JPH0288977A - Method for testing semiconductor device - Google Patents

Abstract

PURPOSE:To instantaneously discriminate the propriety of a semiconductor device by inspecting the internal disconnection of the semiconductor device by simultaneously supplying electric currents from plural current sources to plural terminals of the semiconductor device and simultaneously reading the voltages across each terminal. CONSTITUTION:Electric currents from plural current sources 2 which are driven by a power source 1 are simultaneously supplied to plural terminal 4a-4n of a semiconductor device 4 to be tested through simultaneously opening and closing plural switches 3. In addition, the electric currents from the current sources 2 are supplied to an amplifier 6 through plural diodes 5 and fetched as an output voltage V0. When no internal disconnection exists in the device 4, the potential at each terminal 4a-4n is low and the output voltage V0 of the amplifier 6 is low, but, when internal disconnection exists, the voltage across the terminal connected with the disconnected part becomes extremely high and the output voltage V0 also becomes higher. Therefore, when the pointer of the measuring instrument scales out, the internal disconnection can be discriminated.

Description

DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to a semiconductor device testing method for efficiently measuring disconnection in a semiconductor device.

2. Description of the Related Art Generally, in order to conduct a disconnection test inside a semiconductor device, as shown in FIG. Flow through switch 3 between terminals 4a * 4b,
The voltage generated between these terminals was measured with a voltmeter 7.

In this way, the voltage value on the voltmeter 7 will be low when there is no internal disconnection, and will be high when there is a disconnection, so it is possible to measure the internal disconnection based on the display on the voltmeter 7. can.

Problems to be Solved by the Invention However, with such conventional methods, when the DUT 4 becomes large-scale and has a large number of terminals, it is necessary to automatically switch adjacent terminals one after another and measure all terminals. Therefore, the number of test items increases, the test time becomes longer, and the inspection cost becomes higher.

The present invention provides a method for testing semiconductor devices that solves these conventional problems.

Means for Solving the Problems The present invention connects the ground terminal of the DUT to a reference potential point, simultaneously supplies current from a current source to multiple terminals of the DUT, and simultaneously reads the voltages generated at the multiple terminals. This is used to measure wire breakage within the DUT.

By doing this, if there is a disconnection inside the DUT, the voltage at the terminal connected to the disconnection point will increase, so by measuring the change in voltage, it is possible to instantly determine whether the DUT is defective.

Example An embodiment of the present invention will be described below with reference to FIG.

In FIG. 1, currents from a plurality of current sources 2 driven by a power source 1 are simultaneously supplied to a plurality of terminals 4a to 4n of a DUT 4 via a plurality of switches 3 that open and close simultaneously. Further, the current from each current source 2 is applied to an amplifier 6 via a plurality of diodes 5, and taken out as an output voltage Vo. The ground terminal 4m of the DUT is connected to a reference potential point (ground in this example).

Next, the operation will be explained.

When there is no internal disconnection in the DUT 4, the current from each current source 2 passes through the internal wiring, reaches the ground terminal 4m, and flows to the ground. At this time, a predetermined potential is generated at each terminal 48 to 4n, but the voltage value is small. Therefore, the output voltage Vo of the amplifier 6 is also small.

However, if there is a break inside, it will break! The voltage at the terminal connected to sM becomes extremely large. As a result, the output voltage V
O also becomes larger. Therefore, if the output voltage Vo of the amplifier 6 is connected to a measuring device (not shown), it can be seen that there is an internal disconnection when the needle of the measuring device swings out. Furthermore, it is also possible to automatically determine whether the product is good or bad using a voltage comparator or the like.

Effects of the Invention The present invention tests for internal disconnections in the DUT by simultaneously applying current from a current source to multiple terminals of the DUT and reading the voltage at each terminal at the same time.
Even for a DUT having a large number of terminals, pass/fail judgment can be made in an instant, and testing time can be significantly shortened.

[Brief explanation of drawings]

FIG. 1 is a circuit diagram showing a method for testing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a circuit diagram showing a conventional method for testing a semiconductor device. l...Power supply, 2...Current source, 3...
...Switch, 4...Semiconductor device under test, 4
a to 4n...terminal, 4m...ground terminal, 5...diode, 6...amplifier. Agent's name: Patent attorney Shigetaka Awano Idiot 1 person 1--Den Toro? -・t Current flow 3-...Sui Rich 4・-'If turbidity setting rod jL# Shallow straight Figure 7-Voltmeter

Claims (1)

[Claims] The ground terminal of the semiconductor device under test is connected to a reference potential point, current from a current source is simultaneously supplied to multiple terminals of the semiconductor device under test, and the voltages generated at the multiple terminals are simultaneously read. A method for testing a semiconductor device, characterized by measuring a disconnection in the semiconductor device under test.