明の
方がスパッタ膜の組成が均一であることがわかる。From Table 3, the variation in Crwt% is 0.4 for the present invention.
It is found that the composition of the sputtered film of the present invention is more uniform, as it is 2.2 wt% in the comparative example.
なお上記実施例は、金属とセラミックスとの複合ターゲ
ットであるが、合金とセラミックスとの複合ターゲット
でも同様の結果が得られるものと考えられる。Although the above example uses a composite target of metal and ceramics, it is thought that similar results can be obtained with a composite target of alloy and ceramics.
「発明の効果」
本発明の製法によれば、２種以上の金属の比重差あるい
は溶融温度差により均一に混合しにくい合金、もしくは
金属あるいは合金とセラミックス出願人 ［１立金属
株式会社"Effects of the Invention" According to the manufacturing method of the present invention, it is possible to produce alloys that are difficult to mix uniformly due to differences in specific gravity or melting temperatures between two or more metals, or metals or alloys and ceramics.
Claims (2)
め均一に混合しにくい合金のターゲット製造方法におい
て、少なくとも２種以上の金属粉末とボールとを混合容
器に入れ、混合容器内を不活性ガス雰囲気又は真空にし
て混合容器を回転させることにより各金属粉末を局部圧
接させた複合粉末を作成し、その後、複合粉末を成形、
焼結することを特徴とするターゲットの製造方法。(1) In a method for manufacturing targets for alloys that are difficult to mix uniformly due to large differences in specific gravity or melting temperature of the constituent metals, at least two types of metal powder and balls are placed in a mixing container, and the inside of the mixing container is filled with an inert gas. A composite powder is created by locally pressurizing each metal powder by rotating the mixing container in an atmosphere or vacuum, and then molding the composite powder,
A method for manufacturing a target characterized by sintering.
ミックスとの複合組織よりなるターゲットの製造方法に
おいて、金属粉末あるいは合金粉末と、セラミックス粉
末とボールとを混合容器に入れ、混合容器内を不活性ガ
ス雰囲気又は真空にして混合容器を回転させることによ
り金属粉末あるいは合金粉末と、セラミックスを局部圧
接させた複合粉末を作成し、その後、複合粉末を成形、
焼結することを特徴とするターゲットの製造方法。(2) In a method for manufacturing a target consisting of a composite structure of metal or alloy and ceramics such as oxides and nitrides, metal powder or alloy powder, ceramic powder, and balls are placed in a mixing container, and the inside of the mixing container is By rotating the mixing container in an inert gas atmosphere or vacuum, a composite powder is created by locally pressurizing the metal powder or alloy powder and ceramics, and then the composite powder is molded.
A method for manufacturing a target characterized by sintering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20607988A JPH0254760A (en) | 1988-08-19 | 1988-08-19 | Manufacture of target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20607988A JPH0254760A (en) | 1988-08-19 | 1988-08-19 | Manufacture of target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0254760A true JPH0254760A (en) | 1990-02-23 |
Family
ID=16517477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20607988A Pending JPH0254760A (en) | 1988-08-19 | 1988-08-19 | Manufacture of target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0254760A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002069624A (en) * | 2000-08-30 | 2002-03-08 | Toshiba Corp | Sputtering target |
| JP2006307345A (en) * | 2006-05-08 | 2006-11-09 | Mitsui Mining & Smelting Co Ltd | Sputtering target |
| US7229588B2 (en) | 2001-04-11 | 2007-06-12 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidified alloy powders and elemental Pt metal |
| JP2009221608A (en) * | 2009-07-07 | 2009-10-01 | Mitsui Mining & Smelting Co Ltd | Sputtering target |
| JP2021181595A (en) * | 2020-05-18 | 2021-11-25 | 東京エレクトロン株式会社 | Composite target, manufacturing method of composite target, and forming method of nitride semiconductor film |
-
1988
- 1988-08-19 JP JP20607988A patent/JPH0254760A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002069624A (en) * | 2000-08-30 | 2002-03-08 | Toshiba Corp | Sputtering target |
| US7229588B2 (en) | 2001-04-11 | 2007-06-12 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidified alloy powders and elemental Pt metal |
| JP2006307345A (en) * | 2006-05-08 | 2006-11-09 | Mitsui Mining & Smelting Co Ltd | Sputtering target |
| JP2009221608A (en) * | 2009-07-07 | 2009-10-01 | Mitsui Mining & Smelting Co Ltd | Sputtering target |
| JP2021181595A (en) * | 2020-05-18 | 2021-11-25 | 東京エレクトロン株式会社 | Composite target, manufacturing method of composite target, and forming method of nitride semiconductor film |
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