JPH0257635A - Manufacture of extra thin foil of grain-oriented silicon steel with low core loss - Google Patents
Manufacture of extra thin foil of grain-oriented silicon steel with low core lossInfo
- Publication number
- JPH0257635A JPH0257635A JP20629888A JP20629888A JPH0257635A JP H0257635 A JPH0257635 A JP H0257635A JP 20629888 A JP20629888 A JP 20629888A JP 20629888 A JP20629888 A JP 20629888A JP H0257635 A JPH0257635 A JP H0257635A
- Authority
- JP
- Japan
- Prior art keywords
- silicon steel
- oriented silicon
- strip
- producing
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000976 Electrical steel Inorganic materials 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000011888 foil Substances 0.000 title abstract 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 238000005097 cold rolling Methods 0.000 claims abstract description 8
- 238000000746 purification Methods 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 238000005096 rolling process Methods 0.000 claims description 19
- 230000009467 reduction Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 229910000831 Steel Inorganic materials 0.000 claims description 12
- 239000010959 steel Substances 0.000 claims description 12
- 238000001953 recrystallisation Methods 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims 2
- 238000011282 treatment Methods 0.000 abstract description 2
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 14
- 230000004907 flux Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 229910052742 iron Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000005162 X-ray Laue diffraction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- -1 AIN Chemical class 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 159000000003 magnesium salts Chemical class 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Landscapes
- Manufacturing Of Steel Electrode Plates (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は鋼帯の圧延方向に磁化容易軸(001)を有す
るいわゆる方向性ケイ素鋼帯の製造法に関するものであ
り、特に極薄鋼帯でかつ高磁束密度、低鉄損の方向性ケ
イ素鋼帯の製造法に関するものである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a method for producing a so-called grain-oriented silicon steel strip having an axis of easy magnetization (001) in the rolling direction of the steel strip. The present invention relates to a method for producing a grain-oriented silicon steel strip with high magnetic flux density and low iron loss.
ケイ素を2〜8重量%有する方向性ケイ素鋼帯素材を板
厚150μm以下、圧下率5096以上の条件で冷間圧
延し、(11x)[”112)方位を有する極薄帯を作
り、その後非酸化雰囲気あるいは、減圧雰囲気中での熱
処理工程で、1.5′cA!p以上の昇温速度で常温よ
り加熱し、約1000〜1400℃に3時間以上保持し
た後冷却することにより磁気特性の優れた、平均結晶粒
径5u以上と極めて大きく、圧延方向に対する(001
)軸の平均ずれ角度λ5° 以下の配向性の高い方向性
ケイ素鋼帯を得ることができる。その特性は、第1図に
示すように鉄損が少なく、第2図に示すようにシャープ
なり−Hループ特性のものである。これにより、いわゆ
る方向性ケイ素鋼帯より、板厚が薄く、しかも磁気特性
の点で磁束密度が高く、保磁力も小さい特愼と共に鉄損
が少なく、配向性の高い方向性ケイ素鋼帯を得ることが
できる。A grain-oriented silicon steel strip material containing 2 to 8% by weight of silicon is cold-rolled under conditions of a plate thickness of 150 μm or less and a rolling reduction of 5096 or more to produce an ultra-thin strip with a (11x)[”112] orientation, and then In a heat treatment process in an oxidizing atmosphere or a reduced pressure atmosphere, magnetic properties can be improved by heating from room temperature at a temperature increase rate of 1.5'cA!p or more, holding at about 1000 to 1400°C for more than 3 hours, and then cooling. Excellent, extremely large average grain size of 5u or more, (001
) A highly oriented silicon steel strip having an average axis deviation angle of λ5° or less can be obtained. Its characteristics include low iron loss as shown in FIG. 1, and sharp -H loop characteristics as shown in FIG. 2. This results in a grain-oriented silicon steel strip that is thinner than so-called grain-oriented silicon steel strips, has high magnetic flux density in terms of magnetic properties, has low coercive force, has low core loss, and is highly oriented. be able to.
しかしこの方法では、方向性ケイ素鋼帯を出発原料とす
るため、材料費が高価であるという点と、高速昇温(1
,5℃/ec以上)が必要であるという問題点を有して
いた。However, this method uses a grain-oriented silicon steel strip as the starting material, so the material cost is high and the temperature rises rapidly (1
, 5° C./ec or higher).
本発明の目的は、前述したような従来技術の問題点を解
消し、安価な材料の無方向性ケイ素鋼帯を出発原料とす
ること及び、より低速での昇温を実現することにある。An object of the present invention is to solve the problems of the prior art as described above, to use an inexpensive non-oriented silicon steel strip as a starting material, and to realize temperature increase at a lower rate.
(1m!題を解決するための手段〕
前述の目的を達成するため、本発明は製造工程が簡便で
、安価な無方向性ケイ素鋼帯を使用し、その表面破覆を
除去した後、水素中で例えば1200℃で5時間の高温
純化焼鈍を行なう第1工程と、その後素材を冷間圧延し
中間極薄帯を得る第2工程と、その第2工程の後に前記
中間極薄帯を例えば減圧下や非酸化性雰囲気中において
、例えば、1000℃で2時間程度高温熱処理すること
により、高度に集積された(No)〔ool)方位を有
する2次再結晶の集合組織からなる低損失方向性ケイ素
鋼極薄帯を得る第3工程とを経由することを特徴とする
ものである。(Means for solving the 1m! problem) In order to achieve the above-mentioned object, the present invention uses a non-oriented silicon steel strip which has a simple manufacturing process and is inexpensive, and after removing the surface breakage, hydrogen Among them, a first step of performing high-temperature purification annealing at, for example, 1200° C. for 5 hours, a second step of cold rolling the material to obtain an intermediate ultra-thin strip, and after the second step, the intermediate ultra-thin strip is, for example, By performing high-temperature heat treatment at, for example, 1000°C for about 2 hours under reduced pressure or in a non-oxidizing atmosphere, a low-loss orientation consisting of a secondary recrystallized texture with highly integrated (No) [ool] orientations is produced. and a third step of obtaining an ultra-thin silicon steel strip.
本発明で使用するケイ素鋼帯は製造工程において二次再
結晶のための高温焼鈍等を実施せず、−例をあげると熱
延後、冷延+焼鈍という工程で製造されたもので、ケイ
素含有量は1.5〜8重f%のものを用いるのがよい。The silicon steel strip used in the present invention does not undergo high-temperature annealing for secondary recrystallization during the manufacturing process, and is manufactured through a process of hot rolling, cold rolling, and annealing, for example, and silicon It is preferable to use a content of 1.5 to 8% by weight.
ケイ素を約1.5重量%以上含有するケイ素鋼帯は、r
変態がなく、高温焼鈍により結晶粒を大きくしたり、2
次再結晶を生じさせ、好ましい集合組織を形成させるこ
とが可能であるが、
ケイ素の含有量がt、S重量%未満では前述の特徴が発
揮されない。一方、ケイ素含有量が8重量%を超えると
、飽和磁束密度が、約1.7T以下となるため、磁性材
料としては不適当であるばかりでなく機械的に著しく脆
弱になるので好ましくない。A silicon steel strip containing about 1.5% by weight or more of silicon is r
There is no transformation, and the crystal grains can be enlarged by high-temperature annealing.
Although it is possible to cause secondary recrystallization to form a preferable texture, the above-mentioned characteristics are not exhibited when the silicon content is less than t,S weight percent. On the other hand, if the silicon content exceeds 8% by weight, the saturation magnetic flux density will be about 1.7 T or less, which is not only unsuitable as a magnetic material but also makes it mechanically extremely fragile, which is not preferable.
特にケイ素含有量が、2.5〜4.0 重量%のもの
は、圧延等の機械的性質に優れ、飽和磁束密度も高く好
適である。Particularly, those having a silicon content of 2.5 to 4.0% by weight are suitable for excellent mechanical properties such as rolling and high saturation magnetic flux density.
また無方向性ケイ素鋼帯には不純物を除去し鋼中をクリ
ーンにすると共に、電気抵抗を増し磁気特性を改善する
ためMが0.1〜1.0重量%添加されている。しかし
ながら、AIは鋼中に存在する0と結合し、AlzOs
の層が表面に析出するため、表面エネルギを利用する再
結晶を妨げる働きをする。Additionally, 0.1 to 1.0% by weight of M is added to the non-oriented silicon steel strip in order to remove impurities and make the steel clean, as well as increase electrical resistance and improve magnetic properties. However, AI combines with the 0 present in the steel, forming AlzOs
layer precipitates on the surface, which acts to prevent recrystallization using surface energy.
またAJはNと結びつきAjNとして1次再結晶の成長
を妨げる働きをし、2次再結晶粒の成長にも影響を及ぼ
す。従って、これらの働きをするtAl=0.003重
量%以下にする必要がある。Furthermore, AJ combines with N and acts as AjN to inhibit the growth of primary recrystallization, and also affects the growth of secondary recrystallization grains. Therefore, it is necessary that tAl, which performs these functions, be 0.003% by weight or less.
またMnについてもMnSとしてインヒビタの働きをす
るため、庵の含有率を0.04重量%以下とする必要が
ある。Furthermore, since Mn acts as an inhibitor in the form of MnS, the content of Mn needs to be 0.04% by weight or less.
次に不可避混入元素として例えば、N!ICtL@M0
1W、Crなどを少量含有することもある。さらに、
0C,Nなどの不可避不純物の含有量は最終的に目的と
する薄帯の品質に応じて制限されねばならない。Next, as an unavoidable mixed element, for example, N! ICtL@M0
It may also contain small amounts of 1W, Cr, etc. moreover,
The content of unavoidable impurities such as 0C and N must be limited depending on the quality of the final target ribbon.
なお、本発明で使用する素材としての無方向性ケイ素鋼
素材としては、市販の無方向ケイ素鋼帯として例えば第
10図のようなものが使用できる。As the non-oriented silicon steel material used in the present invention, a commercially available non-oriented silicon steel strip as shown in FIG. 10, for example, can be used.
市販の無方向性ケイ素鋼帯では、この第10図に示され
ているように板厚がα35mのものがある。これらのケ
イ素鋼帯を素材として用い、表面被膜を酸により除去し
た後、MIO等の焼鈍分離剤を塗布する。その後、Al
tosや、AIN等のAI化合物あるいはMJ等の翫化
合物のように表面に析出して表面エネルギをブロックし
て再結晶を妨げたり、インヒビタとして作用するものを
分解してS、Nの如き形で気相中に逸散させるか、ある
いはAlzCh 1Mn5などの状態で7オルステライ
ト被膜(MgzSiO< )中に濃縮させ鋼中から除去
するため、水素中1000〜1200℃で保持時間は3
時間以上必要である。Some commercially available non-oriented silicon steel strips have a thickness of α35m, as shown in FIG. These silicon steel strips are used as raw materials, and after the surface coating is removed with acid, an annealing separation agent such as MIO is applied. After that, Al
Tos, AI compounds such as AIN, or cylindrical compounds such as MJ precipitate on the surface and block surface energy to prevent recrystallization, or decompose substances that act as inhibitors into forms such as S and N. In order to remove it from the steel by dissipating it into the gas phase or by concentrating it in a state such as AlzCh 1Mn5 into a 7 orsterite coating (MgzSiO<), the holding time was 3 at 1000-1200°C in hydrogen.
It takes more than an hour.
次にこのようにして純化された素材を用い、冷間圧延で
150□以下に圧延される。この圧下率は1回の圧下率
が10%以上トータル圧下率70%以上あれば十分で、
冷間圧延の本来の主旨は結晶歪のある極薄の結晶体を得
ることにある。また本発明では150μmを超える板厚
では表面エネルギが駆動力となって表面エネルギの一番
低い(110)面が成長するには板厚が厚すぎるためと
考えられる。Next, using the material purified in this way, it is cold rolled to a size of 150 □ or less. It is sufficient for this rolling reduction rate to be at least 10% per roll and at least 70% in total.
The original purpose of cold rolling is to obtain an extremely thin crystalline body with crystal distortion. Further, in the present invention, it is thought that when the thickness exceeds 150 μm, the surface energy becomes a driving force and the thickness is too thick for the (110) plane with the lowest surface energy to grow.
冷間圧延後の熱処理は、熱処理中に(100)〔OAt
)組織の発生を抑制するため、不活性ガスと10%以上
の水素ガスまたは水素ガス100 %あるいは、2 X
10−’〜2 X IQ−”l’Orr程度の真空と
すればよい。In the heat treatment after cold rolling, (100) [OAt
) In order to suppress the formation of tissues, inert gas and 10% or more hydrogen gas or 100% hydrogen gas or 2
The vacuum may be approximately 10-' to 2 X IQ-"l'Orr.
熱処理用の加熱炉はパッチタイプのものでも連続タイプ
のものでもよい。熱処理保持温度は950〜1100℃
で保持時間は1〜3時間必要である。この方法によれば
熱処理昇温速度は、α5!秒以上でよく、従来の1.5
φ秒に比べはるかに緩かな昇温である。The heating furnace for heat treatment may be of a patch type or a continuous type. Heat treatment holding temperature is 950-1100℃
A holding time of 1 to 3 hours is required. According to this method, the heat treatment temperature increase rate is α5! 1.5 seconds or more is sufficient, compared to the conventional 1.5 seconds.
The temperature rise is much slower than that during φ seconds.
熱処理後は、機械的性質や磁気特性の低下を招かないよ
う非酸化雰囲気下で冷却すれば、高温で得られた好まし
い集合組織を維持することができる。次に本発明に係る
処理方法の具体例について説明する。After heat treatment, the preferable texture obtained at high temperature can be maintained by cooling in a non-oxidizing atmosphere to avoid deterioration of mechanical properties and magnetic properties. Next, a specific example of the processing method according to the present invention will be explained.
素材として、無方向性ケイ素鋼帯(So 9 )を用い
た。この無方向性ケイ素鋼帯の特性等は下記の通りであ
る。A non-oriented silicon steel strip (So 9 ) was used as the material. The properties of this non-oriented silicon steel strip are as follows.
幅 30鶴
長さ 300 m
密度 ?、65 El/di鉄損(Was
/sa ) 140 W/に+?磁束密度(Bso
) 1.62 Tこのケイ素鋼帯を濃硫酸と弗酸の
混合溶液(a硫酸3:弗酸1)に40分間浸貸し、その
後水洗して、さらに10%の硝酸水溶液で酸洗い後水洗
して鋼帯の表面に形成されている絶縁破膜や酸化物被膜
を除去する。Width: 30 cm Length: 300 m Density? , 65 El/di iron loss (Was
/sa) 140 W/+? Magnetic flux density (Bso
) 1.62T This silicon steel strip was immersed in a mixed solution of concentrated sulfuric acid and hydrofluoric acid (3 sulfuric acid: 1 part hydrofluoric acid) for 40 minutes, then washed with water, further pickled with a 10% aqueous nitric acid solution, and then washed with water. The insulation film and oxide film formed on the surface of the steel strip are removed.
次に焼鈍分離剤であるMgOを塗布し、その後水素ガス
中で1200℃の温度まで加熱し、5時間保持という純
化焼鈍を行なう。その後直径が20mの4段ロール圧延
機を用いて70μ説まで(1〜7回)圧延し、その後各
端部な除いて幅1ON1長さ100mの大きさに切断し
てサンプルとする。前述のように板厚が350絹のもの
を70μ麓まで圧延してサンプルとしたのであるからこ
のサンプルの圧下率は80チとなる。Next, MgO, which is an annealing separator, is applied, followed by purification annealing, which is heated to a temperature of 1200° C. in hydrogen gas and held for 5 hours. Thereafter, it was rolled to 70 μm (1 to 7 times) using a 4-roll mill with a diameter of 20 m, and then cut into pieces with a width of 1 ON and a length of 100 m, excluding each end, to prepare a sample. As mentioned above, the sample was made by rolling a sheet of 350 mm thick to a thickness of 70 μm, so the rolling reduction ratio of this sample was 80 μm.
次にこのサンプルを石英管に入れ、5 X 10”’T
orrの高真空下において加熱炉を用い昇温速度30″
cA+の条件で熱処理した。熱処理後の結晶粒の観察は
X線ラウェ写真、X線極点観測および光学顕微鏡を用い
て行ない、磁気特性はB−Hループトレーサを用いて測
定した。This sample was then placed in a quartz tube, 5 x 10'''T
Temperature increase rate is 30'' using a heating furnace under high vacuum of orr.
Heat treatment was performed under cA+ conditions. The crystal grains after heat treatment were observed using an X-ray Laue photograph, an X-ray pole observation, and an optical microscope, and the magnetic properties were measured using a B-H loop tracer.
第3図に熱処理保持温度と磁気特性を示す。この図に示
されているように、700℃以下ではB8値が低い値を
示すが、700℃付近から徐々に増大し、950℃でB
sは1.93Tに達する。又この時(11o)〔001
)集合組織の出現がX線ラウェ写真により確認された。Figure 3 shows the heat treatment holding temperature and magnetic properties. As shown in this figure, the B8 value shows a low value below 700°C, but gradually increases from around 700°C, and at 950°C, the B8 value shows a low value.
s reaches 1.93T. At this time again (11o) [001
) The appearance of texture was confirmed by X-ray Laue photography.
この実験から明らかなように、600℃で歪の除去、回
復と一次再結晶が開始し、700℃で一次再結晶粒の成
長が生じる。モしてSOO℃で二次再結晶が起り、95
0℃以上の保持で粒径5〜10mの2次再結晶粒で覆わ
れる。従って、2次再結晶の成長が開始するSOO℃以
上において保磁力が急速に低下していることがわかる。As is clear from this experiment, strain removal, recovery, and primary recrystallization begin at 600°C, and growth of primary recrystallized grains occurs at 700°C. Then, secondary recrystallization occurs at SOO℃, and 95
When the temperature is maintained at 0°C or higher, it is covered with secondary recrystallized grains with a grain size of 5 to 10 m. Therefore, it can be seen that the coercive force rapidly decreases at temperatures above SOO° C. where the growth of secondary recrystallization begins.
この時の真空度は5 X 10−”l’Orrであった
が、次に真空度の影響を調査する実験を行った。The degree of vacuum at this time was 5.times.10-"l'Orr, and next, an experiment was conducted to investigate the influence of the degree of vacuum.
IQ””pOff以下又はアルゴンガス中では(110
)〔001)集合組織が限定されて発達せず、(100
)〔OAZ)の組織が一部発達する。また、アルゴンガ
ス中に10%以上の水素を添加することKより、 Bs
= 1.93Tを満足することができた。これにより熱
処理雰囲気としては、x□−4Toff以上の真空度又
は10%以上の水素を含む非酸化性雰囲気であれば良い
ことがわかった。Below IQ""pOff or in argon gas (110
) [001) Texture is limited and does not develop, (100
) [OAZ) tissue partially develops. In addition, by adding 10% or more hydrogen to argon gas, Bs
= 1.93T was able to be satisfied. As a result, it was found that the heat treatment atmosphere may be a vacuum degree of x□-4Toff or more or a non-oxidizing atmosphere containing 10% or more of hydrogen.
次に圧下率について述べる。第4図は、圧下率と保磁力
の関係を示す。圧下率70%以下では保磁力が高く、熱
処理後のX線ラウェ写真観測結果においても(110)
〔001)の中にその他の方位の結晶も出現しており、
70チ以上の圧下率が必要と考えられる。また90%を
超す圧下率では圧延薄帯に小孔が出現するため、圧下率
の範囲は70〜90%が良好である。さらに圧下後の厚
さは、表面エネルギの状態を考慮して150pm以下が
必要であると考えられる。Next, we will discuss the rolling reduction ratio. FIG. 4 shows the relationship between rolling reduction and coercive force. The coercive force is high when the reduction rate is 70% or less, and the results of X-ray Laue photograph observation after heat treatment also show that (110)
Crystals with other orientations also appear in [001),
It is thought that a rolling reduction of 70 inches or more is required. Moreover, since small holes appear in the rolled ribbon at a rolling reduction of more than 90%, a range of rolling reduction of 70 to 90% is preferable. Further, it is considered that the thickness after rolling needs to be 150 pm or less in consideration of the state of surface energy.
これまでの実験で判明した結果より、圧下率80%で圧
延し、真空度5 X 10”pOrr下において保持温
度1000℃の条件で保持時間を変化させて、各試料の
保磁力を測定した。その結果を第5図に示す。この図か
ら明らかなように、保持時間1時間以下では二次再結晶
粒が十分に発達しきれず、保磁力が十分に下がりきって
いない。逆に保持時間3時間以上では(110)〔00
1)以外の三次再結晶組織が生じ、保磁力が増加する傾
向にある。このため最適条件としては、1〜3時間の保
持時間である。Based on the results found in previous experiments, the coercive force of each sample was measured by rolling at a reduction rate of 80%, under a vacuum degree of 5 x 10'' pOrr, and by changing the holding time at a holding temperature of 1000°C. The results are shown in Figure 5.As is clear from this figure, if the holding time is less than 1 hour, the secondary recrystallized grains will not be fully developed and the coercive force will not be sufficiently reduced. For hours or more (110) [00
A tertiary recrystallized structure other than 1) occurs, and the coercive force tends to increase. Therefore, the optimum condition is a holding time of 1 to 3 hours.
次に添加物のうち、Al含有量についての影響を調査し
た。第6図は横軸にAIN等として含まれるAJ化合物
のAJli量チを、縦軸に保磁力を示す。Next, the influence of Al content among additives was investigated. In FIG. 6, the horizontal axis shows the AJli amount of the AJ compound contained as AIN, etc., and the vertical axis shows the coercive force.
これらAlを含有する種々の素材を最適条件で圧延熱処
理し保磁力を測定したものであるが、AI 0.003
重量−以上で・は、AIが有害物質として作用し、第3
工程での二次再結粒成長の妨げとなり、保磁力が急激に
上昇している。従って、第1工程で純化のため、水素中
高温純化焼鈍を実施し、出発原料のAl含有量を0.0
05重量−以下とする必要がある。These various Al-containing materials were subjected to rolling heat treatment under optimal conditions and the coercive force was measured.
At weights above -, AI acts as a harmful substance and the third
This impedes secondary re-agglomeration growth in the process, causing a rapid increase in coercive force. Therefore, in the first step, high-temperature purification annealing in hydrogen was performed for purification, and the Al content of the starting material was reduced to 0.0.
05 weight - or less.
同様に4含有量についても同様な実験を行ない、4含有
量0.04 %以下とする必要があることを確認した。Similarly, a similar experiment was conducted regarding the 4 content, and it was confirmed that the 4 content should be 0.04% or less.
以上述べた各種最適条件で処理したケイ素鋼極薄帯の磁
気特性を示す。第7図(a)は圧下率80チで冷延後、
1000℃×2時間で熱処理後のB−Hループ特性で、
二次再結晶粒が十分に発達しているため、第7図(b)
に示す無方向性ケイ素鋼帯のB−Hループ特性に比べ非
常にシャープな形状を示すことがわかる。The magnetic properties of ultrathin silicon steel strips processed under the various optimal conditions described above are shown. Figure 7(a) shows after cold rolling at a reduction rate of 80 inches,
B-H loop characteristics after heat treatment at 1000℃ x 2 hours,
Because the secondary recrystallized grains are sufficiently developed, Fig. 7(b)
It can be seen that the B-H loop characteristic of the non-oriented silicon steel strip shown in FIG.
第8図は、第7図(a)の材料の各磁束密度における全
鉄損を示すが、曲線Bは熱処理ままの曲線、曲線Aはそ
の鋼帯の表面にマグネシウム塩系の塗膜形成剤を途布し
、約SOO℃に加熱して鋼帯に約1〜4更/−の張力を
与えた場合の鉄損値曲線である。熱処理のままにおいて
も、Ws s / s o = 0.32WAgと、い
わゆる方向性ケイ素鋼板(ハイビー)より各段に改善さ
れていることがわかる。また被膜により張力付与するこ
とによりWs s/s o =0.27 W/kfと2
6チの改善がなされている。Figure 8 shows the total iron loss at each magnetic flux density for the material in Figure 7 (a), where curve B is the curve for the as-heat-treated material, and curve A is for the steel strip coated with a magnesium salt-based film forming agent on the surface. This is an iron loss value curve when the steel strip is heated to approximately SOO° C. and a tension of approximately 1 to 4 cm is applied to the steel strip. It can be seen that even after the heat treatment, Ws s / s o =0.32 WAg, which is significantly improved compared to the so-called grain-oriented silicon steel sheet (Hi-V). In addition, by applying tension with the coating, Ws s/s o =0.27 W/kf and 2
Six improvements have been made.
第10図は、本発明に係る製造法で得られた低損失で配
向性の高い方向性ケイ素極薄鋼帯並びに従来品の磁気特
性を示す図である。この図に示すように、従来の高磁束
密度ケイ素鋼帯と同等の配向性を150μ寓以下で実現
し、しかも出発原料の価格が従来例で述べた高配向性ケ
イ素鋼帯の%で熱処理保持温度も低く、熱処理保持時間
も短く、昇温速度も従来の%以下のため、純化焼鈍が1
度付加されるものの、熱処理の際のエネルギコストが2
と製造コストを低減可能である。このため安価に150
μ寓以下の低損失方向性ケイ素鋼薄帯を得ることができ
る。FIG. 10 is a diagram showing the magnetic properties of a oriented silicon ultra-thin steel strip with low loss and high orientation obtained by the manufacturing method according to the present invention and a conventional product. As shown in this figure, the same level of orientation as conventional high magnetic flux density silicon steel strips has been achieved at less than 150 μm, and the price of the starting raw material is % of that of the highly oriented silicon steel strips mentioned in the conventional example. Because the temperature is low, the heat treatment holding time is short, and the temperature increase rate is less than 1% of the conventional rate, purification annealing is
The energy cost during heat treatment is 2
It is possible to reduce manufacturing costs. Therefore, 150 yen is cheap.
It is possible to obtain a low-loss oriented silicon steel ribbon of less than μ.
なお、前記低損失方向性ケイ素鋼極薄帯の圧延方向に対
する(001)軸の平均ずれ角度は27度以内の高配向
性を有している。Note that the low-loss oriented ultrathin silicon steel strip has high orientation, with an average deviation angle of the (001) axis relative to the rolling direction being within 27 degrees.
第1図は従来例の鉄損−磁束密度特性図、第2図は従来
例によるB−H特性図、第3図は磁束密度(Bs)−熱
処理温度特性図、第4図は保磁力と圧下率の特性図、第
5図は保磁力と保持時間の特は本発明による処理後のB
−H特性図、第8図は本発明による鉄損と磁束密度特性
図、第9図は無方向ケイ素鋼の一例を示す特性図、第1
θ図は本発明法と従来法、超急冷法等により得られた材
料の磁気特性比較図である。
第1図
第2面
o、al
B (KG)
、万を鼠求 ち度 (T)
第3区
第4図
1ヨ五下 辛 (うに−)
第7面
ζCノ
f3(KGノ
イ÷=ビ
第5図
1采著JトヨLう門(分〕
第6図
第7図
(b)
B(KG)
′、1
−20[
第8図
磁束
・g贋
(T)
第
図
第10図Figure 1 is an iron loss vs. magnetic flux density characteristic diagram of the conventional example, Figure 2 is a B-H characteristic diagram of the conventional example, Figure 3 is a magnetic flux density (Bs) vs. heat treatment temperature characteristic diagram, and Figure 4 is a coercive force vs. A characteristic diagram of rolling reduction ratio, Figure 5, shows the characteristics of coercive force and holding time of B after treatment according to the present invention.
-H characteristic diagram, FIG. 8 is an iron loss and magnetic flux density characteristic diagram according to the present invention, FIG. 9 is a characteristic diagram showing an example of non-oriented silicon steel, and FIG.
The θ diagram is a comparison diagram of the magnetic properties of materials obtained by the method of the present invention, the conventional method, the ultra-quenching method, etc. Figure 1, 2nd page o, al B (KG), 10,000,000,000,000,000,000,000,000,000,000 (T), 3rd ward, 4, 1, 5, 1, 3, 3, 4, 1 Yo, 5, 3 (T), 7th page, ζC, f3 (KG Noi ÷ = Bi Fig. 5 J Toyo L gate (min.) Fig. 6 Fig. 7 (b) B (KG) ', 1 -20 [ Fig. 8 Magnetic flux/g false (T) Fig. 10
Claims (11)
で水素中純化焼鈍を施して、鋼中に残存するAlの化合
物を分解して鋼中から除去する第1工程と、その第1工
程の後に冷間圧延することにより、厚さ150μm以下
の中間極薄帯を作る第2工程、さらに第2工程の後に前
記中間極薄帯を非酸化雰囲気または減圧雰囲気中で高温
熱処理することによつて、(110)〔001〕方位を
有する2次再結晶粒の集合組織からなる極薄帯を作る第
3工程とを経由することを特徴とする低損失方向性ケイ
素鋼極薄帯の製造方法。(1) Non-oriented silicon steel strip material at 1000-1200℃
The first step is to perform purification annealing in hydrogen to decompose and remove Al compounds remaining in the steel, and after that first step, cold rolling is performed to form an intermediate material with a thickness of 150 μm or less. A second step of producing an ultra-thin strip, and further, after the second step, the intermediate ultra-thin strip is subjected to high-temperature heat treatment in a non-oxidizing atmosphere or a reduced pressure atmosphere, thereby producing secondary recrystallization having a (110)[001] orientation. A method for producing an ultra-thin strip of low-loss grain-oriented silicon steel, the method comprising: a third step of producing an ultra-thin strip having a texture of grains.
鋼帯素材中のケイ素含有量が、1.5〜8重量%であり
、かつ第1工程後のAl含有量が0.005重量%以下
であることを特徴とする低損失方向性ケイ素鋼極薄帯の
製造方法。(2) In claim (1), the silicon content in the non-oriented silicon steel strip material is 1.5 to 8% by weight, and the Al content after the first step is 0.005% by weight. % or less.
前記低損失方向性ケイ素鋼極薄帯の圧延方向に対する〔
001〕軸の平均ずれ角度が、2.7度以内の高配向性
を有する低損失方向性ケイ素鋼極薄帯の製造方法。(3) In claim (1) and claim (2),
[ with respect to the rolling direction of the low loss oriented silicon steel ultra-thin strip
001] A method for producing a low-loss oriented silicon steel ultrathin strip having high orientation with an average axis deviation angle of 2.7 degrees or less.
前記非酸化性雰囲気が、不活性ガス雰囲気または水素ガ
ス雰囲気、あるいは水素ガスと不活性ガスの混合雰囲気
であることを特徴とする低損失方向性ケイ素鋼極薄帯の
製造方法。(4) In claim (1) and claim (2),
A method for producing a low-loss grain-oriented silicon steel ultrathin strip, characterized in that the non-oxidizing atmosphere is an inert gas atmosphere, a hydrogen gas atmosphere, or a mixed atmosphere of hydrogen gas and inert gas.
囲気が減圧されていることを特徴とする低損失方向性ケ
イ素鋼極薄帯の製造方法。(5) A method for producing a low-loss grain-oriented silicon steel ultrathin strip according to claim (4), characterized in that the non-oxidizing atmosphere of the gas is under reduced pressure.
持時間が3時間以上に規制されていることを特徴とする
低損失方向性ケイ素鋼極薄帯の製造方法。(6) The method for producing a low-loss grain-oriented silicon steel ultrathin strip according to claim (1), characterized in that the heat treatment holding time in the first step is regulated to 3 hours or more.
1回の圧下率10%以上、トータル圧下率70%以上と
することを特徴とする低損失方向性ケイ素鋼極薄帯の製
造方法。(7) In claim (1), the low-loss grain-oriented silicon steel ultrathin strip is characterized in that the rolling reduction rate in the second step is 10% or more in one round and a total rolling reduction rate of 70% or more. Production method.
前記第3工程の熱処理保持温度が、950〜1100℃
で、熱処理保持時間が、1〜3時間に規制されているこ
とを特徴とする、低損失方向性ケイ素鋼極薄帯の製造方
法。(8) In claim (1) and claim (2),
The heat treatment holding temperature in the third step is 950 to 1100°C
A method for producing a low-loss grain-oriented silicon steel ultrathin strip, characterized in that the heat treatment holding time is regulated to 1 to 3 hours.
前記第3工程の熱処理昇温速度が0.5℃/秒以上であ
ることを特徴とする低損失方向性ケイ素鋼極薄帯の製造
方法。(9) In claim (1) and claim (2),
A method for producing a low-loss grain-oriented silicon steel ultrathin strip, characterized in that the heat treatment temperature increase rate in the third step is 0.5° C./sec or more.
処理保持温度950〜1100℃を得るための昇温過程
において、500℃まで予熱しその後の昇温速度が約0
.5℃/秒以上であることを特徴とする低損失方向性ケ
イ素鋼極薄帯の製造方法。(10) In claim (1), in the temperature raising process for obtaining a heat treatment holding temperature of 950 to 1100 °C in the third step, the temperature is preheated to 500 °C and the subsequent temperature increase rate is approximately 0 °C.
.. A method for producing a low-loss grain-oriented silicon steel ultrathin strip, characterized in that the temperature is 5° C./sec or more.
、前記第3工程後に極薄鋼帯を冷却し、次に極薄鋼帯の
表面に塗膜形成剤を塗布して加熱することにより、被膜
を形成させることを特徴とする低損失方向性ケイ素鋼極
薄帯の製造方法。(11) In claims (1) and (2), the ultra-thin steel strip is cooled after the third step, and then a film forming agent is applied to the surface of the ultra-thin steel strip and heated. 1. A method for producing a low-loss grain-oriented silicon steel ultrathin strip, the method comprising forming a film by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20629888A JPH0257635A (en) | 1988-08-22 | 1988-08-22 | Manufacture of extra thin foil of grain-oriented silicon steel with low core loss |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20629888A JPH0257635A (en) | 1988-08-22 | 1988-08-22 | Manufacture of extra thin foil of grain-oriented silicon steel with low core loss |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0257635A true JPH0257635A (en) | 1990-02-27 |
Family
ID=16520986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20629888A Pending JPH0257635A (en) | 1988-08-22 | 1988-08-22 | Manufacture of extra thin foil of grain-oriented silicon steel with low core loss |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0257635A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5354389A (en) * | 1991-07-29 | 1994-10-11 | Nkk Corporation | Method of manufacturing silicon steel sheet having grains precisely arranged in Goss orientation |
| US7371291B2 (en) | 2001-01-19 | 2008-05-13 | Jfe Steel Corporation | Grain-oriented magnetic steel sheet having no undercoat film comprising forsterite as primary component and having good magnetic characteristics |
| WO2012087016A2 (en) | 2010-12-23 | 2012-06-28 | 주식회사 포스코 | Grain-oriented electric steel sheet having superior magnetic property and method for manufacturing same |
| US10760141B2 (en) | 2014-12-15 | 2020-09-01 | Posco | Grain-oriented electrical steel sheet and manufacturing method of grain-oriented electrical steel sheet |
-
1988
- 1988-08-22 JP JP20629888A patent/JPH0257635A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5354389A (en) * | 1991-07-29 | 1994-10-11 | Nkk Corporation | Method of manufacturing silicon steel sheet having grains precisely arranged in Goss orientation |
| US5489342A (en) * | 1991-07-29 | 1996-02-06 | Nkk Corporation | Method of manufacturing silicon steel sheet having grains precisely arranged in goss orientation |
| US7371291B2 (en) | 2001-01-19 | 2008-05-13 | Jfe Steel Corporation | Grain-oriented magnetic steel sheet having no undercoat film comprising forsterite as primary component and having good magnetic characteristics |
| WO2012087016A2 (en) | 2010-12-23 | 2012-06-28 | 주식회사 포스코 | Grain-oriented electric steel sheet having superior magnetic property and method for manufacturing same |
| US9997283B2 (en) | 2010-12-23 | 2018-06-12 | Posco | Grain-oriented electric steel sheet having superior magnetic property |
| US10760141B2 (en) | 2014-12-15 | 2020-09-01 | Posco | Grain-oriented electrical steel sheet and manufacturing method of grain-oriented electrical steel sheet |
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