JPH0247064U - - Google Patents
Info
- Publication number
- JPH0247064U JPH0247064U JP1988125795U JP12579588U JPH0247064U JP H0247064 U JPH0247064 U JP H0247064U JP 1988125795 U JP1988125795 U JP 1988125795U JP 12579588 U JP12579588 U JP 12579588U JP H0247064 U JPH0247064 U JP H0247064U
- Authority
- JP
- Japan
- Prior art keywords
- light
- state imaging
- imaging device
- solid
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
第１図は本考案の固体撮像装置の一例の要部を
模式的に示す断面図、第２図は不純物を導入した
ポリシリコン膜と不純物を導入しないポリシリコ
ン膜の透過率の波長依存性を示す特性図、第３図
は従来の固体撮像装置の一例の要部を模式的に示
す断面図である。
１……遮光膜、１０……シリコン基板、１１…
…受光部、１４……垂直電荷転送部、１６……転
送電極。
Fig. 1 is a cross-sectional view schematically showing the main part of an example of the solid-state imaging device of the present invention, and Fig. 2 shows the wavelength dependence of the transmittance of a polysilicon film with impurities introduced and a polysilicon film without impurities introduced. The characteristic diagram shown in FIG. 3 is a sectional view schematically showing a main part of an example of a conventional solid-state imaging device. 1... Light shielding film, 10... Silicon substrate, 11...
... Light receiving section, 14 ... Vertical charge transfer section, 16 ... Transfer electrode.
Claims (1)
純物を導入した半導体膜で形成したことを特徴と
する固体撮像装置。 A solid-state imaging device characterized in that a light-shielding film covering a surface of the device other than a light-receiving portion is formed of a semiconductor film into which impurities are introduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988125795U JPH0247064U (en) | 1988-09-27 | 1988-09-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988125795U JPH0247064U (en) | 1988-09-27 | 1988-09-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0247064U true JPH0247064U (en) | 1990-03-30 |
Family
ID=31376717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988125795U Pending JPH0247064U (en) | 1988-09-27 | 1988-09-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0247064U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002231913A (en) * | 2001-01-30 | 2002-08-16 | Hamamatsu Photonics Kk | Semiconductor device |
-
1988
- 1988-09-27 JP JP1988125795U patent/JPH0247064U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002231913A (en) * | 2001-01-30 | 2002-08-16 | Hamamatsu Photonics Kk | Semiconductor device |