JPH0273722U - - Google Patents
Info
- Publication number
- JPH0273722U JPH0273722U JP15295188U JP15295188U JPH0273722U JP H0273722 U JPH0273722 U JP H0273722U JP 15295188 U JP15295188 U JP 15295188U JP 15295188 U JP15295188 U JP 15295188U JP H0273722 U JPH0273722 U JP H0273722U
- Authority
- JP
- Japan
- Prior art keywords
- diode
- capacitor
- resin case
- voltage
- capacitor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 5
- 239000004743 Polypropylene Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
第１図は本考案のダイオード内蔵コンデンサの
正断面図、第２図は本考案にかかるコンデンサ素
子の要部断面図、第３図および第４図は金属酸化
物半導体電界効果トランジスタモジユールに放電
防止型スナバ回路を付属した場合の電圧波形図お
よび電流波形図、第５図は代表的な放電防止型ス
ナバ回路図、第６図はスイツチング素子のターン
オフ動作の軌跡特性図である。
１：金属化ポリプロピレンフイルム、２：ポリ
プロピレンフイルム、３：アルミニウム箔、４：
メタリコン、５：コンデンサ素子、６：ダイオー
ド、７Ａ，７Ｂ：リード線、８：樹脂ケース、９
Ａ，９Ｂ：Ｌ形の端子、１０：圧着端子付リード
線、１１：放熱シート、１２：ビス、１３：樹脂
、Ｅｄ：直流中間回路電圧、ｌ：主回路インダク
タンス、Ｃｓ：スナバコンデンサ、Ｄｓ：スナバ
ダイオード、Ｌ：負荷、Ｒｓ：放電抵抗、Ｔ：パ
ワートランジスタ、Ｄ：ダイオード、Ｉｏ：フリ
ーホイールダイオードの逆回復電流尖頭値はパワ
ートランジスタのコレクタ電流、Ｉｃ：コレクタ
電流、ＶＣＥＳＰ：スイツチング素子のターンオ
フ動作過程のスパイク電圧、ＶＣＥＰ：スナバコ
ンデンサ端子電圧最終到達電圧値、ＶＣＥ：スナ
バ回路コンデンサ電圧。
Figure 1 is a front cross-sectional view of a capacitor with a built-in diode according to the present invention, Figure 2 is a cross-sectional view of a main part of a capacitor element according to the present invention, and Figures 3 and 4 are a diagram showing a discharge in a metal oxide semiconductor field effect transistor module. A voltage waveform diagram and a current waveform diagram when a prevention snubber circuit is attached, FIG. 5 is a typical discharge prevention snubber circuit diagram, and FIG. 6 is a trajectory characteristic diagram of the turn-off operation of the switching element. 1: Metallized polypropylene film, 2: Polypropylene film, 3: Aluminum foil, 4:
Metallicon, 5: Capacitor element, 6: Diode, 7A, 7B: Lead wire, 8: Resin case, 9
A, 9B: L-shaped terminal, 10: Lead wire with crimp terminal, 11: Heat radiation sheet, 12: Screw, 13: Resin, Ed: DC intermediate circuit voltage, l: Main circuit inductance, Cs: Snubber capacitor, Ds: snubber diode, L: load, Rs: discharge resistance, T: power transistor, D: diode, Io: reverse recovery current peak value of freewheeling diode is collector current of power transistor, Ic: collector current, VCESP: switching element Spike voltage during turn-off operation process, VCEP: final voltage value of snubber capacitor terminal voltage, VCE: snubber circuit capacitor voltage.
Claims (1)
で相互に接続したコンデンサ素子とダイオードと
、該ダイオードの放熱を補助する放熱シートと、
上記コンデンサ素子およびダイオードに直結した
端子と、上記樹脂ケースに充填した樹脂とを備え
たダイオード内蔵コンデンサ。 A resin case, a capacitor element and a diode housed in the resin case and connected to each other by lead wires, and a heat dissipation sheet that assists heat dissipation of the diode.
A capacitor with a built-in diode, comprising a terminal directly connected to the capacitor element and the diode, and a resin filled in the resin case.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988152951U JPH0621230Y2 (en) | 1988-11-24 | 1988-11-24 | Capacitor with built-in diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988152951U JPH0621230Y2 (en) | 1988-11-24 | 1988-11-24 | Capacitor with built-in diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0273722U true JPH0273722U (en) | 1990-06-05 |
| JPH0621230Y2 JPH0621230Y2 (en) | 1994-06-01 |
Family
ID=31428347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988152951U Expired - Fee Related JPH0621230Y2 (en) | 1988-11-24 | 1988-11-24 | Capacitor with built-in diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0621230Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4946159A (en) * | 1972-09-13 | 1974-05-02 |
-
1988
- 1988-11-24 JP JP1988152951U patent/JPH0621230Y2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4946159A (en) * | 1972-09-13 | 1974-05-02 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0621230Y2 (en) | 1994-06-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |