JPH0275723U - - Google Patents
Info
- Publication number
- JPH0275723U JPH0275723U JP15455388U JP15455388U JPH0275723U JP H0275723 U JPH0275723 U JP H0275723U JP 15455388 U JP15455388 U JP 15455388U JP 15455388 U JP15455388 U JP 15455388U JP H0275723 U JPH0275723 U JP H0275723U
- Authority
- JP
- Japan
- Prior art keywords
- reduced pressure
- vapor phase
- phase growth
- growth apparatus
- pressure vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案の実施例１を示す断面図、第２
図は本考案の実施例２を示す断面図、第３図は従
来のＬＰＣＶＤ装置を示す断面図である。
１…ウエーハ、２…反応管、３，８，１０…加
熱炉、４…ガス供給孔、５…排気管、６…排気ポ
ンプ、７，９…金属網、１１，１２…バルブ。
Fig. 1 is a sectional view showing the first embodiment of the present invention;
The figure is a sectional view showing a second embodiment of the present invention, and FIG. 3 is a sectional view showing a conventional LPCVD apparatus. DESCRIPTION OF SYMBOLS 1... Wafer, 2... Reaction tube, 3, 8, 10... Heating furnace, 4... Gas supply hole, 5... Exhaust pipe, 6... Exhaust pump, 7, 9... Metal mesh, 11, 12... Valve.
Claims (1)
を形成する減圧気相成長装置において、ウエーハ
を設置する反応管の排気管路に、排気ガス中に含
まれる未反応ガスを酸化物として処理する高温に
加熱した金属網を有することを特徴とする減圧気
相成長装置。 In a reduced pressure vapor phase growth apparatus that forms thin films on wafers by vapor phase growth under reduced pressure, unreacted gases contained in the exhaust gas are treated as oxides in the exhaust pipe line of the reaction tube in which the wafer is installed. A reduced pressure vapor phase growth apparatus characterized by having a metal mesh heated to a high temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15455388U JPH0275723U (en) | 1988-11-28 | 1988-11-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15455388U JPH0275723U (en) | 1988-11-28 | 1988-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0275723U true JPH0275723U (en) | 1990-06-11 |
Family
ID=31431386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15455388U Pending JPH0275723U (en) | 1988-11-28 | 1988-11-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0275723U (en) |
-
1988
- 1988-11-28 JP JP15455388U patent/JPH0275723U/ja active Pending
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