JPH0275748U - - Google Patents
Info
- Publication number
- JPH0275748U JPH0275748U JP1988155754U JP15575488U JPH0275748U JP H0275748 U JPH0275748 U JP H0275748U JP 1988155754 U JP1988155754 U JP 1988155754U JP 15575488 U JP15575488 U JP 15575488U JP H0275748 U JPH0275748 U JP H0275748U
- Authority
- JP
- Japan
- Prior art keywords
- capacitive
- aperture
- integrated circuit
- capacitive aperture
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Description
第１図は本考案の一実施例の容量部のパターン
図、第２図ａ及びｂは従来の集積回路の一例の容
量部のパターン図及び対応するＡ―Ａ′線断面図
である。
１…シリコン基板、２ａ，２ｂ…方形開孔部、
３ａ，３ｂ…素子間分離拡散層、５…シリコン酸
化膜、６…容量部電極。
FIG. 1 is a pattern diagram of a capacitor section according to an embodiment of the present invention, and FIGS. 2A and 2B are a pattern diagram of a capacitor section of an example of a conventional integrated circuit and a corresponding sectional view taken along the line AA'. 1... Silicon substrate, 2a, 2b... Rectangular opening,
3a, 3b... Inter-element isolation diffusion layer, 5... Silicon oxide film, 6... Capacitor electrode.
Claims (1)
量開孔部の表面に絶縁膜及び導電層を積層する容
量部をメモリセル内に含む集積回路において、前
記容量開孔部が多角形の横断面形状を有している
ことを特徴とする集積回路。 In an integrated circuit including a capacitive part in a memory cell in which a capacitive aperture is provided on one main surface of a semiconductor substrate and an insulating film and a conductive layer are laminated on the surface of the capacitive aperture, the capacitive aperture has a polygonal shape. An integrated circuit having a cross-sectional shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988155754U JPH0275748U (en) | 1988-11-29 | 1988-11-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988155754U JPH0275748U (en) | 1988-11-29 | 1988-11-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0275748U true JPH0275748U (en) | 1990-06-11 |
Family
ID=31433660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988155754U Pending JPH0275748U (en) | 1988-11-29 | 1988-11-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0275748U (en) |
-
1988
- 1988-11-29 JP JP1988155754U patent/JPH0275748U/ja active Pending