JPH0285365A - Method and device for sputtering - Google Patents
Method and device for sputteringInfo
- Publication number
- JPH0285365A JPH0285365A JP23433088A JP23433088A JPH0285365A JP H0285365 A JPH0285365 A JP H0285365A JP 23433088 A JP23433088 A JP 23433088A JP 23433088 A JP23433088 A JP 23433088A JP H0285365 A JPH0285365 A JP H0285365A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic force
- target
- substrate
- sputtering
- lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 title claims description 18
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000005684 electric field Effects 0.000 claims abstract description 6
- 230000003685 thermal hair damage Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、マグネトロンスパッタリングの方法と装置の
改良に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to improvements in magnetron sputtering methods and apparatus.
（従来技術）
従来、薄膜等の作成にスパッタリング方法、装置が利用
されている。工業的にとのスパッタリングを利用すると
き、低温で、高速に成膜できる利点から、数多くあるス
パッタリング方法の中でも、マグネトロンスパッタリン
グ方法が利用されている。その中でも、近年、ハードデ
ィスク、光磁気ディスク等の情報媒体に利用するスパッ
タリング、さらにはフィルムコート等に利用するスパッ
タリングが採用され、これらにおいても、比較的低温で
、高速に成膜できるマグネトロンスパッタリングが多用
されている。(Prior Art) Conventionally, sputtering methods and devices have been used to create thin films and the like. When sputtering is used industrially, magnetron sputtering is used among many sputtering methods because of its advantage of being able to form films at low temperatures and at high speed. Among these, in recent years, sputtering has been adopted for use in information media such as hard disks and magneto-optical disks, and also for film coating, and in these cases, magnetron sputtering, which can form films at relatively low temperatures and at high speeds, is often used. has been done.
（発明の解決しようとする課題）
マグネトロンスパッタリングにおいて、比較的他のスパ
ッタリング方法にくらべて、低潟で成膜できるといって
も、成膜時にスパッタリング効率を上げるため等により
、被成膜体（例えば、光磁気ディスクの基板）がかなり
の熱にさらされることになる。これら被成膜体は、多（
存機高分子物が利用される。これら高分子物質は、熱に
対して比較的弱く、変形、変質を生じる。そのため、ス
パッタリング速度（成膜速度）を低下さして、対処する
等、スパッタリング効率を低下せしめて、はじめて実用
性がある等の課題を存している。(Problems to be Solved by the Invention) Although magnetron sputtering can form a film in a relatively low area compared to other sputtering methods, it is necessary to increase the sputtering efficiency during film formation. For example, the substrate of a magneto-optical disk) is exposed to considerable heat. These film-forming objects are poly(
Existing polymers are used. These polymeric substances are relatively weak against heat and undergo deformation and alteration. Therefore, there are problems that can only be put to practical use by reducing the sputtering efficiency, such as by reducing the sputtering rate (film formation rate).
スパッタリングにおける熱の発生は、プラズマによるも
のと、ターゲットまたは防ｃ仮等の熱輻射によるものが
あり、熱輻射については熱源を冷却する等して防ぐこと
が比較的容易だが、プラズマによる熱は防ぐことが困難
である。Heat generation during sputtering can be caused by plasma or by heat radiation from targets or anti-corrosive materials. Heat radiation is relatively easy to prevent by cooling the heat source, etc., but heat from plasma can be prevented. It is difficult to do so.
（課題を解決するための手段）
スパッタリング効率を低下さすことな（、被成膜体の異
常加熱を防止し、基板（被成膜体）の材料の選択幅を広
げうるスパッタリング方法と装置を提供するため検２す
し、本発明に到った。(Means for solving the problem) To provide a sputtering method and apparatus that can prevent abnormal heating of the object to be film-formed without reducing sputtering efficiency, and expand the selection range of materials for the substrate (the object to be film-formed). In order to do so, we conducted two tests and arrived at the present invention.
すなわち本発明は、マグネトロンスパッタリング方法に
おいてターゲット（および／またはカンード）の裏面と
、それ以外の場所に別に磁力線発生手段を配し、各々別
の磁力線発生手段（磁界発生手段）からの磁力線が、基
板（被成膜体）とターゲットとの対向域においての電界
方向に対して主として垂直方向に発生するようにしてス
パッタリングを行うことを特徴とするスパッタリング方
法であり、またマグネトロンスパッタリング装置におい
て、ターゲット（および／またはカンード）の裏面と、
それ以外の別の場所に磁力線発生手段を配設したことを
特徴とするマグネトロンスパッタリング装置である。That is, in the present invention, in a magnetron sputtering method, magnetic force line generation means are arranged separately on the back surface of the target (and/or cand) and in other places, and the magnetic force lines from each separate magnetic force line generation means (magnetic field generation means) are applied to the substrate. This is a sputtering method characterized in that sputtering is performed mainly in a direction perpendicular to the direction of the electric field in the area where the target (film-forming object) and the target face each other. / or cando) and the back side of the
This magnetron sputtering apparatus is characterized in that a magnetic force line generating means is disposed at a different location.
第１図に本発明の一例を示した。第２図に従来例を示し
た。′Ｉ４１図と第２図により本発明を説明する。FIG. 1 shows an example of the present invention. Figure 2 shows a conventional example. The present invention will be explained with reference to Figure 141 and Figure 2.
従来のマグネトロンスパッタリング方法は第２図に示す
ように主としてターゲット（またはカンード）の裏面に
磁力線発生手段（すなわちマグネットまたはその他の手
段）を配し、その磁力線は■で示す方向に発生する。こ
れに対し、本発明例の第１図においては、■のターゲッ
ト裏面の磁界発生手段以外の場所に設けられた磁界発生
手段により■以外の電界方向に主として垂直方向に発生
する磁力線■が生じ、プラズマの基板■への到達を妨げ
、熱の発生をおさえることができる。この本発明におけ
るターゲット裏面の磁力線発生手段を設け、これにより
、ターゲット裏面の磁力線発生手段により生ずる磁力線
以外の、電界方向（すなわちプラズマ方向）に対して垂
直な磁力線を発生するための第２の磁力線発生手段の配
し方の例として、第３図、第４図に示したが、これに限
定されるものではない。In the conventional magnetron sputtering method, as shown in FIG. 2, a magnetic field line generating means (ie, a magnet or other means) is mainly disposed on the back surface of a target (or cand), and the magnetic field lines are generated in the direction shown by . On the other hand, in FIG. 1 of the example of the present invention, the magnetic field generating means provided at a location other than the magnetic field generating means on the back surface of the target (■) generates magnetic lines of force (■) mainly perpendicular to the electric field directions other than (■). It prevents plasma from reaching the substrate (■) and suppresses heat generation. The magnetic force line generation means on the back surface of the target according to the present invention is provided, thereby generating second magnetic force lines for generating magnetic force lines perpendicular to the electric field direction (that is, the plasma direction) other than the magnetic force lines generated by the magnetic force line generation means on the target back surface. Examples of how the generating means are arranged are shown in FIGS. 3 and 4, but the arrangement is not limited thereto.
（発明の効果）
本発明により、従来のマグネトロンスパッタリング方式
に比較して、スパッタ効率を上げることができ、基板に
熱ダメージを与えにクク、生産性に対する配し方の他の
例を示す図である。(Effects of the Invention) According to the present invention, compared to the conventional magnetron sputtering method, it is possible to increase sputtering efficiency and reduce the risk of thermal damage to the substrate. be.
Claims (2)
ット（およびまたはカソード）の裏面と、それ以外の場
所とに、磁力線発生手段を配し、各々の磁力線発生手段
からの磁力線が、基板とターゲットとの対向域の電界方
向に対して主として垂直方向に、発生するようにしてス
パッタリングを行うことを特徴とするスパッタリング方
法。(1) In the magnetron sputtering method, magnetic force line generation means are arranged on the back surface of the target (and or cathode) and other places, and the magnetic force lines from each magnetic force line generation means generate an electric field in the area where the substrate and the target face each other. A sputtering method characterized in that sputtering is performed primarily in a direction perpendicular to the direction of the sputtering.
ット（およびまたはカソード）の裏面と、それ以外の場
所とに、磁力線発生手段を配設したことを特徴とするマ
グネトロンスパッタリング装置。(2) A magnetron sputtering apparatus characterized in that magnetic force line generating means are provided on the back surface of the target (and or the cathode) and at other locations.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23433088A JPH0285365A (en) | 1988-09-19 | 1988-09-19 | Method and device for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23433088A JPH0285365A (en) | 1988-09-19 | 1988-09-19 | Method and device for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0285365A true JPH0285365A (en) | 1990-03-26 |
Family
ID=16969315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23433088A Pending JPH0285365A (en) | 1988-09-19 | 1988-09-19 | Method and device for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0285365A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006257498A (en) * | 2005-03-17 | 2006-09-28 | Ulvac Japan Ltd | Sputtering source, sputtering equipment |
| JP2021513613A (en) * | 2018-02-13 | 2021-05-27 | エヴァテック・アーゲー | Methods and equipment for magnetron sputtering |
-
1988
- 1988-09-19 JP JP23433088A patent/JPH0285365A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006257498A (en) * | 2005-03-17 | 2006-09-28 | Ulvac Japan Ltd | Sputtering source, sputtering equipment |
| JP2021513613A (en) * | 2018-02-13 | 2021-05-27 | エヴァテック・アーゲー | Methods and equipment for magnetron sputtering |
| EP3753039B1 (en) * | 2018-02-13 | 2023-09-27 | Evatec AG | Methods of and apparatus for magnetron sputtering |
| US11848179B2 (en) | 2018-02-13 | 2023-12-19 | Evatec Ag | Methods of and apparatus for magnetron sputtering |
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