JPH0311064U - - Google Patents

Info

Publication number
JPH0311064U
JPH0311064U JP7224389U JP7224389U JPH0311064U JP H0311064 U JPH0311064 U JP H0311064U JP 7224389 U JP7224389 U JP 7224389U JP 7224389 U JP7224389 U JP 7224389U JP H0311064 U JPH0311064 U JP H0311064U
Authority
JP
Japan
Prior art keywords
raw material
furnace
silicon single
single crystal
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7224389U
Other languages
English (en)
Other versions
JPH0640592Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7224389U priority Critical patent/JPH0640592Y2/ja
Publication of JPH0311064U publication Critical patent/JPH0311064U/ja
Application granted granted Critical
Publication of JPH0640592Y2 publication Critical patent/JPH0640592Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【図面の簡単な説明】
第１図は、本考案のシリコン単結晶成長装置の
一部断面側面図、第２図は、本考案のシリコン単
結晶成長装置を構成する熱処理炉の縦断面図、第
３図は、貯蔵タンクの縦断面図、第４図は、従来
のシリコン単結晶成長装置の一部断面側面図、で
ある。 １……成長炉、２……メインチヤンバー、３…
…プルチヤンバー、４……ゲートバルブ、５及び
１９……るつぼ、６及び２０……ヒータ、７……
ワイヤ、８……排気管、９……Ａｒガス供給管、
１１……熱処理装置、１２……熱処理炉、１３…
…原料ホツパ、１４……原料供給管、１５……貯
蔵タンク、１６……クランク軸、１７……ウエブ
、１８……プレート、２１……断熱材、２２……
Ａｒガス供給口、２３……排気口、２４……電極
用コネクタ、Ｍ……溶融シリコン、Ｃ……シリコ
ン単結晶、Ｇ……原料。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) シリコン単結晶の成長装置であつて、この
    装置は成長炉と熱処理装置からなり、成長炉はシ
    リコン原料を溶融するメインチヤンバーとシリコ
    ン単結晶を引き上げるプルチヤンバーを備え、熱
    処理装置は原料を熱処理する炉とこの炉から前記
    成長炉のメインチヤンバーに原料を供給する原料
    供給管を備えていることを特徴とするシリコン単
    結晶の成長装置。 (2) 実用新案登録請求の範囲第１項記載のシリ
    コン単結晶引き上げ装置であつて、原料供給管の
    途中に熱処理されたシリコン原料をいつたん貯め
    る貯蔵タンクを設けたことを特徴とするシリコン
    単結晶引き上げ装置。
JP7224389U 1989-06-20 1989-06-20 シリコン単結晶の成長装置 Expired - Lifetime JPH0640592Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7224389U JPH0640592Y2 (ja) 1989-06-20 1989-06-20 シリコン単結晶の成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7224389U JPH0640592Y2 (ja) 1989-06-20 1989-06-20 シリコン単結晶の成長装置

Publications (2)

Publication Number Publication Date
JPH0311064U true JPH0311064U (ja) 1991-02-01
JPH0640592Y2 JPH0640592Y2 (ja) 1994-10-26

Family

ID=31610011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7224389U Expired - Lifetime JPH0640592Y2 (ja) 1989-06-20 1989-06-20 シリコン単結晶の成長装置

Country Status (1)

Country Link
JP (1) JPH0640592Y2 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110760931B (zh) * 2019-11-22 2024-03-19 中国电子科技集团公司第十三研究所 一种利用铟磷混合物制备磷化铟晶体的系统

Also Published As

Publication number Publication date
JPH0640592Y2 (ja) 1994-10-26

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