JPH03116027U - - Google Patents

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Publication number
JPH03116027U
JPH03116027U JP1990025833U JP2583390U JPH03116027U JP H03116027 U JPH03116027 U JP H03116027U JP 1990025833 U JP1990025833 U JP 1990025833U JP 2583390 U JP2583390 U JP 2583390U JP H03116027 U JPH03116027 U JP H03116027U
Authority
JP
Japan
Prior art keywords
heater
molecular beam
crucible
beam cell
insulating material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1990025833U
Other languages
English (en)
Japanese (ja)
Other versions
JPH079372Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990025833U priority Critical patent/JPH079372Y2/ja
Publication of JPH03116027U publication Critical patent/JPH03116027U/ja
Application granted granted Critical
Publication of JPH079372Y2 publication Critical patent/JPH079372Y2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1990025833U 1990-03-14 1990-03-14 高温用分子線セル Expired - Fee Related JPH079372Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990025833U JPH079372Y2 (ja) 1990-03-14 1990-03-14 高温用分子線セル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990025833U JPH079372Y2 (ja) 1990-03-14 1990-03-14 高温用分子線セル

Publications (2)

Publication Number Publication Date
JPH03116027U true JPH03116027U (da) 1991-12-02
JPH079372Y2 JPH079372Y2 (ja) 1995-03-06

Family

ID=31528753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990025833U Expired - Fee Related JPH079372Y2 (ja) 1990-03-14 1990-03-14 高温用分子線セル

Country Status (1)

Country Link
JP (1) JPH079372Y2 (da)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008110103A (ja) * 2006-10-31 2008-05-15 Sophia Co Ltd 遊技機
JP2008161638A (ja) * 2007-01-04 2008-07-17 Daiichi Shokai Co Ltd 遊技機
JP2008228962A (ja) * 2007-03-20 2008-10-02 Samii Kk 弾球遊技機用の遊技釘及びこの遊技釘を用いて構成された遊技盤
JP2021001087A (ja) * 2019-06-20 2021-01-07 アダマンド並木精密宝石株式会社 ヒーターサポート及びヒーター装置
CN118600557A (zh) * 2024-08-09 2024-09-06 苏州优晶半导体科技股份有限公司 降低发热体打火的碳化硅单晶生长装置和碳化硅单晶的生长方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5822228A (ja) * 1981-07-29 1983-02-09 Hitachi Ltd 自動給紙装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5822228A (ja) * 1981-07-29 1983-02-09 Hitachi Ltd 自動給紙装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008110103A (ja) * 2006-10-31 2008-05-15 Sophia Co Ltd 遊技機
JP2008161638A (ja) * 2007-01-04 2008-07-17 Daiichi Shokai Co Ltd 遊技機
JP2008228962A (ja) * 2007-03-20 2008-10-02 Samii Kk 弾球遊技機用の遊技釘及びこの遊技釘を用いて構成された遊技盤
JP2021001087A (ja) * 2019-06-20 2021-01-07 アダマンド並木精密宝石株式会社 ヒーターサポート及びヒーター装置
CN118600557A (zh) * 2024-08-09 2024-09-06 苏州优晶半导体科技股份有限公司 降低发热体打火的碳化硅单晶生长装置和碳化硅单晶的生长方法

Also Published As

Publication number Publication date
JPH079372Y2 (ja) 1995-03-06

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