JPH026091A - Laser beam processing device - Google Patents

Laser beam processing device

Info

Publication number
JPH026091A
JPH026091A JP63156473A JP15647388A JPH026091A JP H026091 A JPH026091 A JP H026091A JP 63156473 A JP63156473 A JP 63156473A JP 15647388 A JP15647388 A JP 15647388A JP H026091 A JPH026091 A JP H026091A
Authority
JP
Japan
Prior art keywords
length
fuse
laser beam
side direction
cut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63156473A
Other languages
Japanese (ja)
Other versions
JP2633306B2 (en
Inventor
Katsuhiko Tsuura
克彦 津浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP63156473A priority Critical patent/JP2633306B2/en
Publication of JPH026091A publication Critical patent/JPH026091A/en
Application granted granted Critical
Publication of JP2633306B2 publication Critical patent/JP2633306B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Laser Beam Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To improve the quality of laser beam cutting and to miniaturize the processing device by forming the irradiation region of laser light to the length at which cutting is possible in the short side direction of an object to be cut and to the length shorter than the length of the short side direction in the long side direction. CONSTITUTION:The irradiation region A of the laser light to a fuse 11 is set at the time of cutting the fuse 11, etc., by using the processing laser light 12. Namely, the region is so set as to have the length X at which the fuse 11 can be cut in the direction along the short side of the fuse and the length Y shorter than the length X in the direction along the long side. Since the length Y along the long side direction of the fuse 11 can be shortened in this way, the length l1 of the fuse 11 is shortened. The disposition area of the fuse part 11 is, therefore, reduced as a whole. Further, the generation of the uncut part is prevented, as the length X in the short side direction is determined as the cuttable length. The quality of the laser cutting is thus improved and the processing device is miniaturized.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体集積回路の配線を高精度で切断加工す
るレーザ加工装置に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a laser processing apparatus for cutting wiring of semiconductor integrated circuits with high precision.

従来の技術 半導体集積回路は、年々微細加工技術が進歩し、高密度
化、高集積化がはかられている。とくに、半導体メモリ
ーは、微細加工による高集積化で、大容量化がはかられ
ている。しかし、半導体チップ面積も増加しており、ダ
ストなどによるパターン欠陥の不良で、歩留りが低下す
る。このため、チップ上の配線やヒユーズを切断して、
不良メモリセルと、前もって同一チツブに設けられてい
る予備のメモリセルとを置き換え、不良を良品化する冗
長救済技術が用いられている。
2. Description of the Related Art Semiconductor integrated circuits are becoming more dense and highly integrated as microfabrication technology advances year by year. In particular, semiconductor memories are becoming more highly integrated through microfabrication, resulting in larger capacities. However, as the area of semiconductor chips increases, yields decrease due to pattern defects caused by dust and the like. Therefore, by cutting the wiring and fuses on the chip,
A redundancy repair technique is used in which a defective memory cell is replaced with a spare memory cell previously provided on the same chip, thereby converting the defective memory cell into a non-defective product.

従来、このヒユーズの切断は第2図(a)に示すように
、長辺方向の長さρ2、短辺方向の長さWのヒユーズ1
に、−辺Cの正方形の照射領域2となるレーザ光や直径
Cの円形の照射領域3となるレーザ光を照射して、加熱
、溶断していた。
Conventionally, this fuse is cut by cutting a fuse 1 having a length ρ2 in the long side direction and a length W in the short side direction, as shown in FIG. 2(a).
Then, a laser beam forming a square irradiation area 2 with side C or a laser beam forming a circular irradiation area 3 with diameter C was irradiated to heat and fuse.

発明が解決しようとする課題 しかしながら、大容量メモリになると同一チツブに設け
られる予備のメモリセルも多くなり、ヒユーズ1の本数
が多くなって、全体としてヒユーズ部分が占める面積が
増大するという問題があった。このヒユーズ部分の占め
る面積を下げるには、ヒユーズ1の長辺方向の長さρ2
と、ヒユーズ1の短辺方向の長さW2を短くシ、ヒユー
ズ間隔を小さくする必要がある。第2図(a)において
、ヒユーズ1の長辺方向の長さρ2は、レーザ光が照射
される長さCと照射するレーザ光の位置合せ誤差に対す
る長辺方向のマージン長2・eで決まる。
Problems to be Solved by the Invention However, as large-capacity memories become available, the number of spare memory cells that are provided on the same chip increases, and the number of fuses 1 increases, resulting in the problem that the overall area occupied by the fuse portion increases. Ta. In order to reduce the area occupied by this fuse part, the length of the fuse 1 in the long side direction ρ2
Therefore, it is necessary to shorten the length W2 of the fuse 1 in the short side direction and reduce the fuse interval. In FIG. 2(a), the length ρ2 of the fuse 1 in the long side direction is determined by the length C of the laser beam irradiation and the margin length 2·e in the long side direction for the alignment error of the irradiated laser beam. .

つよりρ2=C+2・eである。また、ヒユーズ1の短
辺方向の長さW2は、最少マスクルールにしたがい、ヒ
ユーズ1の間隔は、照射されるレーザ光のヒユーズ1の
短辺方向の長さと、位置合せ誤差で決まる。よって、で
きるかぎり、照射されるレーザ光の照射領域の大きさを
小さくすることと、照射するレーザ光の位置合せ誤差を
小さくすれば、ヒユーズ部分の占める面積を下げること
が可能となる。そして、照射するレーザ光の位置合せ誤
差は、ハードの改善により、小さくすることが可能であ
る。
Therefore, ρ2=C+2·e. Further, the length W2 of the fuse 1 in the short side direction is determined according to the minimum mask rule, and the interval between the fuses 1 is determined by the length of the irradiated laser beam in the short side direction of the fuse 1 and an alignment error. Therefore, by reducing the size of the irradiation area of the irradiated laser beam and the alignment error of the irradiated laser beam as much as possible, it is possible to reduce the area occupied by the fuse portion. The alignment error of the irradiated laser beam can be reduced by improving the hardware.

ところが、ヒユーズの長辺方向の長さを短くするために
、第2図(b)のように、照射領域の一辺の長さを短か
くして、Cより短かいdを用いて、dXd角の照射領域
4となるレーザ光や直径dの円形の照射領域5となるレ
ーザ光を用いてヒユーズ切断を行うと、周辺に飛び敗っ
たヒユーズ材料でつながった未切断部分6が生じ、完全
なしニーズ切断ができなくなるという問題があった。
However, in order to shorten the length of the fuse in the long side direction, as shown in Figure 2 (b), the length of one side of the irradiation area is shortened, and d is shorter than C, so that the irradiation is performed at an angle of dXd. When a fuse is cut using a laser beam that forms area 4 or a laser beam that forms a circular irradiation area 5 with diameter d, an uncut portion 6 that is connected by the fuse material that has blown away occurs in the periphery, resulting in complete unnecessary cutting. The problem was that it became impossible to do so.

本発明は上記課題を解決するもので、未切断部分を生じ
ることなく完全なヒユーズ切断を行えるとともに、ヒユ
ーズ部分の配置面積を小さくすることを可能となずレー
ザ加工装置を提供することを目的とする。
The present invention has been made to solve the above-mentioned problems, and an object thereof is to provide a laser processing device that can completely cut a fuse without creating an uncut portion, and also does not make it possible to reduce the arrangement area of the fuse portion. do.

課題を解決するための手段 上記課題を解決するために、本発明は、加工レーザ光の
切断対象物上における照射領域が、前記切断対象物の短
辺に沿う方向に、前記切断対象物を切1tli可能な長
さを有し、前記切断対象物の長辺に沿う方向に、前記の
短辺に沿う方向の長さより短かい長さを有する構成とし
たものである。
Means for Solving the Problems In order to solve the above problems, the present invention provides a method in which the irradiation area of the processing laser beam on the cutting object cuts the cutting object in a direction along the short side of the cutting object. 1tli, and has a length shorter in the direction along the long side of the object to be cut than the length in the direction along the short side.

作用 上記構成により、ヒユーズの長辺方向に沿う照射領域の
長さを雉かくすることによって、照射領域の長さと位置
合せ誤差の和で決定されるヒユーズの長辺方向の長を短
かくして、ヒユーズ部分の配置面積の減少をはかる。そ
して、ヒユーズの短辺方向に沿う照射領域の長さを、切
断対象物を切断可能な長さとすることによって、ヒユー
ズを溶断したときに、周辺に飛び敗ったヒユーズ材料で
未切断部分が形成されることを防止して完全な切断を行
う。
Effect With the above configuration, the length of the irradiation area along the long side direction of the fuse is reduced, thereby shortening the length of the fuse in the long side direction determined by the sum of the length of the irradiation area and the alignment error. Try to reduce the area where the parts are placed. By setting the length of the irradiation area along the short side of the fuse to a length that can cut the object to be cut, when the fuse is blown, an uncut part is formed from the fuse material that has blown away around the fuse. Perform a complete amputation.

実施例 以下、本発明の一実施例を図面に基づいて説明する。第
1図において、長辺方向の長さρ1、短辺方向の長さW
lのヒユーズ11に、加工レーザ光12が照射されてお
り、この加工レーザ光12を照射するレーザ加工装置は
、切断対象物であるヒユーズ11に対する加工レーザ光
12の照射領域Aが、ヒユーズ11の短辺に沿う方向に
、ヒユーズ11を切断可能な長さXを有し、ヒユーズ1
1の長辺に沿う方向に、Xよりも雉かい長さYを有する
ように構成されている。たとえばw1=1.2μmであ
れば、X=4.0μmとなり、Y<4.0μmである。
EXAMPLE Hereinafter, an example of the present invention will be described based on the drawings. In Figure 1, the length in the long side direction is ρ1, and the length in the short side direction is W.
A processing laser beam 12 is irradiated onto the fuse 11 of 1, and the laser processing device that irradiates the processing laser beam 12 is configured so that the irradiation area A of the processing laser beam 12 on the fuse 11, which is the object to be cut, is the same as that of the fuse 11. The fuse 1 has a length X that allows the fuse 11 to be cut in the direction along the short side.
It is configured to have a length Y that is longer than X in the direction along the long side of 1. For example, if w1=1.2 μm, then X=4.0 μm and Y<4.0 μm.

そして、加工レーザ光12は、レーザ光路間に置かれた
長方形状の穴を通して、円形状のレーザ光を長方形状に
形成している。また、照射領域Bのように、楕円形状に
形成するには、円形状のレーザ光をしぼり込んだときに
、楕円形状となるレンズを用いる6 以下、上記構成における作用について説明する。
The processing laser beam 12 passes through a rectangular hole placed between the laser beam paths to form a circular laser beam into a rectangular shape. Further, in order to form an elliptical shape like the irradiation area B, a lens is used which becomes an elliptical shape when the circular laser beam is focused.6 Hereinafter, the operation of the above configuration will be explained.

すなわち、照射領域Aのヒユーズ11の長辺方向に沿う
長さY′?!−短かくすることによって、Y+2・e−
ρ1で決定されるヒユーズ11の長さΩ1を短かくして
、全体としてヒユーズ部分の配置面積の減少をはかる。
That is, the length Y' along the long side direction of the fuse 11 in the irradiation area A? ! -By making it shorter, Y+2・e−
By shortening the length Ω1 of the fuse 11 determined by ρ1, the overall layout area of the fuse portion is reduced.

そして、照射領域Aのヒユーズ11の短辺方向に沿う長
さXを、ヒユーズ11を切断可1指な長さとすることに
よって、ヒユーズ11を?”Rl折したときに、未切断
部分が形成されることを防止して完全な切断を行うこと
ができる。
Then, by setting the length X along the short side direction of the fuse 11 in the irradiation area A to a length that is one finger long enough to cut the fuse 11, the fuse 11 can be cut. ``When Rl-folded, it is possible to prevent the formation of uncut portions and perform complete cutting.

発明の効果 以上述べたように、本発明によれば、加工レーザ光のシ
(((射領域を、切断対象物の長辺方向において、短か
くすることにより、切断対象物の配置面積を小さくして
、レーザ加工するデバイスの面積を小さくすることがで
きる。
Effects of the Invention As described above, according to the present invention, by shortening the irradiation area of the processing laser beam in the long side direction of the object to be cut, the area in which the object to be cut is arranged can be reduced. As a result, the area of the device to be laser processed can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の一実施例のレーザ加工装置のレーザ
光照射領域を示す配置図、第2図は従来のレーザ照射領
域を示す配置図である。 11・・・ヒユーズ、12・・・加工レーザ光、A、B
・・・照射領域。 代理人   森  本  義  私 用2 (b) T) w、X ハ、B−明組@上べ
FIG. 1 is a layout diagram showing a laser beam irradiation area of a laser processing apparatus according to an embodiment of the present invention, and FIG. 2 is a layout diagram showing a conventional laser irradiation area. 11...Fuse, 12...Processing laser beam, A, B
...irradiation area. Agent Yoshi Morimoto Private 2 (b) T) w,

Claims (1)

【特許請求の範囲】[Claims] 1、加工レーザ光の切断対象物上における照射領域が、
前記切断対象物の短辺に沿う方向に、前記切断対象物を
切断可能な長さを有し、前記切断対象物の長辺に沿う方
向に、前記の短辺に沿う方向の長さより短かい長さを有
するレーザ加工装置。
1. The irradiation area of the processing laser beam on the cutting target is
It has a length in the direction along the short side of the object to be cut that allows the object to be cut, and has a length in the direction along the long side of the object to be cut that is shorter than the length in the direction along the short side of the object to be cut. Laser processing equipment with length.
JP63156473A 1988-06-23 1988-06-23 Laser processing method Expired - Fee Related JP2633306B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63156473A JP2633306B2 (en) 1988-06-23 1988-06-23 Laser processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63156473A JP2633306B2 (en) 1988-06-23 1988-06-23 Laser processing method

Publications (2)

Publication Number Publication Date
JPH026091A true JPH026091A (en) 1990-01-10
JP2633306B2 JP2633306B2 (en) 1997-07-23

Family

ID=15628521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63156473A Expired - Fee Related JP2633306B2 (en) 1988-06-23 1988-06-23 Laser processing method

Country Status (1)

Country Link
JP (1) JP2633306B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7179726B2 (en) 1992-11-06 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186984U (en) * 1984-05-19 1985-12-11 三洋電機株式会社 light condensing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186984U (en) * 1984-05-19 1985-12-11 三洋電機株式会社 light condensing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7179726B2 (en) 1992-11-06 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process

Also Published As

Publication number Publication date
JP2633306B2 (en) 1997-07-23

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