JPH02748U - - Google Patents
Info
- Publication number
- JPH02748U JPH02748U JP1989018990U JP1899089U JPH02748U JP H02748 U JPH02748 U JP H02748U JP 1989018990 U JP1989018990 U JP 1989018990U JP 1899089 U JP1899089 U JP 1899089U JP H02748 U JPH02748 U JP H02748U
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- semiconductor material
- photovoltaic cell
- crucible
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 9
- 238000000151 deposition Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000010261 cell growth Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/006—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/064—Gp II-VI compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
Description
第１図及び第２図は本考案による光電池の成長
装置を示す図、第３図、第４図及び第５図は成長
装置の他の例を示す図、第６図は光電池の光起電
力特性を示す図、第７図は光電池の電圧−電流特
性を示す図、第８図は第６図に示したデバイスの
スペクトル応答を示す図である。 １……スチール製の鐘、２……冷却水循環コイ
ル、３……液体窒素によつて冷却された容器、４
……パイレツクス（商標名）製の鐘、５……液体
窒素循環コイル、６……カドミウム用るつぼ、７
……硫黄用るつぼ、８……インジウム用るつぼ、
９……白金温度計、１０……るつぼ用ヒータ、１
１……薄膜厚さ測定用の圧電石英、１２……るつ
ぼの石英容器、１３……タンタル外層、１４……
シヤツタ、１５，１６……温度制御された試料ホ
ルダ、１７……試料ホルダのアルミニウム板、１
８……試料ホルダ用のヒータ、１９……光電池形
成基板（単結晶又は多結晶性シリコン）、２０…
…硫化カドミウムの薄膜面積を制限するマスクマ
スク、２１……残留雰囲気を検査する質量分光計
、２２……粉末硫化カドミウム用のるつぼ、２３
……ヒータ用タンタルワイヤ、２４……タンタル
ワイヤを絶縁する石英管、２５……熱電対、２６
……スクリーン、２７……カドミウム及び硫黄用
るつぼのアルミニウム容器、２８……るつぼ位置
決め装置、２９，３０……光電池の光起電力特性
曲線、３１，３２……順及び逆バイアス時の光電
池照射における応答曲線。
装置を示す図、第３図、第４図及び第５図は成長
装置の他の例を示す図、第６図は光電池の光起電
力特性を示す図、第７図は光電池の電圧−電流特
性を示す図、第８図は第６図に示したデバイスの
スペクトル応答を示す図である。 １……スチール製の鐘、２……冷却水循環コイ
ル、３……液体窒素によつて冷却された容器、４
……パイレツクス（商標名）製の鐘、５……液体
窒素循環コイル、６……カドミウム用るつぼ、７
……硫黄用るつぼ、８……インジウム用るつぼ、
９……白金温度計、１０……るつぼ用ヒータ、１
１……薄膜厚さ測定用の圧電石英、１２……るつ
ぼの石英容器、１３……タンタル外層、１４……
シヤツタ、１５，１６……温度制御された試料ホ
ルダ、１７……試料ホルダのアルミニウム板、１
８……試料ホルダ用のヒータ、１９……光電池形
成基板（単結晶又は多結晶性シリコン）、２０…
…硫化カドミウムの薄膜面積を制限するマスクマ
スク、２１……残留雰囲気を検査する質量分光計
、２２……粉末硫化カドミウム用のるつぼ、２３
……ヒータ用タンタルワイヤ、２４……タンタル
ワイヤを絶縁する石英管、２５……熱電対、２６
……スクリーン、２７……カドミウム及び硫黄用
るつぼのアルミニウム容器、２８……るつぼ位置
決め装置、２９，３０……光電池の光起電力特性
曲線、３１，３２……順及び逆バイアス時の光電
池照射における応答曲線。
Claims (1)
- ｎ型半導体材料の領域及びこれと緊密に接合さ
れているｐ型半導体材料の領域から成り、両領域
には導電性電極が接触されている光電池において
、ｎ型半導体材料及びｐ型半導体材料は互いに５
％以上異なる格子定数を有し、ｎ型半導体材料は
１％を越えるＩｎを含有したＣｄＳとし、ｐ型半
導体材料はＳｉとし、ｐ型半導体材料は１００な
いし０．０１Ωcmの間の抵抗率を有する単結晶性
及び多結晶性Ｓｉから選ばれたものであり、ｎ型
半導体材料は１．５cm2以上の面積にＣｄＳ及び
Ｉｎの物質を共に蒸着することで成長させられた
こと、及びｎ型半導体材料の薄膜の厚さは２〜１
０μｍの範囲にあることを特徴とする光電池。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT25569/79A IT1163710B (it) | 1979-09-10 | 1979-09-10 | Celle fotovoltaiche |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02748U true JPH02748U (ja) | 1990-01-05 |
Family
ID=11217123
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12477480A Pending JPS5681980A (en) | 1979-09-10 | 1980-09-10 | Photocell |
| JP1989018990U Pending JPH02748U (ja) | 1979-09-10 | 1989-02-22 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12477480A Pending JPS5681980A (en) | 1979-09-10 | 1980-09-10 | Photocell |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US4366337A (ja) |
| JP (2) | JPS5681980A (ja) |
| AU (1) | AU539090B2 (ja) |
| BE (1) | BE885167A (ja) |
| CA (1) | CA1168741A (ja) |
| DE (1) | DE3033203A1 (ja) |
| DK (1) | DK159349C (ja) |
| FR (1) | FR2465319A1 (ja) |
| GB (1) | GB2058452B (ja) |
| IT (1) | IT1163710B (ja) |
| NL (1) | NL8004990A (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009111052A1 (en) * | 2008-03-05 | 2009-09-11 | Global Solar Energy, Inc. | Heating for buffer layer deposition |
| EP2257970A4 (en) | 2008-03-05 | 2015-09-02 | Hanergy Hi Tech Power Hk Ltd | BUFFER LAYER DEPOSITION FOR THIN FILM SOLAR CELLS |
| DE212009000031U1 (de) * | 2008-03-05 | 2010-11-04 | Global Solar Energy, Inc., Tuscon | Vorrichtung zum Aufbringen einer dünnschichtigen Pufferschicht auf einen flexiblen Träger |
| US9252318B2 (en) | 2008-03-05 | 2016-02-02 | Hanergy Hi-Tech Power (Hk) Limited | Solution containment during buffer layer deposition |
| WO2009111055A1 (en) | 2008-03-05 | 2009-09-11 | Global Solar Energy, Inc. | Feedback for buffer layer deposition |
| US20160359070A1 (en) | 2015-06-02 | 2016-12-08 | International Business Machines Corporation | Controllable indium doping for high efficiency czts thin-film solar cells |
| CN115295665A (zh) * | 2022-07-08 | 2022-11-04 | 中山大学 | 一种采用无掺杂发射极的太阳电池及其制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4825268A (ja) * | 1971-08-02 | 1973-04-02 | ||
| JPS498237A (ja) * | 1972-03-23 | 1974-01-24 |
-
1979
- 1979-09-10 IT IT25569/79A patent/IT1163710B/it active
-
1980
- 1980-08-13 US US06/177,597 patent/US4366337A/en not_active Expired - Lifetime
- 1980-08-13 DK DK349780A patent/DK159349C/da not_active IP Right Cessation
- 1980-08-15 AU AU61503/80A patent/AU539090B2/en not_active Ceased
- 1980-08-28 GB GB8027776A patent/GB2058452B/en not_active Expired
- 1980-09-03 NL NL8004990A patent/NL8004990A/nl not_active Application Discontinuation
- 1980-09-03 DE DE19803033203 patent/DE3033203A1/de not_active Withdrawn
- 1980-09-08 FR FR8019360A patent/FR2465319A1/fr active Granted
- 1980-09-09 CA CA000359963A patent/CA1168741A/en not_active Expired
- 1980-09-10 BE BE0/202056A patent/BE885167A/fr not_active IP Right Cessation
- 1980-09-10 JP JP12477480A patent/JPS5681980A/ja active Pending
-
1989
- 1989-02-22 JP JP1989018990U patent/JPH02748U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4825268A (ja) * | 1971-08-02 | 1973-04-02 | ||
| JPS498237A (ja) * | 1972-03-23 | 1974-01-24 |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1163710B (it) | 1987-04-08 |
| GB2058452B (en) | 1983-10-05 |
| NL8004990A (nl) | 1981-03-12 |
| CA1168741A (en) | 1984-06-05 |
| DK159349C (da) | 1991-03-11 |
| FR2465319B1 (ja) | 1985-03-08 |
| IT7925569A0 (it) | 1979-09-10 |
| FR2465319A1 (fr) | 1981-03-20 |
| GB2058452A (en) | 1981-04-08 |
| BE885167A (fr) | 1981-03-10 |
| DK159349B (da) | 1990-10-01 |
| AU6150380A (en) | 1981-03-19 |
| DK349780A (da) | 1981-03-11 |
| JPS5681980A (en) | 1981-07-04 |
| DE3033203A1 (de) | 1981-03-19 |
| US4366337A (en) | 1982-12-28 |
| AU539090B2 (en) | 1984-09-13 |
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