JPH0281055U - - Google Patents
Info
- Publication number
- JPH0281055U JPH0281055U JP16069688U JP16069688U JPH0281055U JP H0281055 U JPH0281055 U JP H0281055U JP 16069688 U JP16069688 U JP 16069688U JP 16069688 U JP16069688 U JP 16069688U JP H0281055 U JPH0281055 U JP H0281055U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- temperature
- change element
- top surface
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Thermistors And Varistors (AREA)
Description
第１図Ａ〜Ｃは、この考案の実施例である半導
体装置のそれぞれ平面図、側面図および正面図、
第２図ＡおよびＢはいずれもこの考案の半導体装
置の一部を構成する感温急変素子であるサーミス
タを示す外観図、第３図は同半導体装置における
ワイヤリング状態を示す図、第４図Ａ〜Ｄはこの
考案の半導体装置の別の実施例を示す図である。
また第５図は従来の半導体装置を示す平面図であ
る。
１……バワーＭＯＳＥＴ（半導体チツプ）、２
……サーミスタ（感温急変素子）、２１……スリ
ツト（間隙）、２２……電極面。
1A to 1C are a plan view, a side view, and a front view, respectively, of a semiconductor device that is an embodiment of this invention;
Figures 2A and 2B are external views showing a thermistor, which is a temperature-sensitive rapid change element that constitutes a part of the semiconductor device of this invention, Figure 3 is a diagram showing the wiring state of the semiconductor device, and Figure 4A -D are diagrams showing other embodiments of the semiconductor device of this invention.
Further, FIG. 5 is a plan view showing a conventional semiconductor device. 1...Power MOSET (semiconductor chip), 2
...Thermistor (temperature-sensitive rapid change element), 21...Slit (gap), 22... Electrode surface.
Claims (1)
介して固定した半導体装置において、 前記感温急変素子の上面の２ケ所に所定幅の間
隙を設けてワイヤボンデイング用の電極面を形成
したことを特徴とする半導体装置。[Scope of Claim for Utility Model Registration] In a semiconductor device in which a temperature-sensitive rapid change element is fixed to the top surface of a semiconductor chip via an insulating layer, gaps of a predetermined width are provided at two locations on the top surface of the temperature-sensitive sudden change element for use in wire bonding. What is claimed is: 1. A semiconductor device comprising: an electrode surface formed thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988160696U JPH0627962Y2 (en) | 1988-12-09 | 1988-12-09 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988160696U JPH0627962Y2 (en) | 1988-12-09 | 1988-12-09 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0281055U true JPH0281055U (en) | 1990-06-22 |
| JPH0627962Y2 JPH0627962Y2 (en) | 1994-07-27 |
Family
ID=31442989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988160696U Expired - Lifetime JPH0627962Y2 (en) | 1988-12-09 | 1988-12-09 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0627962Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613156U (en) * | 1992-07-28 | 1994-02-18 | シャープ株式会社 | Power semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51885A (en) * | 1974-06-20 | 1976-01-07 | Matsushita Electric Industrial Co Ltd | Handotaisoshi |
| JPS6233401A (en) * | 1985-08-07 | 1987-02-13 | 株式会社村田製作所 | Manufacture of negative temperature coefficient thermistor |
| JPH0258803A (en) * | 1988-08-24 | 1990-02-28 | Murata Mfg Co Ltd | Chip type thermistor |
-
1988
- 1988-12-09 JP JP1988160696U patent/JPH0627962Y2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51885A (en) * | 1974-06-20 | 1976-01-07 | Matsushita Electric Industrial Co Ltd | Handotaisoshi |
| JPS6233401A (en) * | 1985-08-07 | 1987-02-13 | 株式会社村田製作所 | Manufacture of negative temperature coefficient thermistor |
| JPH0258803A (en) * | 1988-08-24 | 1990-02-28 | Murata Mfg Co Ltd | Chip type thermistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613156U (en) * | 1992-07-28 | 1994-02-18 | シャープ株式会社 | Power semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0627962Y2 (en) | 1994-07-27 |