JPH0258258A - High frequency integrated circuit - Google Patents

Abstract

PURPOSE:To obtain a small-sized high frequency integrated circuit in which the occupied area of a capacitor is reduced by arranging a recessed part on the rear of an integrated circuit substrate, forming a capacitor part in the recessed part, and connecting the capacitor and a high frequency transistor and a circuit pattern on the surface of the integrated circuit substrate, with conductors penetrating the integrated circuit substrate. CONSTITUTION:In a high frequency integrated circuit provided with a circuit pattern of a high frequency transistor 1, a resistor 2, a capacitor 31, etc., on the same integrated circuit substrate 7, a recessed part 8 is arranged on the rear of the integrated circuit substrate 7. The above capacitor 31 part is formed in the recessed part 8, and the circuit pattern on the upper surface of the substrate 7 and the capacitor 31 are connected by conductors 32 penetrating the integrated circuit substrate 7. Thereby it is enabled that the capacitor pattern which is usually formed on the high frequency integrated circuit and occupies a large area is displaced from the surface to the rear, while electric characteristics become equal to the usual one. Further the restriction of the capacitor pattern is dissolved or reduced by the effect of circuit pattern arrangement on the surface, and the freedom in integrated circuit pattern design can be increased.

Description

[Detailed Description of the Invention] [Industrial Field of Application] This invention is applicable to high frequency band #! It is related to product circuits.

C. Conventional technology] Below, high frequency I! A monolithic microwave actual circuit amplifier (MMIC amplifier) will be described as an example of a product circuit.

FIG. 3 is a plan view showing an example of a conventional MMIG amplifier.

In the diagram shown in Figure B, 1 is a high frequency transistor, 2 is a resistor, 3 is a capacitor, 4 is an input signal terminal, 5 is an output signal terminal, and 6 is the IN! of high frequency transistor 1! ] is a bias bias application terminal, and 71. The integration port where each of these elements is formed! There are 8 boards. .

Next, let's explain the operation of the MMIC amplifier.

The signal applied to the input signal terminal 4 is amplified by the high frequency transistor 1 and taken out from the output signal terminal 5.
Here, the DC bias for operating the i11 frequency transistor 1 is supplied from the DC bias application terminal 6. The capacitor 3 and the resistor 2 are used to impedance match the output impedance of the frequency transistor 1 to a predetermined characteristic impedance. .

[Problem to be solved by the invention] In the conventional MMIG amplifier configured as shown below,
Depending on the characteristics required of the amplifier and the frequency used, a large capacity capacitor 3 may be required. the result,
The area of the capacitor 3 increases, most of the MM (C amplifier pattern) becomes a capacitor pattern, and the cost increases due to the large area of the MMIC chip, and it becomes difficult to design an MMLC circuit due to the large area capacitor pattern arrangement. There were problems such as.

The invention of B was made to solve the above-mentioned problems, and its purpose is to obtain a compact high-frequency integrated circuit in which the area occupied by the capacitor is reduced.

[Means for solving the problem] The high frequency integrated circuit according to the invention of Party B has a 1M integrated circuit board.
Four parts are provided on the surface, a capacitor part is formed in the recessed part, and the capacitor is connected to the high frequency transistor or circuit pattern on the surface of the integrated circuit board by a conductor that passes through the integrated circuit board.

(Function) In this invention, since the capacitor portion is removed from the surface of the integrated circuit board and formed on the back west OH portion of the AM circuit board, the area of the capacitor pattern that occupied the surface of the iJL circuit board is reduced. Ru.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawing '.

. 1 is a plan view of an MMIC amplifier showing an embodiment of the present invention, and FIG. 2 is a sectional view taken along line A-A' in FIG.

In these figures, 1 to 7 are the same as in Figure 3, and 8 is the four parts formed on the back side of the circuit board 7, and a capacitor 31 is formed within these four parts 8. , ij4 integrated circuit board 7 is electrically connected to the high frequency transistor 1 and other circuit patterns on the integrated circuit board 7 by a conductor 32 penetrating the integrated circuit board 7.

With this configuration, the capacitor pattern, which was conventionally formed on a high-frequency integrated circuit and occupied a wide area, can be moved from the surface to JMifi'i and become iIJ(m), and the electrical characteristics are the same as the conventional example. 1.Furthermore, restrictions on capacitor patterns are eliminated or reduced in the circuit pattern arrangement on the surface, improving the degree of freedom in integrated circuit pattern design.

It should be noted that although the above embodiments have been described with respect to the MMIG amplifier, the present invention is not limited to this, and it goes without saying that the same effects can be achieved even if the present invention is applied to other high frequency integrated circuits.

〔Effect of the invention〕

As explained above, in this invention, among the circuit patterns formed on the integrated circuit board, the capacitor portions are formed on the four parts provided on the back surface of the integrated circuit board, which makes it possible to reduce the size of the integrated circuit pattern. This has the advantage that a compact and inexpensive high frequency integrated circuit can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a plan view without showing the chip pattern of an MM[C amplifier according to an embodiment of the present invention, and FIG. 2 is an A-A in FIG.
Figure 3 is a plan view showing the chip pattern of a conventional MMI (amplifier). In the figure, 1 is a high-frequency transistor, 2 is a resistor, and 4
is an input signal terminal, 5 is an output signal terminal, 6 is a 1α current bias application terminal of the transformer, 7 is an integrated circuit board, 8 is a recess, 31 is a capacitor formed in the recess, 32f; tQ
It is a conductor that penetrates a four-layer circuit board. In addition, the same reference numerals in each figure indicate the same or corresponding parts. Agent: Masuo Oiwa (2 others) Figure η Figure η Jindenhou Figure

Claims (1)

[Claims] In a high-frequency integrated circuit in which circuit patterns such as a high-frequency transistor, a resistor, and a capacitor are provided on the same integrated circuit board, a recess is provided on the back surface of the integrated circuit board, the capacitor portion is formed in this recess, and the integrated circuit A high-frequency integrated circuit, characterized in that a circuit pattern on an upper surface of the substrate and the capacitor are connected by a conductor penetrating the integrated circuit substrate.