JPH0254792A - Ruthenium plating solution - Google Patents
Ruthenium plating solutionInfo
- Publication number
- JPH0254792A JPH0254792A JP20340888A JP20340888A JPH0254792A JP H0254792 A JPH0254792 A JP H0254792A JP 20340888 A JP20340888 A JP 20340888A JP 20340888 A JP20340888 A JP 20340888A JP H0254792 A JPH0254792 A JP H0254792A
- Authority
- JP
- Japan
- Prior art keywords
- ruthenium
- salt
- plating
- acid
- plating solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
Abstract
Description
【発明の詳細な説明】 皮果よq剋■光! 本発明はルテニウムの電気めっき液の組成に関する。[Detailed description of the invention] Peel and fruit! Light! The present invention relates to the composition of a ruthenium electroplating solution.
鴛」ヱ1丸避
ルテニウムめっきは、電気接点部あるいは耐摩耗性を必
要とする機械部品等の表面の被覆に有用であり、また色
調と硬度の点から装飾品にも利用されている。Ruthenium plating is useful for coating the surfaces of electrical contacts or mechanical parts that require wear resistance, and is also used for decorative items due to its color tone and hardness.
従来提案されているめっき液としては、(RuzN(I
IzO)zYa)ff−(Y=CI又はBr) とスル
ファミン酸よりなるもの(特公昭47−4122)、(
NH4) 1(RuJ(llzO) ZCII+)にG
a、 In及びTIより選択された少くとも1種の金属
を含ませたもの(特公昭49−26175) 、(NH
a)zcRuzN(llzO)zcIa)にInと少く
とも1種類のプラチナ金属を含ませたもの(特公昭55
−44157)及びルテニウム金属とスルファミン酸と
の錯塩にNi、 Go、 Fe、 Sn、 Pb及びM
gから選ばれた少量の金属を含ませたもの(特開昭58
−1081)等が知られている。Conventionally proposed plating solutions include (RuzN(I)
IzO)zYa)ff-(Y=CI or Br) and sulfamic acid (Japanese Patent Publication No. 47-4122), (
NH4) 1 (RuJ(llzO) ZCII+) to G
a, containing at least one metal selected from In and TI (Japanese Patent Publication No. 49-26175), (NH
a) zcRuzN(llzO)zcIa) containing In and at least one type of platinum metal (Special Publication No. 55
-44157) and a complex salt of ruthenium metal and sulfamic acid containing Ni, Go, Fe, Sn, Pb and M
containing a small amount of metal selected from
-1081) etc. are known.
これらのめつき液の組成上の特徴は、ルテニウムがアコ
クロール錯体等の有機錯体となっていることであるが、
このようなめつき液ではめつき時間を長くすることによ
り厚い皮膜が得られるものの、皮膜厚みが2μm以上と
なるとクラックが発生し、外観不良となると共に液が劣
化され易く、析出速度が遅くなるという問題点があった
。The compositional feature of these plating solutions is that ruthenium is in the form of organic complexes such as acochlore complexes.
Although a thick film can be obtained by increasing the plating time with such a plating solution, if the film thickness exceeds 2 μm, cracks will occur, resulting in poor appearance, the solution is likely to deteriorate, and the deposition rate will be slow. There was a problem.
■が解” しようとする課
本発明は、従来の如上のルテニウムめっき液にみられる
問題点に鑑みなされたものであって、2μm以上の厚さ
のめっきを行ってもクランクの発生がなく、かつ光沢の
ある皮膜が得られるルテニウムめっき液を提供すること
を課題とする。The present invention was developed in view of the problems seen in the conventional ruthenium plating solution described above, and it does not cause cranking even when plating with a thickness of 2 μm or more. An object of the present invention is to provide a ruthenium plating solution that provides a glossy film.
以下本発明の詳細な説明する。The present invention will be explained in detail below.
課題+g決するための手段
本発明者らは、上記問題点を解決するため鋭意研究した
結果、ルテニウム塩として硫酸ルテニウム等の無機塩の
形態としたものを用い、これに添加剤として周期律表の
第■属の金属塩を少くとも1種類添加することにより、
めっき皮膜厚みを2μm以上としてもクラックのないめ
っき皮膜が得られることの知見を得て、本発明に至った
。As a result of intensive research in order to solve the above problems, the present inventors used ruthenium salt in the form of an inorganic salt such as ruthenium sulfate, and added additives containing compounds from the periodic table. By adding at least one type of metal salt of group ■,
The present invention was achieved based on the knowledge that a crack-free plating film can be obtained even when the plating film thickness is 2 μm or more.
本発明に用いるルテニウム塩は、上述のごとく硫酸ルテ
ニウム、塩化ルテニウム等の無機塩であれば良く、特に
硫酸ルテニウムが好ましい。As mentioned above, the ruthenium salt used in the present invention may be any inorganic salt such as ruthenium sulfate or ruthenium chloride, and ruthenium sulfate is particularly preferred.
めっき液中のルテニウム濃度としては、0.5〜50g
/ l 、好ましくは3〜log/ 7!である。0.
5g/ 12未満ではクランクのない2μ…以上のめつ
き皮膜を得ることが出来ず、一方、50g/ lを越え
ると厚付は出来るもののクランクが発生しやすくなる。The ruthenium concentration in the plating solution is 0.5 to 50 g.
/l, preferably 3 to log/7! It is. 0.
If it is less than 5 g/12, it will not be possible to obtain a plated film of 2 μm or more without cranks, while if it exceeds 50 g/l, thick coating will be possible but cranks will easily occur.
また、酸としては、硫酸、塩酸等の無機酸であれば良い
が、使用されるルテニウム塩の種類に合わせて選定する
のが好ましい。すなわち、ルテニウム塩として硫酸ルテ
ニウムを用いる場合、酸としては硫酸を用いる。Further, the acid may be any inorganic acid such as sulfuric acid or hydrochloric acid, but it is preferably selected according to the type of ruthenium salt used. That is, when using ruthenium sulfate as the ruthenium salt, sulfuric acid is used as the acid.
酸濃度としては、1〜100g/ I!、、好ましくは
6〜20g/ lである。Ig/ 1未満では、めっき
液中に水酸化物と思われる沈澱が生成し、100g/
I!を越えるとクラックが発生しやすくなる。The acid concentration is 1 to 100g/I! ,, preferably 6 to 20 g/l. If Ig/ is less than 1, a precipitate that is thought to be hydroxide will be formed in the plating solution, and if it is less than 100 g/
I! If it exceeds this, cracks are likely to occur.
次に、本発明で用いる第■属の金属塩としてはSc、
YSIn及びGa等の金属塩が例示され、Inを例にと
れば、硫酸インジウム、塩化インジウム、スルファミン
酸インジウム等が好ましい。Next, the metal salts of group Ⅰ used in the present invention include Sc,
Examples include metal salts such as YSIn and Ga. Taking In as an example, indium sulfate, indium chloride, indium sulfamate, etc. are preferable.
金属塩の濃度は、金属換算で0.1〜Log/ l、好
ましくは0.5〜3 g/ (!である。0.1g/A
未満では、クラックが発生しやす<、10g/7!を越
えると、曇りが発生しめつき不良となる。The concentration of the metal salt is 0.1 to Log/l, preferably 0.5 to 3 g/(!0.1 g/A) in terms of metal.
If it is less than 10g/7, cracks are likely to occur. If it exceeds this, clouding will occur and poor adhesion will occur.
本発明の重要なポイントは、この第■属の金属塩を添加
することであり、これによりめっき皮膜の内部応力によ
るクランクの発生を抑制し、2μm以上でクラックがな
く光沢のあるめっき皮膜を得ることが出来る。The important point of the present invention is to add this group Ⅰ metal salt, thereby suppressing the occurrence of cracks due to internal stress in the plating film, and obtaining a glossy plating film with no cracks of 2 μm or more. I can do it.
これら添加金属の作用については、明確なことは判って
いないが、めっき皮膜中にat検出されることから、ル
テニウムと共析することによりめっき皮膜の内部応力を
何らかの形で緩和しているものと考えられる。The effects of these additive metals are not clearly known, but since at is detected in the plating film, it is assumed that they somehow alleviate the internal stress of the plating film by eutectoiding with ruthenium. Conceivable.
本発明のルテニウムめっき液を使用してめっきを行うに
当っては、めっき液の温度は30〜80℃、好ましくは
50〜70℃とするのが望ましい。30℃未満だと析出
速度が遅<、80℃を越えるとめつき液からの蒸発が問
題となり、めっき液の濃度を一定とするため水の補充等
が必要となる。When performing plating using the ruthenium plating solution of the present invention, it is desirable that the temperature of the plating solution be 30 to 80°C, preferably 50 to 70°C. If the temperature is less than 30°C, the deposition rate is slow; if it exceeds 80°C, evaporation from the plating solution becomes a problem, and water needs to be replenished to keep the concentration of the plating solution constant.
又、液の撹拌は、物質移動を促進するため行うことが好
ましいが、本発明では静止浴を用いる場合は、被めっき
物を動揺させる程度でも良い。Further, it is preferable to stir the liquid in order to promote mass transfer, but when a static bath is used in the present invention, it may be sufficient to stir the object to be plated.
方、噴流式めっき装置を用いてめっきをする場合には、
液流速は、1〜4 m/sが好ましい。1m八未満だと
析出速度が遅く、4 m/sを越えるとクラ・7りが発
生しやす(なる。On the other hand, when plating using jet plating equipment,
The liquid flow rate is preferably 1 to 4 m/s. If it is less than 1 m/s, the deposition speed will be slow, and if it exceeds 4 m/s, cracks and cracks will easily occur.
電流密度は、静止浴の場合2〜10A/dm”、噴流式
の場合lO〜12OA/dmzが好ましい。いずれの場
合も下限値未満では析出速度が遅く、上限値を越えると
クランクが発生しやすくなる。The current density is preferably 2 to 10 A/dm'' in the case of a static bath, and 10 to 12 OA/dmz in the case of a jet type. In either case, if it is less than the lower limit, the deposition rate is slow, and if it exceeds the upper limit, cranking is likely to occur. Become.
一方、本発明のめつき液の対象となる金属は、特に制限
はないが、ニッケル、ステンレス、銅、黄銅、チタン、
金、銀等が例示される。On the other hand, the metals to be used in the plating solution of the present invention are not particularly limited, but include nickel, stainless steel, copper, brass, titanium,
Examples include gold and silver.
以下実施例により本発明を具体的に説明する。The present invention will be specifically explained below using Examples.
実施例1
20m+s X 25+amの黄銅板を用い、アノード
は白金板とし、ルテニウム濃度:3〜5 g/ ff
、 H2SO4濃度= 6〜10g/ l、添加剤濃度
:0〜2g#!、電流密度:2〜5 A/dm!、めっ
き時間:30〜80分とし、静止浴(液温:50℃)で
めっき試験を行った。Example 1 A 20m+s x 25+am brass plate was used, the anode was a platinum plate, and the ruthenium concentration was 3 to 5 g/ff.
, H2SO4 concentration = 6-10g/l, additive concentration: 0-2g#! , current density: 2-5 A/dm! A plating test was conducted in a static bath (liquid temperature: 50°C) with a plating time of 30 to 80 minutes.
その結果を第1表に示す。The results are shown in Table 1.
実施例2
20m+* X 25mmの黄銅板を用い、アノードは
白金板とし、ルテニウム濃度:10〜15g/ N 、
pfl : 2.5、添加剤濃度:0〜3g/β、電
流密度:40〜60八/dn+”、めっき時間:5〜2
0分とし、噴流式(液流速:2m八、温度ニア0℃)で
めっき試験を行った。Example 2 A 20m+*×25mm brass plate was used, the anode was a platinum plate, and the ruthenium concentration was 10 to 15 g/N.
pfl: 2.5, additive concentration: 0-3g/β, current density: 40-608/dn+", plating time: 5-2
The plating test was conducted in a jet type (liquid flow rate: 2m8, temperature near 0°C) for 0 minutes.
その結果を第2表に示す。The results are shown in Table 2.
光1Eし1果
以上説明したように、本発明のルテニウムめっき液を用
いいることにより、めっき厚みを2μM以上としてもク
ランクがなく、かつ光沢のある皮膜が得られるため、電
気接点材料等として適用する場合、寿命が長くかつ信頼
性のある製品が得られる。As explained above, by using the ruthenium plating solution of the present invention, even if the plating thickness is 2 μM or more, a shiny film without cranking can be obtained, so it can be applied as an electrical contact material, etc. This results in a long-lasting and reliable product.
Claims (3)
第III属の金属塩から選択された少くとも1種類の金属
塩を含むことを特徴とするルテニウムめつき液。(1) Main ingredients are ruthenium inorganic salt and acid, and
A ruthenium plating solution comprising at least one metal salt selected from Group III metal salts.
成る群から選択される金属の塩である請求項(1)に記
載のルテニウムめつき液。(2) The ruthenium plating solution according to claim 1, wherein the Group III metal salt is a salt of a metal selected from the group consisting of Sc, Y, In, and Ga.
(1)に記載のルテニウムめつき液。(3) The ruthenium plating solution according to claim (1), wherein the ruthenium inorganic salt is ruthenium sulfate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20340888A JPH0254792A (en) | 1988-08-16 | 1988-08-16 | Ruthenium plating solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20340888A JPH0254792A (en) | 1988-08-16 | 1988-08-16 | Ruthenium plating solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0254792A true JPH0254792A (en) | 1990-02-23 |
Family
ID=16473571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20340888A Pending JPH0254792A (en) | 1988-08-16 | 1988-08-16 | Ruthenium plating solution |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0254792A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012171856A2 (en) | 2011-06-17 | 2012-12-20 | Umicore Galvanotechnik Gmbh | Electrolyte and its use for the deposition of black ruthenium coatings and coatings obtained in this way |
-
1988
- 1988-08-16 JP JP20340888A patent/JPH0254792A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012171856A2 (en) | 2011-06-17 | 2012-12-20 | Umicore Galvanotechnik Gmbh | Electrolyte and its use for the deposition of black ruthenium coatings and coatings obtained in this way |
| DE102011105207A1 (en) | 2011-06-17 | 2012-12-20 | Umicore Galvanotechnik Gmbh | Electrolyte and its use for the deposition of black ruthenium coatings and coatings thus obtained |
| DE102011105207B4 (en) * | 2011-06-17 | 2015-09-10 | Umicore Galvanotechnik Gmbh | Electrolyte and its use for the deposition of black ruthenium coatings and coatings and articles obtained therefrom |
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