JPH028702A - Semi-insulating thickness measuring device - Google Patents
Semi-insulating thickness measuring deviceInfo
- Publication number
- JPH028702A JPH028702A JP15898788A JP15898788A JPH028702A JP H028702 A JPH028702 A JP H028702A JP 15898788 A JP15898788 A JP 15898788A JP 15898788 A JP15898788 A JP 15898788A JP H028702 A JPH028702 A JP H028702A
- Authority
- JP
- Japan
- Prior art keywords
- semi
- measured
- sensors
- measuring device
- thickness measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 208000003251 Pruritus Diseases 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000007803 itching Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、例えばG a A sウェハなどの半絶縁
体の厚さを非接触測定する装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an apparatus for non-contact measurement of the thickness of semi-insulators, such as GaAs wafers.
従来の技術
接触式のai1定機器、例えばマイクロメータは、G
a A s等のようにもろい材料の測定には不向きであ
る。そこで、非接触式の測定Wi器であるレーザ方式、
すなわちウェハ上にレーザ光を投射しその反射光像をイ
メーノセンサに結像させ三角法にて測定を行なうもの、
あるいは静電容量方式、すなわち第4図に示すように基
準床10とセンサ1とを間隔をおいて対向させ、その空
間にウェハを挿入し、挿入ウェハの厚さの関数である空
間の誘電率変化に伴なう静電容量変化を求めるようにし
たものが用いられている。Conventional technology contact type AI1 constant instruments, such as micrometers, are
It is not suitable for measuring brittle materials such as aAs. Therefore, a laser method, which is a non-contact measurement device,
In other words, a laser beam is projected onto the wafer, the reflected light image is formed on an image sensor, and measurement is performed using trigonometry.
Alternatively, there is a capacitive method, in which the reference bed 10 and the sensor 1 are opposed to each other at a distance as shown in FIG. A device that calculates the change in capacitance due to change is used.
発明が解決しようとする課題
しかし、上記のレーザ方式は、その投射を受けた被測定
対象の物性を変化させてしまう場合があり、適用対象が
限られるという問題がある。また、全体の構成が複雑、
高価になることも避けられない、これに対し、静電容量
式は、上記の問題点は生じない、しかし、これにおいて
は被測定対象が半絶縁体の場合、被測定体が基準床10
とセンサ1の間の空間のどの位置にあるかによってセン
サ1の出力が変化するため、その挿入位置ずれに伴なう
誤差の発生が避けられない。Problems to be Solved by the Invention However, the above-mentioned laser method has a problem in that it may change the physical properties of the object to be measured upon which it is irradiated, and the objects to which it can be applied are limited. In addition, the overall configuration is complicated,
In contrast, the capacitive method does not have the above problems.However, in this case, when the object to be measured is a semi-insulator, the object to be measured is the reference floor 10.
Since the output of the sensor 1 changes depending on the position in the space between the sensor 1 and the sensor 1, the occurrence of errors due to misalignment of the insertion position is unavoidable.
課題を解決するための方法
この発明は、測定厚さを被測定体象の挿入位置と無関係
としたものである。すなわちこの発明は挿入位置とセン
サ出力との関係が単調変化であって略直線と見なせるこ
とに着目してなされたものであり、間隔をおいて対向し
て配置され、交互に選択的に動作させられる二つの静電
容量センサと、その両静電センサの出力の平均値を算出
する処理部とからなる。Method for Solving the Problems The present invention makes the measured thickness independent of the insertion position of the object to be measured. In other words, this invention was made by focusing on the fact that the relationship between the insertion position and the sensor output changes monotonically and can be considered as a substantially straight line. It consists of two capacitance sensors, and a processing section that calculates the average value of the outputs of both capacitance sensors.
■
以上のものにおいて、第1図に示すように第1、第2の
静電容量センサ1.2間の間隔をd、その間に挿入され
た厚さ tの被測定対象3と上記第2の静電容量センサ
2間の距離をyとおくと、スインナ4.4を介して選択
的に取り出される第1、第2の静電容量センサ1.2の
出力A、Bは、厚さ tに対応したものとなるが、それ
に加えて第2図に示すように、それぞれyの増加に対し
て単調に増加と減少をすることになり、yが(d−t)
/2の状態、すなわち被測定対象3がセンサ1.2の中
央に位置したとき、両出力A、Bは−致し、文叉する。■ In the above, as shown in Fig. 1, the distance between the first and second capacitance sensors 1.2 is d, and the object to be measured 3 with a thickness of t inserted between them and the second capacitance sensor 1. If the distance between the capacitance sensors 2 is y, the outputs A and B of the first and second capacitance sensors 1.2, which are selectively taken out via the spinner 4.4, have a thickness of t. In addition, as shown in Figure 2, they increase and decrease monotonically as y increases, and y becomes (d-t).
/2 state, that is, when the object to be measured 3 is located at the center of the sensor 1.2, both outputs A and B match and intersect.
したがって、いま、被測定体3を両センサ1.2間に挿
入し、その状態で第1、第2のセンサ1の出力を交互に
選択的に取り出すと、その各出力は第2図において、そ
のときの挿入位置、例えばa点における出力Aa、Ba
となり、それが処理部に送られ、その両出力の平均値に
対応した出力が形成される。Therefore, if the object to be measured 3 is inserted between both sensors 1.2 and the outputs of the first and second sensors 1 are taken out alternately and selectively in this state, each output will be as shown in FIG. Output Aa, Ba at the insertion position at that time, e.g. point a
This is sent to the processing section, and an output corresponding to the average value of both outputs is formed.
しかして、この出力Aa、Baは一方が大になれば、能
力は小になるものであり、その平均値は挿入位置yとは
無関係に略一定となり、結局、挿入位置yによらず被測
定対象の厚さ Eが求められる。Therefore, if one of these outputs Aa and Ba becomes large, the capacity becomes small, and the average value thereof becomes approximately constant regardless of the insertion position y. The thickness E of the object is found.
実施例
第3図において、iW′!4容量式の第1、第2のセン
サ1.2は所定の間隔を隔てて対向して配置され、その
間に被測定体3が挿入されている。10はその第1、第
2のセンサ1.2と結線された処理部であり、各センサ
1.2は各対応する位置検出モジュール11.12と結
線されている。この位置検出モノニール11.12は、
第4図に示すように、センサに交流信号C1を与え、両
センサ1.2間の静電容量C(と基準コンデンサの容量
C5を比較してセンサ1.2間の誘電率変化に対応した
出力C6、すなわち、そこに挿入された被測定体3の厚
さに対応した出力を形成し、さらに、それを図示されて
いない電流フィルタを介してDC電圧として取出す要素
であり、そのDC電圧が第3図に示すように各対応する
A/D変換器13.14を介してディジタル符号化され
た後、演算r315に送出される。In FIG. 3 of the embodiment, iW'! The four-capacitance type first and second sensors 1.2 are arranged facing each other at a predetermined interval, and the object to be measured 3 is inserted between them. 10 is a processing unit connected to the first and second sensors 1.2, and each sensor 1.2 is connected to a corresponding position detection module 11.12. This position detection monoyl 11.12 is
As shown in Figure 4, an alternating current signal C1 is applied to the sensor, and the capacitance C between both sensors 1 and 2 (and the capacitance C5 of the reference capacitor are compared to correspond to the dielectric constant change between the sensors 1 and 2). It is an element that forms an output C6, that is, an output corresponding to the thickness of the object to be measured 3 inserted therein, and further extracts it as a DC voltage through a current filter (not shown), and the DC voltage is As shown in FIG. 3, after being digitally encoded via each corresponding A/D converter 13, 14, it is sent to a calculation r315.
演算器15は、前記位置検出モジュール11.12に対
し、選択的に動作、非動作の指令を送出すると共に動作
時の位置検出モノニール11または12からA/D変換
器13または14を介して導入出力される出力を順次交
互に読込み、その平均値を算出する。そして最終的には
予め被測定本と同一材質の基準体によって校正された平
均値と厚さの関係に基づいて、その平均値をリニアライ
ズし、外部に出力し、表示、記録などを行なわせる。The arithmetic unit 15 selectively sends operation/non-operation commands to the position detection module 11.12, and also inputs commands from the position detection monolayer 11 or 12 during operation via the A/D converter 13 or 14. The outputs are sequentially and alternately read and the average value is calculated. Finally, based on the relationship between the average value and thickness, which has been calibrated in advance using a reference body made of the same material as the book being measured, the average value is linearized and output externally for display, recording, etc. .
以上のものにおいて、被測定体3を第1、第2のセンサ
1.2により形成される空間に挿入すると、位置検出モ
ノニール11.12は交互に動作状態となり、それぞれ
の動作状態において、前記第2図に示すように被測定本
3の厚さに関係し、かつ挿入位置にも関係した出力A、
Bに対応した量が検出され、演算部15に読込まれる。In the above, when the object to be measured 3 is inserted into the space formed by the first and second sensors 1.2, the position detection monoyls 11.12 are alternately put into an operating state, and in each operating state, the As shown in Figure 2, the output A is related to the thickness of the book 3 to be measured and is also related to the insertion position.
The amount corresponding to B is detected and read into the calculation section 15.
そして、演痒部15、においで、両読込値の平均値が演
算され、次いでその平均値は所定のリニアライX処理さ
れて出力される。Then, the itching section 15 calculates the average value of both read values, and then the average value is subjected to a predetermined linear alignment X process and output.
尚、上記実施例は位置検出モジュールを選択的に動作さ
せた場合を例示したが、第1図に示すように第1、第2
のセンサ1.2、すなわち電極部分を交互に選択的に切
換え、共通の位置検出モジュールを用いるようにしても
よい。In addition, although the above embodiment illustrated the case where the position detection module is selectively operated, as shown in FIG.
The sensors 1.2, ie the electrode parts, may be selectively switched alternately and a common position detection module may be used.
発明の効果
以上のとおりであり、本発明は対向して配置した二つの
静電容量式センサを交互に選択的に動作させてその両出
力の平均値を求めているので、その空間に配置される半
絶縁体の挿入位置変化に伴なう出力の変化分の相殺が行
なわれ、挿入位置と無関係の厚さに対応した測定値を得
ることができる。The effects of the invention are as described above, and since the present invention alternately and selectively operates two capacitance sensors placed facing each other and obtains the average value of both outputs, The change in output due to the change in the insertion position of the semi-insulator is canceled out, and a measured value corresponding to the thickness independent of the insertion position can be obtained.
2 : 静電容量センサ : スインナ2: capacitive sensor : Suinna
Claims (1)
作させられる二つの静電容量センサと、その両静電セン
サの出力の平均値を算出する処理部とからなるところの
半絶縁体の厚さ測定装置。1. A semi-insulated device consisting of two capacitance sensors that are placed facing each other with a gap between them and are operated alternately and selectively, and a processing unit that calculates the average value of the outputs of both capacitance sensors. Body thickness measuring device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15898788A JPH028702A (en) | 1988-06-27 | 1988-06-27 | Semi-insulating thickness measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15898788A JPH028702A (en) | 1988-06-27 | 1988-06-27 | Semi-insulating thickness measuring device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH028702A true JPH028702A (en) | 1990-01-12 |
Family
ID=15683742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15898788A Pending JPH028702A (en) | 1988-06-27 | 1988-06-27 | Semi-insulating thickness measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH028702A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009013787A1 (en) * | 2007-07-26 | 2009-01-29 | Fujitsu Limited | Paper sheet thickness detection device |
-
1988
- 1988-06-27 JP JP15898788A patent/JPH028702A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009013787A1 (en) * | 2007-07-26 | 2009-01-29 | Fujitsu Limited | Paper sheet thickness detection device |
| JP4755283B2 (en) * | 2007-07-26 | 2011-08-24 | 富士通株式会社 | Paper thickness detector |
| US8028990B2 (en) | 2007-07-26 | 2011-10-04 | Fujitsu Limited | Paper thickness detecting apparatus with applying electrodes |
| US20110309572A1 (en) * | 2007-07-26 | 2011-12-22 | Fujitsu Limited | Paper thickness detecting apparatus |
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