JPH03109256A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPH03109256A JPH03109256A JP1245979A JP24597989A JPH03109256A JP H03109256 A JPH03109256 A JP H03109256A JP 1245979 A JP1245979 A JP 1245979A JP 24597989 A JP24597989 A JP 24597989A JP H03109256 A JPH03109256 A JP H03109256A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- pts
- porcelain
- compsn
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims description 10
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 11
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000001354 calcination Methods 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000005245 sintering Methods 0.000 description 9
- 238000010304 firing Methods 0.000 description 7
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 235000010216 calcium carbonate Nutrition 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は誘電体磁器組成物、特に、大容量の積層コンデ
ンサの誘電体材料として有用な磁器組成物に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a dielectric ceramic composition, and particularly to a ceramic composition useful as a dielectric material for a large-capacity multilayer capacitor.
(従来の技術)
従来、Niその他の卑金属の使用を内部電極材料として
使用するため、還元性雰囲気で焼成可能な誘電体磁器が
開発され、実用に供されている。(Prior Art) In order to use Ni and other base metals as internal electrode materials, dielectric ceramics that can be fired in a reducing atmosphere have been developed and put into practical use.
例えば、JISに規定するF特性又はE特性の積層コン
デンサ用誘電体材料としては、BaTi0+CaZrO
s系あるいは(BaCa)TiO*系磁器組成物が採用
されている。For example, as a dielectric material for multilayer capacitors with F characteristics or E characteristics specified in JIS, BaTi0+CaZrO
S-based or (BaCa)TiO*-based ceramic compositions are employed.
(発明が解決しようとする課題)
しかしながら、この種の磁器組成物は焼結性が悪いため
高誘電率化を図る際、高温(通常、13oo’c程度)
での焼成が必要であり、しかも、焼成時に結晶粒の成長
が避けられず、結晶粒径が5〜10μm程度の結晶粒の
ものしか得られないことから、セラミック誘電体層を薄
層化して積層セラミックコンデンサを大容量化すること
は極めて困難であった。(Problems to be Solved by the Invention) However, since this type of porcelain composition has poor sintering properties, it is necessary to use it at high temperatures (usually around 13 oo'c) when achieving a high dielectric constant.
However, since the growth of crystal grains is unavoidable during firing and only crystal grains with a crystal grain size of about 5 to 10 μm can be obtained, the ceramic dielectric layer is made thinner. It has been extremely difficult to increase the capacity of multilayer ceramic capacitors.
従って、本発明は、誘電体磁器組成物の焼結性を高めて
より低い温度での焼結を可能にし、かつ、焼成時の結晶
粒の成長の抑制を図ることを基本的課題とするものであ
る。Therefore, the basic objective of the present invention is to improve the sintering properties of a dielectric ceramic composition to enable sintering at a lower temperature, and to suppress the growth of crystal grains during firing. It is.
(課題を解決するための手段)
本発明は、前記課題を解決するための手段として、一般
式:
%式%)
≦1.020)で表される複合酸化物を主成分とし、こ
れに複合酸化物100重量部に対し、副成分としてBa
Oを0.03〜2.4重量部、SiO2を0.05〜2
.4重量部、要すればMnOを0.30重量部以下含有
させるようにしたものである。(Means for Solving the Problems) As a means for solving the problems described above, the present invention has as a main component a composite oxide represented by the general formula: % formula %) ≦1.020), Ba as a subcomponent to 100 parts by weight of oxide
0.03 to 2.4 parts by weight of O, 0.05 to 2 parts of SiO2
.. The content of MnO is 4 parts by weight, and if necessary, 0.30 parts by weight or less.
(作用)
本発明においては、(Bat−x−ycaxMgy)m
(ri、−zzrz)Osで表される複合酸化物に対し
所定量添加された副成分、即ち、BaO及び5ift、
あるいはそれらとMnOが、焼成時に結晶粒界にガラス
層を形成し、これが各結晶粒子を被覆するフラックスと
して作用して液相焼結を行なわせる。(Function) In the present invention, (Bat-x-ycaxMgy)m
(ri, -zzrz) Subcomponents added in predetermined amounts to the complex oxide represented by Os, namely BaO and 5ift,
Alternatively, these and MnO form a glass layer at the grain boundaries during firing, and this acts as a flux that coats each crystal grain to perform liquid phase sintering.
このため、低い焼成温度でも焼結が進行し、かつ、結晶
粒の成長が抑制され、その微細化を達成するのを可能に
している。また、主成分である前記複合酸化物に副成分
が有機的に作用して電気的特性を向上させる。Therefore, sintering progresses even at low firing temperatures, and the growth of crystal grains is suppressed, making it possible to achieve finer grain size. Further, the subcomponents act organically on the composite oxide, which is the main component, to improve the electrical characteristics.
本発明の主成分の組成を前記範囲に限定したのは次の理
由による。The reason why the composition of the main component of the present invention is limited to the above range is as follows.
即ち、前記主成分である複合酸化物は一般式=ABO,
で表されるが、Aサイトに於けるCaのモル分率、xl
が0.05未満では静電容量温度変化率(T Ccap
)が大きくなって、E特性を満足する磁器が得られず、
また、Xが0.20を越えると、焼結しないので、Xは
0.05〜0.20の範囲とした。That is, the composite oxide which is the main component has the general formula =ABO,
The mole fraction of Ca at the A site, xl
is less than 0.05, the capacitance temperature change rate (T Ccap
) becomes large, making it impossible to obtain porcelain that satisfies the E characteristics.
Further, if X exceeds 0.20, sintering will not occur, so X was set in the range of 0.05 to 0.20.
Mgのモル分率、y、が0.001未満では焼結せず、
0.01を越えると、静電容量温度変化率が大きくなっ
てE特性を満足する磁器が得られないので、yはo、o
ot〜0.Olの範囲とした。When the molar fraction of Mg, y, is less than 0.001, no sintering occurs,
If it exceeds 0.01, the rate of change in capacitance with temperature will increase and it will not be possible to obtain a porcelain that satisfies the E characteristic.
ot~0. It was set as the range of Ol.
また、Bサイトに於けるZrのモル分率% Z’%が0
.10未満では焼結せず、0.20を越えると静電容量
温度変化率が大きくなってE特性を満足する磁器が得ら
れないので、2は0.10〜0.20の範囲とした。In addition, the mole fraction % Z'% of Zr at the B site is 0
.. If it is less than 10, sintering will not occur, and if it exceeds 0.20, the capacitance temperature change rate will increase and a porcelain satisfying the E characteristic cannot be obtained, so 2 is set in the range of 0.10 to 0.20.
AサイトのBサイトに対するモル比% 11%が0.9
90未満では還元性雰囲気で焼成する際に還元され所望
の電気的特性が得られず、また、1.020を越えると
焼結しないので、―は0.990〜1.020の範囲と
した。Molar ratio % of A site to B site 11% is 0.9
If it is less than 90, it will be reduced during firing in a reducing atmosphere and the desired electrical characteristics will not be obtained, and if it exceeds 1.020, it will not sinter, so - was set in the range of 0.990 to 1.020.
また、副成分の主成分100重量部に対する含有量を前
記範囲に限定したのは次の理由による。The reason why the content of the subcomponent based on 100 parts by weight of the main component is limited to the above range is as follows.
即ち、BaOの含有量が0.03重量部未満または2.
4重量部超では、結晶粒の成長が進むので、前記範囲と
した。また、S iOtの含有量が0.05重量部未満
では焼結しなくなり、2.4重量部超では結晶粒の成長
が起こるので前記範囲とした。That is, the content of BaO is less than 0.03 parts by weight or 2.0 parts by weight.
If it exceeds 4 parts by weight, the growth of crystal grains will proceed, so it was set in the above range. Furthermore, if the SiOt content is less than 0.05 parts by weight, sintering will not occur, and if it exceeds 2.4 parts by weight, crystal grain growth will occur, so the above range was set.
さらに、MnOは焼成温度を低くするという役割を有す
るが、MnOが0.30重量部を越えると絶縁抵抗が低
下するので、MnOの含有量は0.30重量部以下とし
た。なお、このMnOは必ずしも含有させる必要は無い
。Furthermore, although MnO has the role of lowering the firing temperature, if MnO exceeds 0.30 parts by weight, the insulation resistance decreases, so the content of MnO was set to 0.30 parts by weight or less. Note that this MnO does not necessarily need to be included.
(実施例)
主成分の出発原料として、B aCO3,CaCO3、
M g COs 、 T i Oを及びZrOを用い、
これらを生成物である複合酸化物が第1表の組成となる
ように調合し、湿式混合した後、1100℃で2時間仮
焼し、次いで粉砕して、仮焼粉末を得た。この仮焼粉末
100重量部に対し、BaCO3、SiO2およびMn
Oをそれぞれ第1表に示す割合で添加し、1190℃で
熱処理した後、バインダーを加えて造粒し、これを整粒
した後、直径10mo+、厚さ111−の円板状に成形
した。得られた成形物を自然雰囲気中350℃で焼成し
てバインダーを除去した後、N、とOlからなる還元性
雰囲気中、酸素分圧10−Torr、 1200°C
の条件下で焼成した。(Example) As starting materials for the main components, BaCO3, CaCO3,
Using M g COs , T i O and ZrO,
These were mixed so that the composite oxide product had the composition shown in Table 1, wet mixed, calcined at 1100° C. for 2 hours, and then crushed to obtain calcined powder. BaCO3, SiO2 and Mn were added to 100 parts by weight of this calcined powder.
After adding O in the proportions shown in Table 1 and heat-treating at 1190°C, a binder was added and granulated, the granules were sized and formed into a disk shape with a diameter of 10 mo+ and a thickness of 111-. The obtained molded product was fired at 350°C in a natural atmosphere to remove the binder, and then heated at 1200°C at an oxygen partial pressure of 10-Torr in a reducing atmosphere consisting of N and Ol.
It was fired under the following conditions.
得られた各磁器円板の両面に常法により銀電極を焼き付
けて試料とした。Silver electrodes were baked on both sides of each of the obtained porcelain disks using a conventional method to prepare a sample.
各試料について、25°Cでの比誘電率(εr)、誘電
体損失(DF、tanδ)、静電容量温度変化率(TC
cap)を求めた。なお、TCc6pは+25°Cでの
静電容量を基準値とし、該基準値に対する一25℃およ
び+85°Cでの静電容量の温度変化率を求めた。その
結果を第2表に示す。表中、*は本発明の範囲外のもの
を示す。For each sample, the relative permittivity (εr), dielectric loss (DF, tanδ), capacitance temperature change rate (TC
cap) was determined. For TCc6p, the capacitance at +25°C was taken as a reference value, and the rate of change in capacitance with temperature at -25°C and +85°C with respect to the reference value was determined. The results are shown in Table 2. In the table, * indicates something outside the scope of the present invention.
また、各磁器について、結晶粒の大きさを測定したとこ
ろ、いづれも3μ以下であった。Furthermore, when the crystal grain size of each porcelain was measured, it was found to be 3 μm or less in all cases.
(以 下 余 白)
第2表の結果から、本発明に係る誘電体磁器組成物は、
8600にも達する高誘電率を示し、また、誘電体損失
が1.3%未満で、静電容量変化率も+20%〜−55
%の範囲内の値を示す。(Left below) From the results in Table 2, the dielectric ceramic composition according to the present invention
It exhibits a high dielectric constant of up to 8600, has a dielectric loss of less than 1.3%, and has a capacitance change rate of +20% to -55.
Indicates a value within the range of %.
(効果)
本発明によれば、従来のものよりより約100°C低い
温度、即ち、1200℃以下の温度で焼成できるので、
省エネルギー化を図ることができ、また、粒子の微細化
と高誘電率化を図ることができるので、磁器誘電体層の
薄肉化を図り、JISに規定するE特性を満足する大容
量の磁器コンデンサを製造することができるという優れ
た効果を特する(Effects) According to the present invention, firing can be performed at a temperature approximately 100°C lower than that of conventional methods, that is, at a temperature of 1200°C or less.
Energy saving can be achieved, and the particles can be made finer and the dielectric constant can be increased, so the ceramic dielectric layer can be made thinner and a large capacity ceramic capacitor that satisfies the E characteristics stipulated by JIS. It is characterized by the excellent effect of being able to manufacture
Claims (2)
i_1_−_xZr_x)O_3(但し、0.05≦x
≦0.20、0.001≦y≦0.01、0.10≦z
≦0.20、0.990≦m≦1.020)で表される
複合酸化物を主成分とし、副成分として前記複合酸化物
100重量部に対し、BaOを0.03〜2.4重量部
、およびSiO_2を0.05〜0.8重量部含有して
なる誘電体磁器組成物。(1) General formula: (Ba_1_−_x_−_yCa_xMg_y)m(T
i_1_−_xZr_x)O_3 (however, 0.05≦x
≦0.20, 0.001≦y≦0.01, 0.10≦z
≦0.20, 0.990≦m≦1.020) as the main component, and 0.03 to 2.4 parts by weight of BaO per 100 parts by weight of the complex oxide as a subcomponent. and 0.05 to 0.8 parts by weight of SiO_2.
i_1_−_xZr_x)O_3)(但し、0.05≦
x≦0.20、0.001≦y≦0.01、0.10≦
z≦0.20、0.990≦m≦1.020)で表され
る複合酸化物を主成分とし、副成分として前記複合酸化
物100重量部に対し、BaOを0,03〜2.4重量
部、SiO_2を0.05〜0.8重量部、MnOを0
.30重量部以下含有してなる誘電体磁器組成物。(2) General formula: (Ba_1_−_x_−_yCa_xMg_y)m(T
i_1_−_xZr_x)O_3) (However, 0.05≦
x≦0.20, 0.001≦y≦0.01, 0.10≦
z≦0.20, 0.990≦m≦1.020) as the main component, and as a subcomponent, 0.03 to 2.4 parts of BaO is added to 100 parts by weight of the complex oxide. Part by weight, 0.05 to 0.8 part by weight of SiO_2, 0 part by weight of MnO
.. A dielectric ceramic composition containing 30 parts by weight or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1245979A JPH03109256A (en) | 1989-09-20 | 1989-09-20 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1245979A JPH03109256A (en) | 1989-09-20 | 1989-09-20 | Dielectric porcelain composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03109256A true JPH03109256A (en) | 1991-05-09 |
Family
ID=17141678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1245979A Pending JPH03109256A (en) | 1989-09-20 | 1989-09-20 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03109256A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06203633A (en) * | 1992-12-29 | 1994-07-22 | Taiyo Yuden Co Ltd | Dielectric ceramic and ceramic capacitor |
| JPH06203635A (en) * | 1992-12-29 | 1994-07-22 | Taiyo Yuden Co Ltd | Dielectric ceramic and ceramic capacitor |
| US5453409A (en) * | 1991-06-05 | 1995-09-26 | Taiyo Yuden Co., Ltd. | Ceramic capacitor and method for fabricating the same |
| US5604166A (en) * | 1995-02-14 | 1997-02-18 | Tdk Corporation | Dielectric ceramic composition |
| CN114262219A (en) * | 2021-12-31 | 2022-04-01 | 北京元六鸿远电子科技股份有限公司 | Microwave dielectric ceramic material with ultrahigh temperature stability and preparation method and application thereof |
-
1989
- 1989-09-20 JP JP1245979A patent/JPH03109256A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5453409A (en) * | 1991-06-05 | 1995-09-26 | Taiyo Yuden Co., Ltd. | Ceramic capacitor and method for fabricating the same |
| JPH06203633A (en) * | 1992-12-29 | 1994-07-22 | Taiyo Yuden Co Ltd | Dielectric ceramic and ceramic capacitor |
| JPH06203635A (en) * | 1992-12-29 | 1994-07-22 | Taiyo Yuden Co Ltd | Dielectric ceramic and ceramic capacitor |
| US5604166A (en) * | 1995-02-14 | 1997-02-18 | Tdk Corporation | Dielectric ceramic composition |
| CN114262219A (en) * | 2021-12-31 | 2022-04-01 | 北京元六鸿远电子科技股份有限公司 | Microwave dielectric ceramic material with ultrahigh temperature stability and preparation method and application thereof |
| CN114262219B (en) * | 2021-12-31 | 2022-09-06 | 北京元六鸿远电子科技股份有限公司 | Microwave dielectric ceramic material with ultrahigh temperature stability and preparation method and application thereof |
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