JPH0288254U - - Google Patents

Info

Publication number
JPH0288254U
JPH0288254U JP1989149258U JP14925889U JPH0288254U JP H0288254 U JPH0288254 U JP H0288254U JP 1989149258 U JP1989149258 U JP 1989149258U JP 14925889 U JP14925889 U JP 14925889U JP H0288254 U JPH0288254 U JP H0288254U
Authority
JP
Japan
Prior art keywords
conductive film
layer
transparent conductive
solar cell
metal conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1989149258U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPH0288254U publication Critical patent/JPH0288254U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Description

【図面の簡単な説明】
第１図は本考案の太陽電池モジユールの一実施
例を示す要部の斜視図、第２図は本考案の太陽電
池モジユールの概略的な構成を示す断面図、第３
図は低抵抗ａ―Ｓｉ層が挿入された本考案の太陽
電池モジユールと従来の太陽電池モジユールの相
対的な効率を示した特性図、第４図は従来の太陽
電池モジユールを示した平面図である。 １……透明導電膜、２……ａ―Ｓｉ層、３……
金属導電膜、４……太陽電池ユニツト、５……透
明導電膜と金属導電膜との接合部、６……低抵抗
ａ―Ｓｉ層。

Claims (1)

  1. 【実用新案登録請求の範囲】 ガラス基板上に透明導電膜１、ａ―Ｓｉ層２お
    よび金属導電膜３で形成された太陽電池ユニツト
    ４の透明導電膜１と金属導電膜３との接合部５を
    接触させて直列または並列に連結した非晶質太陽
    電池モジユールにおいて、 前記ａ―Ｓｉ層２の両方の電極に透明導電膜１
    と金属導電膜３とを使用し、前記透明導電膜１と
    金属導電膜３との間に低抵抗ａ―Ｓｉ層６をプラ
    ズマＣＶＤ法で蒸着・挿入して、透明導電膜１を
    低抵抗ａ―Ｓｉ層６で遮蔽させて、透明導電膜１
    内の酸素による金属導電膜３の腐蝕を防止し得る
    ことを特徴とする非晶質シリコン低抵抗太陽電池
    モジユール。
JP1989149258U 1988-12-24 1989-12-25 Pending JPH0288254U (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019880021391U KR910007262Y1 (ko) 1988-12-24 1988-12-24 비정질 실리콘 저저항 태양전지 모듈

Publications (1)

Publication Number Publication Date
JPH0288254U true JPH0288254U (ja) 1990-07-12

Family

ID=19282466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989149258U Pending JPH0288254U (ja) 1988-12-24 1989-12-25

Country Status (2)

Country Link
JP (1) JPH0288254U (ja)
KR (1) KR910007262Y1 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939074A (ja) * 1982-08-26 1984-03-03 Fuji Electric Co Ltd 太陽電池装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939074A (ja) * 1982-08-26 1984-03-03 Fuji Electric Co Ltd 太陽電池装置

Also Published As

Publication number Publication date
KR900013473U (ko) 1990-07-05
KR910007262Y1 (ko) 1991-09-25

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