JPH028162U - - Google Patents
Info
- Publication number
- JPH028162U JPH028162U JP1988086009U JP8600988U JPH028162U JP H028162 U JPH028162 U JP H028162U JP 1988086009 U JP1988086009 U JP 1988086009U JP 8600988 U JP8600988 U JP 8600988U JP H028162 U JPH028162 U JP H028162U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- block
- holds
- transmission module
- optical transmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000013307 optical fiber Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Landscapes
- Optical Couplings Of Light Guides (AREA)
- Optical Communication System (AREA)
Description
第１図ａ，ｂは、本願第１の考案の第１の実施
例である光送信モジユールの構造を示す図、第２
図ａ，ｂは、従来の光送信モジユールの構造を示
す図、第３図は、光送信モジユールの電気的等化
回路図、第４図は光送信モジユールの周波数応答
特性図、第５図ａ，ｂは、本願第２の考案の実施
例の構成図である。
図中、１：半導体レーザ、２：ペルチエ素子、
３：ＰＩＮモニタ、４：ロツドレンズ、５：光フ
アイバ、６：モジユールきよう体、１９，２０：
コンデンサ、５０：金属ブロツク、６０：電極、
７０，７１，７２：リード線、７５：コイル、で
ある。
1a and 1b are diagrams showing the structure of an optical transmission module which is a first embodiment of the first invention of the present application, and FIG.
Figures a and b are diagrams showing the structure of a conventional optical transmission module, Figure 3 is an electrical equalization circuit diagram of the optical transmission module, Figure 4 is a frequency response characteristic diagram of the optical transmission module, and Figure 5 a. , b are configuration diagrams of an embodiment of the second invention of the present application. In the figure, 1: semiconductor laser, 2: Peltier element,
3: PIN monitor, 4: Rod lens, 5: Optical fiber, 6: Module body, 19, 20:
Capacitor, 50: Metal block, 60: Electrode,
70, 71, 72: lead wire, 75: coil.
Claims (1)
るブロツクと、そのブロツクを保持するとともに
、前記半導体レーザ並びにブロツクの温度を調節
するペルチエ素子と、前記半導体レーザの出力光
を結合し伝送する光フアイバの入射端部を含む光
送信モジユールにおいて、前記半導体レーザがマ
ウントされたブロツクと前記モジユールのきよう
体の間に少なくとも１０ｎＦ以上の電気容量を持
つコンデンサを付加することを特徴とする光送信
モジユール。 (2) 半導体レーザとその半導体レーザを保持す
るブロツクと、そのブロツクを保持するとともに
、前記半導体レーザ並びにブロツクの温度を調節
するペルチエ素子と、前記半導体レーザの出力光
を結合し伝送する光フアイバの入射端部を含む光
送信モジユールにおいて、前記半導体レーザのマ
ウントされたブロツクときよう体とを接続する接
続線に少なくとも０．１μＨ以上のインダクタン
スを持たせることを特徴とする光送信モジユール
。[Claims for Utility Model Registration] (1) A semiconductor laser, a block that holds the semiconductor laser, a Peltier element that holds the block and adjusts the temperature of the semiconductor laser and the block, and output light of the semiconductor laser. In an optical transmitting module including an input end of an optical fiber for coupling and transmitting, a capacitor having a capacitance of at least 10 nF is added between the block on which the semiconductor laser is mounted and the module body. Optical transmission module with special features. (2) A semiconductor laser, a block that holds the semiconductor laser, a Peltier element that holds the block and adjusts the temperature of the semiconductor laser and the block, and an optical fiber that couples and transmits the output light of the semiconductor laser. 1. An optical transmission module including an input end portion, wherein a connection line connecting the block on which the semiconductor laser is mounted and the shield body has an inductance of at least 0.1 μH.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988086009U JPH028162U (en) | 1988-06-28 | 1988-06-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988086009U JPH028162U (en) | 1988-06-28 | 1988-06-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH028162U true JPH028162U (en) | 1990-01-19 |
Family
ID=31310662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988086009U Pending JPH028162U (en) | 1988-06-28 | 1988-06-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH028162U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0774420A (en) * | 1993-06-30 | 1995-03-17 | Fujitsu Ltd | Optical semiconductor circuit, optical module and power supply circuit for forming the same |
| JPH07335966A (en) * | 1994-06-06 | 1995-12-22 | Nec Eng Ltd | Semiconductor laser module |
-
1988
- 1988-06-28 JP JP1988086009U patent/JPH028162U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0774420A (en) * | 1993-06-30 | 1995-03-17 | Fujitsu Ltd | Optical semiconductor circuit, optical module and power supply circuit for forming the same |
| JPH07335966A (en) * | 1994-06-06 | 1995-12-22 | Nec Eng Ltd | Semiconductor laser module |
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