JPH03122079A - Metallizing composition for ceramics - Google Patents

Metallizing composition for ceramics

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Publication number
JPH03122079A
JPH03122079A JP18429087A JP18429087A JPH03122079A JP H03122079 A JPH03122079 A JP H03122079A JP 18429087 A JP18429087 A JP 18429087A JP 18429087 A JP18429087 A JP 18429087A JP H03122079 A JPH03122079 A JP H03122079A
Authority
JP
Japan
Prior art keywords
ceramics
metallized layer
weight
metallized
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18429087A
Other languages
Japanese (ja)
Inventor
Kiyoyuki Esashi
清行 江刺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON HAIBURITSUDO TECHNOL KK
Original Assignee
NIPPON HAIBURITSUDO TECHNOL KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON HAIBURITSUDO TECHNOL KK filed Critical NIPPON HAIBURITSUDO TECHNOL KK
Priority to JP18429087A priority Critical patent/JPH03122079A/en
Publication of JPH03122079A publication Critical patent/JPH03122079A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To improve the stability by blending a specified wt.% of Nb, Cr, Zr, Ti, C, Si, an SiC compound, one or more selected from W, Ta, Re and Os and, as the remainder, Ni and irreversible impurities. CONSTITUTION:Fine particles with <=150 mesh of respective components for constituting the subject metallizing composition composed of 3.0-22.0 wt.% Nb, <=20.0 wt.% Cr, provided that (Nb+Cr) is 15.0-22.0 wt.%, 1.0-5.0 wt.% Zr, 1.0-3.0 wt.% Ti, 1.5-3.5 wt.% C, 1.5-3.5 wt.% Si, 0.5-18 wt.% SiC compound, <=22 wt.% one or two or more selected from W, Ta, Re and Os and, as the substantial remainder, Ni and irreversible impurities are mixed and blended and a vehicle such as an ethylcellulose-based one is added thereto as a binder, thus obtaining paste-form metallizing composition. By applying the resultant paste to the surface of a ceramics-formed material, drying, subsequently carrying out heat treatment at 1,200-1,300 deg.C in a nonoxidative atomosphere and welding a metallic layer, a metallized layer is formed.

Description

【発明の詳細な説明】 本発明は窒化物、酸化物などの各種のセラミックスの表
面をメタライズ(金属化)するための新規な組成物と、
それを用いたメタライズ方法及びそれらを適用したメタ
ライズ製品に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a novel composition for metallizing the surface of various ceramics such as nitrides and oxides;
The present invention relates to a metallization method using the same and a metallized product to which the method is applied.

従来より、数%以上のs io2成分を含むアルミナセ
ラミックスの場合にはMO,Mrlよびフリット成分を
混合した粉末のペーストを用い、湿水素中1800〜1
500℃の温度範囲で焼付けて、セラミックス表面をメ
タライズする方法としていわゆる。MO−Mn 法が実
施されて来た。しかしながら818N4 + ムlN、
サイアロン、部分安定化ジルコニアなどの一連の新しく
開発されて来た窒化物や酸化物の強度の優れたセラミッ
クス焼結体や、99.0%以上の純度を有する高純度ア
ルミナ焼結体やサファイヤ等を対象として、強固な結合
力を有するメタライズ技術は未だ確立されていなかった
。その為、これらのセラミックスと金属とをろう材によ
ってろう付接合する際の前段階の処理として、前記[0
−Mn  法の如く実用性のあるメタライズ方法の開発
が要求されて来た。
Conventionally, in the case of alumina ceramics containing several percent or more of sio2 components, a powder paste containing MO, Mrl and frit components has been used, and
This is a method of metallizing the surface of ceramics by baking at a temperature range of 500°C. The MO-Mn method has been implemented. However, 818N4 + MulN,
A series of newly developed nitride and oxide ceramic sintered bodies with excellent strength such as sialon and partially stabilized zirconia, high purity alumina sintered bodies with purity of 99.0% or more, sapphire, etc. For this purpose, metallization technology with strong bonding strength had not yet been established. Therefore, the above-mentioned [0
There has been a demand for the development of a practical metallization method such as the -Mn method.

本発明はこのような状況に鑑みてなされたものであり、
本発明のメタライズ組成物は、Nbを3.0〜22.0
重量%、Cr を20.0重量%以下とし、Nb とC
r との合計を15.0〜22.0重量%。
The present invention was made in view of this situation, and
The metallizing composition of the present invention has a Nb content of 3.0 to 22.0
wt%, Cr is 20.0 wt% or less, Nb and C
The total amount with r is 15.0 to 22.0% by weight.

Zrを1.0〜5.0重量%、T1をi、 o 〜a、
 o重量%、Cを1.5〜3.5重量%、 Siを1.
5〜3.5重量%、  SiC化合物を0.5〜13.
0重量%、W、Ta。
Zr: 1.0 to 5.0% by weight, T1: i, o to a,
o weight %, C 1.5 to 3.5 weight %, Si 1.
5 to 3.5% by weight, and 0.5 to 13% of SiC compound.
0% by weight, W, Ta.

ReあるいはO8の1種又は2種以上を22重量%以下
含み、残部実質的にNl 及び不可避的不純物からなる
ことを特徴とするメタライズ組成物である。
This is a metallizing composition characterized in that it contains 22% by weight or less of one or more of Re or O8, and the remainder substantially consists of Nl and inevitable impurities.

本発明の対象とするセラミックスとしては5isN4 
、  AeN、サイアロンr  A120BあるいはM
gOなどの窒化物や酸化物のセラミックスである。
The ceramics targeted by the present invention include 5isN4
, AeN, Sialon r A120B or M
These are nitride and oxide ceramics such as gO.

本発明組成物中のNbはNi  と共晶を形成して)融
点を下げる働きがある。又、両者の間の金属間化合物N
1aNb  は結晶方位によっては室温でも大きな塑性
を示すことが出来るので溶融あるいは半溶融させて形成
された金属化層に塑性を付与することが出来、セラミッ
クスと金属化層との間の熱膨張収縮の差によって、生じ
る残留応力を緩和して結合力を高めることが出来る。さ
らにNbはZr はどではないが活性な元素の1つであ
り、セラミックスと反応して珪化物、窒化物、酸化物な
どを作り易く金属化層とセラミックスとの結合力を強め
、又多量に配合することが出来るので溶融初期あるいは
半溶融の時期にセラミックスとの濡れ性を保ちペースト
の塗布面積よりも溶着面積が収縮してしまわないように
するうえで、極めて有効な元素である。
Nb in the composition of the present invention forms a eutectic with Ni to lower the melting point. Also, the intermetallic compound N between the two
Depending on the crystal orientation, 1aNb can exhibit large plasticity even at room temperature, so it can impart plasticity to a metallized layer formed by melting or semi-melting, and it can reduce thermal expansion and contraction between the ceramic and metallized layer. Due to the difference, the residual stress that occurs can be alleviated and the bonding strength can be increased. Furthermore, although Nb is not the same as Zr, it is one of the active elements, and it easily reacts with ceramics to form silicides, nitrides, oxides, etc., which strengthens the bond between the metallized layer and ceramics, and in large amounts. It is an extremely effective element in maintaining wettability with the ceramic during the initial or semi-molten stage of melting and preventing the welding area from shrinking more than the paste application area.

Cr はNi  と広い成分範囲で固溶体を作る元素で
あり、融点を下げる効果がある。又、Nb同様に活性な
元素であるので、セラミックスに対する濡れ性を改善し
、セラミックスと反応して珪化物。
Cr is an element that forms a solid solution with Ni over a wide range of components, and has the effect of lowering the melting point. Also, like Nb, it is an active element, so it improves the wettability of ceramics and reacts with them to form silicides.

窒化物、酸化物を作り易くセラミックスとの結合力を強
化する効果がある。しかし、Nb のようにメタライズ
、1の塑性を高める効果は無いので、あまり多量に含有
させるとセラミックスと反応して生成される上記のOr
の化合物やcr カーバイドが硬く脆いためにメタライ
ズ層にクラックを生じやすくなる。又Cr はメタライ
ズ層表直に高温800°C以上の空気中で緻密なcr 
に富んだ酸化皮膜を形成し、酸化を防止したり、あるい
は耐食性を向上させるうえで有効な元素である。そのた
め本発明においてはNb あるいはQr の何れか1種
あるいは2種を、セラミックスと反応し過ぎず、かつ融
点を適度に下げる範囲として、13.0〜22.0重量
%の範囲で配合する。ざらにNbは前記の理由により、
若干量でもメタライズ層のセラミックスとの熱膨張収縮
の差によって生じる残留応力や歪を吸収緩和して、cr
 のみを配合した場合にしばしば発生するメタライズ層
中のマイクロクラックの発生を防ぐ効果があるので、成
分範囲としてはNbを必ず配合させて、3.0〜22.
0%(以下重量%の重量を省略)werを20.0%以
下とし、Nb、:C!r との合計を15.0〜22.
0%の範囲とする。
It is easy to form nitrides and oxides and has the effect of strengthening the bonding force with ceramics. However, unlike Nb, it does not have the effect of increasing the plasticity of metallization, so if it is included in too large a quantity, the above-mentioned Or
Since compounds such as CR and CR carbide are hard and brittle, cracks are likely to occur in the metallized layer. In addition, Cr forms a dense Cr directly on the surface of the metallized layer in air at a high temperature of 800°C or higher.
It is an effective element in forming a rich oxide film, preventing oxidation, and improving corrosion resistance. Therefore, in the present invention, one or both of Nb and Qr is blended in an amount of 13.0 to 22.0% by weight so as not to react too much with the ceramic and to appropriately lower the melting point. For the reasons mentioned above, Zarani Nb is
Even a small amount absorbs and relaxes the residual stress and strain caused by the difference in thermal expansion and contraction between the metallized layer and the ceramic, making it
Since it has the effect of preventing the occurrence of microcracks in the metallized layer that often occur when only Nb is blended, Nb must be blended in the range of 3.0 to 22.
0% (hereinafter weight % is omitted) wer is 20.0% or less, Nb, :C! The total with r is 15.0 to 22.
The range is 0%.

Zr あるいは、Ti は非常に活性な元素であり、N
b−?)C!r以上にセラミックスとの反応性に富んで
いるため、セラミックス表面より内部o、oi〜0.0
5鴎程度まで拡散してセラミックスとメタライズ層との
界面に、これら元素の珪化物、窒化物。
Zr or Ti is a very active element, and N
b-? )C! Because it is more reactive with ceramics than r, internal o, oi ~ 0.0 from the ceramic surface
Silicides and nitrides of these elements are diffused to the extent of 50% at the interface between the ceramic and the metallized layer.

酸化物を形成することが出来るのでセラミックスとメタ
ライズ層との間の結合力を著しく向上させることが出来
る。しかしながらあまり多量に含有させると硬質で脆い
金属間化合物を形成したり、メタライズ組成物の溶融温
度を上げてしまい、流動性を低下させて、メタライズ層
に微細な空隙を形成させたりして、かえって悪影響を及
ぼす。
Since an oxide can be formed, the bonding strength between the ceramic and the metallized layer can be significantly improved. However, if it is contained in too large a quantity, it may form hard and brittle intermetallic compounds, raise the melting temperature of the metallized composition, reduce fluidity, and form fine voids in the metallized layer. Adversely affect.

又、これらZr、  Tiの2元素の中ではZr が少
量で、より効果的にNi  の融点を低下させることが
出来るし、Ti  はZr に比較して活性がやや低い
元素であるが、Ti  をZr の約半分程度配分させ
るとメタライズ組成物の融点を一段と下げるので窒化珪
素あるいはアルミナ等のセラミックス成分の高温におけ
る分解を抑制できるので好ましく、また1本発明を実施
してメタライズ層をセラミックスの表面に溶着させる際
の高温の雰囲気中には残存02 が大体において多少存
在するのでZr やTl  はこの02  と結合し易
く、0.5%程度ではメタライズ層の特性が不安定とな
り易く、又、6%程度を越えると残存o2  と結合し
て生成する酸化物がメタライズ層中の溶融成分の流動性
、濡れ性を損うこととなり緻密なメタライズ層の形成を
妨げるので好ましくない。以上の理由によりZr につ
いては1.0〜5.0%の範囲T1  については1.
0〜3.0%の範囲のTi に配合することが好ましい
Also, among these two elements, Zr and Ti, Zr can lower the melting point of Ni more effectively in small amounts, and Ti is an element with slightly lower activity than Zr, but Ti Approximately half of Zr is preferably distributed because it further lowers the melting point of the metallized composition and suppresses the decomposition of ceramic components such as silicon nitride or alumina at high temperatures. Since there is usually some residual 02 in the high temperature atmosphere during welding, Zr and Tl are likely to combine with this 02, and at around 0.5% the properties of the metallized layer tend to become unstable; Exceeding this level is not preferable because the oxides produced by combining with the residual O2 impair the fluidity and wettability of the molten components in the metallized layer, thereby preventing the formation of a dense metallized layer. For the above reasons, the range T1 of 1.0 to 5.0% for Zr is 1.
It is preferable to incorporate Ti in a range of 0 to 3.0%.

Cは81  と共にメタライズ組成物の溶融温度を低下
させる元素である。但し、Cだけでは溶着温度を120
0°C程度まで低下させることは出来ずBi  と共存
させる必要がある。例えば8iaN4などは窒素や不活
性のAr気流中などでなければ1250°C程度の温度
からSi  とNとに分解し始め、また高純度Al2O
3についても1200°C以上では酸化雰囲気でなけれ
ば表面が一部還元され始めるのでメタライズするために
これ以上の高温で処理することは好ましくない。又、S
i  はメタライズ組成物の溶融状態での流動性を上げ
るのに非常に有効な元素であるが、あまり多量に含有さ
せるとメタライズ層中に硬くて脆い珪化物を多量に形成
させてしまい機械的性質を劣化させたり、クラックを生
じるのでBi  のみを大量に加えて溶融温度を下げる
ことは出来ない。以上の理由により本発明においては、
Cを1.5〜3.5%、81  を1.5〜3.5%の
範囲内で共存するように配合する。
C, together with 81, is an element that lowers the melting temperature of the metallizing composition. However, with only C, the welding temperature is 120
It cannot be lowered to about 0°C and it is necessary to coexist with Bi. For example, 8iaN4 starts to decompose into Si and N at a temperature of about 1250°C unless it is placed in a nitrogen or inert Ar gas flow, and high-purity Al2O
Regarding No. 3 as well, if the temperature is not higher than 1200°C, the surface starts to be partially reduced unless there is an oxidizing atmosphere, so it is not preferable to perform the treatment at higher temperatures for metallization. Also, S
i is a very effective element for increasing the fluidity of the metallized composition in the molten state, but if it is contained in too large a quantity, it will form a large amount of hard and brittle silicides in the metallized layer, which will deteriorate the mechanical properties. It is not possible to lower the melting temperature by adding a large amount of Bi alone because this would deteriorate the alloy and cause cracks. For the above reasons, in the present invention,
C and 81 are blended together in a range of 1.5 to 3.5% and 1.5 to 3.5%, respectively.

さらに本発明においては、SiC化合物を13.0%以
下の任意の範囲で配合することができるが、SiC化合
物は本発明のメタライズ組成物と濡れ性が良く、一部は
反応して溶融してしまいCとSiの安定な供給源となり
得るので、メタライズ処理の際、温度の変動、ばらつき
によってCやSi が不足して溶融しにくい場合とか、
あるいは雰囲気中の残存02 によりCがCO2ガスと
なって損耗して不足する場合にはこのSiC化合物より
Si  とCとがその処理温度で平衡する量まで溶出す
ることが出来、安定な製品を得ることが出来る。又、S
iCは本来熱膨張係数が小さ((5,5X10″/”C
)メタライズ層中に残存分布するSiCはメタライズ層
の熱膨張係数を低下させて5iaN4(B、 2 X 
10″/C)、サイアロン(8,2X10  /’C)
Furthermore, in the present invention, the SiC compound can be blended in an arbitrary range of 13.0% or less, but the SiC compound has good wettability with the metallizing composition of the present invention, and a part of the SiC compound reacts and melts. It can be a stable source of C and Si, so it can be used in cases where C or Si is insufficient and difficult to melt due to temperature fluctuations or variations during metallization processing.
Alternatively, if C becomes CO2 gas and is depleted due to residual 02 in the atmosphere, and there is a shortage, Si and C can be eluted from this SiC compound to an amount that balances at the processing temperature, resulting in a stable product. I can do it. Also, S
iC originally has a small coefficient of thermal expansion ((5,5X10"/"C
) The remaining SiC in the metallized layer lowers the thermal expansion coefficient of the metallized layer, resulting in 5iaN4(B, 2X
10''/C), Sialon (8,2X10/'C)
.

A120g(6,5X 10″10)の熱膨張係数の値
に近づけ、残留応力や歪を減じることが出来るので有効
である。18%を越えて配合するとメタライズ層中に残
存するSiC化合物や他金属元素との81、  Cの硬
くて脆い化合物の量が多くなり過ぎメタライズ層の柔軟
性を損い劣化させるので18%以下とする。又SiC化
合物としては単なる粉末粒子よりも、転位を含まない直
径0.01μm程度以下の機械的な性質の極めて優れた
引張強さ800kg/ws2もの値を有するSiCウィ
スカーを好適SiC成分化合物として用いることも出来
る。上記のSi やCの安定供給源としての役割のため
にも0.5%以上とし、18%以下を成分範囲とする。
It is effective because it approaches the value of the thermal expansion coefficient of A120g (6.5X 10"10) and can reduce residual stress and strain. If it is added in excess of 18%, SiC compounds and other metals remaining in the metallized layer will be removed. The amount of the hard and brittle compound of element 81 and C is too large, impairing the flexibility of the metallized layer and deteriorating it, so it should be 18% or less.Also, as a SiC compound, the diameter without dislocations is better than just powder particles. SiC whiskers, which have extremely excellent mechanical properties of about 0.01 μm or less and a tensile strength as high as 800 kg/ws2, can also be used as a suitable SiC component compound. For this reason, the content should be 0.5% or more, and the component range should be 18% or less.

本発明組成物のW、Ta、  几e、QSは何れも極め
て融点の高い元素であり、本発明組成物の他の成分元素
が1200〜1800℃程度で溶解しても溶融し切って
しまうことはないので充填材料成分として用いることが
出来る。これらの元素は又いずれも熱膨張係数が4.5
〜6.6X10″/”Cの範囲の小さな値を有する金属
であり、充填材料成分として単独あるいは共存させて2
2.0%以下の範囲内で配合し、メタライズ層の熱膨張
係数を調整したり、あるいは耐熱性を上げたりすること
が出来る。但し、あまりに多量に含有させるとメタライ
ズ層の柔軟性を損うので上記範囲を越えて配合すること
はかえって不利となる。
W, Ta, 几e, and QS in the composition of the present invention are all elements with extremely high melting points, and even if the other component elements of the composition of the present invention melt at about 1200 to 1800 °C, they will completely melt. It can be used as a filling material component. All of these elements also have a coefficient of thermal expansion of 4.5.
A metal with a small value in the range of ~6.6X10''/''C, alone or in combination as a filler material component.
By blending within a range of 2.0% or less, the thermal expansion coefficient of the metallized layer can be adjusted or the heat resistance can be increased. However, if it is contained in an excessively large amount, the flexibility of the metallized layer will be impaired, so it is rather disadvantageous to mix it in an amount exceeding the above range.

本発明のメタライズ組成物を各種のセラミックスに溶着
させる場合には、前記の如き組成の150メツシユ以下
、好ましくは325メツシユ以下、さらに微細なパター
ンをメタライズにより形成させるには、500メツシユ
以下の合金粉末あるいは一部か全部を混合してなる粉末
に適度な流動性とセラミックス表面への付着力とを付与
するために、粘結剤としてエチルセルロース系、アクリ
ル系などのビークルを混合してペースト状とし、スクリ
ーン印刷、刷毛、へらなどによる塗布技法を用いて、セ
ラミックスの所定の面、に塗布し、乾燥後、ムr+  
N2+ H2+ 真空などの非酸化性雰囲気中で120
0〜1300℃の温度範囲で5〜25分間保持して溶融
あるいは半溶融状態にして、メタライズ層を溶着させる
When the metallizing composition of the present invention is to be welded to various ceramics, the alloy powder of the composition as described above is 150 meshes or less, preferably 325 meshes or less, and in order to form an even finer pattern by metallization, the alloy powder is 500 meshes or less. Alternatively, in order to impart appropriate fluidity and adhesion to the ceramic surface to the powder obtained by mixing some or all of them, a vehicle such as ethyl cellulose or acrylic is mixed as a binder to form a paste. It is applied to the specified surface of the ceramic using a coating technique such as screen printing, a brush, or a spatula, and after drying, it is coated with unevenness.
N2+ H2+ 120 in a non-oxidizing atmosphere such as vacuum
The metallized layer is melted or semi-molten by holding it in a temperature range of 0 to 1300° C. for 5 to 25 minutes to weld the metallized layer.

前記の本発明組成物を用いて、本発明の方法によって表
面を金属化させたSi3N4+ サイアロン。
Si3N4+ sialon whose surface was metallized by the method of the present invention using the composition of the present invention described above.

hllN 、部分安定化ジルコニア、高純度i 209
  などのセラミックス焼結体は、さらにそのうえにH
4,co、  ムg、ムuPt、  Pd、  Rn、
  lu などの耐酸化性のある金属を溶融、無電解、
電解などのメツキ法、蒸着、スパッターなどの物理的コ
ーティング法などによって0.001〜o、otom程
度被覆することにより、銀ろう、金ろう、ニッケルろう
、パラジウムろう、銅ろうなどを用いてろう付する際に
ろう付炉の雰囲気中の残存o2  により活性な元素が
酸化されて、メタライズ層の表置に酸化物を形成し、上
記ろう材の流れ性を悪化させるのを防ぐことが出来る。
hllN, partially stabilized zirconia, high purity i 209
Ceramic sintered bodies such as
4,co, Mug, MuPt, Pd, Rn,
Melting oxidation-resistant metals such as lu, electroless,
Brazing with silver solder, gold solder, nickel solder, palladium solder, copper solder, etc. is achieved by coating with a coating of about 0.001 to 0.00 otom by plating methods such as electrolysis, physical coating methods such as vapor deposition, and sputtering. During this process, it is possible to prevent active elements from being oxidized by O2 remaining in the atmosphere of the brazing furnace, forming oxides on the surface of the metallized layer, and deteriorating the flowability of the brazing material.

このような本発明のメタライズ面を有するセラミックス
製品は各種の実用金属や合金、例えば、銅、コバール、
タングステン、モリブデン、銀、アルミニウム及びこれ
らの金属の合金や、さらに、硬質の熱膨張係数の大きな
金属や合金には、上記の金属や合金を中間緩衝材料とし
てセラミックスとの間に挾んでろう付することも出来る
ので、インコネル、耐熱鋼、ハステロイ、炭素鋼などと
ろう付することも可能である。
The ceramic products having the metallized surface of the present invention can be made of various practical metals and alloys, such as copper, Kovar,
For tungsten, molybdenum, silver, aluminum, and alloys of these metals, as well as hard metals and alloys with large thermal expansion coefficients, the above metals and alloys are used as an intermediate buffer material and are interposed between the ceramics and brazed. Therefore, it is also possible to braze Inconel, heat-resistant steel, Hastelloy, carbon steel, etc.

本発明によって、従来製造の困難であった結合力が強く
、しかも1200〜1800℃の適度な温度域で処理し
て出来るメタライズ面を有するSi3N4.サイアロン
、 klN、高純度AA’20g 、 MgOなどのセ
ラミックス焼結体のメタライズ製品を製造出来るように
なった。したがって、特性的あるいは経済的な観点から
も最も合理的な設計が可能となり上記セラミックスの各
種の用途、例えば、自動車エンジン部品、耐摩耗部品、
放熱板、電子回路基板、高温治具、刃物、工具、真空遮
断器などのいろいろな用途に本発明を適用して効果を上
げることが出来る。
According to the present invention, Si3N4 has a strong bonding force, which has been difficult to manufacture in the past, and has a metallized surface that can be processed at a moderate temperature range of 1200 to 1800°C. We are now able to manufacture metallized ceramic sintered products such as Sialon, klN, high purity AA'20g, and MgO. Therefore, the most rational design from a characteristic or economic point of view is possible, and the above ceramics can be used for various purposes such as automobile engine parts, wear-resistant parts,
The present invention can be effectively applied to various uses such as heat sinks, electronic circuit boards, high-temperature jigs, cutlery, tools, and vacuum circuit breakers.

次に本発明の詳細な説明する。Next, the present invention will be explained in detail.

実施例 第1表に記載の如き各種の本発明のメタライズ組成物を
82.5メツシユ以下の各成分の微粉末及び8iC化合
物とを混合して配合し、エチルセルロース系のビークル
を混入してペースト状とした。
Examples Various metallizing compositions of the present invention as shown in Table 1 are mixed and blended with fine powders of each component of 82.5 mesh or less and an 8iC compound, and an ethyl cellulose vehicle is mixed in to form a paste. And so.

次に直径12簡、高さ5+++sの常圧焼結のs i 
2N。
Next, a pressureless sintered s i with a diameter of 12 and a height of 5+++s
2N.

板の表面にこれを薄く均質に塗布し、乾燥後0.04〜
0.05118の厚さとした。さらに1200〜128
0°Cで10分間保持して金属層を溶着させ、厚さ0.
02〜o、 o a ssのメタライズ層を形成させた
Apply this thinly and homogeneously on the surface of the board, and after drying, it will be 0.04 ~
The thickness was set to 0.05118. Further 1200-128
Hold at 0°C for 10 minutes to weld the metal layer to a thickness of 0.
A metallized layer of 02-o, o ass was formed.

その後、さらにNi メツキを厚さ0.005鰭程度施
し、コバール合金の直径3.8w長さ10m1II11
程度の個片の端面を共晶銀ろうにて850°Cで水素気
流中で数分間保持してろう付し、炉中冷却後剪断試験を
実施して、同表記載の如き値を得た。
After that, Ni plating was applied to the fin to a thickness of about 0.005, and the diameter of the Kovar alloy was 3.8w and the length was 10m1II11.
The end faces of the individual pieces were brazed with eutectic silver solder at 850°C for several minutes in a hydrogen stream, and after cooling in the furnace, a shear test was performed and the values listed in the table were obtained. .

25〜500°C程度の温度範囲における窒化珪素とコ
バール合金の熱膨張係数は3.2 X 10  /’C
The thermal expansion coefficient of silicon nitride and Kovar alloy in the temperature range of about 25 to 500°C is 3.2 x 10 /'C
.

6.0X10″んであって、倍近く異り、ろう付に際し
ての残留歪が発生していることを考慮に入れても強い値
を示しており、さらに中間緩衝材料などを介在させてろ
う付を施せばろう付歪を減少させて、−段と接合強度を
向上させることが出来るので、実際の産業用セラミック
ス−金属接合部品として大型送風機の羽根の耐摩耗タイ
ルろう付パネルや自動車エンジン部品として工業的規模
で使用することが出来る。
6.0 x 10'', which is nearly double the difference, and shows a strong value even when taking into consideration the residual strain that occurs during brazing. If applied, it can reduce brazing distortion and improve the bonding strength, so it can be used as an industrial ceramic-metal bonded part, such as wear-resistant tile brazed panels for large blower blades, and as automobile engine parts. It can be used on a large scale.

第  1 表Part 1 table

Claims (1)

【特許請求の範囲】[Claims] Nbを3.0〜22.0重量%、Crを20.0重量%
以下とし、NbとCrとの合計を15.0〜22.0重
量%、Zrを1.0〜5.0重量%、Tiを1.0〜3
.0重量%、Cを1.5〜3.5重量%、Siを1.5
〜3.5重量%、SiC化合物を0.5〜18重量%、
W、Ta、ReあるいはOsの1種又は2種以上を22
重量%以下含み残部実質的にNi及び不可避的不純物か
らなることを特徴とするセラミックスのメタライズ組成
物。
3.0 to 22.0 wt% Nb, 20.0 wt% Cr
The total amount of Nb and Cr is 15.0 to 22.0% by weight, Zr is 1.0 to 5.0% by weight, and Ti is 1.0 to 3% by weight.
.. 0% by weight, C 1.5-3.5% by weight, Si 1.5% by weight
~3.5% by weight, 0.5-18% by weight of SiC compound,
One or more of W, Ta, Re or Os at 22
1. A metallized ceramic composition characterized in that it contains not more than % by weight and the remainder substantially consists of Ni and unavoidable impurities.
JP18429087A 1987-07-23 1987-07-23 Metallizing composition for ceramics Pending JPH03122079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18429087A JPH03122079A (en) 1987-07-23 1987-07-23 Metallizing composition for ceramics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18429087A JPH03122079A (en) 1987-07-23 1987-07-23 Metallizing composition for ceramics

Publications (1)

Publication Number Publication Date
JPH03122079A true JPH03122079A (en) 1991-05-24

Family

ID=16150741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18429087A Pending JPH03122079A (en) 1987-07-23 1987-07-23 Metallizing composition for ceramics

Country Status (1)

Country Link
JP (1) JPH03122079A (en)

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