JPH028064U - - Google Patents
Info
- Publication number
- JPH028064U JPH028064U JP8401788U JP8401788U JPH028064U JP H028064 U JPH028064 U JP H028064U JP 8401788 U JP8401788 U JP 8401788U JP 8401788 U JP8401788 U JP 8401788U JP H028064 U JPH028064 U JP H028064U
- Authority
- JP
- Japan
- Prior art keywords
- island
- fet
- disposed
- semiconductor device
- optically coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Description
第１図は本考案の第一の実施例を示す光結合半
導体装置の部分破断斜視図、第２図は第１図にお
いて用いるアイランドの平面図、第３図は本考案
の第二の実施例を説明するための光結合半導体装
置に用いられるアイランドの平面図、第４図は従
来の一例を示す光結合半導体装置の部分破断斜視
図、第５図は第４図において用いるアイランドの
平面図である。
１……発光ダイオード、２……受光素子、３…
…ＦＥＴ、４……アイランド、５，９……孔、６
……リード端子、７……ボンデイングワイヤー、
８……外装樹脂。
FIG. 1 is a partially cutaway perspective view of an optically coupled semiconductor device showing a first embodiment of the present invention, FIG. 2 is a plan view of an island used in FIG. 1, and FIG. 3 is a second embodiment of the present invention. FIG. 4 is a partially cutaway perspective view of an optically coupled semiconductor device showing a conventional example, and FIG. 5 is a plan view of the island used in FIG. 4. be. 1... Light emitting diode, 2... Light receiving element, 3...
...FET, 4...Island, 5, 9...Hole, 6
...Lead terminal, 7...Bonding wire,
8...Exterior resin.
Claims (1)
動作する発光ダイオードと前記発光ダイオードの
光エネルギーを受光する受光素子と前記受光素子
の発生する出力電圧により駆動されるＦＥＴとを
リードフレームの各々独立したアイランド上に配
置した光結合半導体装置において、前記ＦＥＴを
配置する前記アイランド上で且つ前記ＦＥＴを配
置する領域と前記アイランドのリード端子部との
間の部分に、前記リード端子の幅よりも広い長方
形又は長円形の孔を設けたことを特徴とする光結
合半導体装置。 A light emitting diode operated by an input signal applied between a pair of input terminals, a light receiving element receiving light energy of the light emitting diode, and an FET driven by an output voltage generated by the light receiving element are connected to each other independently on a lead frame. In the optically coupled semiconductor device disposed on an island, a rectangle wider than the width of the lead terminal is provided on the island where the FET is disposed and between a region where the FET is disposed and a lead terminal portion of the island. Or an optically coupled semiconductor device characterized by having an oval hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8401788U JPH028064U (en) | 1988-06-24 | 1988-06-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8401788U JPH028064U (en) | 1988-06-24 | 1988-06-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH028064U true JPH028064U (en) | 1990-01-18 |
Family
ID=31308717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8401788U Pending JPH028064U (en) | 1988-06-24 | 1988-06-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH028064U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023139458A (en) * | 2022-03-22 | 2023-10-04 | 株式会社東芝 | semiconductor device |
-
1988
- 1988-06-24 JP JP8401788U patent/JPH028064U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023139458A (en) * | 2022-03-22 | 2023-10-04 | 株式会社東芝 | semiconductor device |