JPH03109721A - Equipment for manufacturing semiconductor by mo-cvd method - Google Patents

Abstract

PURPOSE:To manufacture in a high efficiency by introducing a tray, mounting and dismounting a wafer during stop of a susceptor by using the rotation of the susceptor by fixing relative positions of both during the rotation. CONSTITUTION:A wafer 31 is mounted on a tray 32, and indirectly mounted on a stopping susceptor 33. Accordingly, loading and unloading can extremely easily and rapidly be preformed, and cleaning of the wafer can be proved. On the other hand, when the susceptor 33 is started to rotate, a locking mechanism 100 is operated to fix the relative positions of the wafer 31 and the susceptor 33. The faster the rotation of the susceptor 33 becomes, the stronger they are fixed. Thus, the positional deviation, scattering, damage, etc., of the wafer 31 are prevented, and uniform semiconductor of high quality can efficiently be manufactured.

Description

[Detailed description of the invention] [Industrial application field] The present invention uses the MO-CVD method. Regarding.

Semiconductor manufacturing equipment [Conventional technology 1 For example, trimethyl gallium on a gallium arsenide wafer,
Promote epitaxial growth using arsine gas, etc., and use organic metals on silicon wafers to
Semiconductors are developed by forming a film of It-IV group compound semiconductor, forming a high dielectric oxide film on a silicon wafer using organic tantalum mixed with oxygen, or forming a superconducting film on a silicon wafer. The so-called MO-CVD (Metal Organ
n-ic-Chemical Vaper Dep
.

si/1ion) method is widely used.

For example, compound semiconductors are manufactured using trimethyl gallium, arsine gas, etc. on gallium arsenide wafers.
A typical configuration of an O-CVD semiconductor manufacturing apparatus (hereinafter simply referred to as the apparatus) is shown in FIGS. 4 and 5.

FIG. 4 shows a so-called horizontal apparatus in which a reaction gas is brought into contact with a wafer 31 in a parallel flow.
For example, the inside of the reaction chamber 10 is 70
It is composed of heating means 50 and the like for heating to an appropriate temperature such as 0°C.

In addition, since the wafer 31 rapidly reacts and deteriorates when it comes into contact with oxygen, in order to ensure airtightness during loading and unloading of the wafer 31, a load lock chamber 3 connected to the reaction chamber 10 and a double-dashed chain line are also provided. This is a so-called two- or three-chamber one-lock system, which is provided with a second load-lock chamber 4 as shown in FIG. Therefore, loading and unloading of the wafer 31 is as follows:
Instead of the door 5 that operates the culm machine side 8 of the susceptor 33 and closes during reaction work, a door 6 shown by a two-dot chain line isolates the first chamber (reaction chamber 10) and the second chamber load lock chamber 3,
Similarly, the load lock chamber 3 and the second load lock chamber 4 forming the third chamber are carefully separated.

In addition, 12 is a reaction gas supply port, 13 is a reaction gas exhaust port,
Reference numeral 16 denotes a gas versilor for purging or vacuuming with N2 gas or the like. Further, 14° 15 is an entry/exit hole for the wafer 31.

Here, the reaction gas is applied to the wafer 31 heated to an appropriate temperature.
The inner wall surface 10a of the reaction chamber 10 is designed to promote epitaxial growth by contacting with
It should be a so-called cold wall that must be kept below an appropriate temperature. Therefore, the heating means 50
Generally, this is an induction heating method consisting of a coil or the like provided outside the reaction chamber 10 and connected to a high frequency power source. Therefore, the reaction chamber 10 is made of quartz glass.

Therefore, in the reaction chamber 10, for example, trimethylpotassium [
(CH3) s Ga ], hydrogen gas [H2] arsine gas [ASH3] + phosphine gas [PH3], and the like, and the heating means 50 heats the wafer 31 made of, for example, gallium arsenide [GaAs] and the reactive gas, for example. By heating to 700° C., epitaxial growth can be promoted on the wafer 31 to manufacture a compound semiconductor.

On the other hand, the apparatus shown in FIG. 5 (components common to those in FIG. 4 are denoted by the same reference numerals) has a so-called vertical structure in which a reactive gas is brought into contact with the wafer 31 from a perpendicular direction.

In this structure as well, the reaction chamber 10 is made of quartz glass so that the heating means 50 uses an induction heating method for the above-mentioned reasons. Therefore, the reaction chamber 10 of the wafer 31
The reaction chamber 10 can be placed at a convenient height for work, such as by moving it in and out of the reaction chamber 10 from a viewing window, since the installation space in the horizontal direction is small. .

In order to increase productivity, it is necessary not only to arrange the loading and unloading devices in the appropriate locations, but also to make the loading and unloading operations themselves easier and faster.
The wafer 31 must be kept clean from the viewpoint of high quality assurance.

Furthermore, in order to achieve high-efficiency and high-speed production, especially in the case of a vertical structure, since the reactive gas is supplied vertically to the wafer 31, it is necessary to promote its effective contact.

In this regard, the following improved device, taking the vertical type as an example, was developed by a US company (EMCORE Corporation).
on> has been proposed.

That is, as shown in FIG. 6, the wafer 31 is rotated together with the susceptor 33 by a motor 44 at a high speed of, for example, 120 rpm for highly efficient operation. The technical reason for this is that in the vertical type, the reaction gas becomes turbulent, as shown by point aB in Figure 6, and the solid-gas contact efficiency is poor. It is assumed that the gas flow becomes a flow parallel to the wafer 31 and a laminar flow. The applicant confirmed this to be true.

[Problem to be solved by the invention 1 However, none of the above conventional methods'! Even in the case of f/J dispatch, it is not possible to satisfy all the requirements such as high quality assurance, mass-prompt production, equipment economy, etc., and a solution to this problem is strongly desired.

That is, this is because it has the following problems.

■ The wafer 31 is directly attached to the susceptor 33.
In order to remove the susceptor 33, the structure of the susceptor 33 becomes large and complicated, and installation and removal become complicated.

In particular, with the rotation method of the susceptor 33, even if the above-mentioned item (2) is achieved with considerable sacrifice, the wafer 31 moves on the susceptor 33 as it rotates at high speed, making it impossible to process uniformly. Since the mechanical properties of gallium arsenide etc. forming 31 are weak, the susceptor 3
If relative displacement with 3 occurs suddenly, there is a strong risk of destruction.
Furthermore, this is a factor that inhibits high-speed rotation of the negative layer.

The above problems are also common to MO-CVD methods using the other methods mentioned above.

The present invention has been made in view of the above circumstances, and its purpose is to enable easy and quick attachment and detachment of a wafer to a susceptor, and to maintain the wafer and susceptor integrally during rotation of the susceptor. MO-C allows for easy loading and unloading operations and enables highly efficient production of high-quality semiconductors at higher rotation speeds.
An object of the present invention is to provide a semiconductor manufacturing device using the VD method.

[Means for Solving the Problems] The present invention introduces a tray and skillfully utilizes the rotational movement of the susceptor, so that it is easy to attach and remove a wafer while the susceptor is stopped, and during the rotational movement, both The above object is achieved by having a structure in which relative positions are firmly fixed.

That is, in a semiconductor manufacturing apparatus using the MO-CVD method in which a susceptor for holding a wafer is rotatably provided in a reaction chamber, the wafer is held by the susceptor via a tray formed to be removably attached to the susceptor, and the susceptor The present invention is characterized in that a locking mechanism is provided that integrally connects the susceptor and the tray by using the rotational force during the rotation operation of the susceptor and fixes the relative position of the susceptor and the wafer.

[Operation] In the present invention having the above configuration, the wafer is attached to the tray and indirectly attached to the susceptor while it is stopped. Therefore, loading and unloading can be performed extremely easily and quickly, and cleaning of the wafer can also be guaranteed.

On the other hand, when the susceptor begins to rotate, the locking mechanism is activated to fix the relative position of the wafer and the susceptor.

The faster the susceptor rotates, the stronger it becomes.

Therefore, wafer misalignment, scattering damage, etc. are prevented, and uniform, high-quality semiconductors can be efficiently manufactured.

[Example] Embodiments of the present invention will be described below with reference to the drawings.

This embodiment is a semiconductor TxI manufacturing apparatus using the MO-CVD method for epitaxially growing on a gallium arsenide wafer, and is a vertical type apparatus as shown in FIGS. 1 and 3, and is roughly divided into a reaction chamber 10 and a wafer Rotating mechanism 30 and heating means 5
0 and a rectifying mechanism 70, and is particularly provided with a locking mechanism 10 that works in cooperation with the wafer rotation mechanism 30.

That is, the susceptor 33 that holds the wafer 31 is of a rotating type, and the locking device 1100 fixes the relative position of the rotating susceptor 33 and the wafer 31 via the tray 32, and when the susceptor 33 stops, the wafer 31 is rotated. 31 can be easily removed from the susceptor 33.

In addition, we guarantee high quality for the entire device, mass-prompt production,
In order to further improve equipment economy and safety in terms of personal protection, the heating means 501, reaction chamber 10, etc. have a special configuration,
A rectifying mechanism 70 is also provided.

The heating means 50 includes a heat source 61 housed in a closed space 53 provided below the susceptor 33, and is disposed in the internal space 18 of the reaction chamber 10 to heat the wafer 31 by radiation. The entire reaction chamber 10 is made of metal instead of quartz glass. Moreover, the heating means 50 includes a double cylindrical body 51 made of quartz glass forming a sealed space 53, and uses the space 52 to rotate the wafer 30 m horizontally.
The rotary shaft 34 of the rotary shaft 34 can be penetrated through the rotary shaft 34, and a temperature detecting means 39 is provided using the hollow portion 37 of the rotary shaft 34, so that the temperature of the wafer 31 and the susceptor 33 can be accurately and quickly detected. There is.

Further, in order to facilitate the loading/unloading work of the wafer 31, the wafer inlet/outlet hole 14.15 is provided in the reaction chamber 10 at approximately the same height as the susceptor 33.The four reaction chambers 10 are the first chambers of the load lock. It forms the

Furthermore, a rectification mechanism 70 is provided to prevent the wafer inlet/outlet holes 14, 15 and viewing windows (not shown) from causing disturbances in the supplied reaction gas even when the wafer 31 is rotated at high speed, thereby further achieving highly efficient and uniform epitaxial growth due to high speed rotation. It is designed to improve things. Then, the rectifying member 71 that exerts the rectifying effect of the rectifying mechanism 70 is connected to the wafer inlet/outlet hole 14 during loading/unloading work.
The susceptor 33 can be moved downward from the outside so as to open the susceptor 33.

Below, each component will be separated in detail.

As shown in FIG. 3, the reaction chamber 10 consists of a cylindrical main body 11 with a canopy and a base 21 forming a bottom cover thereof, and is sealed via an O-ring 48 to form an internal space 18. That is, metal (in this example, stainless steel)
) is formed as a sealed container, eliminating the problem of leakage of highly toxic reaction gases caused by damage to conventional quartz glass containers.

A reactive gas supply port 12 is provided above the main body 11, and wafer inlet holes 14 are provided on both sides. An exit hole 15 is provided. Further, on the lower side, there are provided a reaction gas outlet 13 and a gas barge 16 for use in a gas barge or vacuuming.

Here, the wafer inlet hole 14 supplies a new wafer 31 from the loading chamber 3 to the susceptor 33 (tray 32), and the wafer outlet hole 15 supplies the new wafer 31 to the susceptor 33 (tray 32).
This is for taking out the product (31) on the (tray 32) into the chamber on the right side (not shown in FIG. 3). That is, since the reaction chamber 10 is made of metal, the wafer inlet hole 14° and the outlet hole 15 can be easily provided. Therefore, loading and unloading work is carried out in the reaction chamber 1.
Since it can be carried out at a height of zero, it is possible to ensure speed, reliability and ease of work.

In addition, the tip part 7 can be freely moved in the X direction and the Z direction by a handling means.

Reference numeral 3-1 indicates a gas versilor used for evacuation, etc., and reference numeral 3-2 indicates a gate valve that isolates the loading chamber 3 from the reaction chamber 10 during reaction.

Further, a filter 79 is provided in the reaction chamber 10@ of the gate valve 3-2 and is formed to be movable up and down by a shaft 78 connected to a cylinder device (not shown) or the like. This is to completely prevent dust and the like from entering the loading chamber 3 from the reaction chamber 10 side during the loading operation.

On the other hand, the base body 21 can be removed from the main body 11 when necessary. A large diameter through hole 22. Electrode hole 27. Purge hole 53-1. A small diameter through hole 23 is provided, and a hook 24 is integrally provided on the upper surface side in FIG.

Further, at the lower part of the base body 21, a leg portion 21. a is provided, and a gas vershilo 19-1 is also provided here.

Here, the wafer rotation mechanism 30 is a means for rotating the wafer 31 at high speed in the internal space 18 of the reaction chamber 10, and includes a carbon-based susceptor 33 that holds the wafer 31 via a tray 32, and this susceptor 33. Rotating shaft 3 integrally connected via rotation stopper 36
4, and a drive means (
It is formed from pulleys 41, 42, a belt 43, and a motor 44).

The shaft portion 3 of the susceptor 33 ensures this perfect circular rotation.
3-1 is a double cylindrical body 51 which will be described in detail later through a bearing 35.
The lower end of the rotating shaft 34 is rotatably supported by two magnetic seals attached to the bottom cover body 28.

The rotating shaft 34 is formed from a hollow shaft member having a hollow portion 37, and three temperature detecting means formed from thermocups or the like are attached to the hollow portion 37. Therefore, the temperature can be accurately detected in the vicinity of the wafer 31 (susceptor 33), which greatly contributes to high-quality manufacturing.

Of course, since the rotating shaft 34 rotates in a perfect circle, no external mechanical force such as twisting is applied to the temperature detection means 39.
Also, there is no contact with reactive gases.

In addition, entrance/exit holes 14 and 15 are provided to match the height of the wafer 31 which is rotatably held.

Now, the lock mechanism 10 which is one of the technical features of the present invention
As shown in FIGS. 1 and 2, the susceptor 33 is configured to include a plurality (a pair in this embodiment) of centrifugal force operating pieces 102 and 102, and utilizes the rotational force during the rotation of the susceptor 33 to operate the susceptor 33. 33 and the tray 32 are connected in seven pieces, and the relative positions of both 31 and 33 are fixed.

That is, the wafer 31 is transferred to the susceptor 33 via a tray 32 that is removably attached to the susceptor 33 in order to facilitate and speed up loading and unloading operations.
This mechanism 100 is provided in order to allow the susceptor 33 to more than fully perform its original function of high-speed rotation even in such a configuration.

In detail, as shown in Figs. 1 and 2, the susceptor 3
A pair of centrifugal force operating pieces 102, 1 that come into contact with and separate from the inner circumferential surface 32a of the tray 32 are easily attached and detached by a fitting method.
02 is provided. Each centrifugal force operating piece 102 is disposed within a notch 33a of the susceptor 33, and is rotatably mounted with a screw 101. Therefore, susceptor 3
3 is at rest, the centrifugal force actuating piece 102 is housed in the notch 33a, as shown on the right side of the axis Y in FIG. As shown, it is biased to protrude and come into pressure contact with the inner circumferential surface 32a.

The protruding action of the centrifugal force actuating pieces 102, 102 becomes stronger as the rotational speed of the susceptor 33 increases, and the point of protrusion is adjusted by the tightening force of the screws 101, 101 of the washers 103, 103. In this sense, the screw 101
For example, a spiral spring S as shown by the dotted line in FIG. 2 may be interposed between the centrifugal force actuating piece 102 and the centrifugal force operating piece 102 for adjustment. In this way, when the susceptor 33 stops, the actuating piece 102 can be quickly accommodated in the notch 33a.

The wafer 31 and the tray 32 are connected to each other by an appropriate means such as fixation using a spring biasing piece or vacuum suction.
The wafer 31 is fitted into the wafer 2b.

The heating means 50 is roughly divided into a double cylindrical body 51 and a heat source (61).

The double cylindrical body 51 forms a sealed space 53 in the internal space 18 of the reaction chamber 10 for accommodating a heat source (61) which cannot come into contact with the reaction gas, that is, is isolated, and into which the rotating shaft 34 is inserted as described above. It is for guiding purposes and is integrally formed from quartz glass.

Since this double cylindrical body 51 is housed within the metal reaction chamber 10, even if it is formed from quartz glass, there will be no problem of leakage of reaction gas to the outside.

The double cylindrical body 51 is constructed by fitting the inner long portion 55 into the through hole 22 of the base body 21 via the seal member 25, and then attaching the nut member 2.
6, and a collar portion 54 provided on the outer periphery is engaged with and fixed to the hook 24. However, 2
It is understood that the middle portion of the heavy cylindrical body 51 forms a closed space '53.

The electrode hole 27 provided in the base body 21 and the gas persilloid 53 - 1 are provided in a position communicating with this sealed space 53 .

Here, the heat source is a carbon-based divided heater 6 disposed close to the upper part of the closed space 53, that is, below the susceptor 33.
1.61. ..., a lead member 62, a ceramic electrode so-called hermetic electrode 63 formed integrally with a metal cylinder 64, a power supply member 65 for connecting to an external power supply device, and a reflecting mirror 67. There is.

That is, the heat source in this embodiment is a plurality of carbon fiber electrodes that generate a large amount of heat per unit area, and by dividing them in the radial direction, the radial temperature distribution of the wafer 31 can be appropriately controlled. It consists of a radiant heating system.

In addition, due to the cooperation between the heat source and the lock aitoo, the wafer 31 can be accurately heated with a predetermined temperature distribution even during high-speed rotation. By keeping the inside of the sealed space 53 in a vacuum during use, its deterioration can be prevented.

In this way, by using a carbon-based electrode as the heat source,
Compared to conventional heating methods using metal resistors, halogen lamps, etc., the device is more compact, and since there is no need to provide cooling means unlike in the case of halogen lamps, it is possible to simplify equipment and eliminate reactant gas leakage sites.

Subsequently, the rectifier tIltfs 70 closes the wafer inlet/outlet hole 14.15 during the reaction operation, rectifies the reaction gas from the reaction gas supply port 12 toward the wafer 31, and closes the wafer inlet/outlet hole 14.15 during the loading/unloading operation. .15
It is formed so that it can be displaced from the outside along the inner wall surface 11a of the reaction chamber 10 so as to open it.

That is, even if the reaction chamber 10 is made of metal so that loading and unloading operations can be performed at the height of the reaction chamber 10 (susceptor 33), the entrance/exit hole 1
4.15 has a large diameter for loading and unloading the wafer 31. Furthermore, in order to completely prevent leakage of the reaction gas, it is relatively robust and has a complicated shape with a large recess formed in the inner wall surface 11a.

Then, no matter how fast the wafer 31 is rotated, the characteristic of the wafer rotation type in which the reactive gas forms a laminar flow on the surface of the wafer 31 and maintains good contact is obliterated. The problem becomes even more serious when the susceptor 33 is operated at a lower rotational speed while maintaining the same productivity. Further, if components in the reaction gas adhere and solidify not only on the inner wall surface 11a but also on the inlet/outlet 14.15, the adhered substances become impurities and scatter over time from the upstream side of the wafer 31, making it impossible to achieve high quality.

The rectifying mechanism 70 provided as a solution to this problem is 5, and in this embodiment, a rectifying member 71 made of cylindrical stainless steel.
and a movable body 73 that moves this rectifying member 71 up and down within the reaction chamber 10. The movable body 73 is the base body 2
1 through the through hole 23 via the seal member 48,
It is driven by an externally provided cylinder device (not shown) or the like.

Furthermore, in this embodiment, the rectification effect and the inlet/outlet hole 14.1
In order to more efficiently perform the reliable closing and quick opening/closing operations of 5, a guide member 75 made of a short cylindrical body is provided.

Note that FIG. 3 shows the state during the reaction, and the upper end of the rectifying member 71 is in pressure contact with the seal member (O-ring) 48 provided on the ceiling of the reaction chamber 10, and the inner space 18 is connected to the entrance/exit ports 14 and 15 side. is isolated.

Next, the action will be explained.

Internal space 18 of reaction chamber 10 and loading chamber 3
The gate valve 3 is evacuated using a gas barge or evacuated, and as a final step, the filter 79 is lowered and then the gate valve 3 is evacuated.
-2 is opened.

After completion, the filter 79 is raised and the handling means 7
The wafer 31, which has been previously set on the tray 32 (fitted into the dish portion 32b), is mounted on the susceptor 33 by fitting the tray 32 thereon. Below, wafer 3
There is no need to touch 1 and the cleanliness is maintained. On this occasion,
The rectifying member 71 and the guide member 72 are pulled down.

After setting the wafer 31, the gate valve 32 is closed and the movable body 73 raises the rectifying member 71. The upper end of this rectifying member 71 is brought into contact with an O-ring 48 provided on the canopy of the reaction chamber 10, and the reaction gas inlet/outlet hole 1
The flow to the 4.15 side is blocked.

Next, the heating means 50 is driven to raise the temperature of the wafer 31 to an appropriate temperature of, for example, 700''C while performing radiation heating.

After this stage, the wafer rotation mechanism 30 is driven to rotate the wafer 31, and the six reactive gases supplied from the supply port 12 are rectified and guided by the rectifying member 71 to prevent the generation of turbulence.

On the wafer 31, there is a solid line A in FIG. 6 based on the high speed rotation.
As shown in , a laminar flow is formed and epitaxial growth is promoted with high efficiency. Also in this promotion process, the temperature detection means 39, the carbon fever electrodes 61, 61. ...
Through the cooperation of the above, proper temperature control is achieved.

Here, when the susceptor 33 rotates, the centrifugal force actuating piece 1
02, 102 (lock mechanism 100) acts, and the tray 3
Since the inner circumferential surfaces 102a, 102a of 2 are pressed together, the relative positions of the susceptor 33 and the tray 32 and the wafer 31 remain unchanged, ensuring a predetermined temperature distribution of the wafer 31, and preventing damage due to movement and scattering. There is no.

After the compound semiconductor is completed, the wafer rotation mechanism 30 and the heating means 50 are stopped, and the wafer (product) 31 is pulled out from the wafer exit hole 15 by gas purging in the reaction chamber 10, etc. A new wafer 31 can be supplied from the wafer 31 and the next manufacturing can be performed.

According to this embodiment, the susceptor 33 is rotatable and is provided with a locking mechanism 100 that fixes the relative position of the wafer 31 and the susceptor 33 during the rotation operation. Even if the wafer 31 is rotated at high speed for its intended purpose, the wafer 31 may be misaligned, disrupting uniform temperature distribution, and causing damage due to movement, which has been eliminated, and high-quality semiconductors can be manufactured safely and efficiently. .

The locking mechanism 100 also includes a centrifugal force actuating piece 102.10.
2, and utilizes the rotational force of the susceptor 33, so it operates more firmly and reliably as the susceptor 33 rotates at high speed, and when the susceptor 33 is stopped, the tray 33 can be easily attached and removed, and the loading/unloading Unloading work can be done easily and quickly.

Further, since the wafer 31 is formed to be indirectly mounted on the susceptor 33 via the tray 32, by setting it on the tray 32 in advance, the loading operation can be made easier and faster, and the handling means 7 etc. (i! It can be simplified.

Further, since the tray 32 is fitted onto the susceptor 33 and has a larger diameter than the outer diameter of the susceptor 33, a high degree of processing accuracy is not required and the cost is low.

Further, a rectifier # including a metal reaction chamber 10, a rotatable susceptor 33, a heat source for radiant heating the wafer 31 from below the susceptor 33, that is, a heating means 50, and a rectifier member 71
t1 structure 70, it offers safety in terms of personal protection, high quality, easy handling, improved productivity, and compact size.
It is possible to provide an excellent compound semiconductor manufacturing apparatus that is of high practical value as a whole and can achieve cost reduction, etc. all at once.

In addition, since the reaction chamber 10 is made of metal using a radiation heating method, there is no deformation or destruction, and leakage of the reaction gas can be completely prevented.
, wafer entrances and exit ports 14, 15, etc. can be easily processed at appropriate positions, and loading and unloading operations become ideal and costs are also reduced.

Furthermore, since the reaction chamber 10 is formed of a main body 11 and a detachable base 21, the wafer 31 can be held in place during loading/unloading work, and it can be heated during disassembly and adjustment. Means 50.
Since the rectifying structure 61, 7o, etc. can be pulled out as they are, these operations can be performed quickly, easily, and safely. Further, the rectifier 170 and the inner wall surface 11a of the reaction chamber 10 can be easily cleaned.

Further, the double cylindrical body 51 is engaged with the through hole 22 of the base body 21 and the hook 24, and can be attached and detached using the nut member 26, and since the pot bottom cover #28 can be removed from the leg part 21a, its replacement and cleaning etc. is easy.

In addition, the double cylindrical body 51 that forms the hollow portion 52 and the sealed space 53 has a simple shape, so that no machining distortion or shape distortion remains, and safety is maintained over a long period of time. In addition, even if it should be damaged, it will not cause a leakage problem of the reaction gas because it is housed within the internal space 18 of the metal reaction chamber 10.

The wafer rotation mechanism 30 also includes a susceptor 3 with a tray 32 attached to a rotating shaft 34 that is rotationally driven by a motor 44.
3 is installed by inserting it, so it is easy to assemble. Moreover, the rotating shaft 34 passes through the hollow part 52 of the double cylindrical body 51 via the bearing 35, and its lower end is supported at both ends via the magnetic seal 29, so that it can rotate at high speed in a perfect circle without twisting. I can guarantee it. Therefore, high-quality epitaxial growth and safe posture of the wafer 31 are achieved by establishing a laminar flow of the reactive gas over the wafer 31.

Further, since the rotating shaft 34 is formed from a hollow shaft member, the temperature detecting means 39 can be
This is effective for heating the wafer 31 uniformly or with a predetermined temperature distribution.

Further, since the heating means 50 is of a radiation heating type, not only can the reaction chamber 10 be made of metal, but also a so-called cold wall can be established to efficiently heat the wafer 31.

Further, since the heating means 50 is formed from a carbon-based electrode 61 which has a larger calorific value per unit area than conventional metal resistors, halogen lamps, etc., the present device can be further miniaturized. Moreover, carbon-based electricity @61.61. Since... is considered to be a plurality of things spaced apart in the radial direction,
Not only can the temperature of the wafer 31 be made uniform, but also the temperature distribution over the inside and the outer periphery of the wafer 31 can be controlled to be suitable for the reaction.

Further, the carbon-based electrode 61, that is, the heat source is the double cylindrical body 5.
Since it is housed in the closed space 53 formed by 1, it does not come into contact with the reaction gas and can be used stably for a long period of time.

In addition, there is no deterioration or scattering into the reaction gas, so
From this point of view as well, high quality production is possible.

Furthermore, since the heat source is formed from the carbon-based electrode 61, there is no need for a cooling means such as a halogen lamp, which greatly contributes to the miniaturization of the apparatus. It can be mounted through the base body 21).

In other words, the metal-to-metal connection facilitates assembly and processing.
Reaction gas leakage from this part can be completely prevented.

Furthermore, since the rectifying member 71 forming the rectifying mechanism 70 is made of stainless steel and has a cylindrical shape, adhesion of components in the reaction gas on the upstream side of the susceptor 33 is suppressed, and highly efficient rectifying action can be achieved, resulting in extremely high quality. Compound semiconductors can be manufactured.

Further, since the rectifying member 71 can completely cover the wafer inlet/outlet holes 14 and 15 during the reaction operation, turbulence of the reaction gas due to the wafer outlet holes 14 and 15 is prevented.

Therefore, in view of the fragility of the wafer 31 and mass productivity, it can be efficiently operated not only during high speed rotation but also at low speed rotation.

Furthermore, since the rectifying member 71 is provided with a short guide member 72 designed to completely close the inlet/outlet 14.15 and quickly open/close, bypassing of the reactant gas flow can also be prevented.

Furthermore, since the rectifying member 71 is configured to be movable up and down from the outside via the movable body 73, loading and unloading operations can be performed quickly and with high efficiency.

Furthermore, since the rectifying member 71 can be removed to the outside together with the base 21, cleaning is easy, and the susceptor 3
The surface located on the upstream side of 3 can be kept smooth.

Furthermore, since a vertically movable filter 79 is provided between the reaction chamber 10 and the loading chamber 3, dust etc. do not enter from the reaction chamber 1001 during the loading operation, and the supplied wafer 31 is cleaned. can be kept.

In the above embodiments, a vertical device is used, but a horizontal device can be constructed in the same way.The wafer 31 is made of gallium arsenide, and the reaction gas is trimethyl gallium, etc., but the materials, types, and reaction formats may vary. It is clear that the present invention is not limited to this and can be selected and implemented as desired, and these cases also fall within the scope of the present invention.

[Effects of the Invention] As is clear from the above description, the present invention holds a susceptor via a tray that is removably attached to a susceptor, and utilizes the rotational force of the susceptor to connect the susceptor and the tray, that is, the wafer. Since it is configured with a lock IS that integrally connects the wafer and fixes the relative position, the conventional drawbacks of deformation and damage of the wafer can be eliminated, and high-speed susceptor rotation enables high-quality and high-efficiency manufacturing. This has the excellent effect of dramatically improving the ease and speed of loading and unloading operations.

[Brief explanation of drawings]

FIG. 1 is a side sectional view showing a first embodiment of the present invention, FIG. 2 is a plan view based on the arrow line 11-H in FIG. 1, and FIG. 3 is a side view showing the entire vertical device structure. 4 to 6 are schematic diagrams of conventional semiconductor manufacturing equipment using the MO-CVD method, in which FIG. 4 shows a horizontal type, FIG. 5 shows a vertical type, and FIG. 6 shows an improved vertical type. DESCRIPTION OF SYMBOLS 10... Reaction chamber, 11... Main body, 18... Internal space, 30... Wafer rotation top, 31... Wafer, 32... Tray, 32a... Inner peripheral surface, 32b . . . Dish portion, 33 .

Claims (1)

[Claims] (1) In a semiconductor manufacturing apparatus using an MO-CVD method in which a susceptor for holding a wafer is rotatably provided in a reaction chamber, the wafer is held by the susceptor via a tray formed to be removably attached to the susceptor, and The MO-CVD method is characterized in that a locking mechanism is provided that integrally connects the susceptor and the tray by using the rotational force of the susceptor during its rotational operation to fix the relative position of the susceptor and the wafer. Semiconductor manufacturing equipment.