JPH0280928A - Infrared image sensor - Google Patents
Infrared image sensorInfo
- Publication number
- JPH0280928A JPH0280928A JP63232931A JP23293188A JPH0280928A JP H0280928 A JPH0280928 A JP H0280928A JP 63232931 A JP63232931 A JP 63232931A JP 23293188 A JP23293188 A JP 23293188A JP H0280928 A JPH0280928 A JP H0280928A
- Authority
- JP
- Japan
- Prior art keywords
- membrane
- solid
- infrared
- image sensor
- fiber plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000000835 fiber Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 238000003384 imaging method Methods 0.000 abstract description 8
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract 6
- 239000007836 KH2PO4 Substances 0.000 abstract 2
- 229910000402 monopotassium phosphate Inorganic materials 0.000 abstract 2
- 235000019796 monopotassium phosphate Nutrition 0.000 abstract 2
- GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical compound [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 abstract 2
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
赤外線レーザからの光ビームの強度分布を測定するため
の赤外線イメージセンサに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an infrared image sensor for measuring the intensity distribution of a light beam from an infrared laser.
この発明は、波長が１．２−以上の赤外線レーザからの
光ビームの強度分布を測定するための簡易な測定・記録
用の赤外線イメージセンサを得ることを目的として、固
体撮像素子とファイバープレートと非線形光学材料の多
結晶膜とから赤外線イメージセンサを構成したものであ
る。This invention aims to obtain an infrared image sensor for simple measurement and recording to measure the intensity distribution of a light beam from an infrared laser having a wavelength of 1.2- or more. An infrared image sensor is constructed from a polycrystalline film of nonlinear optical material.
従来、この種の技術に関しては、赤外輝尽蛍光体膜で、
赤外光ビームの強度分布を可視光像に変換し、さらに可
視光像をレンズ付のカメラで撮像していた。Conventionally, regarding this type of technology, infrared stimulable phosphor film,
The intensity distribution of the infrared light beam was converted into a visible light image, and the visible light image was then captured with a camera equipped with a lens.
上記従来技術においては、赤外輝尽蛍光体膜を短波長の
光で予備励起する必要があり、また連続的に赤外線を照
射すると発光強度が減少しでいくという問題があった。In the above-mentioned conventional technology, there is a problem that it is necessary to pre-excite the infrared stimulable phosphor film with light of a short wavelength, and that the emission intensity tends to decrease when continuously irradiated with infrared rays.
本発明は上記の問題点を解決するためになされたもので
、赤外線をその２次高調波に変換する非線形光学材料の
多結晶膜と、光ファイバの束であるファイバープレート
と、０．４〜１．１−の波長で悪魔をもつ固体撮像素子
から赤外線イメージセンサを構成したので、１．２ Ｊ
Ｍ以上の波長の赤外線強炭分布を簡易に測定・記録する
ことが可能となったものである。The present invention was made to solve the above problems, and includes a polycrystalline film made of a nonlinear optical material that converts infrared rays into its second harmonic, a fiber plate that is a bundle of optical fibers, and a fiber plate that is a bundle of optical fibers. Since the infrared image sensor is constructed from a solid-state image sensor that has a wavelength of 1.1-, it is 1.2 J.
This makes it possible to easily measure and record the distribution of infrared strong carbon at wavelengths of M or more.
上記構成の作用は先ず、波長が１．２〜２．０−の赤外
光ビームが非線形光学材料の多結晶膜に入射すると、２
次高調波である０、６〜１．０μｍの光が発生し、入射
した赤外光の強度分布に対応した光分布ができる。ファ
イバープレートは光分布を固体撮像素子の入力面に伝送
するので、固体撮像素子からは赤外光の強度分布に対応
した画像信号を得ることができる。The effect of the above configuration is that when an infrared light beam with a wavelength of 1.2 to 2.0-2 is incident on a polycrystalline film of nonlinear optical material, 2
Light of 0.6 to 1.0 μm, which is the harmonic, is generated, and a light distribution corresponding to the intensity distribution of the incident infrared light is created. Since the fiber plate transmits the light distribution to the input surface of the solid-state image sensor, it is possible to obtain an image signal corresponding to the intensity distribution of infrared light from the solid-state image sensor.
固体（最像素子は通常、０．４〜１．０μｍの波長域で
感度を持つものを入手できる。Solid-state (imaging elements are usually available that have sensitivity in the wavelength range of 0.4 to 1.0 μm).
以下、本発明の一実施例を図面に基づいて説明する。固
体撮像素子３は可視光撮像用の２５万画素のＣＣＤ素子
を用いた。固体撮像素子３の入力面にはファイバープレ
ート２が光学接着剤を用いて接着されている。ファイバ
ープレート２の他面には非線形光学材料の一種であるＫ
１１ｔＰＯ，の粉末を塗布した多結晶膜工が形成されて
いる。Hereinafter, one embodiment of the present invention will be described based on the drawings. As the solid-state image sensor 3, a 250,000 pixel CCD element for visible light imaging was used. A fiber plate 2 is bonded to the input surface of the solid-state image sensor 3 using an optical adhesive. The other surface of the fiber plate 2 is coated with K, which is a type of nonlinear optical material.
A polycrystalline film coated with 11 tPO powder was formed.
非線形光学材料の多層膜１の材料として他の非線形光学
材料を用いてもよい。Other nonlinear optical materials may be used as the material for the multilayer film 1 of nonlinear optical materials.
半導体レーザの１．２μｍ以上の波長の光ビームが照射
されると、照射は赤外線はシリコン膜４を透過して、非
線形光学材料の多結晶膜ｌに入射し、非線形光学材料の
多結晶膜１上に２次高周波の光分布を発生させる。２次
高周波の光分布はファイバープレート２によって、固体
撮像素子３の入力面に伝送される。このとき２次高周波
の波長が０．４〜１．０−の範囲であれば、固体撮像素
子３は入射赤外襟の強度分布に対応した画像信号を出力
する。When a light beam of a wavelength of 1.2 μm or more from a semiconductor laser is irradiated, the infrared rays of the irradiation pass through the silicon film 4 and enter the polycrystalline film l of the nonlinear optical material. A secondary high-frequency light distribution is generated above. The optical distribution of the secondary high frequency is transmitted to the input surface of the solid-state image sensor 3 by the fiber plate 2 . At this time, if the wavelength of the secondary high frequency is in the range of 0.4 to 1.0-, the solid-state imaging device 3 outputs an image signal corresponding to the intensity distribution of the incident infrared collar.
本実施例では、０．４〜１．０μｍの波長域に感度をも
つ通常の固体Ｉ最像素子を使用しているが、Ｋｌｌ□ｐ
ｏ４は１．５＃Ｉ＋！以上の波長の赤外線を透過しない
ので本実施例では１．５ｔＩｍ以下の波長に感度をもつ
。In this example, a normal solid-state I mostimaging element sensitive to a wavelength range of 0.4 to 1.0 μm is used.
o4 is 1.5#I+! Since it does not transmit infrared rays of wavelengths above, this embodiment has sensitivity to wavelengths below 1.5 tIm.
本実施例では、非線形光学材料の多結晶膜の赤外線入射
側にシリコン膜４を蒸着により形成した。In this example, a silicon film 4 was formed by vapor deposition on the infrared incident side of a polycrystalline film of a nonlinear optical material.
シリコンは１．２−より短い波長の光を通さないので、
蛍光灯の照明の下でも１．２〜２．０μｍの赤外光強度
分布を測定できる。Silicon does not pass light with wavelengths shorter than 1.2-
Infrared light intensity distribution of 1.2 to 2.0 μm can be measured even under fluorescent lamp illumination.
なお、ファイバープレート２と非線形光学材料の多結晶
膜１の間に、イメージファイババンドル等の他のファイ
バ光学系を入れることもできる。Note that another fiber optical system such as an image fiber bundle can also be inserted between the fiber plate 2 and the polycrystalline film 1 of nonlinear optical material.
この発明は以上説明したように、固体撮像素子とファイ
バープレートと非線形光学材料の多結晶膜とから構成す
ることにより、簡易に１．２〜２．０μｍの赤外レーザ
からの赤外光ビームの強度分布を簡易に計測・記録でき
る赤外線イメージセンサを得たちのである。As explained above, this invention is constructed from a solid-state image sensor, a fiber plate, and a polycrystalline film made of a nonlinear optical material, thereby easily generating an infrared light beam from an infrared laser of 1.2 to 2.0 μm. We developed an infrared image sensor that can easily measure and record intensity distribution.
６ ・ ・ リード ７ ・ ・基板 以上 出願人 セイコー電子工業株式会社 代理人°弁理士 林 敬 之 助6 ・・ lead 7・ ·substrate that's all Applicant: Seiko Electronics Industries Co., Ltd. Agent: Patent Attorney Takayuki Hayashi
第１図は本発明による赤外イメージセンサの一実施例を
示す側断面図である。
ｌ・・・非線形光学材料の多結晶膜
２・・・ファイバープレート
３・・・固体撮像素子
４・・・シリコン膜
５・・・ポンディングワイヤーFIG. 1 is a side sectional view showing an embodiment of an infrared image sensor according to the present invention. l... Polycrystalline film of nonlinear optical material 2... Fiber plate 3... Solid-state image sensor 4... Silicon film 5... Bonding wire
Claims (2)
材料の多結晶膜とから構成されることを特徴とする赤外
線イメージセンサ(1) An infrared image sensor comprising a solid-state image sensor, a fiber plate, and a polycrystalline film made of a nonlinear optical material.
シリコン膜を形成したことを特徴とする特許請求の範囲
第１項記載の赤外線イメージセンサ。(2) The infrared image sensor according to claim 1, wherein a silicon film is formed on the infrared incident side of the polycrystalline film of the nonlinear optical material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63232931A JPH0280928A (en) | 1988-09-16 | 1988-09-16 | Infrared image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63232931A JPH0280928A (en) | 1988-09-16 | 1988-09-16 | Infrared image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0280928A true JPH0280928A (en) | 1990-03-22 |
Family
ID=16947091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63232931A Pending JPH0280928A (en) | 1988-09-16 | 1988-09-16 | Infrared image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0280928A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0354870A (en) * | 1989-07-24 | 1991-03-08 | Hamamatsu Photonics Kk | Invisible light image detector device |
| CN1035842C (en) * | 1990-04-25 | 1997-09-10 | 北美飞利浦公司 | Wavelength conversion method and device |
| JP2002043592A (en) * | 2000-05-19 | 2002-02-08 | Agilent Technol Inc | Photoconductive switch |
| WO2003023338A1 (en) * | 2001-09-10 | 2003-03-20 | Hamamatsu Photonics K.K. | Infrared-visible conversion member and infrared detector |
| JP2003092395A (en) * | 2001-09-19 | 2003-03-28 | Sony Corp | Imaging device |
| CN100456811C (en) * | 2004-12-21 | 2009-01-28 | 三星电子株式会社 | Image sensing device with wide dynamic range and image pickup device using same |
| JP2019075463A (en) * | 2017-10-16 | 2019-05-16 | 株式会社豊田中央研究所 | Silicon photodiode |
-
1988
- 1988-09-16 JP JP63232931A patent/JPH0280928A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0354870A (en) * | 1989-07-24 | 1991-03-08 | Hamamatsu Photonics Kk | Invisible light image detector device |
| CN1035842C (en) * | 1990-04-25 | 1997-09-10 | 北美飞利浦公司 | Wavelength conversion method and device |
| JP2002043592A (en) * | 2000-05-19 | 2002-02-08 | Agilent Technol Inc | Photoconductive switch |
| WO2003023338A1 (en) * | 2001-09-10 | 2003-03-20 | Hamamatsu Photonics K.K. | Infrared-visible conversion member and infrared detector |
| JP2003092395A (en) * | 2001-09-19 | 2003-03-28 | Sony Corp | Imaging device |
| CN100456811C (en) * | 2004-12-21 | 2009-01-28 | 三星电子株式会社 | Image sensing device with wide dynamic range and image pickup device using same |
| JP2019075463A (en) * | 2017-10-16 | 2019-05-16 | 株式会社豊田中央研究所 | Silicon photodiode |
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