JPH0311304A - Optical isolator - Google Patents

Optical isolator

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Publication number
JPH0311304A
JPH0311304A JP14704889A JP14704889A JPH0311304A JP H0311304 A JPH0311304 A JP H0311304A JP 14704889 A JP14704889 A JP 14704889A JP 14704889 A JP14704889 A JP 14704889A JP H0311304 A JPH0311304 A JP H0311304A
Authority
JP
Japan
Prior art keywords
substrate
mode
waveguide layer
upper layer
optical isolator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14704889A
Other languages
Japanese (ja)
Other versions
JP2841475B2 (en
Inventor
Kazuya Taki
和也 滝
Yasumitsu Miyazaki
宮崎 保光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brother Industries Ltd
Original Assignee
Brother Industries Ltd
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Filing date
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Priority to JP1147048A priority Critical patent/JP2841475B2/en
Publication of JPH0311304A publication Critical patent/JPH0311304A/en
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Publication of JP2841475B2 publication Critical patent/JP2841475B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To obtain an optical isolator which has a short element length and a small insertion loss and has a simple structure and is easily produced to have a high productivity by using materials having the magnetooptical effect for a substrate or an upper layer part also to approximate the refractive index of the substrate or the upper layer part to that of a waveguide layer and approximating the thickness of the waveguide layer film to that of a cut-off film. CONSTITUTION:A magnetic body having a first-order magnetooptic factor whose sign is opposite to that of the magnetic body which is used for a waveguide layer 14 and has a magnetooptical effect is used for a substrate 13 or the upper layer part, and the refractive index of the substrate 13 or the upper layer part is approximated to that of the waveguide layer 14, and the thickness of a phase matching film is approximated to that of the cut-off film. The direction of magnetization of magnetic bodies used for the waveguide layer 14 and the substrate 13 or the upper layer part is inclined from the film surface in a plane perpendicular to the light propagation direction. The mode conversion due to the first-order magnetooptic effect in the waveguide layer 14 and that in the substrate 13 are added to realize the optical isolator having a short element length and a small insertion loss, and this optical isolator has a simple structure and a high productivity.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、光通信或いは光ディスク等の光源として用い
られている半導体レーザに各種光学素子からの反射光が
戻るのを阻止し、半導体レーザの発振を安定化させるた
め等に用いられる一方向性導波路である先アイソレータ
に関するものである。
Detailed Description of the Invention [Industrial Application Field] The present invention prevents reflected light from various optical elements from returning to a semiconductor laser used as a light source for optical communication or optical disks, etc. This relates to an isolator, which is a unidirectional waveguide used to stabilize oscillation.

[従来技術] 従来、この種の光アイソレータを先導波路で構成したも
ので十分な特性をもつものは実現されていない。第6図
には従来の三領域型光アイソレータの構成例が示されて
おり、GGG (Gd3 GabO+2)等の基板61
上に液相成長(L P E)法等で作成されたY IG
 (Y3 F es O+ 2 )或いはBi置換Y 
IG (B i xY3−xF e5 o。
[Prior Art] Conventionally, an optical isolator of this type composed of a leading waveguide with sufficient characteristics has not been realized. FIG. 6 shows an example of the configuration of a conventional three-area optical isolator, in which a substrate 61 such as GGG (Gd3 GabO+2)
YIG created by liquid phase epitaxy (LPE) method etc.
(Y3 F es O+ 2 ) or Bi-substituted Y
IG (B i xY3-xF e5 o.

2、O< x < 3.以下Bi:YIGと表記する。2, O<x<3. Hereinafter, it will be written as Bi:YIG.

)等の磁性薄膜62及びA7等の金属クラッド63゜6
4から構成されている。金属クラッド63.64を用い
たモード選択器65.66では7Mモードを大きく減衰
させTEモードのみを通す。モード変換器67は、非相
反モード変換器68と相反モード変換器69から成り、
夫々磁化は光の伝搬方向と平行及び光の伝搬方向と垂直
で膜面に垂直方向からθだけ傾いている。非相反モード
変換器68と相反モード変換器69では、夫々ファラデ
ー効果及びコツトン・ムートン効果によりTE−TMモ
ード変換が50%ずつ生じ、順方向ではそれが打ち消し
合い、逆方向では加え合わさる。即ち、左端から入射し
た光は、モード選択器65でTEモード成分のみ伝送さ
れ、非相反モード変換器68において7Mモードに50
%変換されるが、相反モード変換器69において非相反
モード変換器68でのモード変換が打ち消されるため、
7MモードはTEモードへ変換され、再びTEモードの
みとなる。従って、モード選択器66を通過し右端から
出射される。逆に、右端から入射しだ光はモード選択器
66でTEモード成分のみになり、相反モード変換器6
つにおいて7Mモードに50%変換される。更に非を目
反モード変換器68でのモード変換が加え合わさり、残
りのTEモードも全て7Mモードに変換される。この7
Mモードは、モード選択器65で減衰するため左端から
は出射されない。
) etc. magnetic thin film 62 and A7 etc. metal cladding 63°6
It consists of 4. Mode selectors 65 and 66 using metal clads 63 and 64 greatly attenuate the 7M mode and pass only the TE mode. The mode converter 67 consists of a non-reciprocal mode converter 68 and a reciprocal mode converter 69,
The magnetizations are parallel to the light propagation direction, perpendicular to the light propagation direction, and tilted by θ from the direction perpendicular to the film surface. In the non-reciprocal mode converter 68 and the reciprocal mode converter 69, TE-TM mode conversion occurs by 50% each due to the Faraday effect and the Kotton-Mouton effect, which cancel each other in the forward direction and add together in the reverse direction. That is, for the light incident from the left end, only the TE mode component is transmitted by the mode selector 65, and the light is converted to the 7M mode by the non-reciprocal mode converter 68.
% conversion, but since the mode conversion in the non-reciprocal mode converter 68 is canceled in the reciprocal mode converter 69,
7M mode is converted to TE mode and becomes only TE mode again. Therefore, it passes through the mode selector 66 and is emitted from the right end. Conversely, the light incident from the right end becomes only the TE mode component at the mode selector 66, and the light enters the reciprocal mode converter 6.
50% conversion to 7M mode in one case. Furthermore, the mode conversion by the mesh mode converter 68 is added, and all remaining TE modes are also converted to the 7M mode. This 7
Since the M mode is attenuated by the mode selector 65, it is not emitted from the left end.

従来の光アイソレータの他の例としては、植木。Other examples of conventional optical isolators are plants.

宮崎、電子通信学会技術研究報告MW86−124 (
1986)及び、滝、宮崎、電子通信学会技術研究報告
MW86−126 (1986)に示されているような
単一領域型光アイソレータが知られている。
Miyazaki, Institute of Electronics and Communication Engineers Technical Research Report MW86-124 (
Single area type optical isolators are known as shown in Taki, Miyazaki, IEICE technical research report MW86-126 (1986).

[発明が解決しようとする課題] しかしながら、三領域型光アイソレータでは隣接した2
つの領域の磁化を夫々互いに異なった方向へ配向させね
ばならないが、実際には困難であり、非相反モード変換
器と相反モード変換器との境界付近で磁化の方向が複雑
に変化し、それに伴ない、モード変換の大きさも変化す
るため所望の特性が得られていない。また、従来の単一
領域型光アイソレータでは、素子長が長くなり、挿入損
失が増大するという欠点があった。
[Problem to be solved by the invention] However, in the three-area optical isolator, two adjacent
It is necessary to orient the magnetization of the two regions in different directions, but this is difficult in practice because the direction of magnetization changes in a complicated manner near the boundary between the nonreciprocal mode converter and the reciprocal mode converter. However, since the magnitude of mode conversion also changes, desired characteristics cannot be obtained. Furthermore, conventional single region type optical isolators have the disadvantage that the element length becomes long and insertion loss increases.

本発明は、上述した問題点を解決するためになされたも
のであり、導波層だけではなく、基板或いは上層部にも
磁気光学効果を有する材料を用いると共に、基板或いは
上層部の屈折率を導波層に近づけ、導波層膜厚をカット
オフ膜厚に近づけることにより素子長が短く挿入損失が
小さい、更に、構造が簡単であり、実際に作成が容易で
生産性の高い光アイソレータを提供することを目的とし
ている。
The present invention has been made to solve the above-mentioned problems, and uses a material having a magneto-optic effect not only for the waveguide layer but also for the substrate or upper layer, and also by changing the refractive index of the substrate or upper layer. By approaching the waveguide layer and making the waveguide layer thickness close to the cut-off thickness, we have created an optical isolator that has a short element length and low insertion loss, and has a simple structure that is actually easy to create and has high productivity. is intended to provide.

[課題を解決するための手段] この目的を達成するためのに本発明の光アイソレータで
は、基板或いは上層部に、導波層に用いられている磁気
光学効果を有する磁性体の1次の磁気光学因子とは反対
の符号の1次の磁気光学因子をもつ磁性体を用いると共
に、その屈折率を導波層の屈折率に近くし、位相整合膜
厚がカットオフ膜厚に近くなるようにしている。更に、
導波層及び基板或いは上層部に用いられる磁性体の磁化
が光の伝搬方向に垂直な面内で膜面から傾くようにして
いる。
[Means for Solving the Problems] In order to achieve this object, the optical isolator of the present invention has a primary magnetism of a magnetic material having a magneto-optic effect used in the waveguide layer on the substrate or upper layer. A magnetic material having a first-order magneto-optic factor with the opposite sign to the optical factor is used, and its refractive index is made close to that of the waveguide layer, so that the phase matching film thickness is made close to the cutoff film thickness. ing. Furthermore,
The magnetization of the magnetic material used in the waveguide layer and the substrate or upper layer is tilted from the film surface in a plane perpendicular to the light propagation direction.

[作用コ 上記の構成を有する本発明では、モード変換器において
基板或いは上層部にも導波層とは1次の磁気光学効果の
符号が反対の磁気光学効果を有する磁性体を用いている
ため、導波層及び基板或いは上層部で生じる電界の伝搬
方向成分の寄与する1次の磁気光学効果による非相反性
のモード変換が互いに加え合わさる。また、基板或いは
、上層部の屈折率を導波層の屈折率に近い値とし、位相
整合膜厚をカットオフ膜厚に近づけることにより電界の
伝搬方向成分が増加し、1次の磁気光学効果によるモー
ド変換も増加する。更に、磁性体の磁化を光の伝搬方向
に垂直な面内で膜面から傾けることにより、電界の伝搬
方向に垂直な成分のみの寄与する2次の磁気光学効果に
よる相反性のモード変換と1次の磁気光学効果によるモ
ード変換とを等しくする。これにより、順方向において
はこれらの2次及び1次の磁気光学効果によるモード変
換が打ち消し合い、TEモードはTEモードのまま伝送
され、モード選択器を通して出射される。逆方向におい
ては、これらのモード変換が加え合わさり、TEモード
は7Mモードへ完全に変換され、モード選択器により減
衰するため出射されない。これにより順方向のみに光を
伝送することができる。
[Operation] In the present invention having the above configuration, a magnetic material having a magneto-optic effect having a first-order magneto-optic effect with a sign opposite to that of the waveguide layer is used in the substrate or upper layer of the mode converter. , non-reciprocal mode conversion due to the first-order magneto-optic effect contributed by the propagation direction component of the electric field generated in the waveguide layer and the substrate or upper layer are added together. In addition, by setting the refractive index of the substrate or upper layer close to the refractive index of the waveguide layer and making the phase matching film thickness close to the cutoff film thickness, the propagation direction component of the electric field increases, and the first-order magneto-optic effect The number of mode conversions due to this will also increase. Furthermore, by tilting the magnetization of the magnetic material from the film surface in a plane perpendicular to the light propagation direction, reciprocal mode conversion and 1 The following mode conversion due to magneto-optic effect is made equal. As a result, in the forward direction, the mode conversions due to the second-order and first-order magneto-optic effects cancel each other out, and the TE mode is transmitted as it is and is emitted through the mode selector. In the reverse direction, these mode conversions add up, and the TE mode is completely converted to the 7M mode, which is attenuated by the mode selector and is therefore not emitted. This allows light to be transmitted only in the forward direction.

[実施例] 以下、本発明を具体化した一実施例を図面を参照して説
明する。第1図は、本発明の光アイソレータの構成を示
したものである。光アイソレータはモード変換器10と
その両端に設けられたモード選択器11.12とから成
る。モード変換器10は基板13.導波層14.上層部
15の3層から成り、基板13及び導波層14は、磁気
光学効果を有する磁性体であり、上層部15は、Sin
[Example] Hereinafter, an example embodying the present invention will be described with reference to the drawings. FIG. 1 shows the configuration of an optical isolator of the present invention. The optical isolator consists of a mode converter 10 and mode selectors 11, 12 provided at both ends thereof. The mode converter 10 includes a substrate 13. Waveguide layer 14. The upper layer part 15 is composed of three layers, the substrate 13 and the waveguide layer 14 are magnetic materials having a magneto-optic effect, and the upper layer part 15 is made of a sinusoidal material.
.

BK7ガラス、ZnO等の誘電体である。導波層14と
基板13の磁性体の1次の磁気光学効果の符号は反対で
ある。導波層14として1次の磁気光学効果が負のBi
:YIG、基板15として1次の磁気光学効果が正のG
a多量置換(BiGd)3  (FeGa)b O+ 
2を用いることができる。
It is a dielectric material such as BK7 glass or ZnO. The signs of the first-order magneto-optic effects of the magnetic materials of the waveguide layer 14 and the substrate 13 are opposite. Bi, which has a negative first-order magneto-optic effect, is used as the waveguide layer 14.
:YIG, G with positive first-order magneto-optic effect as substrate 15
a Massive substitution (BiGd)3 (FeGa)b O+
2 can be used.

モード選択器11.12は同じものであり、AA?等の
金属クラッド16.17により、7Mモードのみに大き
な減衰を与え、TEモードのみを通過させる働きをする
Mode selectors 11 and 12 are the same, AA? The metal cladding 16, 17, etc. gives a large attenuation only to the 7M mode and functions to pass only the TE mode.

導波層14と基板13に用いられる磁性ガーネットの非
誘電率テンソルを11.ε2とすると、ε1.ε2は、 (1) で与えられる。ここで、導波層14及び基板13の磁化
が光の伝搬方向(Z方向)に垂直な面内で膜面からθだ
け傾いている場合の各成分は、e、   m(n、+Δ
n−)”+2 (faaMりlXX       l 
     1.5intθ ε、   −n、”+2 (f14M”)−cosθ1
  y y    L               
   Lε ・    n ・ 2 IZZ       1 ε−=  (f4tM”)  、sin  2θ   
(2)txy                 tε
 ・   “J  (f+  M)  、cos  θ
IZX                lε、−j 
 (f? M)  −5in θ1yZ       
        l但し、n、及びΔn、は磁性ガーネ
ットの屈折1 率及び複屈折、f、M及びf、□M2は1次及び2次の
磁気光学効果を表わす。この中でモード変換に寄与する
のはε、  とε、  である。即五XYIyZ ち、ε、  によりTEモードのEy酸成分TMxy モードのE 成分との結合が生じモード変換が生× じる。このモード変換は、(2)式のように2次の磁気
光学効果による相反性のモード変換である。
The dielectric constant tensor of the magnetic garnet used for the waveguide layer 14 and the substrate 13 is expressed as 11. If ε2, then ε1. ε2 is given by (1). Here, when the magnetization of the waveguide layer 14 and the substrate 13 is tilted by θ from the film surface in a plane perpendicular to the light propagation direction (Z direction), each component is e, m(n, +Δ
n-)”+2 (faaMrilXXl
1.5intθ ε, -n,"+2 (f14M")-cosθ1
y y L
Lε ・n ・2 IZZ 1 ε−= (f4tM”), sin 2θ
(2) txy tε
・“J (f+M), cos θ
IZX lε, -j
(f? M) -5in θ1yZ
l However, n and Δn represent the refractive index and birefringence of the magnetic garnet, and f, M, f, and □M2 represent the first-order and second-order magneto-optic effects. Among these, ε, and ε, contribute to mode conversion. Therefore, due to ε, the Ey acid component of the TE mode is coupled with the E component of the TMxy mode, resulting in mode conversion. This mode conversion is reciprocal mode conversion due to the second-order magneto-optic effect as shown in equation (2).

一方、ε、  によりTEモードのE 成分とTtyz
                 7MモードのE 
成分との結合が生じる。このモード変換は、(2)式で
示されるように1次の磁気光学効果による非相反性のモ
ード変換である。このε、  及びε、  によるモー
ド変換の大きlX y      1)’Z さは次式の結合係数K   、K   で表される。
On the other hand, due to ε, the E component of the TE mode and Ttyz
E in 7M mode
A combination with the components occurs. This mode conversion is non-reciprocal mode conversion due to the first-order magneto-optic effect, as shown by equation (2). The magnitude of the mode conversion caused by this ε, and ε, is expressed by the coupling coefficients K and K in the following equations.

xy     yz K  −ε2   f’E   EXdx+xY   
   x)’   ″)o  2>’   2Xε+ 
  J’5x E+  E+ ’ dx  (3)xy
         Y     xK    =e2 
   fOE2   E2   dx+yz     
  yz  噌    yzE+   f7E+  E
+ 京dx    (4)yz         y 
    z第2図にモード変換器における電界分布を示
す。
xy yz K −ε2 f'E EXdx+xY
x)''')o2>' 2Xε+
J'5x E+ E+' dx (3)xy
Y x K = e2
fOE2 E2 dx+yz
yz 噌 yzE+ f7E+ E
+ Kyodx (4)yz y
Figure 2 shows the electric field distribution in the mode converter.

E の分布から積分子6E2 E2意dxと2    
          べ唖    yzfτEl 、E
l−dxの符号は互いに反対となる。
From the distribution of E, the product numerator 6E2 E2 dx and 2
Be yzfτEl ,E
The signs of l-dx are opposite to each other.

従ってK  が大きくなるためにはε2  とyz  
                     yzε、
  即ち、基板13と導波層14の1次の磁z 気光学効果の符号が反対である必要がある。これにより
、導波層14だけでなく、基板13の磁気光学効果も有
効に利用でき、結果的に素子長を短くすることができる
。また、基板13の屈折率を導波層の屈折率に近づけ、
位相整合膜厚をカットオフ膜厚に近づけることにより電
界の伝搬方向成分であるE が大きくなる。これにより
、位相整合膜厚がカットオフ膜厚よりも十分大きな従来
の2領域型光アイソレータにおいて無視されていたε、
  によるモード変換が大きくなる。更に、  y Z 図示されない外部磁石により磁化の仰角θを適当に選ぶ
ことによりK  とK  を等しくするこxy    
 yz とができる。したがって、順方向においては、ε、  
とε、  によるモード変換が打ち消しlx y   
 1  y Z 合いモード変換は生じず、逆方向においてはε、  と
ε   によるモード変換が加え合わLX5/   i
yz さり、完全なモード変換が生じる。即ち、順方向におい
ては左端からモード選択器11を通して入射したTEモ
ードはモード変換器10ではモード変換されずにTEモ
ードのままモード選択器12を通過し、出力される。こ
れに対し、逆方向においては、右端から入射した光は、
モード選択器12においてTEモードのみとなり、更に
モード変換器10で完全に7Mモードへ変換される。こ
の7Mモードは、モード選択器11で減衰するため出力
されない。このようにして、光を一方向のみに伝送する
先アイソレータを構成することができる。
Therefore, in order to increase K, ε2 and yz
yzε,
That is, the sign of the first-order magneto-optic effect of the substrate 13 and the waveguide layer 14 must be opposite. Thereby, not only the waveguide layer 14 but also the magneto-optic effect of the substrate 13 can be effectively utilized, and as a result, the element length can be shortened. Further, the refractive index of the substrate 13 is brought close to the refractive index of the waveguide layer,
By bringing the phase matching film thickness closer to the cutoff film thickness, E, which is a component in the propagation direction of the electric field, increases. As a result, ε, which was ignored in conventional two-region optical isolators where the phase matching film thickness is sufficiently larger than the cutoff film thickness,
mode conversion becomes large. Furthermore, it is possible to make K and K equal by appropriately selecting the elevation angle θ of magnetization using an external magnet (not shown).
yz can be done. Therefore, in the forward direction, ε,
The mode conversion due to and ε, cancels lx y
1 y Z matching mode conversion does not occur, and in the opposite direction, mode conversion due to ε, and ε are added LX5/i
yz, a complete mode conversion occurs. That is, in the forward direction, the TE mode that enters from the left end through the mode selector 11 is not converted into mode by the mode converter 10, passes through the mode selector 12 as the TE mode, and is output. On the other hand, in the opposite direction, the light incident from the right end is
The mode selector 12 selects only the TE mode, and the mode converter 10 converts it completely to the 7M mode. This 7M mode is attenuated by the mode selector 11 and is not output. In this way, a destination isolator that transmits light in only one direction can be constructed.

具体的な設計例として波長1.15mにおいて導波層1
4に屈折率n1−2.18゜ 複屈折率Δrll =2.5xlO−’、1次の磁気光
学効果(f? M)+ =−2,79X10−’、2次
の磁気光学効果(f44 M” ) 、s+w−5,5
8Xio−4,膜厚0.975mの(BiY)z(Fe
A−A’)so+□を、基板13にGGG (Gd3G
as O+ 2 )上にLPE、スパッタ法等で作成し
た屈折率n2=2.137.複屈折率Δn2−2゜5 
X 10−3.1次の磁気光学効果(f7M)2”3.
85X10−’、2次の磁気光学効果(ft□M2)2
−−7.70X10’、膜厚2.5m以上の(B 1G
d)3  (FeGa)s O+ 2クラッド層を、上
層部に屈折率n3−1.50のBK7ガラスを用いるこ
とにより、モード変換器10の素子長4.68mmで光
アイソレータを作成することができる。このときのアイ
ソレーション特性を第3図に示す。磁化の仰角θ−79
〜80″において30dB以上の順逆比が得られること
がわかる。
As a specific design example, at a wavelength of 1.15 m, the waveguide layer 1
4, refractive index n1-2.18° birefringence Δrll = 2.5xlO-', first order magneto-optic effect (f? M)+ = -2,79X10-', second-order magneto-optic effect (f44 ”), s+w-5,5
8Xio-4, (BiY)z(Fe
A-A')so+□, GGG (Gd3G
refractive index n2=2.137. Birefringence Δn2-2゜5
X 10-3.1st order magneto-optic effect (f7M) 2”3.
85X10-', second-order magneto-optic effect (ft□M2)2
--7.70X10', film thickness 2.5m or more (B 1G
d) By using BK7 glass with a refractive index of n3-1.50 as the upper layer of the 3 (FeGa)s O+ 2 cladding layer, an optical isolator can be created with an element length of the mode converter 10 of 4.68 mm. . The isolation characteristics at this time are shown in FIG. Elevation angle of magnetization θ-79
It can be seen that a forward/reverse ratio of 30 dB or more can be obtained at ~80''.

本発明は、上述した実施例に限定されるものではなく、
その趣旨を逸脱しない範囲において種々の変更を加える
ことができる。
The present invention is not limited to the embodiments described above,
Various changes can be made without departing from the spirit of the invention.

例えば、磁気光学を有する基板の代わりに、第4図のよ
うにGGG等の誘電体41上に十分厚い磁性ガーネット
のクラッド層42を用いてもよいクラッド層42が十分
厚ければ誘電体41の影響は無視でき、クラッド層42
を基板として扱うことができる。また、第5図のように
GGG等の等方性基板51上に磁気光学効果を有する導
波層52及び上層部53を作製してもよい。このとき、
上層部53の屈折率は基板51よりも大きく、また、上
層部53と導波層52との1次の磁気光学効果の符号を
互いに反対となるようにすればよい。
For example, instead of a magneto-optical substrate, a sufficiently thick cladding layer 42 of magnetic garnet may be used on a dielectric 41 such as GGG as shown in FIG. 4. If the cladding layer 42 is thick enough, the dielectric 41 The effect is negligible, and the cladding layer 42
can be treated as a substrate. Alternatively, as shown in FIG. 5, a waveguide layer 52 and an upper layer portion 53 having a magneto-optic effect may be formed on an isotropic substrate 51 such as GGG. At this time,
The refractive index of the upper layer portion 53 is greater than that of the substrate 51, and the signs of the first-order magneto-optic effects of the upper layer portion 53 and the waveguide layer 52 may be opposite to each other.

更に、基板、導波層、上層部の3層を全て磁気光学効果
を有する材料で構成してもよい。このとき、基板、上層
部の内で導波層に近い屈折率をもつ方の1次の磁気光学
因子の符号を導波層と逆にすればよい。
Furthermore, all three layers, ie, the substrate, the waveguide layer, and the upper layer, may be made of materials having a magneto-optic effect. At this time, the sign of the first-order magneto-optic factor of the substrate and the upper layer having a refractive index close to that of the waveguide layer may be reversed to that of the waveguide layer.

[発明の効果] 以上詳述したことから明らかなように、本発明によれば
、導波層だけでなく、基板或いは上層部にも磁気光学効
果を有する材料を用いており、その1次の磁気光学効果
の符号が導波層とは逆になっているため、導波層と基板
における1次の磁気光学効果によるモード変換が加え合
わさり、素子長が短く、挿入損失の小さな光アイソレー
タを実現することができる。更に、基板或いは上層部の
屈折率を導波層の屈折率に近づけ、導波層膜厚をカット
オフ膜厚に近づけることにより、モード変換器を単一の
磁化方向で実現できるため、構造が簡単で生産性の高い
光アイソレータを提供することができる。
[Effects of the Invention] As is clear from the detailed description above, according to the present invention, a material having a magneto-optic effect is used not only for the waveguide layer but also for the substrate or upper layer, and the primary Since the sign of the magneto-optic effect is opposite to that of the waveguide layer, mode conversion due to the first-order magneto-optic effect in the waveguide layer and substrate is combined, realizing an optical isolator with short element length and low insertion loss. can do. Furthermore, by bringing the refractive index of the substrate or upper layer closer to the refractive index of the waveguide layer and the thickness of the waveguide layer closer to the cutoff film thickness, a mode converter can be realized with a single magnetization direction, resulting in a structure with a simple structure. A simple and highly productive optical isolator can be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図から第5図までは本発明を具体化した実施例を示
すもので、第1図は、本実施例が適用された光アイソレ
ータの構成図、第2図は、光アイソレータのモード変換
器における電界分布を示す図、第3図は、本実施例にお
ける具体的なアイソレージラン特性を示す図、第4図、
第5図は本実施例の一変形例の構成を示す断面図、第6
図は、従来の光アイソレータの構成図である。 図中、10はモード変換器、11.12はモード選゛択
器、13は基板、14は導波層、15は上層部である。 第1図 11 0 2 仁1覗距層
1 to 5 show embodiments embodying the present invention. FIG. 1 is a configuration diagram of an optical isolator to which this embodiment is applied, and FIG. 2 is a mode conversion diagram of the optical isolator. FIG. 3 is a diagram showing the electric field distribution in the device, and FIG. 4 is a diagram showing specific isolation run characteristics in this example.
FIG. 5 is a sectional view showing the configuration of a modified example of this embodiment, and FIG.
The figure is a configuration diagram of a conventional optical isolator. In the figure, 10 is a mode converter, 11 and 12 are mode selectors, 13 is a substrate, 14 is a waveguide layer, and 15 is an upper layer. Fig. 1 11 0 2 Jin 1 peep distance layer

Claims (1)

【特許請求の範囲】 1、基板と導波層と上層部から成るモード変換器とその
両端に設けられたモード選択器と前記モード変換器に光
の伝搬方向と垂直かつ膜面から傾いた磁界を印加する手
段とより成ることを特徴とする光アイソレータ。 2、請求項1記載の光アイソレータにおいて前記モード
変換器が、その基板或いは上層部の少くとも一方及び導
波層が磁気光学効果を有する材料であり、導波層の1次
の磁気光学因子と、基板或いは上層部の一方の磁気光学
因子の符号が反対であることを特徴とする光アイソレー
タ。 3、請求項1記載の光アイソレータにおいて誘電体上に
作成した十分厚い磁気光学効果を有するクラッド層を前
記モード変換器の基板としたことを特徴とする光アイソ
レータ。 4、請求項1記載の光アイソレータにおいて前記モード
変換器の基板或いは、上層部の屈折率を導波層の屈折率
に近づけることにより、導波層膜厚をカットオフ膜厚に
近づけたことを特徴とする光アイソレータ。
[Claims] 1. A mode converter consisting of a substrate, a waveguide layer, and an upper layer, a mode selector provided at both ends of the mode converter, and a magnetic field perpendicular to the light propagation direction and tilted from the film surface in the mode converter. An optical isolator comprising: a means for applying . 2. In the optical isolator according to claim 1, at least one of the substrate or the upper layer of the mode converter and the waveguide layer are made of a material having a magneto-optic effect, and the first-order magneto-optic factor of the waveguide layer is , an optical isolator characterized in that the magneto-optic factors of one of the substrate and the upper layer have opposite signs. 3. The optical isolator according to claim 1, wherein the substrate of the mode converter is a cladding layer formed on a dielectric material and having a sufficiently thick magneto-optic effect. 4. In the optical isolator according to claim 1, by bringing the refractive index of the substrate or upper layer of the mode converter close to the refractive index of the waveguide layer, the thickness of the waveguide layer can be brought close to the cutoff thickness. Features of optical isolators.
JP1147048A 1989-06-09 1989-06-09 Optical isolator Expired - Lifetime JP2841475B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1147048A JP2841475B2 (en) 1989-06-09 1989-06-09 Optical isolator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1147048A JP2841475B2 (en) 1989-06-09 1989-06-09 Optical isolator

Publications (2)

Publication Number Publication Date
JPH0311304A true JPH0311304A (en) 1991-01-18
JP2841475B2 JP2841475B2 (en) 1998-12-24

Family

ID=15421324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1147048A Expired - Lifetime JP2841475B2 (en) 1989-06-09 1989-06-09 Optical isolator

Country Status (1)

Country Link
JP (1) JP2841475B2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4927236A (en) * 1972-06-30 1974-03-11
JPS5278458A (en) * 1975-12-24 1977-07-01 Canon Inc Light control device
JPS58221810A (en) * 1982-06-18 1983-12-23 Agency Of Ind Science & Technol Optical isolator and its production

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4927236A (en) * 1972-06-30 1974-03-11
JPS5278458A (en) * 1975-12-24 1977-07-01 Canon Inc Light control device
JPS58221810A (en) * 1982-06-18 1983-12-23 Agency Of Ind Science & Technol Optical isolator and its production

Also Published As

Publication number Publication date
JP2841475B2 (en) 1998-12-24

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