JPH0261966U - - Google Patents
Info
- Publication number
- JPH0261966U JPH0261966U JP13970688U JP13970688U JPH0261966U JP H0261966 U JPH0261966 U JP H0261966U JP 13970688 U JP13970688 U JP 13970688U JP 13970688 U JP13970688 U JP 13970688U JP H0261966 U JPH0261966 U JP H0261966U
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- reaction tube
- hydride
- source metal
- divided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims 2
- 239000000376 reactant Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の一実施例を示す構成図、第２
図は第１図のＡ―Ａ線断面図、第３図はエピタキ
シヤル成長時の温度プロフアイルを示す図、第４
図は従来の反応管を示す構成図である。
１……基板ホルダ、２……基板、３……族管
、４……仕切り、５……ソースボート、６……ソ
ースメタル、７……族管、８……反応管。
Fig. 1 is a configuration diagram showing one embodiment of the present invention;
The figures are a cross-sectional view taken along the line A-A in Figure 1, Figure 3 is a diagram showing the temperature profile during epitaxial growth, and Figure 4 is a diagram showing the temperature profile during epitaxial growth.
The figure is a configuration diagram showing a conventional reaction tube. DESCRIPTION OF SYMBOLS 1... Substrate holder, 2... Substrate, 3... Group tube, 4... Partition, 5... Source boat, 6... Source metal, 7... Group tube, 8... Reaction tube.
Claims (1)
おいて利用される反応管において、ソースメタル
を載置する領域を複数に仕切り、それぞれの区画
された領域に個別のソースメタル輸送用反応ガス
導入部を有することを特徴とするハイドライドエ
ピタキシヤル成長用反応管。 A reaction tube used in the hydride epitaxial growth of the - group is characterized in that the region on which the source metal is placed is divided into a plurality of regions, and each divided region has an individual reactant gas inlet for transporting the source metal. A reaction tube for hydride epitaxial growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13970688U JPH0261966U (en) | 1988-10-26 | 1988-10-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13970688U JPH0261966U (en) | 1988-10-26 | 1988-10-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0261966U true JPH0261966U (en) | 1990-05-09 |
Family
ID=31403215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13970688U Pending JPH0261966U (en) | 1988-10-26 | 1988-10-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0261966U (en) |
-
1988
- 1988-10-26 JP JP13970688U patent/JPH0261966U/ja active Pending
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