JPH028470B2 - - Google Patents
Info
- Publication number
- JPH028470B2 JPH028470B2 JP58235662A JP23566283A JPH028470B2 JP H028470 B2 JPH028470 B2 JP H028470B2 JP 58235662 A JP58235662 A JP 58235662A JP 23566283 A JP23566283 A JP 23566283A JP H028470 B2 JPH028470 B2 JP H028470B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- atomic
- alloys
- composition
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
Landscapes
- Hall/Mr Elements (AREA)
Description
産業上の利用分野
この発明は、強磁性磁気抵抗効果を利用する薄
膜磁気センサや薄膜磁気ヘツド等に適用可能な磁
気抵抗材料に関するものである。
従来例の構成とその問題点
従来、強磁性薄膜の磁気抵抗効果を利用した材
料として、パーマロイ(Ni−Fe合金)や、Ni−
Co合金が知られており、室温で用いる材料とし
てはこれらの合金と、さらに第三元素を加えたそ
の周辺の合金とを除いては、Δρ/ρ値にして1
〜2%以上あるいは比抵抗変化Δρにして、
0.3μΩ・cm以上の値をもつ磁気抵抗材料は知られ
ていなかつた。
また、Ni−Fe系およびNi−Co系合金に関して
は、いずれも耐食性が悪く、腐食しやすい材料で
あり、特に各々を薄膜化して薄膜ヘツドや磁気セ
ンサとして用いた場合、材料腐食に伴う磁気特性
の劣下を完全に防止するのは困難であつた。
一方、従来の磁気抵抗材料を用いた場合、最も
汎用されているパーマロイ(Ni−Fe合金)でも、
飽和磁化した状態での磁気抵抗による比抵抗変化
Δρの増加は通常、0.6μΩ・cm以下であり、さらに
大きな比抵抗変化をもつ材料が磁気抵抗効果型薄
膜磁気ヘツド等において望まれていた。
発明の目的
この発明は、耐食性にすぐれ、かつ比抵抗変化
が大きく、垂直磁気記録や面内磁気記録等に有効
に使用できる磁気抵抗材料を提供することを目的
とする。
発明の構成
この発明の磁気抵抗材料は、CoとPdを含む合
金であつて、Coの組成範囲が35〜60原子%であ
り、かつPdの組成範囲が65〜40原子%であるこ
とを特徴とするものである。
この発明の磁気抵抗材料には、CoとPdの2元
合金(Co−Pd合金)およびこれに他の第三元素
を加えた合金が含まれる。
Co−Pd合金は、室温で面心立方格子構造の固
溶型合金であり、Coは20原子%以上で強磁性を
示す。したがつて、Coが20原子%以上から強磁
性磁気抵抗効果が可能となるが、CoとPdを含む
合金においては、Co自体とは異なつた磁気抵抗
を示す。
その磁気特性はCoがおよそ35原子%以上で比
較的軟磁性を示し、約50原子%以上で抗磁力は第
1図に示すように比較的抗磁力Hcが大きくなる
スパツタ蒸着法においても20Oeを下まわる。ま
た磁化の値もCoの増加とともに単調に増加する。
実施例の説明
実施例1〜6:第1表に示す組成を有するCo
−Pd二元合金を作製し、60Hzの交流磁場に対す
る比抵抗変化Δρおよび抗磁力を測定した。その
結果を第1表に併せて示す。
INDUSTRIAL APPLICATION FIELD This invention relates to a magnetoresistive material applicable to thin film magnetic sensors, thin film magnetic heads, etc. that utilize the ferromagnetic magnetoresistive effect. Conventional configurations and their problems Conventionally, materials that utilize the magnetoresistive effect of ferromagnetic thin films include permalloy (Ni-Fe alloy) and Ni-
Co alloys are known, and except for these alloys and surrounding alloys containing a third element, the materials used at room temperature have a Δρ/ρ value of 1.
~2% or more or specific resistance change Δρ,
No magnetoresistive material with a value greater than 0.3 μΩ·cm was known. In addition, both Ni-Fe and Ni-Co alloys have poor corrosion resistance and are easily corroded.Especially when they are made into thin films and used as thin film heads or magnetic sensors, the magnetic properties due to material corrosion It has been difficult to completely prevent the deterioration of On the other hand, when using conventional magnetoresistive materials, even the most widely used permalloy (Ni-Fe alloy)
The increase in resistivity change Δρ due to magnetoresistance in a saturated magnetized state is usually 0.6 μΩ·cm or less, and materials with even larger resistivity changes have been desired for magnetoresistive thin-film magnetic heads and the like. OBJECTS OF THE INVENTION An object of the present invention is to provide a magnetoresistive material that has excellent corrosion resistance and a large change in specific resistance, and can be effectively used for perpendicular magnetic recording, longitudinal magnetic recording, and the like. Structure of the Invention The magnetoresistive material of the present invention is an alloy containing Co and Pd, and is characterized in that the composition range of Co is 35 to 60 atomic % and the composition range of Pd is 65 to 40 atomic %. That is. The magnetoresistive materials of the present invention include binary alloys of Co and Pd (Co-Pd alloys) and alloys in which other third elements are added thereto. The Co--Pd alloy is a solid solution alloy with a face-centered cubic lattice structure at room temperature, and exhibits ferromagnetism when Co contains 20 atomic % or more. Therefore, a ferromagnetic magnetoresistance effect becomes possible when the Co content is 20 atomic % or more, but alloys containing Co and Pd exhibit magnetoresistance different from that of Co itself. Its magnetic properties show relatively soft magnetism when Co is about 35 atomic % or more, and the coercive force is 20 Oe even in the sputter deposition method where the coercive force Hc becomes relatively large when Co is about 50 atomic % or more, as shown in Figure 1. Go down. Moreover, the magnetization value also increases monotonically as Co increases. Description of Examples Examples 1 to 6: Co having the composition shown in Table 1
A -Pd binary alloy was prepared and the specific resistance change Δρ and coercive force in response to a 60Hz alternating magnetic field were measured. The results are also shown in Table 1.
【表】
第2図に実施例4のCo−Pd合金についての60
Hzの交流磁場に対する磁気抵抗変化特性を示す。
また、第3図に実施例1〜6で示したCo−Pd
二元合金の比抵抗変化とCo組成との関係を示す。
Co組成が35〜60原子%で、かつPd組成が65〜40
原子%の範囲で比抵抗変化がピークをもつことが
第3図からわかる。
実施例7〜10:CoおよびPdにさらに第三元素
としてNiまたはFeを加え、第2表に示す組成を
有する合金を作製し、実施例1〜6と同様にして
比抵抗変化および抗磁力を測定した。その結果を
第2表に併せて示す。[Table] Figure 2 shows 60% of the Co-Pd alloy of Example 4.
The magnetoresistance change characteristics in response to an alternating current magnetic field of Hz are shown. In addition, Co-Pd shown in Examples 1 to 6 is shown in Fig. 3.
The relationship between resistivity change and Co composition of binary alloys is shown.
Co composition is 35 to 60 at% and Pd composition is 65 to 40
It can be seen from FIG. 3 that the specific resistance change has a peak in the atomic percent range. Examples 7 to 10: Co and Pd were further added with Ni or Fe as a third element to produce alloys having the compositions shown in Table 2, and changes in resistivity and coercive force were measured in the same manner as Examples 1 to 6. It was measured. The results are also shown in Table 2.
【表】
CoおよびPdの原子比をピーク組成領域に対応
させて、Co原子%/Pd原子%が約1.5〜0.43の範
囲で第三元素(Ni、Fe、Cuなど)を各種の目的
で添加した多元合金においても磁気抵抗特性とし
ては十分大きなものが望み得る。実施例7〜10に
おいてもまた、前述したところのほぼCo組成が
35〜60原子%、Pd組成が65〜40原子%の範囲内
で高い比抵抗変化が確認できた。
実施例11(耐食性試験):実施例1〜10で得た各
Co−Pd系合金を60℃で95%湿度中に10日間保持
する高温高湿テストを行なつた。その結果、従来
のバーマロイ薄膜では膜面内一帯にビツトが発生
したが、Co−Pd系合金薄膜ではいずれも変化は
認められなかつた。
発明の効果
この発明によれば、耐食性にすぐれ、比抵抗変
化の高い強磁性磁気抵抗材料を得ることができる
という効果がある。[Table] Adding tertiary elements (Ni, Fe, Cu, etc.) for various purposes with Co and Pd atomic ratios in the range of approximately 1.5 to 0.43, with Co and Pd atomic ratios corresponding to peak composition regions. Even in such a multi-component alloy, sufficiently large magnetoresistance properties can be expected. In Examples 7 to 10, the Co composition as described above was also almost the same.
A high change in resistivity was confirmed within the range of 35 to 60 atomic % and 65 to 40 atomic % of Pd composition. Example 11 (corrosion resistance test): Each of the samples obtained in Examples 1 to 10
A high-temperature, high-humidity test was conducted in which the Co-Pd alloy was kept at 60°C and 95% humidity for 10 days. As a result, in the conventional vermalloy thin film, bits were generated throughout the film surface, but no change was observed in the Co-Pd alloy thin film. Effects of the Invention According to the present invention, it is possible to obtain a ferromagnetic magnetoresistive material that has excellent corrosion resistance and a high change in specific resistance.
第1図はCo−Pd系合金におけるCo組成に対す
る室温での抗磁力の変化を示すグラフ、第2図は
実施例4で得たCo−Pd合金の磁気抵抗特性を示
すグラフ、第3図はCo−Pd二元合金におけるCo
組成と比抵抗変化Δρとの関係を示すグラフであ
る。
Figure 1 is a graph showing changes in coercive force at room temperature with respect to Co composition in Co-Pd alloys, Figure 2 is a graph showing magnetoresistance characteristics of the Co-Pd alloy obtained in Example 4, and Figure 3 is Co in Co-Pd binary alloy
It is a graph showing the relationship between composition and specific resistance change Δρ.
Claims (1)
が35〜60原子%であり、かつPdの組成範囲が65
〜40原子%であることを特徴とする磁気抵抗材
料。 2 前記合金がCoとPdの2元合金である特許請
求の範囲第1項記載の磁気抵抗材料。[Claims] 1. An alloy containing Co and Pd, wherein the composition range of Co is 35 to 60 atomic % and the composition range of Pd is 65 atomic %.
A magnetoresistive material characterized by ~40 atomic %. 2. The magnetoresistive material according to claim 1, wherein the alloy is a binary alloy of Co and Pd.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58235662A JPS60126879A (en) | 1983-12-13 | 1983-12-13 | magnetoresistive material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58235662A JPS60126879A (en) | 1983-12-13 | 1983-12-13 | magnetoresistive material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60126879A JPS60126879A (en) | 1985-07-06 |
| JPH028470B2 true JPH028470B2 (en) | 1990-02-23 |
Family
ID=16989332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58235662A Granted JPS60126879A (en) | 1983-12-13 | 1983-12-13 | magnetoresistive material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60126879A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04265511A (en) * | 1991-02-19 | 1992-09-21 | Sony Corp | Magnetic recording medium |
| JPH04356721A (en) * | 1991-03-28 | 1992-12-10 | Fuji Photo Film Co Ltd | Magnetic recording medium |
| US7347885B1 (en) * | 2001-12-10 | 2008-03-25 | The United States Of America As Represented By The Secretary Of The Navy | Synthesis of metal nanoparticle compositions from metallic and ethynyl compounds |
-
1983
- 1983-12-13 JP JP58235662A patent/JPS60126879A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60126879A (en) | 1985-07-06 |
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