JPH0278946U - - Google Patents
Info
- Publication number
- JPH0278946U JPH0278946U JP15899688U JP15899688U JPH0278946U JP H0278946 U JPH0278946 U JP H0278946U JP 15899688 U JP15899688 U JP 15899688U JP 15899688 U JP15899688 U JP 15899688U JP H0278946 U JPH0278946 U JP H0278946U
- Authority
- JP
- Japan
- Prior art keywords
- resist
- mask
- pattern
- patterned
- transferring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図は本考案の一実施例の多層構造レジスト
の部分断面図、第２図及び第３図は従来の３層構
造レジストによるパターン形成工程の説明図であ
つて第２図は下地膜をエツチングする際にクラン
プで保持する場合を示す図、第３図は下層膜をエ
ツチングする際にクランプで保持する場合を示す
図、第４図は前記一実施例の多層構造レジストの
製造工程の説明図、第５図は前記一実施例の多層
構造レジストでパターン形成する工程の説明図、
第６図は本考案の他の実施例の多層構造レジスト
の一部断面図である。
１１，２１…基板、１２，２２…パターン形成
対象物たる下地膜、１３，２３…第１のレジスト
たる下層膜、１４，２５…第２のレジストたる中
間膜及び上層膜、１６，２６…クランプ。
FIG. 1 is a partial cross-sectional view of a multilayer resist according to an embodiment of the present invention, and FIGS. 2 and 3 are illustrations of a pattern forming process using a conventional three-layer resist. FIG. 3 is a diagram showing the case where the lower layer film is held with a clamp when etching, and FIG. 4 is an explanation of the manufacturing process of the multilayer resist of the above embodiment. FIG. 5 is an explanatory diagram of the process of forming a pattern with the multilayer resist of the above-mentioned embodiment,
FIG. 6 is a partial cross-sectional view of a multilayer resist according to another embodiment of the present invention. DESCRIPTION OF SYMBOLS 11, 21... Substrate, 12, 22... Underlayer film which is a pattern formation object, 13, 23... Lower layer film which is a first resist, 14, 25... Intermediate film and upper layer film which are second resist, 16, 26... Clamp .
Claims (1)
ジストと、 この第１のレジストの上に形成され、該第１の
レジストにパターンを転写する際のマスクとして
用いる第２のレジストとを有する多層構造レジス
トにおいて、 前記パターン形成対象物の外周縁部近傍に形成
された前記第１のレジストの少なくとも一部の上
に前記第２のレジストを形成しない部分を設けた
ことを特徴とする多層構造レジスト。[Claims for Utility Model Registration] A first resist formed on an object to be patterned, and a mask formed on the first resist and used as a mask when transferring a pattern to the first resist. and a second resist, wherein a portion where the second resist is not formed is provided on at least a portion of the first resist formed near the outer peripheral edge of the pattern forming object. A multilayer structure resist characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15899688U JPH0278946U (en) | 1988-12-08 | 1988-12-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15899688U JPH0278946U (en) | 1988-12-08 | 1988-12-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0278946U true JPH0278946U (en) | 1990-06-18 |
Family
ID=31439817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15899688U Pending JPH0278946U (en) | 1988-12-08 | 1988-12-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0278946U (en) |
-
1988
- 1988-12-08 JP JP15899688U patent/JPH0278946U/ja active Pending