JPH0276201A - Thin film resistor for strain gauge - Google Patents
Thin film resistor for strain gaugeInfo
- Publication number
- JPH0276201A JPH0276201A JP63227740A JP22774088A JPH0276201A JP H0276201 A JPH0276201 A JP H0276201A JP 63227740 A JP63227740 A JP 63227740A JP 22774088 A JP22774088 A JP 22774088A JP H0276201 A JPH0276201 A JP H0276201A
- Authority
- JP
- Japan
- Prior art keywords
- strain
- thin film
- strain gauge
- resistance
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000011651 chromium Substances 0.000 description 23
- 238000004544 sputter deposition Methods 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000002772 conduction electron Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、歪による電気抵抗変化を利用した歪ゲージ用
の薄膜抵抗体に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film resistor for strain gauges that utilizes changes in electrical resistance due to strain.
従来、歪ゲージ用薄膜抵抗体は、大きく分けて、金属ま
たは合金の歪抵抗変化を利用したものと、半導体のピエ
ゾ抵抗効果を利用したものの二種類が用いられてきた（
センサ技術νｏ１．５．Ｎα７，４９（１９８５））。Conventionally, thin film resistors for strain gauges have been broadly divided into two types: those that utilize the strain resistance change of metals or alloys, and those that utilize the piezoresistance effect of semiconductors (
Sensor technology νo1.5. Nα7, 49 (1985)).
前者（例えばニッケル（Ｎｉ）−クロム（Ｃｒ）合金）
は、抵抗温度係数が小さいため温度による出力の変動が
小さく、かつ歪抵抗特性の直線性に優れている。しかし
、歪に対する抵抗変化の割合、すなわちゲージ率が低い
という欠点があった。その結果、前者は、ゲージ率が低
いために、歪ゲージのＳ／Ｎ比が小さく高感度の増幅器
を必要とし、歪ゲージの小型化が困難であった。一方、
後者（例えばＳｉ）は、ゲージ率は高いが、抵抗温度係
数が大きく、歪抵抗特性の直線性が悪いという欠点があ
った。その結果、後者は、歪ゲージの出力に直線性を改
善するための増幅器や温度補償回路を必要とし、制御系
が複雑になるという問題があった。さらに、後者は前者
と比べて破壊強度が弱く、高圧用の歪ゲージには不適で
あった。The former (e.g. nickel (Ni)-chromium (Cr) alloy)
Since the resistance temperature coefficient is small, output fluctuations due to temperature are small, and the strain resistance characteristics are excellent in linearity. However, there was a drawback that the ratio of resistance change to strain, that is, the gauge factor was low. As a result, since the former has a low gauge factor, the strain gauge has a small S/N ratio and requires a highly sensitive amplifier, making it difficult to miniaturize the strain gauge. on the other hand,
The latter (for example, Si) has a high gauge factor, but has the drawbacks of a large resistance temperature coefficient and poor linearity of strain resistance characteristics. As a result, the latter requires an amplifier and a temperature compensation circuit to improve the linearity of the strain gauge output, resulting in a complicated control system. Furthermore, the latter had a lower breaking strength than the former, making it unsuitable for high-pressure strain gauges.
すなわち、従来は高感度で機械的強度に優れた歪ゲージ
用薄膜抵抗体は存在しなかった。特に高感度で歪抵抗特
性・抵抗温度特性・機械的強度がともに良好な歪ゲージ
用薄膜抵抗体は開発することが困難であるとされていた
。That is, conventionally, there has been no thin film resistor for strain gauges that has high sensitivity and excellent mechanical strength. In particular, it has been considered difficult to develop thin film resistors for strain gauges that are highly sensitive and have good strain resistance characteristics, resistance temperature characteristics, and mechanical strength.
このような状況下、本発明者等は上記問題点を解決すべ
く鋭意努力を重ねた。本発明者等はスパッタリングによ
ってクロム（Ｃｒ）と酸素と半導体であるシリコン（Ｓ
ｉ）を混合した薄膜が通常の金属・合金では得られない
ゲージ率（ｋ＝５〜１０、通常の金属等は１．５〜３）
を持つことを見出した。したがって、Ｃｒと酸素と半導
体を含んだ薄膜抵抗体を歪ゲージ材として用いれば、高
感度の歪ゲージ材が得られることに到達した。また、発
明者はＣｒへの添加剤である酸素とＳｉ等の半導体がＣ
ｒの伝導電子の流れを妨げる散乱体として作用して、Ｃ
ｒの伝導電子の平均自由行程を制御でき、その結果、抵
抗温度係数を低下することができると考えた。Under these circumstances, the inventors of the present invention have made extensive efforts to solve the above problems. The present inventors used sputtering to combine chromium (Cr), oxygen, and the semiconductor silicon (S).
The thin film mixed with i) has a gauge factor that cannot be obtained with ordinary metals and alloys (k = 5 to 10, 1.5 to 3 for ordinary metals, etc.)
I found out that it has. Therefore, it has been found that a strain gauge material with high sensitivity can be obtained by using a thin film resistor containing Cr, oxygen, and a semiconductor as a strain gauge material. The inventor also discovered that oxygen, which is an additive to Cr, and semiconductors such as Si are
Acting as a scatterer that obstructs the flow of conduction electrons of r, C
It was thought that the mean free path of conduction electrons in r could be controlled, and as a result, the temperature coefficient of resistance could be lowered.
本発明は、高感度で機械的強度に優れた歪ゲージ用薄膜
抵抗体、さらには歪抵抗特性および抵抗温度特性にも優
れた歪ゲージ用の薄膜抵抗体を提供することを目的とす
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film resistor for strain gauges that is highly sensitive and has excellent mechanical strength, as well as a thin film resistor for strain gauges that also has excellent strain resistance characteristics and resistance temperature characteristics.
（第１発明の説明〕
本第１発明（特許請求の範囲に記載の発明）は、物理的
蒸着法または化学的蒸着法によって形成されたＣｒ６０
〜９８原子％、酸素２〜３０原子％、半導体０〜１０原
子％が均一に分布した薄膜であって、膜厚が０．０１〜
１０μｍであることを特徴とする歪ゲージ用薄膜抵抗体
に関するものである。(Description of the first invention) The first invention (the invention described in the claims) is directed to a Cr60 film formed by a physical vapor deposition method or a chemical vapor deposition method.
A thin film with a uniform distribution of ~98 at%, 2-30 at% oxygen, and 0-10 at% semiconductor, and a film thickness of 0.01~
The present invention relates to a thin film resistor for strain gauges characterized by a thickness of 10 μm.
本第１発明に係る歪ゲージ用薄膜抵抗体は、従来ある金
属または合金の歪ゲージに比べ５以上という高いゲージ
率を示す。また、Ｓｉ等の半導体歪ゲージに比べ歪抵抗
の直線性に優れ、抵抗温度係数も±１１００ｐｐ／’Ｃ
以下と小さい。また、１２０°Ｃ前後の温度に長時間保
持しても抵抗変化率がほとんど変わらず優れた高温耐久
性を示す。The thin film resistor for strain gauges according to the first invention exhibits a high gauge factor of 5 or more compared to conventional metal or alloy strain gauges. In addition, it has superior linearity of strain resistance compared to semiconductor strain gauges such as Si, and the temperature coefficient of resistance is ±1100pp/'C.
Small as below. Furthermore, even when kept at a temperature of around 120°C for a long time, the rate of change in resistance hardly changes, showing excellent high-temperature durability.
さらに、従来の金属抵抗体に近い強度が維持されており
、Ｓｉ等の半導体系抵抗体に比べ著しく高い強度を示す
。このような優れた特性を示す理由ははっきり明らかに
されていないが、抵抗温度係数が小さい理由として、酸
素、特に半導体がＣｒの伝導電子の流れを妨げる散乱体
として作用しＣｒの伝導電子の平均自由行程を制御して
いること、組織が極めて微細であること等によるものと
考えられる。また、Ｃｒと添加元素との混合状態が均一
なため高温強度に優れているものと推定される。Furthermore, it maintains strength close to that of conventional metal resistors, and exhibits significantly higher strength than semiconductor-based resistors such as Si. The reason for such excellent characteristics is not clearly clarified, but the reason for the small temperature coefficient of resistance is that oxygen, especially semiconductors, acts as a scatterer that obstructs the flow of conduction electrons in Cr, and the average conduction electrons in Cr are reduced. This is thought to be due to the fact that the free path is controlled and the structure is extremely fine. Furthermore, it is presumed that the high-temperature strength is excellent because the mixing state of Cr and the additive elements is uniform.
したがって、本発明に係る薄膜抵抗体を用いれば、高ゲ
ージ率で高温耐久性に優れた圧力センサ、ロードセル等
への応用も可能である。Therefore, by using the thin film resistor according to the present invention, it is possible to apply it to pressure sensors, load cells, etc. that have a high gauge factor and excellent high-temperature durability.
〔第２発明の説明〕
以下、本第１発明をより具体化した発明（本第２発明と
する）について詳しく説明する。[Description of the Second Invention] Hereinafter, an invention that further embodies the first invention (referred to as the second invention) will be described in detail.
薄膜抵抗体を構成するＣｒの含有量は、６０〜９８原子
％で、酸素の含有量は２〜３０原子％の範囲が望ましい
。これらの範囲外では、高ゲージ率を得るのが困難であ
る。また、半導体はＳｉゲルマニウム（Ｇｅ）、硼素（
Ｂ）等を用いる。半導体の含有量は、高ゲージ率を保ち
良好な歪抵抗特性・抵抗温度特性を得るために、０〜１
０原子％の範囲が望ましい。Ｃｒ、酸素および半導体は
、少なくともμｍオーダー以下でほぼ均一に分布してい
ないと良好な性質は得られない。The content of Cr constituting the thin film resistor is preferably 60 to 98 atomic %, and the content of oxygen is preferably 2 to 30 atomic %. Outside these ranges, it is difficult to obtain a high gauge factor. In addition, semiconductors include Si germanium (Ge), boron (
B) etc. are used. The content of semiconductor is 0 to 1 in order to maintain a high gauge factor and obtain good strain resistance characteristics and resistance temperature characteristics.
A range of 0 atomic % is desirable. Good properties cannot be obtained unless Cr, oxygen, and semiconductor are distributed substantially uniformly at least on the order of μm or less.
膜厚は連続膜を形成でき安定な歪抵抗特性を得るために
、０．０１μｍ以上で、かつ、膜の内部応力による破壊
を防ぐために１０μｍ以下が望ましい。The film thickness is preferably 0.01 μm or more in order to form a continuous film and obtain stable strain resistance characteristics, and 10 μm or less in order to prevent destruction due to internal stress of the film.
本第２発明に係る薄膜抵抗体の製造方法は通常の薄膜形
成に用いられるイオンブレーティング法、スパッタリン
グ法、蒸着法やプラズマＣＶＤ法等のＰＶＤ法あるいは
ＣＶＤ法のいずれを用いてもよい。ただし、Ｃｒ、酸素
と半導体の混合状態を緻密かつ均一にするためには、ス
パッタリング法または蒸着法が望ましい。また、Ｃｒ、
酸素と半導体の混合状態を一層均一にするために、薄膜
形成後、２００〜５００°Ｃで１〜２時間程度の熱処理
を施してもよい。薄膜抵抗体中に酸素を含ませるために
は、スパッタリング等の処理雰囲気中に酸素が含有され
ていなければならないが、スパッタリング等のＰＶＤ法
等において雰囲気中に不純物として含まれている程度の
酸素量でよい。The method for manufacturing the thin film resistor according to the second aspect of the present invention may use any of the PVD methods or CVD methods, such as the ion blasting method, the sputtering method, the vapor deposition method, and the plasma CVD method, which are commonly used for forming thin films. However, in order to make the mixed state of Cr, oxygen, and semiconductor dense and uniform, sputtering method or vapor deposition method is preferable. Also, Cr,
In order to make the mixed state of oxygen and semiconductor more uniform, heat treatment may be performed at 200 to 500° C. for about 1 to 2 hours after forming the thin film. In order to include oxygen in the thin film resistor, oxygen must be contained in the processing atmosphere such as sputtering, but the amount of oxygen that is contained as an impurity in the atmosphere in PVD methods such as sputtering must be reduced. That's fine.
実施例工 第１図に、本実施例によって製作した歪ゲージを示す。 Example work FIG. 1 shows a strain gauge manufactured according to this example.
薄膜抵抗体は、二元同時スパッタリング法により形成し
た。まず、コーニング０３１３ガラス基板１に、トリク
レン煮沸洗浄およびアセトン超音波洗浄を施し、乾燥後
スパッタリング装置内に歪ゲージ用ＳＵＳ製マスクを介
して配置し、装置内で５Ｘ１０”Ｔｏｒｒまで真空排気
した。次に、Ａｒガスを上記装置内に５Ｘ １０−’Ｔ
ｏ ｒ ｒ導入し、ＣｒターゲットにＤＣ３００Ｗ、Ｓ
ｉＯターゲットにＲＦ １００Ｗ （１３，５６ＭＨｚ
）の電力を印加し、６分間スパッタリングを行った。こ
のように製作した抵抗体である歪ゲージ膜２の組成をＸ
ＰＳ、厚さを触針式膜厚計によって調査したところ歪ゲ
ージ膜の組成はＣｒ−２４ａｔ％酸素（０）４ａｔ％シ
リコン（Ｓｔ）膜厚は０．１７μｍであった（表）。歪
ゲージ膜を形成した基板を大気中に取り出し、電極用マ
スクを取り付けた後スパッタリング装置内で前記と同様
の方法で、ＡｕターゲットにＤＣ２５０Ｗの電力を印加
し、１分間のスパッタリングを行い、Ａｕ電極膜３を０
．１μｍ形成した。さらに、大気中で３００℃、ｌｈｒ
の熱処理を施した後、Ａｕ電極にリード線４を半田付け
した。このようにして製作した歪ゲージを用いて特性評
価試験を行った。The thin film resistor was formed by a dual simultaneous sputtering method. First, a Corning 0313 glass substrate 1 was subjected to trichlene boiling cleaning and acetone ultrasonic cleaning, and after drying, it was placed in a sputtering device through a strain gauge SUS mask, and the device was evacuated to 5 x 10” Torr.Next Then, Ar gas was introduced into the above apparatus at 5X 10-'T.
o r r introduced, DC300W, S to Cr target
RF 100W (13,56MHz
) was applied, and sputtering was performed for 6 minutes. The composition of the strain gauge film 2, which is the resistor manufactured in this way, is
When the PS and thickness were investigated using a stylus-type film thickness meter, the composition of the strain gauge film was Cr-24 at% oxygen (0)4 at% silicon (St), and the film thickness was 0.17 μm (Table). The substrate on which the strain gauge film was formed was taken out into the atmosphere, an electrode mask was attached, and then a power of 250 W DC was applied to the Au target in the same manner as described above in the sputtering equipment, sputtering was performed for 1 minute, and the Au electrode was removed. Membrane 3 to 0
．． A thickness of 1 μm was formed. Furthermore, at 300℃ in the atmosphere, lhr
After the heat treatment, the lead wire 4 was soldered to the Au electrode. A characteristic evaluation test was conducted using the strain gauge thus manufactured.
歪ゲージとしての特性評価は、歪抵抗特性、抵抗温度特
性、高温放置試験により行った。第３図は、本実施例に
よって製作した歪ゲージの歪と抵抗変化率の関係を示し
たものである。ゲージ率には歪と抵抗変化率の関係を示
す直線の傾きから求めた。抵抗温度特性は、−３０°Ｃ
から１２０°Ｃまで温度を変化させ、抵抗温度係数ＴＣ
Ｒ（ｐｐｍ７°Ｃ）を測定した。また高温放置試験は、
１２０°Ｃで５００ｈｒ放置した後の抵抗変化率ΔＲ（
％）を測定した。表に評価結果を示す。Characteristics as a strain gauge were evaluated by strain resistance characteristics, resistance temperature characteristics, and high temperature storage tests. FIG. 3 shows the relationship between strain and resistance change rate of the strain gauge manufactured according to this example. The gauge factor was determined from the slope of the straight line showing the relationship between strain and resistance change rate. Resistance temperature characteristics are -30°C
By changing the temperature from 120°C to 120°C, the temperature coefficient of resistance TC
R (ppm 7°C) was measured. In addition, the high temperature storage test
Resistance change rate ΔR after being left at 120°C for 500 hours (
%) was measured. The evaluation results are shown in the table.
実施例２〜４
実施例１と同様の方法で、酸素およびＳｔの組成を変え
て歪ゲージ膜を形成した。表に、歪ゲージ膜の組成・膜
厚を示す。つぎに、実施例１と同様の方法で電極・リー
ド線を取り付けて、実施例１と同様の評価試験を実施し
、表に評価結果を示す。Examples 2 to 4 Strain gauge films were formed in the same manner as in Example 1 by changing the compositions of oxygen and St. The table shows the composition and thickness of the strain gauge film. Next, electrodes and lead wires were attached in the same manner as in Example 1, and the same evaluation test as in Example 1 was conducted, and the evaluation results are shown in the table.
比較例
実施例１と同様、二元スパッタリング法を用いて、組成
がＣｒ−１５ａｔ％０−１３ａｔ％ＳｉおよびＣｒ−２
６ａｔ％０ １２ａｔ％Ｓｔである薄膜抵抗体ならびに
従来使われてきた歪ゲージ材であるＮｉ−ＣｒおよびＳ
ｔをガラス基板上に歪ゲージ膜として形成した。表に組
成・膜厚を示す。次に、実施例１と同様の方法で電極・
リード線を取り付けて歪ゲージを製作し、実施例１と同
様の評価試験を実施した。表に評価結果を示す。また、
Ｎｉ−Ｃｒ合金の歪抵抗特性を第３図に示す。Comparative Example Similar to Example 1, using a binary sputtering method, the composition was Cr-15at%0-13at%Si and Cr-2
Thin film resistors with 6at%0 to 12at%St and conventionally used strain gauge materials Ni-Cr and S
t was formed as a strain gauge film on a glass substrate. The table shows the composition and film thickness. Next, in the same manner as in Example 1, the electrode
A strain gauge was manufactured by attaching lead wires, and the same evaluation test as in Example 1 was conducted. The evaluation results are shown in the table. Also,
Figure 3 shows the strain resistance characteristics of the Ni-Cr alloy.
評価
表かられかるように、本実施例１〜４に係るＣｒと酸素
ならびにＣｒと酸素とＳｉで構成される歪ゲージ膜は、
比較例のＮｉ−Ｃｒ合金と比べて、３〜５．６倍のゲー
ジ率を有する。すなわち、本実施例の歪ゲージは従来の
金属抵抗型歪ゲージよりも感度が数倍も優れていること
が明らかである。As can be seen from the evaluation table, the strain gauge films composed of Cr and oxygen and Cr, oxygen and Si according to Examples 1 to 4 had the following properties:
It has a gauge factor of 3 to 5.6 times that of the Ni-Cr alloy of the comparative example. That is, it is clear that the strain gauge of this example has several times better sensitivity than the conventional metal resistance type strain gauge.
また、Ｃｒ、酸素に対しＳｉを１２％ならびに１３％添
加した比較例５．６はゲージ率が５以下と低く、また、
５ｉ１２％のものは抵抗温度係数も劣っている。これは
、本実施例の歪ゲージでは、Ｃｒに酸素とＳｉが適当量
混合していることにより高いゲージ率を有する薄膜が形
成された効果によるものである。In addition, Comparative Example 5.6 in which 12% and 13% of Si was added to Cr and oxygen had a low gauge factor of 5 or less, and
The one with 12% 5i also has a poor temperature coefficient of resistance. This is due to the effect that in the strain gauge of this example, a thin film having a high gauge factor was formed by mixing appropriate amounts of oxygen and Si with Cr.
さらに、表かられかるようにＣｒと酸素ならびにＣｒと
酸素とＳｉからなる歪ゲージは、比較例のＳｔの歪ゲー
ジと比べ、抵抗温度特性・高温耐久性が優れていること
が明らかである。これは、Ｃｒ中に酸素とＳｔが適当量
混合することにより、Ｃｒの伝導電子の平均自由行程が
短くなり、抵抗温度係数が小さくなったためであると考
えられる。Furthermore, as can be seen from the table, it is clear that strain gauges made of Cr and oxygen and Cr, oxygen and Si have better resistance-temperature characteristics and high-temperature durability than the St strain gauge of the comparative example. This is considered to be because the mean free path of conduction electrons in Cr is shortened by mixing appropriate amounts of oxygen and St in Cr, and the temperature coefficient of resistance is reduced.
また、Ｃｒと酸素とＳｔの混合状態が均一なために、高
温放置しても薄膜は安定であった。また第３図から本実
施例により製作した歪ゲージは直線性を維持したままで
歪感度が著しく改善されていることか明らかである。Furthermore, since the mixed state of Cr, oxygen, and St was uniform, the thin film was stable even when left at high temperatures. Furthermore, from FIG. 3, it is clear that the strain gauge manufactured according to this example has significantly improved strain sensitivity while maintaining linearity.
また、本実施例１および２に係る歪ゲージはＳｉ等の半
導体系の歪ゲージに比し、強度が著しく優れていた。Furthermore, the strain gauges according to Examples 1 and 2 had significantly superior strength compared to strain gauges made of semiconductors such as Si.
第１図は本発明の実施例において用いた歪ゲージの平面
図、第２図は該歪ゲージの断面図、第３図は実施例１と
比較例１の歪−抵抗変化率の関係を求めた図である。Fig. 1 is a plan view of the strain gauge used in the example of the present invention, Fig. 2 is a cross-sectional view of the strain gage, and Fig. 3 shows the relationship between strain and resistance change rate in Example 1 and Comparative Example 1. This is a diagram.
Claims (1)
、Ｃｒ６０〜９８原子％、酸素２〜３０原子％、半導体
０〜１０原子％が均一に分布した薄膜であって、膜厚が
０．０１〜１０μｍであることを特徴とする歪ゲージ用
薄膜抵抗体。A thin film formed by a physical vapor deposition method or a chemical vapor deposition method, in which 60 to 98 atom% of Cr, 2 to 30 atom% of oxygen, and 0 to 10 atom% of semiconductor are uniformly distributed, and the film thickness is 0.01 to A thin film resistor for strain gauges characterized by a thickness of 10 μm.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63227740A JPH0770367B2 (en) | 1988-09-12 | 1988-09-12 | Thin film resistor for strain gauge |
| EP89116555A EP0359132B1 (en) | 1988-09-12 | 1989-09-07 | Thin film resistor for strain gauge |
| DE68911630T DE68911630T2 (en) | 1988-09-12 | 1989-09-07 | Thin film resistance for strain gauges. |
| US07/404,209 US5001454A (en) | 1988-09-12 | 1989-09-07 | Thin film resistor for strain gauge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63227740A JPH0770367B2 (en) | 1988-09-12 | 1988-09-12 | Thin film resistor for strain gauge |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0276201A true JPH0276201A (en) | 1990-03-15 |
| JPH0770367B2 JPH0770367B2 (en) | 1995-07-31 |
Family
ID=16865626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63227740A Expired - Fee Related JPH0770367B2 (en) | 1988-09-12 | 1988-09-12 | Thin film resistor for strain gauge |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770367B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07335911A (en) * | 1994-06-06 | 1995-12-22 | Osaka Prefecture | Pressure sensor integrated with pressure receiving pipe |
| JPH0892730A (en) * | 1994-09-27 | 1996-04-09 | Nok Corp | Production of chromium-oxygen alloy thin film |
| KR100396932B1 (en) * | 1995-03-09 | 2004-06-16 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | A resistive element including a chromium silicide resistive film |
| JP2019074452A (en) * | 2017-10-18 | 2019-05-16 | 公益財団法人電磁材料研究所 | Thin film strain sensor material and thin film strain sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52139992A (en) * | 1976-05-06 | 1977-11-22 | Gould Inc | Distortion meter and method of manufacture thereof |
-
1988
- 1988-09-12 JP JP63227740A patent/JPH0770367B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52139992A (en) * | 1976-05-06 | 1977-11-22 | Gould Inc | Distortion meter and method of manufacture thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07335911A (en) * | 1994-06-06 | 1995-12-22 | Osaka Prefecture | Pressure sensor integrated with pressure receiving pipe |
| JPH0892730A (en) * | 1994-09-27 | 1996-04-09 | Nok Corp | Production of chromium-oxygen alloy thin film |
| KR100396932B1 (en) * | 1995-03-09 | 2004-06-16 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | A resistive element including a chromium silicide resistive film |
| JP2019074452A (en) * | 2017-10-18 | 2019-05-16 | 公益財団法人電磁材料研究所 | Thin film strain sensor material and thin film strain sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0770367B2 (en) | 1995-07-31 |
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