JPH028155U - - Google Patents
Info
- Publication number
- JPH028155U JPH028155U JP8634888U JP8634888U JPH028155U JP H028155 U JPH028155 U JP H028155U JP 8634888 U JP8634888 U JP 8634888U JP 8634888 U JP8634888 U JP 8634888U JP H028155 U JPH028155 U JP H028155U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sectional
- view
- photodiode
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 230000002265 prevention Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
Description
第１図は本考案の一実施例を示す素子断面図、
第２図は他の実施例を示す素子断面図、第３図は
さらに他の実施例を示す断面図、第４図はレーザ
ーピツクアツプとしての構成例を示す断面図、第
５図はレーザーピツクアツプとしての他の構成例
を示す断面図である。
２１……Ｐ―基板、２２……Ｎ＋拡散受光部、
２３……Ｐ＋拡散層、２６……透明導電膜又は多
結晶シリコン膜、２８……半絶縁性多結晶シリコ
ン膜。
FIG. 1 is a cross-sectional view of an element showing an embodiment of the present invention;
FIG. 2 is a cross-sectional view of the element showing another embodiment, FIG. 3 is a cross-sectional view showing still another embodiment, FIG. 4 is a cross-sectional view showing an example of the configuration as a laser pickup, and FIG. 5 is a cross-sectional view of the device as a laser pickup. FIG. 3 is a sectional view showing another example of the configuration. 21...P-substrate, 22...N + diffused light receiving section,
23...P + diffusion layer, 26...Transparent conductive film or polycrystalline silicon film, 28...Semi-insulating polycrystalline silicon film.
Claims (1)
のフオトダイオードが近接して配置され、且つ、
前記フオトダイオードのＡｌ電極部およびその周
縁を除く該素子全面にＰ―基板と該同電位に接続
された表面反転防止層を備えたことを特徴とする
多分割型受光素子。 a plurality of photodiodes formed by N + diffusion into the P-substrate are placed in close proximity, and
A multi-segmented light-receiving element, characterized in that a surface inversion prevention layer connected to the same potential as the P-substrate is provided on the entire surface of the element except for the Al electrode part of the photodiode and its periphery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8634888U JPH028155U (en) | 1988-06-29 | 1988-06-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8634888U JPH028155U (en) | 1988-06-29 | 1988-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH028155U true JPH028155U (en) | 1990-01-19 |
Family
ID=31310986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8634888U Pending JPH028155U (en) | 1988-06-29 | 1988-06-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH028155U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04180269A (en) * | 1990-11-14 | 1992-06-26 | Sharp Corp | Photodetector with built-in circuit |
-
1988
- 1988-06-29 JP JP8634888U patent/JPH028155U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04180269A (en) * | 1990-11-14 | 1992-06-26 | Sharp Corp | Photodetector with built-in circuit |