JPH0311064U - - Google Patents
Info
- Publication number
- JPH0311064U JPH0311064U JP7224389U JP7224389U JPH0311064U JP H0311064 U JPH0311064 U JP H0311064U JP 7224389 U JP7224389 U JP 7224389U JP 7224389 U JP7224389 U JP 7224389U JP H0311064 U JPH0311064 U JP H0311064U
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- furnace
- silicon single
- single crystal
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は、本考案のシリコン単結晶成長装置の
一部断面側面図、第２図は、本考案のシリコン単
結晶成長装置を構成する熱処理炉の縦断面図、第
３図は、貯蔵タンクの縦断面図、第４図は、従来
のシリコン単結晶成長装置の一部断面側面図、で
ある。
１……成長炉、２……メインチヤンバー、３…
…プルチヤンバー、４……ゲートバルブ、５及び
１９……るつぼ、６及び２０……ヒータ、７……
ワイヤ、８……排気管、９……Ａｒガス供給管、
１１……熱処理装置、１２……熱処理炉、１３…
…原料ホツパ、１４……原料供給管、１５……貯
蔵タンク、１６……クランク軸、１７……ウエブ
、１８……プレート、２１……断熱材、２２……
Ａｒガス供給口、２３……排気口、２４……電極
用コネクタ、Ｍ……溶融シリコン、Ｃ……シリコ
ン単結晶、Ｇ……原料。
FIG. 1 is a partially cross-sectional side view of the silicon single crystal growth apparatus of the present invention, FIG. 2 is a vertical cross-sectional view of a heat treatment furnace that constitutes the silicon single crystal growth apparatus of the present invention, and FIG. 3 is a storage tank. FIG. 4 is a partially sectional side view of a conventional silicon single crystal growth apparatus. 1...Growth reactor, 2...Main chamber, 3...
...Pull chamber, 4... Gate valve, 5 and 19... Crucible, 6 and 20... Heater, 7...
Wire, 8...Exhaust pipe, 9...Ar gas supply pipe,
11... Heat treatment equipment, 12... Heat treatment furnace, 13...
... Raw material hopper, 14 ... Raw material supply pipe, 15 ... Storage tank, 16 ... Crankshaft, 17 ... Web, 18 ... Plate, 21 ... Insulation material, 22 ...
Ar gas supply port, 23... exhaust port, 24... electrode connector, M... molten silicon, C... silicon single crystal, G... raw material.
Claims (1)
装置は成長炉と熱処理装置からなり、成長炉はシ
リコン原料を溶融するメインチヤンバーとシリコ
ン単結晶を引き上げるプルチヤンバーを備え、熱
処理装置は原料を熱処理する炉とこの炉から前記
成長炉のメインチヤンバーに原料を供給する原料
供給管を備えていることを特徴とするシリコン単
結晶の成長装置。 (2) 実用新案登録請求の範囲第１項記載のシリ
コン単結晶引き上げ装置であつて、原料供給管の
途中に熱処理されたシリコン原料をいつたん貯め
る貯蔵タンクを設けたことを特徴とするシリコン
単結晶引き上げ装置。[Claims for Utility Model Registration] (1) A device for growing silicon single crystals, which consists of a growth furnace and a heat treatment device. A silicon single crystal growth apparatus, characterized in that the heat treatment apparatus is equipped with a furnace for heat treating a raw material and a raw material supply pipe for supplying the raw material from the furnace to the main chamber of the growth furnace. (2) A silicon single crystal pulling apparatus according to claim 1 of the utility model registration claim, characterized in that a storage tank for temporarily storing heat-treated silicon raw material is provided in the middle of the raw material supply pipe. Crystal pulling device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7224389U JPH0640592Y2 (en) | 1989-06-20 | 1989-06-20 | Silicon single crystal growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7224389U JPH0640592Y2 (en) | 1989-06-20 | 1989-06-20 | Silicon single crystal growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0311064U true JPH0311064U (en) | 1991-02-01 |
| JPH0640592Y2 JPH0640592Y2 (en) | 1994-10-26 |
Family
ID=31610011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7224389U Expired - Lifetime JPH0640592Y2 (en) | 1989-06-20 | 1989-06-20 | Silicon single crystal growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0640592Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110760931B (en) * | 2019-11-22 | 2024-03-19 | 中国电子科技集团公司第十三研究所 | A system for preparing indium phosphide crystals using an indium-phosphorus mixture |
-
1989
- 1989-06-20 JP JP7224389U patent/JPH0640592Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0640592Y2 (en) | 1994-10-26 |
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