JPH03120102U - - Google Patents

Description

[Brief explanation of drawings]

FIG. 1 is a plan view showing a microwave semiconductor switch circuit according to an embodiment of this invention, and FIG.
3 is a plan view showing a conventional microwave semiconductor switch circuit, and FIG. 4 is a structural circuit diagram of FIG. 3. In the figure, 1 is a semiconductor substrate, 2 is a signal input line, 3, 4 are signal output lines, 7, 8 are source electrodes of field effect transistors, 9, 10 are drain electrodes, 11, 12 are gate electrodes, 15, 16 is a control voltage application terminal, 17 is a common terminal for control voltage, 50
, 51 and 60, 61 are field effect transistors connected in series, 110, 111 and 120, 12
1 is a gate electrode, 130, 131, 140, 14
1 indicates resonant inductance. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Scope of utility model registration request] In a microwave frequency band signal switching switch using a field effect transistor as a switching element, the source or drain electrode of the first transistor and the source or drain electrode of the second transistor used in each signal switching output line portion are common. A microwave semiconductor switch circuit characterized in that the transistors are connected in series and the gate electrodes of each transistor are controlled simultaneously to intermittent signals.