JPH0261816A - Magnetic storage body, manufacturing method, and magnetic storage device - Google Patents

Magnetic storage body, manufacturing method, and magnetic storage device

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Publication number
JPH0261816A
JPH0261816A JP21118988A JP21118988A JPH0261816A JP H0261816 A JPH0261816 A JP H0261816A JP 21118988 A JP21118988 A JP 21118988A JP 21118988 A JP21118988 A JP 21118988A JP H0261816 A JPH0261816 A JP H0261816A
Authority
JP
Japan
Prior art keywords
medium
magnetic medium
metal
metal magnetic
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21118988A
Other languages
Japanese (ja)
Inventor
Tetsuo Nakagawa
中川 哲男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
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Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP21118988A priority Critical patent/JPH0261816A/en
Publication of JPH0261816A publication Critical patent/JPH0261816A/en
Pending legal-status Critical Current

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  • Lubricants (AREA)
  • Magnetic Record Carriers (AREA)

Abstract

PURPOSE:To improve corrosion resistance and durability and to reduce coefficient of friction against a head by laminating specified five-layered coating film on a substrate. CONSTITUTION:The medium consists of the substrate and the five-layered coating film laminated thereon. The five layers are metal magnetic medium, an oxide film of the element which constitutes this magnetic medium, a film of at least one material selected from carbides, oxides, nitrides and carbon, a condensation polymerization film of organic metal compound the molecule of which as a hydrolytic group in one end and at least one kind of functional group among amino groups and imino groups in the other end, and at least one metal salt of fatty acid with Li, Na, K, Cs or Mg. By this method, not only corrosion resistance but durability of the medium is improved because the metal magnetic medium is not affected by heat or humidity. The medium can be minimized and a coefficient of friction against a head is reduced. Reliability of a magnetic recording device using this medium is also improved.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は磁気記憶装置(磁気ディスク装置、磁気ドラム
装置及び磁気テープ装置)及び、該6n気記憶装置に用
いられる磁気記憶体(以下、記憶体と呼ぶ)及びその製
造方法に関する。
Detailed Description of the Invention [Field of Industrial Application] The present invention relates to magnetic storage devices (magnetic disk devices, magnetic drum devices, and magnetic tape devices) and magnetic storage bodies (hereinafter referred to as storage devices) used in the 6N storage devices. body) and its manufacturing method.

[従来の技術] 金属磁性媒体(以下、金属媒体と呼ぶ)を有する記憶体
に於いては、記録再生ヘッド(以下、へラドと呼ぶ)と
の接触に耐久るだけの充分な機械的信頼性と水分、塩素
等の方食環境に充分耐える耐食性が要求される。
[Prior Art] A storage body having a metal magnetic medium (hereinafter referred to as a metal medium) has sufficient mechanical reliability to withstand contact with a recording/reproducing head (hereinafter referred to as a head). Corrosion resistance is required to withstand corrosive environments such as moisture and chlorine.

従来より基板はアルマイト処理やN1−Pメ・ンキ等の
非磁性メツキ処理後、鏡面化やすし目付けのための研磨
が施こされたAI2合金基板、ガラス板やセラミック板
等が用いられ、次にN1−P、N1−Cu−P等の非磁
性メツキやCr、Bi等の被覆の有無の後、強磁性金属
媒体を被覆し、更にSiO2(ポリケイ酸を含む)、7
)t[N、c、5iiN4とAI2□03の固溶体等の
保護膜が被覆され、カップリング剤を用いた中間層の有
無の後パーフロロポリエーテルに代表される液体潤滑剤
や高級アルコールや脂肪酸に代表される固体潤滑剤の薄
層が被覆される。
Conventionally, the substrates used are AI2 alloy substrates, glass plates, ceramic plates, etc., which have been subjected to alumite treatment or non-magnetic plating treatment such as N1-P coating, and then polished to give them a mirror finish or surface finish. After non-magnetic plating such as N1-P, N1-Cu-P and coating with Cr, Bi, etc., a ferromagnetic metal medium is coated, and further SiO2 (including polysilicic acid), 7
)t[N, c, 5iiN4 and AI2□03 solid solution is coated with a protective film, and after the presence or absence of an intermediate layer using a coupling agent, a liquid lubricant such as perfluoropolyether, higher alcohol, or fatty acid is coated. A thin layer of solid lubricant is coated.

上記記憶体は一応の耐久性能を有し、既に市場に出回り
始めているものの大きな欠点を、有している。
Although the above-mentioned memory bodies have a certain level of durability and have already begun to appear on the market, they have major drawbacks.

上記記憶体を搭載した磁気記憶装置を40℃80%R,
H,の環境下に放置すると記憶体1枚の1〜2ケ所に方
食点が発生し、ディフェクトエラーに至る。又記憶体と
ヘッドとの接触を繰り返すことにより、両者間の摩擦係
数が増大し、スピンドルモーターがしばしば停止に至っ
た。
A magnetic storage device equipped with the above storage body was heated at 40℃80%R.
If left in an environment of H., galling points will occur in one or two places on one memory body, leading to a defect error. Furthermore, repeated contact between the storage body and the head increased the coefficient of friction between them, often causing the spindle motor to stop.

[発明が解決しようとする課題] 従来の技術では、金属媒体の耐食性を充分に確保できず
、又記憶体とヘッド間の機械的信頼性を充分に確保でき
ないという課題を有していた。
[Problems to be Solved by the Invention] Conventional techniques have had the problem of not being able to sufficiently ensure the corrosion resistance of the metal medium, and also not being able to sufficiently ensure the mechanical reliability between the storage body and the head.

本発明は上記の課題を解決するものであり、その目的と
するところは、水分や塩素等の環境下に於ける金属媒体
の耐食性を飛躍的に向上させるとともK、記憶体とヘッ
ド間の摩擦係数を大幅に低減し、且つその効果を長期に
維持しつる信頼性に優れた記憶体の製造、提供と該記憶
体を用いた磁気記憶装置を提供することにある。
The present invention solves the above problems, and its purpose is to dramatically improve the corrosion resistance of metal media in environments containing moisture, chlorine, etc. It is an object of the present invention to manufacture and provide a highly reliable memory body that has a significantly reduced coefficient of friction, maintains its effect for a long period of time, and to provide a magnetic memory device using the memory body.

〔課題を解決するための手段] 本発明は基体上に金属媒体が被覆され、該金属媒体上に
該金属媒体を構成する元素の酸化物の薄膜が被覆され、
次に炭化物、窒化物、酸化物或いは炭素から選ばれる少
なくとも1種の物質より成る薄膜が被覆され1次に分子
の一方に加水分解性基を有し、他方にアミノ基或いはイ
ミノ基の少なくとも1種の官能基を有する有機金属化合
物の重縮合膜が被覆され、更に脂肪酸とLi、Na、K
、Ca、Mgとの金属塩の少なくとも1種を被覆せしめ
た事を特徴とする。
[Means for Solving the Problems] The present invention provides a method in which a metal medium is coated on a substrate, a thin film of an oxide of an element constituting the metal medium is coated on the metal medium,
Next, a thin film made of at least one substance selected from carbide, nitride, oxide, or carbon is coated, and the first molecule has a hydrolyzable group on one side and at least one amino group or imino group on the other side. A polycondensation film of organometallic compounds having various functional groups is coated, and fatty acids and Li, Na, K
, Ca, and Mg.

金属媒体は従来技術と同様の材料そして製法によって被
覆する事が出来る。C01Fe、Ni、Cr、Ta、P
、貴金属元素等から成る金属を湿式メツキ法やスパッタ
リング法に代表される乾式成膜法で被覆形成する。
The metal media can be coated using materials and methods similar to those of the prior art. C01Fe, Ni, Cr, Ta, P
, a coating is formed using a dry film forming method such as a wet plating method or a sputtering method using a metal made of a noble metal element or the like.

該金属媒体を構成する元素の酸化物は、Co3O4、F
ex Ox 、CrO3、Ta205.P2O5等に代
表されるがPVD法やCVD法等の乾式成膜法や有機金
属化合物の熱分解法等の湿式成膜法又は、酸素ガスを含
むガス体のプラズマに金属媒体をさらす酸化処理法や、
熱酸化或いは過酸化水素水等の酸化剤による表面酸化処
理法で酸化膜を成長形成させる事も可能であり、その膜
厚は50〜200人が適切である。
The oxides of elements constituting the metal medium include Co3O4, F
ex Ox, CrO3, Ta205. Dry film-forming methods such as PVD and CVD, which are typified by P2O5, wet film-forming methods such as thermal decomposition of organometallic compounds, or oxidation treatment methods in which the metal medium is exposed to plasma of a gas containing oxygen gas. or,
It is also possible to grow and form an oxide film by thermal oxidation or a surface oxidation treatment method using an oxidizing agent such as hydrogen peroxide, and the appropriate thickness is 50 to 200.

炭化物、窒化物、酸化物は、Aj2、B、Y、Si、T
i、Zr、Hf、Nb、Ta、Cr、Mo、Wから選ば
れる元素の化合物であり、その混合や積層化は任意であ
る。炭素はグラファイト、ダイヤモンド、アモルファス
(i−カーボンを含む)の単独、混合、積層であり、い
ずれも100〜400人の膜厚が適切である。上記化合
物及び炭素はスパッタリング法、イオンブレーティング
法等のPVD法やCVD法で被覆形成可能であり、更に
酸化物は有機金属化合物の熱分解法によっても被覆形成
が可能である。
Carbides, nitrides, oxides are Aj2, B, Y, Si, T
It is a compound of elements selected from i, Zr, Hf, Nb, Ta, Cr, Mo, and W, and the mixing and lamination thereof are arbitrary. The carbon may be graphite, diamond, or amorphous (including i-carbon) alone, mixed, or laminated, and a film thickness of 100 to 400 carbon is appropriate for each. The above-mentioned compounds and carbon can be coated by a PVD method or CVD method such as a sputtering method or an ion blasting method, and the oxide can also be coated by a thermal decomposition method of an organometallic compound.

分子の一方に加水分解性基を有し、他方にアミノ基或い
はイミノ基の少なくとも1種の官能基を有する有機金属
化合物は下記−数式で表わされる。
An organometallic compound having a hydrolyzable group on one side of the molecule and at least one functional group such as an amino group or an imino group on the other side is represented by the following formula.

R’  e −M −(OR)  m −42ここでR
゛はアミノ基或いはイミノ基の少なくとも1種の官能基
を有する有機基であり、Rは炭素数1〜5のアルキル基
である。又Mは、Si、Ti、Zr、Nb、Hf、Nb
、Ta等の金属元素であり、mは各々の金属元素を価数
である。又βは1から(m−1)までの整数である。
R' e −M −(OR) m −42 where R
゛ is an organic group having at least one functional group such as an amino group or an imino group, and R is an alkyl group having 1 to 5 carbon atoms. Also, M is Si, Ti, Zr, Nb, Hf, Nb
, Ta, etc., and m is the valence of each metal element. Further, β is an integer from 1 to (m-1).

代表的は有機金属化合物を、以下に示す。Representative organometallic compounds are shown below.

Nt(*−(CH2) x−NH−(CH213−3i
−(OCR,l 3CH。
Nt(*-(CH2) x-NH-(CH213-3i
-(OCR, l 3CH.

NH2−(CH2) 2−NH−((:Hz) z−3
L−fOcH3) 2NH2−fcHz) a−NH−
[CH21t−NH−fcHil 2−3i−fOにH
a) sこれらは、いずれも、アルコール等の可溶性溶
媒に希釈され、スプレー法、スピンナー法、ディッピン
グ法やパイロゾル法等の既知の方法で塗布後焼成により
重縮合膜とする。濃度は得ない膜厚により決定され、膜
厚は単分子厚みでも充分であり、200人前後以下の厚
膜でも問題はない。又焼成は60°C〜200°C15
分〜20分で充分である。
NH2-(CH2) 2-NH-((:Hz) z-3
L-fOcH3) 2NH2-fcHz) a-NH-
[H to CH21t-NH-fcHil 2-3i-fO
a) s All of these are diluted with a soluble solvent such as alcohol, and then applied and baked to form a polycondensation film by a known method such as a spray method, a spinner method, a dipping method, or a pyrosol method. The concentration is determined by the thickness of the film that cannot be obtained, and a film thickness of a single molecule is sufficient, and a film thickness of about 200 molecules or less is not problematic. Also, firing is at 60°C to 200°C15
Minutes to 20 minutes is sufficient.

脂肪酸とLi、Na、K、Ca、Mgとの金属塩は、ス
テアリン酸金属塩やオレイン酸金属塩等であるが、脂肪
酸は直鎖、分枝又飽和、不飽和の制限は無い。これらは
、メタノール等の可溶性溶媒に溶解、希釈され、スピン
ナー法、ディッピング法、スプレー法やパイロゾル法等
の湿式法や真空蒸着法で形成され、必要に応じて加熱処
理を施こす、膜厚は数10Å以下で充分である。
Metal salts of fatty acids and Li, Na, K, Ca, Mg include stearate metal salts, oleate metal salts, etc., but the fatty acids are not limited to being linear, branched, saturated, or unsaturated. These are dissolved and diluted in a soluble solvent such as methanol, and formed by a wet method such as a spinner method, dipping method, spray method, or pyrosol method, or vacuum evaporation method, and are heat-treated as necessary. A thickness of several tens of angstroms or less is sufficient.

[作 用1 本発明によれば、耐食性に劣る金属媒体上K、該金属媒
体との密着性に優れる絶縁性の該金属媒体を構成する元
素の酸化物の薄膜が被覆される。
[Function 1] According to the present invention, a metal medium having poor corrosion resistance is coated with a thin film of an oxide of an element constituting the insulating metal medium having excellent adhesion to the metal medium.

該薄膜は文字通り薄くピンホールレス化する事は困難で
あることから、更に異なる化合物或いは炭素から成る薄
膜を積層化する。この積層化により、同一膜厚の場合に
於けるピンホールの発生度合いを激減化することが可能
になり、水分や塩素等の方食因子から金属媒体を保護す
る。
Since it is literally difficult to make the thin film thin and pinhole-free, thin films made of different compounds or carbon are laminated. This lamination makes it possible to drastically reduce the occurrence of pinholes in the case of the same film thickness, and protects the metal medium from erosion factors such as moisture and chlorine.

次に分子の一方の加水分解性基は、化合物及び炭素の薄
膜の畳表面子存在するOH基やCOOH基と脱水縮合反
応し、又他方のアミノ基或いはイミノ基は、次に被覆さ
れる弗素化ポリエーテル重合体のカルボキシル基との親
和力が強い。その結果ヘッドの衝撃摩擦が繰り返されて
も、潤滑能に優れた脂肪酸の金属塩は記憶体表面から除
去されず、その効果を長期に維持する。
Next, the hydrolyzable group on one side of the molecule undergoes a dehydration condensation reaction with the OH or COOH groups present on the surface of the compound and carbon thin film, and the amino or imino group on the other side undergoes a dehydration condensation reaction with the fluorinated group that is then coated. Strong affinity with carboxyl groups of polyether polymers. As a result, even if the impact friction of the head is repeated, the metal salt of fatty acid, which has excellent lubricating ability, is not removed from the surface of the storage medium and maintains its effect for a long period of time.

以上により長期機械的信頼性及び保存信頼性に優れた記
憶体の製造、提供が可能になり、更に該記憶体を用いる
ことにより磁気記憶装置の長期信頼性は著るしく向上し
た。
As described above, it has become possible to manufacture and provide a memory body with excellent long-term mechanical reliability and storage reliability, and furthermore, by using this memory body, the long-term reliability of a magnetic memory device has been significantly improved.

[実 施 例1 鏡面仕上げされたディスク状アルミニウム合金基板上に
非m性N1−P合金メツキを約15μm厚に施こした後
、研磨により表面粗度Ra=70〜120人、Rmax
=700〜1500人1こ表面すし目付は加工し、更に
Co−N1−P合金メツキを約0.05μm厚に施こし
た。
[Example 1] After applying non-metallic N1-P alloy plating to a thickness of approximately 15 μm on a mirror-finished disc-shaped aluminum alloy substrate, polishing was performed to obtain a surface roughness of Ra = 70 to 120, Rmax
= 700 to 1500 people 1 The surface was processed to have a grain size, and Co-N1-P alloy plating was applied to a thickness of about 0.05 μm.

次にサンプルAは、250℃で1時間、大気雰囲気下で
焼成した。サンプルBは、p)(92H20,z I 
Vo 1%水溶液(液温60’C)に1時間浸漬した。
Sample A was then fired at 250° C. for 1 hour in an air atmosphere. Sample B is p) (92H20,z I
It was immersed in a 1% Vo aqueous solution (liquid temperature 60'C) for 1 hour.

サンプルCは、リアクティブエツチング装置を用い、導
入ガスを酸素として0.2t o r r 0.5W/
cm”のRH印加放電中に1分間さらした。サンプルD
はマグネトロンスパッタ装置を用い導入ガスをArと酸
素の混合(圧力比49対1)とし5X10−’torr
の雰囲気でRF印加放電(4W/cm”)をNiターゲ
ットに加え、1分間スパック成膜した。各々の酸化物の
厚みは、はぼ100人であった。尚、未処理品をサンプ
ルEとする。
Sample C was prepared by using a reactive etching device and using oxygen as the introduced gas at 0.2 t or r 0.5 W/
Sample D
A magnetron sputtering device was used, and the introduced gas was a mixture of Ar and oxygen (pressure ratio 49:1) at 5X10-'torr.
RF applied discharge (4W/cm") was applied to the Ni target in an atmosphere of do.

サンプルA、B、C,Eは、マグネトロンスパッタ装置
を用い、第1表に示したターゲット、条件で尚パワー密
度は4 W / cm”で成膜した。サンプルD、Eは
、下記処理液(液温25°C)を用いディッピング法(
10am/ min )で塗布後、200°Cで10分
間焼成し、200人厚0酸化物系の薄膜を被覆した。
Samples A, B, C, and E were deposited using a magnetron sputtering device using the target and conditions listed in Table 1 at a power density of 4 W/cm. Samples D and E were deposited using the following treatment solution ( Using the dipping method (liquid temperature 25°C)
After coating at a speed of 10 am/min), it was baked at 200°C for 10 minutes to coat a 200 mm thick oxide-based thin film.

処理液組成 次に第2表に示す有機金属化合物をフロン113とメタ
ノール(混合体積比3対1)に0005W/V%の濃度
で溶解しく液温25℃)、ディッピング法(10cm/
 min )で焼成し、その後110℃で10分間焼成
した。
Treatment liquid composition Next, the organometallic compound shown in Table 2 was dissolved in Freon 113 and methanol (mixing volume ratio 3:1) at a concentration of 0005 W/V% (liquid temperature 25°C), dipping method (10 cm/
min ) and then at 110° C. for 10 minutes.

更に第2表に示す脂肪酸の金属塩をメタノールとフロン
113の混合溶媒(体積比1;3)に0.03W/V%
の濃度で溶解しく液温20℃)、ディッピング法(10
cm/ min )で塗布し、その後、80℃で10分
間焼成し、はぼ20人0に被覆した。尚膜厚は段差測定
法かエリプソメトリ−法により測定した。
Furthermore, 0.03 W/V% of the fatty acid metal salt shown in Table 2 was added to a mixed solvent of methanol and Freon 113 (volume ratio 1:3).
(liquid temperature: 20℃), dipping method (10℃)
cm/min), and then baked at 80° C. for 10 minutes, and coated on a surface of 20 cm/min. The film thickness was measured by the step measurement method or the ellipsometry method.

第2表 第1表 上記製造方法により作製した記憶体と、3370タイプ
の薄膜ヘッド(フライハイド0,15μm、9m/5e
c)を用い磁気記憶装置を作製し、下記試験によって評
価した。結果は第3表に示す。
Table 2 Table 1 Memory body manufactured by the above manufacturing method and 3370 type thin film head (Flyhide 0.15μm, 9m/5e
A magnetic storage device was produced using c) and evaluated by the following test. The results are shown in Table 3.

(1)C5Sii1久試験 C3S動作(立ち上がり、立ち下がり時間10sec)
前後の外観変化、静摩擦係数と出力の低下率を求める。
(1) C5Sii 1-year test C3S operation (rise and fall time 10 seconds)
Determine the change in appearance before and after, the coefficient of static friction, and the rate of decrease in output.

(2)耐食性試験 80°C190%R,H,の環境下に放置して、放置時
間の経過をおって、ミッシングピット数を測定し、その
増加が認められた時点を寿命と判断した。
(2) Corrosion Resistance Test The product was left in an environment of 80°C, 190% R, H, and the number of missing pits was measured after the time had elapsed, and the time when the number of missing pits increased was determined to be the end of its life.

[発明の効果1 高記録密度対応の記憶体としての薄膜型記憶体を用いた
6n気記憶装置が登場して久しいが、長期信頼性に対す
る不安からその使用は一部に限られていた。
[Effect of the Invention 1] A 6N memory device using a thin film type memory body as a memory body compatible with high recording density has been on the market for some time, but its use has been limited to a limited number of people due to concerns about long-term reliability.

本発明によれば、加温瀉下で記憶体が用いられても金属
媒体は実用的に何等の影響を受けず、又増々硬質化、低
フライバイト化するヘッドを用いての機械的信頼性が高
いので、更に小型化し、厳しい環境下で用いられる磁気
記憶装置に搭載されても、記憶体、ヘッドはともに特性
劣化は、はとんど認められない。
According to the present invention, even if the storage medium is used under heating, the metal medium will not be affected in any way in practical terms, and the mechanical reliability will be improved even when using heads that are becoming increasingly hard and have low fly bite. Since it is expensive, even if it is further miniaturized and installed in a magnetic storage device used in harsh environments, there will hardly be any noticeable deterioration in the characteristics of both the storage body and the head.

以上の如く、高記録密度対応の高耐久性記憶体の製造、
提供そして該記憶体を用いることにより信頼性の高い磁
気記憶装置の提供が可能になった。
As described above, manufacturing of highly durable memory bodies compatible with high recording density,
By providing and using the storage body, it has become possible to provide a highly reliable magnetic storage device.

以上 出願人 セイコーエプソン株式会社 代理人 弁理士 鈴 木 喜三部(他1名)第3表that's all Applicant: Seiko Epson Corporation Agent: Patent attorney Kisanbe Suzuki (and 1 other person) Table 3

Claims (3)

【特許請求の範囲】[Claims] (1)基体上に金属磁性媒体が被覆され、該金属磁性媒
体上に該金属磁性媒体を構成する元素の酸化物の薄膜が
被覆され、次に炭化物、窒化物、酸化物或いは炭素から
選ばれる少なくとも1種の物質より成る薄膜が被覆され
、次に、分子の一方に加水分解性基を有し、他方にアミ
ノ基或いはイミノ基の少なくとも1種の官能基を有する
有機金属化合物の重縮合膜が被覆され、更に脂肪酸とL
i、Na、K、Ca、Mgとの金属塩の少なくとも1種
を被覆せしめた事を特徴とする磁気記憶体。
(1) A metal magnetic medium is coated on a substrate, a thin film of an oxide of an element constituting the metal magnetic medium is coated on the metal magnetic medium, and then a thin film of an oxide of an element selected from carbide, nitride, oxide, or carbon is coated. A thin film made of at least one substance is coated, and then a polycondensation film of an organometallic compound having a hydrolyzable group on one side of the molecule and at least one functional group such as an amino group or an imino group on the other side. is coated, and further fatty acids and L
1. A magnetic memory body characterized by being coated with at least one metal salt of i, Na, K, Ca, and Mg.
(2)基体上に金属磁性媒体を被覆する工程、そして該
金属磁性媒体上に該金属磁性媒体を構成する元素の酸化
物の薄膜を被覆する工程、次に炭化物、窒化物、酸化物
或いは炭素から選ばれる少なくとも1種の物質より成る
薄膜を被覆する工程、次に分子の一方に加水分解性基を
有し、他方にアミノ基或いはイミノ基の少なくとも1種
の官能基を有する有機金属化合物の重縮合膜を被覆する
工程、更に脂肪酸とLi、Na、K、Ca、Mgとの金
属塩の少なくとも1種を被覆する工程を有する事を特徴
とする磁気記憶体の製造方法。
(2) A process of coating a metal magnetic medium on a substrate, a process of coating the metal magnetic medium with a thin film of an oxide of an element constituting the metal magnetic medium, and then a process of coating a thin film of an oxide of an element constituting the metal magnetic medium, and then a process of coating a metal magnetic medium with a thin film of an oxide of an element constituting the metal magnetic medium, and then a process of coating a metal magnetic medium with a thin film of an oxide of an element constituting the metal magnetic medium. A step of coating a thin film consisting of at least one substance selected from the following: an organometallic compound having a hydrolyzable group on one side of the molecule and at least one functional group such as an amino group or an imino group on the other side; A method for manufacturing a magnetic memory body, comprising the steps of coating a polycondensation film and further coating with at least one metal salt of a fatty acid and Li, Na, K, Ca, or Mg.
(3)第1項記載の磁気記憶体を用いた事を特徴とする
磁気記憶装置。
(3) A magnetic storage device characterized by using the magnetic storage body according to item 1.
JP21118988A 1988-08-25 1988-08-25 Magnetic storage body, manufacturing method, and magnetic storage device Pending JPH0261816A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21118988A JPH0261816A (en) 1988-08-25 1988-08-25 Magnetic storage body, manufacturing method, and magnetic storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21118988A JPH0261816A (en) 1988-08-25 1988-08-25 Magnetic storage body, manufacturing method, and magnetic storage device

Publications (1)

Publication Number Publication Date
JPH0261816A true JPH0261816A (en) 1990-03-01

Family

ID=16601873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21118988A Pending JPH0261816A (en) 1988-08-25 1988-08-25 Magnetic storage body, manufacturing method, and magnetic storage device

Country Status (1)

Country Link
JP (1) JPH0261816A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002068462A (en) * 2000-08-29 2002-03-08 Onahama Smelting & Refining Co Ltd Conveyor device for cutting out shredder dust

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002068462A (en) * 2000-08-29 2002-03-08 Onahama Smelting & Refining Co Ltd Conveyor device for cutting out shredder dust

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