JPH0281422A - Manufacture of soi substrate - Google Patents
Manufacture of soi substrateInfo
- Publication number
- JPH0281422A JPH0281422A JP23200688A JP23200688A JPH0281422A JP H0281422 A JPH0281422 A JP H0281422A JP 23200688 A JP23200688 A JP 23200688A JP 23200688 A JP23200688 A JP 23200688A JP H0281422 A JPH0281422 A JP H0281422A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- film
- insulating film
- recrystallized
- soi substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はＳＯＩ基板の製造方法に係わり、特に表面平
滑性に優れるＳＯｔ基板の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing an SOI substrate, and particularly to a method for manufacturing an SOt substrate with excellent surface smoothness.
第２図に従来のＳＯＩ基板の製造工程の主要部が示され
る。第２（ａ）図はシリコン基板３の上に非晶質絶縁Ｍ
２と多結晶シリコン１が積層された状態を示す模式断面
図である。第２ Ｃｂ１図は光吸収用に透明絶縁膜４が
積層された状態を示す、ｉ３明絶縁膜は厚さ【がレーザ
の波長λに対してｎｔ＝ （２ｍ＋１） λ／ ４
（１１の関係を満たすよう選ば
れる。ここにｎは透明絶縁膜の屈折率９ｍは正の整数で
ある。FIG. 2 shows the main parts of the conventional SOI substrate manufacturing process. FIG. 2(a) shows an amorphous insulator M on a silicon substrate 3.
2 is a schematic cross-sectional view showing a state in which polycrystalline silicon 2 and polycrystalline silicon 1 are stacked. Figure 2 Cb1 shows a state in which a transparent insulating film 4 is laminated for light absorption.
(Selected so as to satisfy the relationship 11. Here, n is the refractive index of the transparent insulating film, 9m, and is a positive integer.
第２（Ｃ）図はレーザを照射して多結晶シリコン１を溶
融再結晶化し、再結晶シリコン５Ａを得た状態を示す、
第２ ｉｄ１図は透明絶縁膜を除去した状態を示す。FIG. 2(C) shows a state in which polycrystalline silicon 1 is melted and recrystallized by laser irradiation to obtain recrystallized silicon 5A.
FIG. 2 id1 shows a state in which the transparent insulating film has been removed.
しかしながら上述のような従来のＳＯＩ基板においては
多結晶シリコン１の表面には凹凸があり、例えば減圧Ｃ
ＶＤ法によって温度６００℃において多結晶シリコンを
形成した場合、最も良好な場合でも２００人程程度凹凸
がある。透明絶縁膜４を介して多結晶シリコンを再結晶
化して再結晶シリコン５Ａを得た場合においても透明絶
縁膜４の内表面は多結晶シリコンの凹凸を転写して凹凸
を有するため、熔融再結晶化した再結晶シリコンも多結
晶シリコンの表面状態をそのまま残存させることになる
。このような事情は透明絶縁板を用いないで多結晶シリ
コンを再結晶化する場合にも同じように存在し、溶融シ
リコンはレーザ照射後の急冷によって表面に波紋状の凹
凸が発生する。このような表面の凹凸は例えば再結晶シ
リコン表面にゲート酸化膜を形成してＭＯＳを製造する
場合に安定したゲート耐圧を得るための障害となる。However, in the conventional SOI substrate as described above, the surface of the polycrystalline silicon 1 has irregularities, for example,
When polycrystalline silicon is formed at a temperature of 600° C. by the VD method, there are about 200 irregularities even in the best case. Even in the case where recrystallized silicon 5A is obtained by recrystallizing polycrystalline silicon through the transparent insulating film 4, the inner surface of the transparent insulating film 4 has unevenness by transferring the unevenness of the polycrystalline silicon, so that melt recrystallization is not possible. The surface state of polycrystalline silicon also remains in the recrystallized silicon. This situation similarly exists when polycrystalline silicon is recrystallized without using a transparent insulating plate, and ripple-like irregularities occur on the surface of molten silicon due to rapid cooling after laser irradiation. Such surface irregularities become an obstacle to obtaining a stable gate breakdown voltage when, for example, a MOS is manufactured by forming a gate oxide film on the surface of recrystallized silicon.
この発明は上述の点に鑑みてなされその目的はシリコン
膜の調製方法に改良を加えることにより、平滑性に優れ
るＳＯＩ基板の製造方法を提供することにある。The present invention has been made in view of the above points, and its purpose is to provide a method for manufacturing an SOI substrate with excellent smoothness by improving the method for preparing a silicon film.
上述の目的はこの発明によれば、非晶質酸化シリコン上
にシリコン膜と透明絶縁膜を順次積層し、前記シリコン
膜をレーザによって溶融再結晶化するＳＯＩ基板の製造
方法において、シリコン膜として低温で非晶質シリコン
膜６を形成することにより達成される。According to the present invention, the above-mentioned object is a method for manufacturing an SOI substrate in which a silicon film and a transparent insulating film are sequentially laminated on an amorphous silicon oxide, and the silicon film is melted and recrystallized using a laser. This is achieved by forming the amorphous silicon film 6 in the following manner.
低温で形成された非晶質シリコン膜の平滑性は良好であ
る。透明絶縁膜４の内表面には非晶質シリコン膜の表面
状態が転写される。非晶質シリコンを溶融再結晶すると
きは再結晶シリコンの表面状態は透明絶縁膜の表面状態
と同一となる。The amorphous silicon film formed at low temperature has good smoothness. The surface state of the amorphous silicon film is transferred to the inner surface of the transparent insulating film 4. When amorphous silicon is melted and recrystallized, the surface state of the recrystallized silicon becomes the same as the surface state of the transparent insulating film.
次にこの発明の実施例を図面に基づいて説明する。第１
図はこの発明の実施例に係るＳＯＩ基板の製造工程を示
す断面図で、第１ ｉａ１図はシリコン基板３の上に非
晶質絶縁膜２．非晶質シリコン膜６、透明絶縁膜４が順
次積層された状態を示す。Next, embodiments of the present invention will be described based on the drawings. 1st
The figure is a cross-sectional view showing the manufacturing process of an SOI substrate according to an embodiment of the present invention, and FIG. 1ia1 shows an amorphous insulating film 2. A state in which an amorphous silicon film 6 and a transparent insulating film 4 are sequentially laminated is shown.
非晶質ｗＡｓｉ膜２はＣＶＤ法で酸化シリコン膜が形成
される。非晶質シリコン膜６は減圧ＣＶＤ法により ４
５０〜５１０℃の温度範囲で形成される。膜厚は０．５
ｎである。透明絶縁膜４は窒化シリコン（ＳｌｓＮｅ）
または酸化シリコン等をＣＶＤ法で形成することができ
る。透明絶縁膜の膜厚は前記＋１１式を満足するときは
光反射が少なくなりよく光吸収が行われる。第１ （ｂ
１図はレーザを照射して非晶質シリコン膜を再結晶化し
て再結晶シリコン５Ｂとした状態を示す、非晶質シリコ
ンは溶融したあと再結晶化するがこのとき再結晶シリコ
ンの表面は透明絶縁膜の表面状態と同一になるが、透明
絶縁膜の表面は非晶質シリコンの表面状態を転写してい
るため、最終的には再結晶シリコンの表面は非晶質シリ
コンの表面状態と同一となる。第１（Ｃ）図は透明絶縁
ｌ１１４を除去した状態を示し再結晶シリコン表面は数
人の凹凸を示し良好なＳＯＩ基板が得られる。このよう
な５ＯＩｆＦＦｉ、を用いて絶縁耐圧に優れるゲート酸
化膜を調製することが可能となる。The amorphous wAsi film 2 is a silicon oxide film formed by a CVD method. Amorphous silicon film 6 is formed by low pressure CVD method 4
It is formed at a temperature range of 50-510°C. Film thickness is 0.5
It is n. Transparent insulating film 4 is silicon nitride (SlsNe)
Alternatively, silicon oxide or the like can be formed by a CVD method. When the thickness of the transparent insulating film satisfies the above formula +11, light reflection is reduced and light absorption is performed well. First (b
Figure 1 shows a state in which an amorphous silicon film is recrystallized by laser irradiation to form recrystallized silicon 5B.Amorphous silicon is melted and then recrystallized, but at this time the surface of the recrystallized silicon is transparent. The surface state of the transparent insulating film is the same as that of the insulating film, but since the surface of the transparent insulating film transfers the surface state of amorphous silicon, the surface state of recrystallized silicon is ultimately the same as that of amorphous silicon. becomes. FIG. 1C shows a state in which the transparent insulator 114 has been removed, and the surface of the recrystallized silicon shows some unevenness, resulting in a good SOI substrate. Using such 5OIfFFi, it is possible to prepare a gate oxide film having excellent dielectric strength.
（発明の効果）
この発明によれば、非晶質酸化シリコン上にシリコン膜
と透明絶縁膜を順次積層し、前記シリコン膜をレーザに
よって溶融再結晶化するＳＯＩ基板の製造方法において
、シリコン膜として低温で非晶質シリコン膜を形成する
ので非晶質シリコン膜の表面状態が透明絶縁膜に転写さ
せられ、得られた透明絶縁膜の表面状態に従って非晶質
シリコンが溶融再結晶化する結果、再結晶シリコンの表
面状態は非晶質シリコンの表面状態と同一の良好な状態
となる。(Effects of the Invention) According to the present invention, in a method for manufacturing an SOI substrate in which a silicon film and a transparent insulating film are sequentially laminated on an amorphous silicon oxide, and the silicon film is melted and recrystallized using a laser, the silicon film is Since the amorphous silicon film is formed at a low temperature, the surface state of the amorphous silicon film is transferred to the transparent insulating film, and as a result, the amorphous silicon melts and recrystallizes according to the surface state of the obtained transparent insulating film. The surface condition of recrystallized silicon is as good as that of amorphous silicon.
第１図はこの発明の実施例に係るｓｏｒ基板の製造工程
図、第２図は従来のＳＯＩ基板の製造工程図である。
１：多結晶シリコン、２：非晶質絶縁膜、３：シリコン
基板、４：ｉ３明絶縁膜、５Ａ、５Ｂ Ｆ再結晶第１
図
第２図FIG. 1 is a manufacturing process diagram of a SOR substrate according to an embodiment of the present invention, and FIG. 2 is a manufacturing process diagram of a conventional SOI substrate. 1: Polycrystalline silicon, 2: Amorphous insulating film, 3: Silicon substrate, 4: i3 bright insulating film, 5A, 5B F recrystallization first
Figure 2
Claims (1)
順次積層し、前記シリコン膜をレーザによって溶融再結
晶化するＳＯＩ基板の製造方法において、シリコン膜と
して低温で非晶質シリコン膜を形成することを特徴とす
るＳＯＩ基板の製造方法。1) In a method for manufacturing an SOI substrate in which a silicon film and a transparent insulating film are sequentially laminated on an amorphous silicon oxide, and the silicon film is melted and recrystallized using a laser, an amorphous silicon film is formed as a silicon film at a low temperature. A method for manufacturing an SOI substrate, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23200688A JPH0281422A (en) | 1988-09-16 | 1988-09-16 | Manufacture of soi substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23200688A JPH0281422A (en) | 1988-09-16 | 1988-09-16 | Manufacture of soi substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0281422A true JPH0281422A (en) | 1990-03-22 |
Family
ID=16932470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23200688A Pending JPH0281422A (en) | 1988-09-16 | 1988-09-16 | Manufacture of soi substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0281422A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007115927A (en) * | 2005-10-20 | 2007-05-10 | Tokyo Univ Of Agriculture & Technology | Heat treatment method |
| JP2007288159A (en) * | 2007-03-12 | 2007-11-01 | Trustees Of Columbia Univ In The City Of New York | Surface planarization of silicon films during and after processing by sequential lateral crystallization. |
| US8859436B2 (en) | 1996-05-28 | 2014-10-14 | The Trustees Of Columbia University In The City Of New York | Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon |
| US9466402B2 (en) | 2003-09-16 | 2016-10-11 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
| US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
| JP2019220696A (en) * | 2014-04-13 | 2019-12-26 | 日本テキサス・インスツルメンツ合同会社 | Isolated semiconductor layer in bulk wafer by localized silicon epitaxial seed formation |
-
1988
- 1988-09-16 JP JP23200688A patent/JPH0281422A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8859436B2 (en) | 1996-05-28 | 2014-10-14 | The Trustees Of Columbia University In The City Of New York | Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon |
| US9466402B2 (en) | 2003-09-16 | 2016-10-11 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
| JP2007115927A (en) * | 2005-10-20 | 2007-05-10 | Tokyo Univ Of Agriculture & Technology | Heat treatment method |
| JP2007288159A (en) * | 2007-03-12 | 2007-11-01 | Trustees Of Columbia Univ In The City Of New York | Surface planarization of silicon films during and after processing by sequential lateral crystallization. |
| US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
| JP2019220696A (en) * | 2014-04-13 | 2019-12-26 | 日本テキサス・インスツルメンツ合同会社 | Isolated semiconductor layer in bulk wafer by localized silicon epitaxial seed formation |
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